The application discloses a preparation method of a
silicon carbide membrane based on wettability difference induced hollow interface construction. The method introduces a carbon
powder pore former with wettability difference from
silicon carbide particles into a green support body, realizes
slurry preferential spreading in the hydrophilic region and local retention in the hydrophobic region during the dip-
coating process, and then induces the formation of an ordered hollow channel structure at the membrane-support interface. During the co-
sintering process, the structure can effectively inhibit the penetration of the membrane
slurry into the large pores of the support body, enhance the integrity of the
membrane layer, and significantly reduce the interface
mass transfer resistance. The obtained
membrane layer has adjustable pore size and highly continuous
surface structure, significantly improving the
gas flux and dust
filtration performance compared with traditional membranes, while shortening the preparation period and reducing the
sintering energy consumption. The method is suitable for the construction of various asymmetric membrane structures, has good
scalability and process compatibility, and provides a new way for the large-scale preparation of low-cost and high-performance
silicon carbide membranes.