Perovskite solar cell based on full-sol-gel process and preparation method thereof

A solar cell and sol-gel technology, which is applied in the field of solar photovoltaic utilization, can solve the problems of complex manufacturing process and high cost, and achieve the effects of simplifying the manufacturing process, reducing manufacturing costs, and facilitating large-area manufacturing

Inactive Publication Date: 2014-10-08
SHANGHAI RES INST OF MICROELECTRONICS SHRIME PEKING UNIV
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Problems solved by technology

The currently reported perovskite solar cells have achieved a conversion efficiency of 15.4%, but most of the back electrode contact layer materials of perovskite sol

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  • Perovskite solar cell based on full-sol-gel process and preparation method thereof

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[0036] The present invention will be further described in detail below with reference to the drawings and embodiments. The following examples are used to illustrate the present invention, but cannot be used to limit the scope of the present invention.

[0037] figure 1 It is a schematic diagram of the structure of a perovskite solar cell based on the all-sol-gel process of the present invention; the perovskite solar cell based on the all-sol-gel process of the present invention is from top to bottom using the Nippon Sheet Glass company of Japan FTO (F-doped tin oxide) conductive glass substrate 14, metal oxide layer 13, perovskite film layer 12, hole transport layer 11, back electrode contact layer 10; the back electrode contact layer 10 is indium tin oxide ITO layer; the metal oxide layer 13 is BaTiO 3 Layer, ZnO layer or SnO 2 Layer; The perovskite film layer 12 is CH 3 NH 3 PbI 3 Layer, CH 3 NH 3 PbBr 3 Layer or CH 3 NH 3 PbCl 3 Layer; The hole transport layer 11 is 2,2',7,7'...

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Abstract

The invention discloses a perovskite solar cell based on a full-sol-gel process and a preparation method thereof. The perovskite solar cell based on the full-sol-gel process includes a conductive glass substrate (14), a metal oxide layer (13), a perovskite film layer (12), a hole transportation layer (11), and a back electrode contact layer (10) sequentially from top to bottom. A conductive thin film is arranged on the conductive glass substrate (14). The back electrode contact layer (10) is an ITO (indium tin oxide) layer and substitutes traditional Au and Ag and the like and at the same time, BaTiO3, ZnO, and SnO2 and the like are used as the metal oxide layer so that it is realized that in a preparation process, the sol-gel process is used so that the manufacturing cost is reduced and at the same time, the preparation process is simplified and large-area manufacturing is facilitated.

Description

Technical field [0001] The invention relates to the technical field of solar photovoltaic utilization, and more specifically to a perovskite solar cell based on a full sol-gel process and a preparation method thereof. Background technique [0002] The phenomenon of photoelectric conversion was first observed by French scientist Henri Becqμerel in 1839. In 1954, the first usable silicon-based solar cell came out. It was a solar cell with a pn junction. This pn junction solar cell uses sunlight to generate working current to provide electricity to the outside world. Silicon-based solar cells have gradually entered the market. However, from a global perspective, due to the high manufacturing cost of silicon-based cells, the installation of photovoltaic cells The capacity is very limited. In addition, silicon-based solar cells are not conducive to manufacturing with flexible materials, and there are obstacles to large-scale production. In 1991, Swiss scientist Glanzell Dye Sensiti...

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Application Information

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IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCY02E10/549H10K71/60H10K30/20H10K30/82
Inventor 刘力锋王逸然王国辉贡献刘晓彦康晋锋
Owner SHANGHAI RES INST OF MICROELECTRONICS SHRIME PEKING UNIV
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