Fabrication method of thick gas electron multiplier detector diaphragm

A technology of gas electron multiplication and production method, which is applied in the direction of removing conductive materials by chemical/electrolytic methods, which can solve the problems affecting the working performance of the detector and increasing the difficulty of making THGEM membranes, and achieve uniformity.

Active Publication Date: 2016-07-20
UNIVERSITY OF CHINESE ACADEMY OF SCIENCES +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the most difficult to control is the lamination process. Since the lamination needs to be aligned with the center of each hole, otherwise the performance of the detector will be affected due to the poor quality of a single hole. Therefore, the existing process is used for THGEM membrane plate The production of the film has high requirements on the drilling accuracy, laminating positioning accuracy, and laminating working environment, which increases the difficulty of making large-area THGEM diaphragms.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fabrication method of thick gas electron multiplier detector diaphragm
  • Fabrication method of thick gas electron multiplier detector diaphragm
  • Fabrication method of thick gas electron multiplier detector diaphragm

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] 1. Cut the double-sided copper-clad PCB board into a production board with a processing size of 300mm×300mm, scrub and clean it with a board brushing machine, and use a cleaning agent to remove grease, etc., and wait for use.

[0033] 2. Drill positioning holes on the double-sided copper clad board for the installation and fixing of THGEM membrane board.

[0034] 3. Simultaneously press the photoresist dry film on both sides of the double-sided copper clad board.

[0035] 4. Align the outer graphics film with the circuit board with the photoresist dry film pressed, put it on the exposure machine for exposure, and bake at 100°C for 3 minutes.

[0036] 5. Use NaCO with a concentration of 1% (w / v) 3 The solution was developed at a spray speed of 0.8m / min.

[0037] 6. Etch copper with etching solution, the composition of etching solution is:

[0038]

[0039] 7. Remove the photoresist dry film with film removing solution. At this time, the upper layer copper foil, th...

Embodiment 2

[0046] 1. Cut the double-sided copper-clad PCB board into a production board with a processing size of 300mm×300mm, scrub and clean it with a board brushing machine, and use a cleaning agent to remove grease, etc., and wait for use.

[0047] 2. Drill positioning holes on the double-sided copper clad board for the installation and fixing of THGEM membrane board.

[0048] 3. Simultaneously press the photoresist dry film on both sides of the double-sided copper clad board.

[0049] 4. Align the outer graphics film with the circuit board with the photoresist dry film pressed, put it on the exposure machine for exposure, and bake at 100°C for 3 minutes.

[0050] 5. Use NaCO with a concentration of 1% (w / v) 3 The solution was developed at a spray speed of 0.8m / min.

[0051] 6. Etch copper with etching solution, the composition of etching solution is:

[0052]

[0053] 7. Remove the photoresist dry film with film removing solution. At this time, the upper layer copper foil, th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for manufacturing a thick gas electron multiplication detector membrane plate, which is characterized in that it comprises the following steps: cutting and cleaning double-sided copper-clad plates; drilling positioning holes; pressing photoresist dry films on both sides simultaneously; The outer graphic film and the circuit board with the photoresist dry film pressed are aligned and placed on the exposure machine for exposure; develop, etch to remove copper, and remove the photoresist dry film; CNC machine tools punch out holes on the double-sided copper clad board Array; spray double-sided copper-clad board. The advantage of the present invention is that: it adopts the whole board micro-etching process to manufacture THGEM diaphragms in a large area, and has successfully produced THGEM diaphragms of 300mm×300mm, and the uniformity of the rim is consistent; the use of fully automatic circuit board manufacturing equipment , can be mass-produced, and the yield rate is above 95%; THGEM membrane plate and readout anode plate are independent of each other, and can be designed and processed into different sizes and shapes according to needs.

Description

technical field [0001] The invention relates to a method for manufacturing a diaphragm, in particular to a method for manufacturing a thick gas electron multiplication detector diaphragm, which belongs to the field of etching processing. Background technique [0002] Thick gas electron multiplier detector (THGEM) is a new type of microstructured gas detector, its structure is as follows: figure 1 As shown, in the airtight chamber 11 (the airtight chamber 11 is filled with working gas, which can be mixed with inert gases such as argon and xenon and quenching gases such as carbon dioxide, isobutane and methane), the drift electrode 1 , the readout anode 9 and the preamplifier 10 are arranged parallel to each other, and a THGEM diaphragm is also arranged in parallel between the drift electrode 1 and the readout anode 9. The THGEM diaphragm is composed of an upper copper layer 3, an insulating substrate 4 and a lower copper layer. 5, the THGEM film plate is provided with an arr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H05K3/06
Inventor 郑阳恒刘宏邦刘倩谢一冈陈石周晓康董洋张强李雪冰张炜汪晶常洁
Owner UNIVERSITY OF CHINESE ACADEMY OF SCIENCES
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products