240 results about "Electrode Contact" patented technology

An example semiconductor device includes a first cell active pattern and a first dummy active pattern, arranged in a first horizontal direction; a first gate electrode adjacent to the first cell active pattern and the first dummy active pattern; a first cell gate dielectric layer between the first cell active pattern and the first gate electrode, and a first dummy gate dielectric layer between the first dummy active pattern and the first gate electrode; a first gate contact plug contacting the first dummy active pattern and the first gate electrode; and a bit line disposed at a lower level than the first cell active pattern, connected to the first cell active pattern, and spaced apart from the first dummy active pattern.

This invention discloses a high-voltage capacitor safety discharge device and method, relating to the field of safety discharge technology. The device includes a discharge box, a resistor box, and a control box. The top of the discharge box is equipped with a test electrode for connection to the component to be discharged. Inside the discharge box are at least two robotic arm modules and a voltage divider for monitoring the voltage of the component to be discharged. A conductive electrode is located at the end of each robotic arm module facing the test electrode. The resistor box contains at least two sets of discharge resistors with different resistance values ​​and a temperature sensor. The input terminal of each discharge resistor is connected to a corresponding conductive electrode, and the output terminals of each discharge resistor are connected in series with a current sensor and then grounded. The control box is configured to control at least one robotic arm module to move towards or away from the test electrode based on signals output from the voltage divider, current sensor, and temperature sensor, thereby controlling at least one conductive electrode to contact or disconnect from the test electrode. This invention can improve safety during the discharge process.

An example of a sliding contact strip capable of suppressing frequent arc discharges is disclosed. [Solution] The sliding contact strip 1 is provided with an insulating portion 4 on the sliding contact surface 3 that has a higher electrical resistance than the conductive portion (parts other than the insulating portion 4), and the insulating portion 4 is provided only on a portion of the sliding contact surface 3 in the width direction. Therefore, the occurrence of arc discharge between the trolley wire and the insulating portion 4 can be suppressed, and even if arc discharge occurs between the trolley wire and the conductive portion 5, the continuous and frequent occurrence of such arc discharge can be suppressed. Consequently, premature damage to the sliding contact strip 1 can be suppressed.

This utility model discloses a short-circuit troubleshooting tool for electronic cigarette batteries. It relates to the field of electronic cigarette testing technology and includes a testing component. The testing component has a replacement component at its bottom. The testing component includes a handle, a connecting part at its bottom, a mounting block at the bottom of the connecting part, and a connection hole at the bottom of the mounting block. The replacement component includes a replacement head, a mounting slot at its top, and a connection plug fixedly installed inside the mounting slot. The mounting block is inserted into the mounting slot, and the connection plug is inserted into the connection hole. The replacement head has a testing head at its bottom, a positioning head at its bottom, and an electrode contact at its bottom. This utility model allows for convenient replacement of the replacement component according to the electronic cigarette battery to be tested, facilitating short-circuit troubleshooting and possessing high practical value.

A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a substrate having a trench and a gate structure in the trench. The gate structure includes a lower gate electrode, an upper gate electrode disposed over the lower gate electrode, and a silicide layer contacting the upper gate electrode.

The application relates to the fields of microelectronic packaging and novel display technology, and discloses a packaging method suitable for a hybrid device packaging structure of a MicroLED, which comprises the following steps: preparing a wide-bandgap semiconductor driving chip, a logic control chip and a light-emitting pixel chip; transferring and fixing the wide-bandgap semiconductor driving chip, the logic control chip and the light-emitting pixel chip on the surface of a carrier plate in a coplanar mode; depositing a dielectric layer on the surface of the carrier plate to expose electrode contacts; manufacturing metal wires to build an internal electrical interconnection structure and lead out a peripheral interface; coating a packaging material on the surface of the carrier plate to insulate and coat the internal electrical interconnection structure; curing and cutting to separate an independent pixel packaging body; and assembling the pixel packaging body to a display panel substrate and connecting the peripheral interface to a global power supply network. The application suppresses the hot carrier effect under high-temperature working conditions, solves the problem of thermal failure, reduces the parasitic capacitance of high-frequency driving interconnection, removes potential failure products before macroscopic mounting, and improves the assembly yield of a display panel array.

This invention relates to a graphene spin device, its construction method, and a method for measuring nonlocal signals. The construction method of the graphene spin device includes the step of setting electrodes on the graphene surface; wherein, the electrodes are set by magnetron sputtering, using a direct current, and the magnetron sputtering power is 200±10W. This invention creates defects at the contact point between the graphene and the electrodes through magnetron sputtering under specific conditions, forming serrated graphene edges. Then, it utilizes the unique magnetism of graphene to construct a spin device. This spin device has high spin polarization and long spin transport distance. More importantly, this spin device relies solely on the magnetism of the graphene itself for spin injection and spin detection, providing a new approach for the development of graphene spin devices. It can be used for nonlocal measurements at room temperature, has low requirements for experimental environmental conditions, and is beneficial for exploring some nontrivial electrical mechanisms.

A semiconductor device includes an insulating layer having formed therein a gate electrode and overlying a substrate, a stack of a gate dielectric including a gate dielectric material, a dielectric diffusion barrier liner including a dielectric diffusion barrier material, and an active layer overlying a top surface of the gate electrode, and a source electrode and a drain electrode contacting a respective portion of a top surface of the active layer. The dielectric diffusion barrier material is different from the gate dielectric material and is selected from a dielectric metal oxide material and a dielectric compound of silicon, and suppresses loss of metallic elements during subsequent anneal processes.

The utility model discloses a kind of assembly structure of integrated positive and negative pole plate, it is related to electrode design technical field, including several row pipes, the row pipe has several single pipes and is formed into horizontal arrangement, the top of row pipe is provided with two sheaths, two the sheaths are symmetrically arranged at the two sides of row pipe, and one end of the sheath is equipped with electrode contact point, compared with prior art traditional single-sided electrode plate, positive and negative pole plate needs to be staggered, and the structure of gap for another polarity row pipe insertion needs to be reserved between the same polarity row pipe, by forming integrated design by separating positive and negative pole and arranging row pipe two sides, no need to control assembly gap when vertically assembling, not only greatly shorten assembly time, but also can reduce row pipe spacing, significantly save the space occupied by positive and negative pole plate whole after assembly.

The present application relates to a kind of electrolysis method of chlorine ion-containing water, electrolytic device and layered electrode.The electrolysis method of chlorine ion-containing water of the present application includes the following steps: make chlorine ion-containing water contact with chlorine ion selective barrier material, obtain treated water, then make the treated water contact with electrode, to occur the decomposition reaction of water and obtain oxygen and hydrogen, while obtaining undecomposed water, wherein by selecting the chlorine ion selective barrier material, to meet at least one condition defined in the specification.The present application improves the reaction efficiency while inhibiting the adsorption of chlorine ions by using selective chlorine ion selective barrier material, the operation method is simple and easy to realize large-scale production, so it has significant production advantages.

This application discloses a battery cell, a composite electrolyte, a battery device, and an electrical device. The battery cell of this application includes a positive electrode, a composite electrolyte, and a negative electrode. The composite electrolyte includes a solid electrolyte sheet and a liquid electrolyte. The solid electrolyte sheet is disposed between the positive and negative electrode sheets and includes a solid electrolyte and multiple voids. The liquid electrolyte can permeate through the voids. In the composite electrolyte, the mass percentage of the solid electrolyte is A, and the mass percentage of the liquid electrolyte is B. The mass percentages of the solid electrolyte and the liquid electrolyte satisfy: 5 ≤ A / B ≤ 950. In the composite electrolyte of the battery cell of this application, the solid electrolyte and liquid electrolyte are combined. The liquid electrolyte can permeate through the voids in the solid electrolyte sheet, thereby improving the ionic conductivity and effectively improving the problem of poor contact at the electrolyte-electrode interface.

An array substrate is manufactured by five time patterning processes and includes connecting electrodes. The connecting electrodes include a first connecting electrode and a second connecting electrode. The first connecting electrode is in contact with the source electrode contact area through the first contact hole and in contact with the source electrode through the third contact hole. The second connecting electrode is in contact with the drain electrode contact area through the second contact hole, and in contact with the drain electrode through the fourth contact hole.

A semiconductor memory device includes a stacked structure including mold insulating films and gate electrodes alternately stacked in a vertical direction; a gate contact penetrating at least a part of the stacked structure and electrically connected to one of the gate electrodes; a first spacer on sidewalls of the gate contact; and a second spacer between the gate contact and the first spacer. The gate contact includes an extension portion extending in the vertical direction and a bulge portion protruding in a horizontal direction at one end of the extension portion and contacting the one of the gate electrodes, and at least a part of a bottom surface of the second spacer contacts the bulge portion.

This invention belongs to the field of electric heating technology, specifically relating to an axial straight-slot electric heating element based on a non-metallic heating material and its preparation method. It includes an electric heating element body with a straight slot. The two side walls of the slot serve as the positive and negative electrodes of the electric heating element, respectively. Several high-temperature resistant ceramic gaskets are inserted into the slot in a pluggable manner, filling the gaps between the slots. A sealing ceramic ring is fitted on the top of the electric heating element body. A metal conductive sheet is connected to the top end face of the electric heating element body, and an insulating sleeve is fitted over the metal conductive sheet. The metal conductive sheet is connected to an external wire. The beneficial effect of this invention is that by embedding high-temperature resistant ceramic gaskets, the positive and negative electrodes of the electric heating element are effectively physically isolated, eliminating the risk of short circuits caused by structural deformation of the electric heating element after long-term operation at high temperatures.

This invention relates to the field of optical inspection technology, specifically to a micro LED wafer-level rapid defect localization system based on photoluminescence. A broadband pulse excitation module outputs pulsed laser light matching the characteristics of the material under test; a two-dimensional scanning platform carries the wafer and achieves nanometer-level precise positioning; a time-resolved acquisition module collects fluorescence signals and converts them into time-resolved photoluminescence data; a data processing and control module synchronously controls the operation of each module, receives and processes the time-resolved photoluminescence data, extracts the transient luminescence intensity and carrier lifetime of each detection point, compares the two-dimensional feature vector formed by these two parameters with a preset defect feature database, identifies the defect type of each micro LED chip, and generates a wafer-level defect fingerprint spectrum. This system can accurately distinguish different types of failure modes such as epitaxial defects, surface state defects, and poor electrode contact, significantly improving detection efficiency and defect classification accuracy.

The application provides a manufacturing method of a double-layer power-supplementing light-emitting diode lamp strip, which comprises the following steps: providing a lamp strip circuit board provided with positive and negative electrode contacts and a communication hole and a power-supplementing circuit board provided with corresponding positive and negative electrode connecting parts; stacking the power-supplementing circuit board on the back side of the lamp strip circuit board; applying solder from one side of the lamp strip circuit board; making the solder contact the corresponding connecting parts through the communication hole; and forming interlayer conduction through one-time soldering to obtain a light-emitting diode lamp strip with a back-side power-supplementing path. The prepared lamp strip can improve the light-emitting stability of the rear section of the lamp strip with a relatively long length.

A probe card and a method for inspecting a light emitting element are disclosed. In one aspect, the probe card includes a probe substrate, a plurality of piezoelectric elements disposed on one surface of the probe substrate, and a plurality of electrode units disposed on the plurality of piezoelectric elements. Each electrode unit includes a plurality of pin electrodes, and each piezoelectric element of the plurality of piezoelectric elements corresponds one to one with each pin electrode of the plurality of pin electrodes. By applying a voltage to each piezoelectric element, its shape can be deformed to change the Z axis position of the corresponding pin electrode. This allows the probe card to adjust the height of individual pin electrodes for contacting electrodes of light emitting elements on a wafer, enabling accurate electrical inspection even when wafer flatness or electrode positions vary.

The application discloses an integrated automatic blood-squeezing peripheral blood glucose detection device, which comprises a host computer (1) and a detachably connected disposable sterile integrated core (2). The disposable sterile integrated core (2) comprises a microneedle assembly (4), an elastic squeezing structure (3) arranged around the microneedle assembly (4), a blood glucose detection test paper (6), a capillary blood guiding channel (5) and an electrode contact (7). When the microneedle assembly (4) completes skin puncture, the elastic squeezing structure (3) applies synchronous micro mechanical squeezing force to the tissue around the blood sampling site, so that blood seeps out and is automatically transported to the blood glucose detection test paper (6) through the capillary blood guiding channel (5). The blood glucose detection test paper (6) is internally integrated in the disposable sterile integrated core (2), and the electrode contact (7) is used for electrical connection with the host computer (1). The application realizes the integration of blood sampling, automatic blood squeezing, blood guiding and detection by using a pure mechanical structure, and does not need manual blood squeezing and manual sample adding. The application has the advantages of simple structure, low cost, simple operation, safety and sanitation, and is suitable for rapid blood glucose detection in family and hospital scenes.

This invention relates to the field of welding equipment technology, specifically to a welding device for processing metal supports, comprising a frame, a lower welding assembly, and an upper welding assembly. The lower welding assembly includes a lower welding electrode, and the upper welding assembly includes a power drive unit, an upper welding electrode, and two auxiliary blocks. The power drive unit can slide up and down relative to the frame. The upper welding electrode and the two auxiliary blocks are all connected to the power drive unit. A first protective plate and a second protective plate are respectively mounted below the two auxiliary blocks. A metal pressure plate is hinged to the bottom of the first protective plate, and the metal pressure plate is slidably connected to the second protective plate. When the power drive unit drives the upper welding electrode and the two auxiliary blocks to move down synchronously, the two auxiliary blocks can drive the first and second protective plates to move away from each other, so that the metal pressure plate pre-flattens the protrusions on the surface of the metal support workpiece, and then the upper welding electrode contacts the metal pressure plate to complete the welding operation, making the welding contact more uniform, thereby ensuring the welding quality.

Active transmitter, touch processing device and its touch system and method, active transmitter contains contact surface, contact surface contains first and second driving electrodes with line segment between them, contact surface corresponds to different lines respectively. The device and method make connection touch panel to detect active transmitter, first touch electrode intersects with multiple second touch electrodes, device contains connection network module, sensing circuit module, processor module, interface module. System contains active transmitter, touch panel, device and host. Its method detects first and second driving signals by multiple first and second touch electrodes respectively; calculates first and second positions respectively; and length of line segment between two positions; finds out first contact surface of multiple contact surfaces of active transmitter; and returns first contact surface of active transmitter close to touch panel. So that touch processing device of touch panel can know the position, direction and input from which contact surface to touch panel of equipment.

The invention discloses an automatic switching device for shallow drainage of a foundation pit and an operation method. The device comprises a supporting assembly, a water level adjusting assembly, a control assembly and a power supply assembly. The supporting assembly is matched with different foundation pit foundations through the balance weight base and the foldable thorns. The water level adjusting assembly accurately sets a water drainage starting position and a water drainage stopping position through a scale water level rod and a telescopic compression rubber barrel. The control assembly is linked with an electrode contact through a buoyancy flap valve and a one-way self-closing valve, and accurate response to the water level is achieved; and the power supply assembly ensures power utilization safety through a voltage transformation switch. According to the automatic switching device, the buoyancy flap valve and the one-way self-closing valve are arranged at the top and the bottom of the compression rubber cylinder respectively, and the electrode contact is arranged in the cylinder, so that accurate control over the water level is achieved, the electrode contact is protected through the closed space, and false triggering of the electrode contact caused by infiltration of a small amount of accumulated water is avoided; the problems that the drainage pump is frequently started and stopped, drainage is not timely, structures are flooded, the pump is burnt after water is dried and the like are solved, and automation of drainage engineering is achieved.

The utility model relates to the technical field of electrode, disclose a kind of electrode for direct current electric arc furnace, including the joint of electrode and joint hole, thread is double line T type buckle, in the cylindrical joint hole of same electrode, the joint processing two parallel and phase difference 180 °'s T type buckle thread, form two independent thread entrances, pitch is 6.34mm, 8.47mm etc.;Electrode end surface sets up triangular center positioning ring;Two electrode contact end face is concave, concave degree 0.1-0.3mm.Electrode diameter 960-1400mm, joint diameter is 75% of electrode diameter, joint hole diameter is joint diameter plus 6mm, electrode joint length is not less than 270mm, joint hole depth is joint length plus 15mm.The utility model improves connection efficiency by double line T type buckle thread, triangular center positioning ring guarantees coaxiality, concave end surface improves thermal shock resistance, size cooperation ensures firm connection, solve the existing electrode connection efficiency low, coaxiality is insufficient, easy to drop furnace and so on.

The apparatus comprises an implant 200, which may be a cochlear implant, having a plurality of electrodes, a memory 102 configured to store instructions and a processor 104 configured to execute the instructions. When executed the apparatus transmits to a pulse generator 110 an electrode operation signal 106 configured to generate a current pulse on a first pair of electrodes of the implant (202-208, fig 2), receive a first impedance signal 108a from a first measurement pair of electrodes due to interaction of the current pulse with the electrically conductive volume. Then receive a second impedance signal 108b from a second measurement pair of electrodes due to interaction with the electrically conductive volume. The first measurement pair of electrodes and the second measurement pair of electrodes are different. The processor then uses a predetermined mapping relationship to determine a distance between an electrode contact surface on the implant and a wall of the electrically conductive volume and output the determined distance. A surgical instrument for implant insertion is also disclosed. [Figure 1 to accompany the abstract]

The application provides a P-on-n type tellurium cadmium mercury in-situ growth embedded planar heterojunction detector, characterized by comprising, from bottom to top, a substrate material layer, an n-type absorption layer, an n-type isolation grid layer for isolating pixels, an array P-type cap region located in the isolation grid of the n-type isolation grid layer, a passivation layer covering the n-type isolation grid layer and the array p-type cap region, an electrode contact hole arranged in the array P-type cap region and not covered by the passivation layer, and a contact electrode layer arranged in the electrode contact hole. The n-type isolation grid layer is used for isolating tellurium cadmium mercury heterojunction materials into independent pixels, the array P-type Cap region is used for growing and forming a pixel structure, a tellurium cadmium mercury p-on-n heterojunction detector is obtained, damage to the tellurium cadmium mercury material is effectively avoided, leakage caused by poor coverage and interface compactness of the passivation layer is avoided through planar passivation, interface defects are reduced, tunneling current is inhibited, and the performance of the detector is improved.

The application provides a 4H-SiC trench type insulated gate bipolar transistor and a manufacturing method thereof. A first trench is formed in an N-type buffer layer, a P-type trench collector and an N-type trench collector are formed in the first trench, the P-type trench collector covers a surface of the first trench, the N-type trench collector is located in the P-type trench collector, a P-type collector is formed on a second surface of the N-type buffer layer, and a collector electrode covers the P-type collector, the P-type trench collector and the N-type trench collector. Contact between the collector electrode and the P-type trench collector is conducive to improving the on-current of the 4H-SiC trench type insulated gate bipolar transistor. The P-type trench collector and the N-type trench collector are formed in the first trench, so that an extraction channel of excess electrons is formed in the device in the off transient state, the recombination component of electrons and holes is reduced, the electric field on the reverse-biased PN junction can accelerate the extraction of electrons, and the off speed is greatly improved.

This invention discloses a temperature-controlled EEG cap. The cap comprises a cap body, multiple electrode units, and a central control unit. Each electrode unit includes electrode contacts and a thermo-phase-change conductive gel with embedded heating elements. This gel exhibits thermo-reversible phase-change properties, transforming into a fluid state upon heating to wet the scalp surface, and transforming into a solid or semi-solid state upon cooling to form a stable conductive contact. The central control unit includes a temperature control module, an electrical signal processing module, and a timing control module. The timing control module is configured to control the temperature control module and the electrical signal processing module to operate in a time-sharing manner. This invention achieves rapid and convenient wear and installation through an integrated temperature control structure, and supports independent control of a high-density multi-channel array through a centralized back-end control system architecture, enabling high-fidelity signal acquisition and coordinated electrical stimulation.

Provided is a novel display device having superior convenience, utility, or reliability. This display device comprises an insulating layer, a first light-emitting device, a second light-emitting device, and a structure. The structure has a support portion and an overhang. The support portion is positioned between the first light-emitting device and the second light-emitting device, and the overhang protrudes over the first light-emitting device. The first light-emitting device includes a first electrode, a second electrode, a first unit, and a first layer. The first layer is sandwiched between the first unit and the first electrode, and is formed of a material having hole-transporting properties. The first layer has a first region and a second region, and the second region is positioned at an end portion of the first layer and is close to the support portion. The first region is in contact with the first unit and the first electrode, and is formed of a material containing a high concentration of an electron accepting-material. As a result, it is possible to suppress a phenomenon in which a current flows between the second electrode and the first electrode via the first layer.

The embodiments of the present specification disclose a parking management device, the device comprising a battery replacement assembly and a camera assembly component; the battery replacement assembly comprises a battery compartment, a battery compartment fixing part and a battery compartment cover, and the camera assembly component comprises a camera clamping part, a camera external part and a locking part; the battery compartment fixing part is used to fix the battery compartment in the internal space of the parking management device; the battery compartment is used to accommodate the battery, and the battery compartment has a battery compartment opening and an internal electrode, the battery compartment opening is used for the battery to enter and exit the battery compartment, and the internal electrode is used to contact the electrode of the battery; the battery compartment cover is used to close the battery compartment opening; the camera clamping part has a connecting part and a clamping part, the connecting part is used to connect the base of the parking management device, and the clamping part is used to clamp the external part of a single camera; before being locked by the locking part, the external part clamped by the clamping part can move relative to the clamping part; the locking part is used to lock the single clamping part and prevent the external part clamped by the clamping part from moving relative to the clamping part.

Provided are a directional electrode and an implantable stimulation system. The directional electrode comprises: a wire main body (110), the wire main body (110) being provided with at least one set of directional electrode contacts (130); and a direction identifier (120), the direction identifier (120) being disposed on the wire main body (110) in the shape of an arc, the direction identifier (120) comprising a first identification arc (121) and a second identification arc (122), and a first notch (123) being arranged between the first identification arc (121) and the second identification arc (122).