This invention discloses a method and apparatus for preparing nanoscale AG glass using a magnetron
sputtering composite
mask layer, relating to the field of
glass manufacturing technology. The specific steps are as follows: pretreating the glass substrate; using a
silicon target, depositing a SiO2 / Si3N4
composite film on the glass surface under mid-frequency magnetron
sputtering conditions by adjusting the
flow ratio of
oxygen and
nitrogen; optimizing the composition, thickness, and structure of the composite
mask layer; achieving rapid selective
etching of the SiO2 layer using an
etching solution; forming a nanoscale uneven structure through
etching under the protection of the
mask layer; removing the residual
mask layer; and post-
processing the glass substrate to obtain the finished product. This invention, through
sputtering parameter optimization, introduces carbon and
oxygen elements into the Si3N4 layer, improving the density and
crystallinity of the Si3N4 layer, reducing its
etching rate, ensuring complete removal of the SiO2 layer, avoiding excessive etching of the Si3N4 layer, and ensuring controllable formation of the subsequent nanostructures.