342results about How to "Easy to prepare in large area" patented technology

The invention discloses a process method for preparing an ultra-hydrophobic surface by the electrochemical method. The process adopts two processing steps: forming the micro nanometer double-structurerough surface by first electrochemical etching and then oxalic acid anodic oxidation; and preparing the ultra-hydrophobic surface by modifying the surface with fluorosilane. The method is simple andpractical, uses mature electrochemical etching and anodic oxidation technology, allows for easy mass production and avoids environmental pollution.

The invention relates to a method for preparing layered molybdenum disulfide. The layered molybdenum disulfide is in a single-layer or double-layer structure, wherein a chemical vapor deposition method is adopted, elemental molybdenum metal and powdered sulfur is taken as a source, two-dimensional molybdenum disulfide is deposited on the surface of a substrate, the preparation parameters such as deposition temperature and growth time are optimized, and controllable growth of the single-layer or double-layer structure of the high-quality molybdenum disulfide is realized.

Disclosed is a rapid energy transfer annealing (RETA) device and process, where an energy plate is used to rapidly absorb the primary photonic energy of the light source, such as a tungsten halogen lamp (or an xenon Arc lamp), to allow temperature elevation. The energy plate faces an amorphous thin film deposited above a glass or plastic substrate and releases the heat energy transferred by a gas or solid medium to the amorphous thin film,, so as to heat the amorphous thin film for transforming the amorphous thin film into a polycrystalline film. On another side of the glass or plastic substrate may be further provided with a heat sink plate and a supporting plate. The heat sink plate absorbs energy of the glass substrate, protects glass substrate from damages due to overheating. The heat sink plate or the supporting plate may be moved to freely adjust distance between the amorphous thin film and the energy plate and that between the glass substrate and the heat sink plate, so as to control energy transferred to the amorphous thin film and energy released by the glass substrate transfer. The adjustment of distance may be fixed or varied as a function of time so as to randomly adjust the energy transfer. Further, between the glass substrate and the amorphous film may be provided with a heat conducting layer and a heat shielding layer. On another side of the glass substrate may be provided with a heat sink layer. On the amorphous thin film may be provided with a heat absorption layer to control and allow selective crystallization, or to control direction of heat transfer thereby guiding the crystallization to grow in a specific direction.

The invention relates to a 2-2 type ferroelectrics-ferrite multilayer composite magnetoelectric material and the preparation method, which relates to a ferroelectrics-ferrite multilayer composite magnetoelectric material. The invention consists of a ferroelectrics and a ferrite, the ferroelectrics and the ferrite materials are composed by adopting a layered alternate arrangement mode, wherein, the ferroelectrics material selects a lead zirconate titanate PbZr0.52Ti0.48O3 ceramics, and the ferrite selects a cobalt ferrite CoFe2O4 ferrite ceramics. An organic solvent, a plasticizer, a dispersant and a bonding agent are added in PZT powder and are ball milled and mixed to obtain a paste; the paste is treated with screening, defoaming and doctor blade casting to obtain an electrolyte thin film green, demoulding and cutting are carried out; the organic solvent, the plasticizer, the dispersant and the bonding agent are added in CFO powder and are ball milled and mixed to obtain the paste; the paste is treated with screening, defoaming and doctor blade casting to obtain the electrolyte thin film green, the demoulding and cutting are carried out; the PZT green and the CFO green are overlapped alternatively, a multi-layer composite green material is obtained by heating and pressurizing, roasting and hydrostatic pressure processing are carried out, and then sintering and molding are carried out for preparation.

The invention discloses a method for controllable growing of a two-dimensional chalcogen compound atomic-scale film on a metal substrate. The method comprises the following steps that the metal substrate and a reaction source are arranged in a vacuum reaction device, vacuumizing is carried out, and the reaction source is heated at the temperature higher than the melting point of the reaction source and volatilized; and the reaction source is transported to the metal substrate through carrier gas, the reaction source is kept for 1-180 min under the reaction temperature of 250-1,000 DEG C, the reaction happens between the metal substrate and the reaction source, and the thickness-controllable two-dimensional chalcogen compound atomic-scale film is obtained. A chemical vapor deposition method is adopted, the atomic-scale film controllably grows on the homogeneous metal substrate directly through vulcanization, selenylation and tellurium forming, and accordingly the method for preparing a large-area chalcogen compound film is provided.

The invention discloses a tapered super-surface structure based photovoltaic photoelectric detector and a preparation method thereof. The photoelectric detector comprises a metal substrate whose surface includes a 3D nanometer cone array structure, a semiconductor file layer whose forbidden band width is greater than incident photon energy, and a metal film layer; and the metal substrate, the semiconductor film layer and the metal film layer are arranged successively from bottom to top. The preparation method comprises that a porous anodised aluminum film is prepared on the aluminum substrate, the anodised aluminum film in the surface of the aluminum substrate is removed, and the semiconductor film layer and the metal film layer are prepared then. The metal substrate, the semiconductor film layer and the metal film layer for the super-surface structure, the thickness of the metal film layer, the material thickness of the semiconductor layer or a structural parameter of a nanometer cone is controlled to regulate and control the frequency range of super-absorption. The photoelectric detector is simple in preparation technology, convenience is provided for large-area preparation, complex micro nano processing is not needed, and high-effeminacy broadband wide-angle photoelectric detection can be realized.

The invention provides a white-light OLED (organic light emission diode) device. The device comprises a glass substrate as well as a red light color conversion layer, an anode, a hole-transmission layer, a blue light emitting layer, an electronic transmission layer and a cathode which are stacked sequentially, wherein a yellow light color conversion layer is arranged on one surface, facing air, of the glass substrate; the materials of the red light color conversion layer comprise a red light fluorescent material and a red light host material; the materials of the blue light emitting layer comprise a blue light fluorescent material and a blue light host material or comprise a blue light phosphor material and a phosphor host material; the materials of the yellow light emitting layer comprise yellow fluorescent powder and a photocuring adhesive; the light absorption wavelength peak of each of the red light fluorescent material and the yellow fluorescent powder ranges from 460 nm to 470 nm; the material of the anode adopts metal gold or silver. The white-light OLED device can realize emission of white light with stable light color. The invention further provides a preparation method of the white-light OLED device.

The invention relates to a silicon oxide/titanium oxide composite mesoporous flexible non-woven fiber membrane, and a preparation method and an application thereof. The invention belongs to the field of inorganic porous material preparation. According to the invention, a mixed solution of a polymer, water-soluble titanium salt, and a surfactant is prepared; an alcohol salt of silicon is added, and the mixture is strongly stirred and hydrolyzed, such that a spinning solution is prepared; and electrostatic spinning and calcining processes are carried out, such that the silicon oxide/titanium oxide composite mesoporous flexible non-woven fiber membrane is obtained. The silicon oxide/titanium oxide composite mesoporous flexible non-woven fiber membrane has ultra-large specific surface area, excellent chemical stability, excellent thermal stability, excellent mechanical stability, and excellent performance in organic sewage treatment. The method is simple and feasible, has low cost, and has good application prospect.

The invention provides a ZSM-5 molecular sieve composite membrane, comprising a separation layer and a support layer, wherein the separation layer is a metal element modified ZSM-5 molecular sieve; and metal elements are selected from Fe, Al, Sn, Ca, Ni, Cu, Mg, Ge, Zn or Zr and is respectively from metal compounds containing the metal elements. The metal element modified ZSM-5 molecular sieve composite membrane selectively causes organic matters to penetrate, has the advantages of simple preparation method, high membrane forming speed, easily-controlled membrane thickness and good membrane continuity, is easy to prepare on a large area and is practically applied industrially.

The invention discloses a silicon-based nanometer column array heterojunction film solar battery and a preparation method thereof, belonging to the field of solar battery manufacture. The method comprises the following steps: preparing a metal nanocrystalline masking layer on a P-type solar silicon substrate; using the metal nanocrystalline masking for masking, adopting a dry method to erode the silicon substrate and preparing a silicon nanometer column array; removing the metal nanocrystalline masking; sequentially depositing an intrinsic amorphous silicon layer and an N-type amorphous silicon layer and forming heterojunction; and finally, depositing a transparent conductive film layer and preparing an upper contact electrode and a lower contact electrode. The method can once prepare a solar battery array with a large area, greatly decreases the cost, has the advantages of simple preparation technology, low cost, favorable preparation efficiency and technological stability, has technological flows fully compatible with the preparation technology of the prior crystal silicon solar batteries and film silicon solar batteries and is easy to popularize on a large scale.

The invention discloses a perovskite solar cell based on a full-sol-gel process and a preparation method thereof. The perovskite solar cell based on the full-sol-gel process includes a conductive glass substrate (14), a metal oxide layer (13), a perovskite film layer (12), a hole transportation layer (11), and a back electrode contact layer (10) sequentially from top to bottom. A conductive thin film is arranged on the conductive glass substrate (14). The back electrode contact layer (10) is an ITO (indium tin oxide) layer and substitutes traditional Au and Ag and the like and at the same time, BaTiO3, ZnO, and SnO2 and the like are used as the metal oxide layer so that it is realized that in a preparation process, the sol-gel process is used so that the manufacturing cost is reduced and at the same time, the preparation process is simplified and large-area manufacturing is facilitated.

The invention discloses a method for preparing a titanium or titanium alloy super-hydrophobic surface. The method is characterized by comprising the following steps of: symmetrically placing titanium or titanium alloy as an anode and a cathode in parallel, and connecting the anode and the cathode with a direct-current power supply through lead wires, wherein the titanium or the titanium alloy is connected with a positive electrode, and the cathode is connected with a negative electrode; putting the anode and the cathode in electrolyte and switching on the power supply to carry out electrochemical etching, wherein the used electrolyte is NaCl or NaBr water solution; washing the etched titanium or titanium alloy and drying the etched titanium or titanium alloy with air; and modifying the surface of the obtained titanium or titanium alloy by using a material with lower surface energy, and drying the modified titanium or titanium alloy after taking out, so as to obtain the titanium or titanium alloy super-hydrophobic surface, wherein the material with the lower surface energy comprises fluorinated silane, stearic acid, palmitic acid, lauric acid or myristic acid. The method provided by the invention is simple in process, rapid, efficient and good in controllability. Particularly, the method is safe and environmentally-friendly due to the use of the neutral electrolyte, and has a wide application prospect in fields of aviation, aerospace, naval vessel and the like.

The invention discloses a manufacturing method of a thick gas electronic multiplication detector diaphragm board. The method is characterized by including: cutting and cleaning a board clad with copper on two sides; drilling positioning holes; simultaneously pressing light-induced anti-corrosion dry diaphragms on two sides; aligning an external pattern film with the circuit board with the light-induced anti-corrosion dry diaphragms, and exposing the two on an exposure machine; developing and etching to remove copper and the light-induced anti-corrosion dry diaphragms; using a numerical control machine tool to punch hole arrays on the board clad with copper on two sides; spraying the board clad with copper on two sides. The method has the advantages that entire board micro-etching is used for manufacturing, manufacturing of large-area THGEM diaphragm boards is facilitated, the 300*300mm THGEM diaphragm boards is manufactured successfully, and rim uniformity is consistent; full-automatic circuit board manufacturing equipment is used, batch production can be achieved, and yield can reach more than 95%; the THGEM diaphragm boards are independent of reading anode plates and can be designed and machined into different sizes and shapes according to needs.

The invention belongs to the field of a chemical power supply, and particularly relates to a bipolar current collecting body and a bipolar solid-state lithium secondary battery assembled by the bipolar current collecting body. The bipolar current collecting body is prepared from polymers and carbon materials, wherein the polymer materials are polyethylene, polypropylene, polystyrene or polycarbonate resin; the used carbon materials are carbon black, carbon nanometer tubes or Super P. The bipolar solid-state lithium secondary battery is formed by alternating overlapping a solid-state electrolyte membrane for lithium battery and a bipolar electrode comprising the bipolar current collecting body. A polymer-carbon material compound conductive film is used as the bipolar current collecting body; the large-area preparation and the thickness regulation and control are easy; the polymer and the carbon material are low-density materials; under the condition of the same thickness, the mass is lighter than that of metal aluminum and metal copper; the prepared battery has higher energy density; in addition, the voltage of the bipolar solid-state lithium secondary battery can be regulated and controlled through regulating the overlapping layer assembly layer number according to requirements; the space of a battery pile can be further optimized; the total mass is reduced.

The invention provides an organic light-emitting device which comprises an anode substrate, a functional layer, a light-emitting layer, a cathode and an encapsulation layer. Enclosed space is formed by the anode substrate and the encapsulation layer, and the functional layer, the light-emitting layer and the cathode are held in the enclosed space. The encapsulation layer sequentially comprises an organic material film layer, a thermal buffering layer, an inorganic material film layer and a polyethylene glycol terephthalate film layer, wherein the thermal buffering layer is made of SiO or SiO2, and the inorganic material film layer is made of mixed materials formed by V2O5 or MoO3 or ITO or TiO2 or WO3 or GeO2 doped with SiO or SiO2. The encapsulation layer can effectively reduce erosion of oxygen and moisture on the organic light-emitting device, rapid heat conduction can be achieved, heat is evacuated, and therefore the service life of the organic light-emitting device can be effectively prolonged. The invention further provides a preparation method of the organic light-emitting device.

The invention discloses an infrared light perfect absorber and a preparation method thereof, and aims at introducing a colloidal crystal material, utilizing electromagnetic resonance characteristics of a plasmonic element and a colloidal crystal on a metal surface, and adopting a colloid self-assembling method to prepare an infrared light perfect absorber that includes a substrate, a light-proof metal film layer on the substrate and a colloidal crystal-metal thin film resonance structure layer disposed on the metal film layer. The colloidal crystal-metal thin film resonance structure layer iscomposed of multiple identical colloidal crystal particles and a metal thin film deposited on the upper surface of each of the colloidal crystal particles. The colloidal crystal particles are uniformly arranged on the metal film layer. With the colloidal crystal-metal thin film resonance structure layer, the structure of an absorption unit of an original infrared light perfect absorber is simplified, the bandwidth of the absorption spectrum of the infrared light perfect absorber is increased, and the preparation requirements of low cost and easy large-area preparation are satisfied by using the colloid self-assembling method.

The invention relates to a 2D Ti3C2-MXene thin film material, a preparation method thereof and application of the material in an RRAM, and belongs to the technical fields of film preparation and microelectronic functional devices. An MXene film is prepared in the surface of a conductive substrate in a low-temperature one-step solution method, film formation is easy, and the film can be prepared ina large area more easily. The novel 2D material MXene is applied to the memory field instead of a traditional resistive switching material for the first time, the RRAM comprises a hard substrate, a bottom electrode, a resistive switching layer and a top electrode successively from bottom to top, the resistive switching layer is made of the 2D Ti3C2-MXene thin film material and in the thickness of100-450nm, a prepared device, as a nonvolatile memory, can keep the original resistive state when being powered off, and the device is kept stable after multiple continuous cycles, and is resistant to circulation.

The invention provides an organic electroluminescent device comprising an anode conductive substrate, a functional layer, a luminescent layer, a cathode layer, a protective layer, and an encapsulating layer. The encapsulating layer comprises an insulating layer, metallic layers, and plate glass. The insulating layer is arranged in a surrounding manner along the edge of the top surface of the anode conductive substrate. A groove is surrounded by the insulating layer surrounding structure. The functional layer, the luminescent layer, the cathode layer, and the protective layer are successively extended from the top surface of the anode conductive substrate to the groove. The metallic layers are disposed on the top surface of the insulating layer and a gap is arranged between the metallic layers and the functional layer, the luminescent layer, the cathode layer, and the protective layer. The sum of heights of the insulating layer and the metallic layers is more than that of the functional layer, the luminescent layer, the cathode layer, and the protective layer. The plate glass is disposed on the top surfaces of the metallic layers. The invention also provides a method for producing the organic electroluminescent device. The method effectively reduces erosion, caused by moisture and oxygen, on the device, and substantially prolongs the service life of the device.

The invention discloses a protein nano-film based on a sulfhydryl and disulfide bond exchange reaction, and an application thereof. The protein nano-film is obtained by reducing a disulfide bond-containing protein with a sulfhydryl-containing reducing agent and performing the exchange reaction on the sulfhydryl group and a disulfide bond. The nano-film has the advantages of preparation in a largearea, simple preparation method, achieving a mechanical strength without crosslinking, good stability, good optical permeability and good adhesion, and can be adhered to various base materials. The nano-film can be used for encapsulating molecules with different sizes to keep the activity of the molecules and realize controllable release.

The invention provides an organic electroluminescent device, including a light transmission substrate, and a light extraction layer, an anode, an organic luminous functional layer and a cathode which are stacked on the light transmission substrate in sequence. The light extraction layer includes a plurality of oxide layers parallelly arranged on the surface of the light transmission substrate at intervals, a sulfide layer that covers the surfaces of the light transmission substrate and the oxide layers, and a transparent polymer film that covers the surface of the sulfide layer, the oxide layers are in the shapes of long strips, oxides are one or more of titanium dioxide, silicon dioxide and zirconium dioxide, the thickness of the oxide layers is 5 to 10 [mu]m, and the sulfide layer is a continuous thin film layer and has a wave-shaped curved surface structure. According to the organic electroluminescent device, through the arrangement of the light extraction layer, a critical angle of total reflection of an interface of the light transmission substrate is increased, thereby increasing the light extraction efficiency between the light transmission substrate and the anode, and improving the luminous efficiency of the device. The invention also provides a preparation method of the organic electroluminescent device.