The invention relates to the technical field of
heterojunction solar cells, and particularly discloses a selective
electrode contact
heterojunction cell preparation method and a
heterojunction cell, and the method comprises the steps: carrying out the first texturing of a
silicon wafer substrate, carrying out the
mask layer preparation of the textured
silicon wafer, and carrying out the first patterning
processing of the
silicon wafer. Performing slotting treatment on two sides of the silicon wafer based on
picosecond laser, performing secondary texturing on the silicon wafer, placing the cleaned silicon wafer in a second texturing
mixed solution so as to generate a large textured
pyramid structure on the inner bottom surface of a groove in the two sides of the silicon wafer, and removing the first
mask layer from the silicon wafer after secondary texturing to obtain a second textured
pyramid structure; sequentially depositing a plurality of
layers including an intrinsic
amorphous silicon layer and the like on the two surfaces of the silicon wafer, printing a second
mask layer in a
counterpoint manner in other areas of the silicon wafer which is provided with the groove in the first time of patterning based on
exposure and development,
electroplating a
copper grid line on the silicon wafer, and sequentially removing the second
mask layer and a
copper seed layer on the silicon wafer after
electroplating the grid line; the selective
electrode contact
copper grid line heterojunction
solar cell is obtained, the problem of grid separation of the copper grid lines is solved, and the
cell efficiency is improved.