1406 results about "Electrode Contact" patented technology

The invention relates to a micro-display device based on multilayer stacking and a preparation method thereof, the micro-display device comprises a driving backboard and a plurality of pixel layers, and the driving backboard is provided with a first type of electrode contacts; the multiple pixel layers are sequentially stacked in the Z direction, sub-pixels are arranged in each pixel layer, the bottom end of each sub-pixel is electrically connected to the corresponding first type of electrode contact, and the top end of each sub-pixel is electrically connected to the corresponding first conductive layer; in two adjacent pixel layers in the multiple pixel layers, the first conductive layer of one sub-pixel in the upper pixel layer is in direct contact with the first conductive layer of one sub-pixel in the lower adjacent pixel layer. The invention also discloses a preparation method of the micro display device. According to the invention, the processing technology and the cathode interconnection structure are simplified; and meanwhile, the current conduction capability is enhanced, the power consumption of the device is reduced, and the reliability and stability of the display device are improved.

The invention relates to an LED display device based on vertical stacking and a preparation method thereof, the display device comprises a driving backboard and a mother pixel, the mother pixel comprises a plurality of sub-pixels, one of a first type of electrode contact and a second type of electrode contact on the driving backboard is a common-pole contact, and the other one is a non-common-pole contact; the electric connectors comprise common-pole conductive parts and non-common-pole conductive parts, the non-common-pole conductive parts are configured to be electrically connected to the first ends of the corresponding sub-pixels and electrically connected with the corresponding non-common-pole contacts, and the common-pole conductive parts are configured to be electrically connected to the second ends of the sub-pixels and electrically connected with the common-pole contacts to form a common-pole structure; each of the copolar conductive part and the non-copolar conductive part comprises an interconnection conductive part, the interconnection conductive parts are located in the corresponding pixel layers, at least one interconnection conductive part comprises a core body, the core body is a compound semiconductor, and the core body is located in the first inner fence. The invention further discloses a preparation method. The production efficiency and quality of the LED display device can be improved.

The invention belongs to the technical field of medical instruments, and particularly relates to a spinal epidural ventral side double-wing-shaped stimulation electrode and motion function reconstruction system, the spinal epidural ventral side double-wing-shaped stimulation electrode and motion function reconstruction system comprises two wing panels, each wing panel comprises a flexible substrate, the flexible substrate is provided with two bifurcated preset-curvature double-wing structures; the electrode contact array is integrated on the flexible polar plate through a bonding pad; according to the double-wing-shaped flexible substrate, through a double-wing structure with a preset curvature, after being unfolded under the driving of a nickel-titanium alloy framework, the double-wing-shaped flexible substrate accurately covers a spinal cord ventral side and double-side anterior angle motor neuron pool, and the problem that a traditional single-piece / rod-shaped electrode can only cover a back side sensing area and cannot cover a back side sensing area is solved. The ventral motor neuron group cannot be directly activated; a stimulation target spot is transferred to a ventral functional core area from a dorsal non-target area for the first time, and the anatomical suitability bottleneck of motor function reconstruction is solved.

The utility model discloses a tumor electric field treatment device and a treatment system, the tumor electric field treatment device is provided with a frame body and a pole piece module, the frame body forms a skeleton structure of the treatment device, the pole piece module is attached to the frame body, the pole piece module is provided with a plurality of electrode contacts, and each electrode contact can form an active contact or a passive contact. The active contact and the radio frequency generation module can form a loop; after the treatment device is implanted into a tumor excision part, all the electrode contacts form active contacts, and all the electrode contacts and the radio frequency generation module form a loop to distinguish normal tissues from pathological tissues; after the normal tissue and the lesion tissue are distinguished, the electrode contacts in the normal tissue area form passive contacts, and the electrode contacts in the lesion tissue area form active contacts, so that targeted treatment of the lesion tissue is realized, and side effects generated by electric field treatment are reduced.

The invention relates to an LED display device based on vertical stacking and a preparation method thereof. The display device comprises a driving backboard and a mother pixel, the mother pixel comprises a plurality of sub-pixels, one of a first type of electrode contact and a second type of electrode contact on the driving backboard is a common-pole contact, and the other one of the first type of electrode contact and the second type of electrode contact on the driving backboard is a non-common-pole contact; the non-common-pole conductive pieces are configured to be electrically connected to the first ends of the corresponding sub-pixels and electrically connected with the corresponding non-common-pole contacts, and the common-pole conductive pieces are configured to be electrically connected to the second ends of the sub-pixels and electrically connected with the common-pole contacts to form a common-pole structure; each of the copolar conductive part and the non-copolar conductive part comprises at least one interconnection conductive part, a compound semiconductor region is arranged in the pixel layer where the interconnection conductive part is located, a backfill hole is formed in the compound semiconductor region, and the backfill hole is filled with the interconnection conductive part. The invention further discloses a preparation method. The stability and reliability of the LED display device can be improved, and the LED display device is more convenient to process.

The invention relates to an LED display device based on vertical stacking and a preparation method thereof, the display device is provided with a driving back plate and a mother pixel, the mother pixel comprises a plurality of sub-pixels, the driving back plate comprises a first type of electrode contacts and a second type of electrode contacts, and electric connecting pieces comprise copolar conductive pieces and non-copolar conductive pieces. Each non-copolar conductive piece corresponds to a different sub-pixel; one of the first type of electrode contacts and the second type of electrode contacts is a common-pole contact, and the other one is a non-common-pole contact; the driving backboard comprises a plurality of non-common-pole contacts, the plurality of non-common-pole contacts are divided into at least two ring groups, and each ring group corresponds to different sub-pixels; the non-co-polar conductive members are configured to be electrically connected to the non-co-polar contacts in the ring groups of the respective corresponding sub-pixels, and the co-polar conductive members are configured to be electrically connected to the co-polar contacts to form a co-polar structure. The invention further discloses a preparation method. According to the invention, the problem of overhigh local current density in the display device is effectively improved, and the reliability and stability of the device are effectively improved.

The invention relates to a micro-display device which comprises a driving backboard and a plurality of pixel layers, and a mother pixel comprises a plurality of sub-pixels; the top end of each sub-pixel is electrically connected to the corresponding second type of electrode contact through a top conductive layer, and the bottom ends of the plurality of sub-pixels are interconnected through a bottom conductive layer and then electrically connected to the corresponding first type of electrode contact to form a bottom copolar structure; wherein the axes of all the sub-pixels in the mother pixel do not coincide; in the two sub-pixels of different pixel layers, the bottom conducting layers of the two sub-pixels are connected through a common-pole conducting piece, one side of one sub-pixel in the lower pixel layer is provided with at least one non-light-emitting unit to jointly form a unit body, and the common-pole conducting piece penetrates through one non-light-emitting unit in the unit body. The light efficiency and reliability of the micro display device can be improved.

The invention relates to an LED display device based on vertical stacking and a preparation method thereof. The display device comprises a driving backboard and a mother pixel, the mother pixel comprises a plurality of sub-pixels, the driving backboard is provided with a first type of electrode contacts and a second type of electrode contacts, electric connecting pieces comprise copolar conductive pieces and non-copolar conductive pieces, and the non-copolar conductive pieces correspond to different sub-pixels respectively; the first type of electrode contacts are non-common-pole contacts, and the second type of electrode contacts are common-pole contacts; the non-common-pole conductive parts are configured to be electrically connected to the first ends of the corresponding sub-pixels and electrically connected with the non-common-pole contacts corresponding to the sub-pixels, and the common-pole conductive parts are configured to be electrically connected to the second ends of the sub-pixels and electrically connected with the common-pole contacts to form a common-pole structure; an annular reflecting layer surrounds the periphery of at least one sub-pixel, and a first insulating layer is further arranged between the side wall of the sub-pixel and the peripheral annular reflecting layer. The invention further discloses a preparation method. The light-emitting effect of the LED display device is improved.

The invention relates to an LED display device and a preparation method, the LED display device comprises a substrate and a pixel layer, the pixel layer comprises pixel units, the periphery of each pixel unit is at least surrounded by an annular partition groove, each pixel unit is at least partially overlapped with the outermost annular partition groove of the adjacent pixel unit, and the outermost annular partition groove of each pixel unit is at least partially overlapped with the outermost annular partition groove of the adjacent pixel unit. A compound semiconductor is reserved in the non-overlapping area, or a compound semiconductor is reserved between each pixel unit and the outermost annular partition groove of the adjacent pixel unit, so that the pixel units and the adjacent pixel units are completely separated from each other; the top of each pixel unit is electrically connected with the corresponding second-type electrode contact, the bottom of each pixel unit is electrically connected with the corresponding first-type electrode contact, and the second-type electrode contacts are formed on the periphery of the outermost annular partition groove of the corresponding pixel unit. The invention further discloses a preparation method of the LED display device. The heat dissipation capacity of the LED device can be effectively improved, the LED device can emit light stably, and the photoelectric performance and the reliability of the LED display device are guaranteed.

The embodiment of the invention discloses an electrical stimulation parameter determination method, device and equipment, a medium and a medical system. The method comprises the following steps: acquiring a brain three-dimensional model corresponding to a target user of which the brain is implanted with at least one stimulation electrode; determining at least one electrode contact combination corresponding to the target nucleus simulation model according to the first spatial position information of the target nucleus simulation model and the second spatial position information of the electrode simulation model; determining at least one group of candidate electrical stimulation parameters of the electrode contact combination according to the electrode contact combination and a target nucleus simulation model; determining the total power consumption of the stimulator of the candidate electrical stimulation parameters according to a preset total power consumption quantitative model of the stimulator and the candidate electrical stimulation parameters; and determining at least one group of target recommended electrical stimulation parameters from the plurality of groups of candidate electrical stimulation parameters according to the total power consumption of the plurality of stimulators. According to the technical scheme, the effect of accurately screening the recommended electrical stimulation parameters with low energy consumption and efficient stimulation effect according to the electrical stimulation power consumption is achieved.

The invention discloses an electric spark nondestructive testing evaluation method for the integrity of a waterproof layer of a cable trench, and belongs to the technical field of nondestructive testing, and the method comprises the following steps: applying a multi-frequency electric signal through a preset moving electrode; the initial contact pressure of the moving electrode and the surface of the waterproof layer is obtained in real time, the pressure of the contact position of the moving electrode is adjusted, an electric spark signal generated at the defect position of the cable trench waterproof layer by a multi-frequency electric signal applied by the moving electrode is captured, and characteristic parameters of the electric spark signal are extracted to generate current electric spark characteristic data; utilizing the current electric spark characteristic data to distinguish defect types so as to generate a defect evaluation result; and outputting defect distribution information and triggering an acousto-optic alarm according to a defect evaluation result. According to the method, a detection mode of combining multi-frequency electric signal excitation and electric spark signal feature extraction and analysis is adopted, waterproof layer defect types can be distinguished, the severity of the waterproof layer defects can be evaluated, and the detection accuracy is improved.

The invention discloses a water quality monitoring device and a monitoring method thereof, belongs to the technical field of water quality monitoring, and solves the problems that trace hydrogen sulfide generated by sulfate reducing bacteria in a deposited layer at the bottom of a water tank which is not cleaned for a long time in a low-oxygen environment reacts with a platinum membrane electrode of a residual chlorine sensor to generate a platinum sulfide covering layer; and the electrode reading is continuously virtually high and drifts slowly. Comprising an optical transmitting module, an optical receiving module, a spectrum separation module, a signal conditioning module, a lock-in amplification module, a spectrum feature extraction module and a hydrogen sulfide recognition engine. Residual chlorine is monitored in a non-contact mode, deep ultraviolet pulse light is emitted to penetrate through a water body, a reflection spectrum is received, second derivative spectral characteristics are extracted through multichannel signal processing, and multivariable regression compensation is executed to calculate a real residual chlorine value after hydrogen sulfide interference characteristics are recognized. Meanwhile, the drift trend is quantified based on the double-time-constant integral, graded early warning is triggered, industrial standard signals are finally output, and the problem of electrode contact pollution is avoided in the whole process.

A semiconductor device includes a substrate, a buffer layer over the substrate, an n-type electrode overlapping the buffer layer, and an electron injection layer in contact with the n-type electrode over the buffer layer. The electron injection layer includes an n-type dopant and a first nitride semiconductor containing gallium. The first nitride semiconductor further contains at least one element of aluminum and indium.

The invention relates to a micro display device and a preparation method. The micro-display device comprises a driving backboard, a first pixel layer and a second pixel layer, the mother pixel comprises a plurality of sub-pixels, the bottom end of each sub-pixel is electrically connected to the corresponding first-type electrode contact through a bottom conductive layer, and the top ends of the plurality of sub-pixels are interconnected through a top conductive layer to form a top copolar structure; a hole channel is formed in one sub-pixel in the first pixel layer, a peripheral light-emitting area is formed on the periphery of the hole channel, and a non-copolar conductive piece penetrates through the hole channel. At least part of light emitted by the peripheral light-emitting area is emitted out through the periphery of the upper sub-pixel electrically connected with the non-copolar conductive piece in the hole channel. A color conversion layer is also arranged above the first pixel layer; and the color conversion layer is positioned on a light emitting path of the corresponding sub-pixel in the first pixel layer. The invention further discloses a preparation method. The light efficiency and the reliability of the micro display device can be effectively improved.

A display device comprises electrode patterns spaced apart from each other in a first direction; a via layer disposed on the electrode patterns; first electrodes, each of the first electrodes partially overlapping an electrode pattern of the electrode patterns on the via layer in a plan view and extending in a second direction intersecting the first direction; second electrodes, each of the second electrodes comprising a portion extending in the second direction, the first electrodes and the second electrodes being spaced apart from each other and alternately disposed with each other; and light emitting elements disposed on a first electrode of the first electrodes and a second electrode of the second electrodes. The first electrodes are in contact with the electrode patterns through first electrode contact holes penetrating the via layer, and the first electrode contact holes are spaced apart from each other in the first direction.

The invention provides a method for testing the contact resistance of a solar cell film, which comprises the following steps of: preparing a plurality of multi-layer stacked test samples with different thicknesses, and alternately depositing an amorphous silicon film and a transparent conductive oxide film on a glass substrate of each sample to form a horizontal laminated structure; respectively arranging silver electrodes on the left side and the right side of each sample for performing voltage-current volt-ampere test, and recording the total resistance of each sample in a specified voltage range and the change condition of the total resistance along with the thickness of the film layer; electrode contact resistance is measured and deducted; reversely deducing the resistance value when the thickness of the film layer is 0 through an extrapolation method to obtain the contact resistance between the film layers; and calculating the contact resistance of a single interface according to the number of contact interfaces of the amorphous silicon film and the transparent conductive oxide film in the sample. The method is suitable for a test system under different manufacture procedures and thickness changes, and quantitative extraction of the contact resistance between the amorphous silicon and the TCO is achieved.

The invention provides a gel electrolyte with a controllable polymerization degree, a preparation method of the gel electrolyte, a semi-solid lithium ion secondary battery and a preparation method of the semi-solid lithium ion secondary battery, and relates to the technical field of lithium ion batteries. Raw materials for preparing the gel electrolyte comprise a cyclic ether monomer, an initiator and a polymerization inhibitor; the cyclic ether monomer is subjected to ring opening polymerization to obtain an ether polymer; the polymerization inhibitor is an inorganic lithium salt, and the polymerization degree of the gel electrolyte is determined by the dosage of the polymerization inhibitor and the dosage of the initiator. The gel electrolyte provided by the invention has the fluidity advantage of a liquid electrolyte and the flexibility advantage of a solid polymer electrolyte, and is beneficial to maintaining a stable contact interface between the electrolyte and an electrode, reducing interface impedance and improving ion transmission.

The invention relates to an anti-radiation five-junction solar cell and a preparation method thereof, and belongs to the technical field of semiconductor devices. The radiation-proof five-junction solar cell comprises a substrate, and a first buffer layer, a first component order change buffer layer, a fourth sub-cell, a second component order change buffer layer, a fourth tunnel junction, a fifth sub-cell and an electrode contact layer which are sequentially stacked on a first surface of the substrate, a second buffer layer, a third tunnel junction, a third sub-cell, a second tunnel junction, a second sub-cell, a first tunnel junction, a first sub-cell and a cap layer are sequentially stacked on the second surface of the substrate; and the base region thicknesses of the second sub-cell, the third sub-cell and the fourth sub-cell are smaller than the respective emitter region thicknesses. The anti-radiation five-junction solar cell comprises a plurality of sub-cells with quantum well structures, so that the anti-radiation performance of the solar cell can be effectively improved, and the last-stage use efficiency of the solar cell is further remarkably improved.

The invention relates to an LED display device and a preparation method, the LED display device comprises a substrate and a pixel layer, the pixel layer comprises pixel units, the periphery of each pixel unit is at least surrounded by an annular partition groove, each pixel unit is at least partially overlapped with the outermost annular partition groove of the adjacent pixel unit, and the outermost annular partition groove of each pixel unit is at least partially overlapped with the outermost annular partition groove of the adjacent pixel unit. The compound semiconductor is reserved in the non-overlapping region; or, a compound semiconductor is reserved between each pixel unit and the outermost annular partition groove of the adjacent pixel unit, so that the pixel units and the adjacent pixel unit are completely separated from each other; the top of each pixel unit is electrically connected with the second type of electrode contacts, the bottom of each pixel unit is electrically connected with the first type of electrode contacts, the projection area of each pixel unit on the substrate is defined as a first projection area, and the second type of electrode contacts are formed in the first projection area of the corresponding pixel unit. The invention further discloses a preparation method of the LED display device. The photoelectric performance and the reliability of the LED display device can be improved.

The invention relates to an LED display device and a preparation method thereof. The LED display device comprises a substrate, the substrate is a driving wafer, a pixel layer is a compound semiconductor layer, the pixel layer is located on the upper portion of the substrate, pixel units and interconnection conductive parts are arranged in the pixel layer, the tops of the pixel units are electrically connected with corresponding second-type electrode contacts through the interconnection conductive parts, and the second-type electrode contacts are electrically connected with the pixel units through the interconnection conductive parts. The bottoms of the pixel units are electrically connected with the corresponding first type of electrode contacts; wherein the compound semiconductor layer is provided with a second type of electrode filling hole, the second type of electrode filling hole is internally provided with an interconnection conductive piece, and the interconnection conductive piece is a metal piece. The invention further discloses a preparation method. According to the invention, the heat dissipation capability of the whole LED device is effectively improved, the preparation process is simplified, the production cost is reduced, and the production efficiency is improved.

The invention discloses a neural microelectrode for electrical stimulation combined with drug release and a preparation method thereof.The neural microelectrode comprises a first flexible substrate layer, a drug-loaded slow-release layer, a second flexible substrate layer, a conductive layer and an insulating covering layer, and the drug-loaded slow-release layer contains chitosan microspheres embedded with drugs; the medicament comprises nerve growth factors and / or anti-inflammatory drugs, a plurality of drug release holes are distributed in the insulating covering layer, an electrode contact is arranged at one end of the conducting layer, a lead connector is electrically arranged at the other end of the conducting layer, and openings for exposing the electrode contact and the lead connector are correspondingly formed in the two ends of the insulating covering layer respectively. According to the neural microelectrode provided by the invention, the drug-loaded slow-release layer is integrated in the neural microelectrode, so that a space for storing a drug does not need to be additionally processed on the membrane layer, and the drug does not need to be additionally loaded, so that the production and processing are relatively convenient and rapid; after the neural microelectrode is implanted into a corresponding tissue in a body, the drug-loaded sustained-release layer can be gradually degraded to slowly release a medicament for repairing nervous tissues or avoiding rejection reaction in a long-acting manner.

A refrigerator may include a body including a compartment; a first door and second door coupled to the body, and that are rotatable to open and close a first and second region of the compartment, respectively; a rotation guide including a first electrode to receive power from the body; a rotating bar on the first door, that is rotatable, and includes a heater and a second electrode to supply power to the heater, wherein, with the second region closed by the second door, as the first door closes the first region, rotation of the rotating bar is guided by the rotation guide such that, the rotating bar covers a gap between the first and second door, and with the first region closed by the first door, the first and second electrode contact such that the heater is powered by the power from the body.

A non-volatile memory device comprises a substrate, a mold structure that includes gate electrodes stacked on the substrate and mold insulating layers alternately stacked with the gate electrodes, a cell contact on the substrate, wherein the cell contact is electrically connected to a selection gate electrode of the gate electrodes and is not electrically connected to a non-selection gate electrode of the gate electrodes, an insulating ring on the substrate, wherein the insulating ring is between the non-selection gate electrode and a sidewall of the cell contact and is in contact with the non-selection gate electrode, and a high dielectric constant layer between respective ones of the gate electrodes and the mold insulating layers, wherein the insulating ring includes a first portion that overlaps the high dielectric constant layer in a vertical direction, and a second portion that does not overlap the high dielectric constant layer in the vertical direction.

A characteristic measuring jig includes a support, an impedance measuring part, and an elevating part configured to elevate the impedance measuring part. The impedance measuring part includes first and second positive electrode contact parts in contact with the positive electrode terminal, first and second negative electrode contact parts in contact with the negative electrode terminal and opposite to the first and second positive electrode contact parts, a first terminal for current connected to the first positive electrode contact part for applying current to the battery cell, a first terminal for voltage connected to the second positive electrode contact part for measuring the voltage of the battery cell, a second terminal for current connected to the first negative electrode contact part for applying current to the battery cell, and a second terminal for voltage connected to the second negative electrode contact part for measuring voltage of the battery cell.

The invention discloses a back contact battery and a photovoltaic module, and the back contact battery comprises a battery body, at least one electrode pattern region, a plurality of first current collection grid lines, a plurality of second current collection grid lines, a plurality of first confluence part groups and a plurality of second confluence part groups, each first confluence part group comprises a plurality of first confluence parts and a plurality of first connecting parts which are alternately distributed in the second direction, the first confluence parts are electrically connected with the first collector grid lines, the first connecting parts are electrically connected with the second collector grid lines, and the plurality of first confluence part groups comprise middle first confluence part groups and edge first confluence part groups; the number of the first connecting parts in the edge first confluence part group is smaller than the number of the first connecting parts in the middle first confluence part group. In the embodiment of the invention, the probability of contact between the interconnection piece and the opposite electrodes caused by deviation of the insulating layer close to the edge of the battery piece can be reduced, so that the risk of short circuit can be reduced.

The invention provides a thin film photovoltaic module, a laminated photovoltaic module and power generation equipment, and relates to the field of photovoltaic technology. The thin film photovoltaic module comprises a substrate, a battery pack and a bypass structure, the battery pack is arranged on the substrate, and the battery pack comprises a plurality of sub-batteries which are sequentially connected in series. The sub-battery comprises a first electrode, a battery layer and a second electrode which are sequentially stacked, the first electrode is in contact with the substrate, the first electrode comprises a first sub-electrode and a second sub-electrode which are arranged at an interval, and the second electrode is in contact with the first sub-electrode. The bypass structure is used for being connected with the battery pack in parallel, in the bypass structure and the battery pack which are connected in parallel, the bypass structure is electrically connected with the second electrode of the sub-battery located at one end of the battery pack and the second sub-electrode of the sub-battery located at the other end of the battery pack, and the bypass structure is conducted under the condition that one sub-battery in the battery pack is shielded. And reverse bias protection can be realized for a plurality of sub-batteries in the battery pack through the bypass structure, so that the processing cost can be reduced.

Integrated circuit structures having stress-inducing gate cut plugs are described. For example, a structure includes a first vertical stack of horizontal nanowires or fin over a first sub-fin. A first gate structure is over the first vertical stack of horizontal nanowires or fin. A second vertical stack of horizontal nanowires or fin is over a second sub-fin. A second gate structure is over the second fin. A gate cut separates a first gate electrode of the first gate structure from a second gate electrode of the second gate structure. A gate cut fill structure is in the gate cut, the gate cut fill structure including a first dielectric material portion in contact with the first gate electrode, a conductive via portion, and a second dielectric material portion in contact with the second gate electrode. The conductive via portion separates the first dielectric material portion from the second dielectric material portion.

The invention relates to an LED display device based on vertical stacking and a preparation method thereof, the display device comprises a driving back plate and a mother pixel, the mother pixel comprises a plurality of sub-pixels, the driving back plate is provided with a first type of electrode contacts and a second type of electrode contacts, and an electric connecting piece comprises a copolar conductive piece and a non-copolar conductive piece; one of the first type of electrode contacts and the second type of electrode contacts is a common-pole contact, and the other one is a non-common-pole contact; the driving backboard comprises a plurality of non-common-pole contacts, the plurality of non-common-pole contacts are divided into at least one ring group, each ring group at least corresponds to two sub-pixels, and each ring group at least comprises two non-common-pole contacts which are used for being electrically connected with different sub-pixels respectively; the non-common-pole conductive parts are configured to be electrically connected to the corresponding non-common-pole contacts in the ring groups corresponding to the respective sub-pixels, and the common-pole conductive parts are configured to be electrically connected to the common-pole contacts to form a common-pole structure. The invention further discloses a preparation method. The reliability and the stability of the LED display device can be improved.

The present invention relates to the technical field of medical electrophysiology catheters, and in particular to a detection system for indicating the degree of contact between catheter electrodes. The system comprises a magnetic field positioning module, a data acquisition module, and an contact detection module. The magnetic field positioning module is used to obtain the relative distance of an electrode relative to a reference point; the data acquisition module is used to obtain the impedance of the electrode relative to the reference point; and the contact detection module locates cells in the total target area based on the relative distance and impedance, and calculates the electrode contact index based on a pre-fitted relationship curve between electrode distance and impedance in the located cells. The contact degree between multiple electrodes and tissue can be obtained in real time. When the electrodes are installed on a catheter, the contact degree between each catheter electrode and tissue is displayed in real time.

A semiconductor device is provided. The semiconductor device includes a substrate, a first gate electrode, a second gate electrode, and an isolation structure. The first gate electrode is over the substrate and the second gate electrode is laterally adjacent thereto. The isolation structure is in contact with the first gate electrode and the second gate electrode.