Infrared light perfect absorber and preparation method thereof
An infrared light and absorber technology, applied in optics, instruments, filters, etc., can solve the problem of large area, low-cost preparation, inability to effectively expand electronic control or optoelectronic functional device platforms, and inability to achieve infrared broadband or infrared ultra-high Broadband light absorption and other issues, to achieve the effect of reducing cost requirements, easy large-area preparation, and simple structure
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Embodiment 1
[0034] figure 1 It is a schematic side view of an infrared light perfect absorber structure according to an embodiment of the present invention, figure 2 It is a schematic top view of the structure of an infrared light perfect absorber according to the embodiment of the present invention. Such as figure 1 and figure 2 As shown, the infrared light perfect absorber provided by the present invention includes a substrate 4, an opaque metal film layer 3 arranged on the substrate 4, and a colloidal crystal-metal thin film resonant film layer arranged on the metal film layer 3 structural layer. Wherein, the colloidal crystal-metal film resonance structure layer is composed of a plurality of identical colloidal crystal particles 2 and a metal film 1 deposited on the upper surface of each colloidal crystal particle 2 . The colloidal crystal particles 2 are evenly arranged on the metal film layer 3 , that is, the colloidal crystal-metal film resonance structure is a non-close-pack...
Embodiment 2
[0053] The substrate 4 of the infrared light perfect absorber provided by Embodiment 2 of the present invention is a silicon wafer, the metal material is gold, the thickness of the metal film layer 3 is 100 nm, the material of the colloidal crystal particles 2 is polystyrene, and the colloidal crystal particles 2 are engraved The diameters before and after etching are 1000 nm and 700 nm respectively, that is, the gap g between adjacent colloidal crystal particles 2 after etching is 300 nm. The metal thin film 1 in the colloidal crystal-metal thin film resonance structure layer is a gold film, and the thickness of the metal thin film 1 is 15nm.
[0054] Figure 4 It is the light absorption figure of the infrared light perfect absorber provided by the second embodiment of the present invention, such as Figure 4 As shown, it can be found from the spectrogram of the experimental test that the maximum absorption rate reaches 98% in the 1.541 micron band, and the absorption rate i...
Embodiment 3
[0056] The substrate 4 of the infrared light perfect absorber provided by Embodiment 3 of the present invention is glass, the metal material is gold, the thickness of the metal film layer 3 is 100nm, the material of the colloidal crystal particles 2 is polystyrene, and the colloidal crystal particles 2 are etched The front and rear diameters are 1000 nm and 600 nm respectively, that is, the gap g between adjacent colloidal crystal particles 2 after etching is 400 nm. The metal thin film 1 in the colloidal crystal-metal thin film resonance structure layer is a gold film, and the thickness of the metal thin film 1 is 15nm.
[0057] Figure 5 It is the light absorption figure of the infrared light perfect absorber provided by Embodiment 3 of the present invention, as Figure 5 As shown, it can be found from the spectrogram that the maximum absorption rate reaches 99% in the 1.258 micron band, and 99.9% in the 1.266 micron band. In addition, the absorbance in the spectral range ...
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