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422 results about "Terahertz radiation" patented technology

Terahertz radiation – also known as submillimeter radiation, terahertz waves, tremendously high frequency (THF), T-rays, T-waves, T-light, T-lux or THz – consists of electromagnetic waves within the ITU-designated band of frequencies from 0.1 to 30 terahertz (THz). One terahertz is 10¹² Hz or 1000 GHz. Wavelengths of radiation in the terahertz band correspondingly range from 1 mm to 0.1 mm (or 100 μm). Because terahertz radiation begins at a wavelength of one millimeter and proceeds into shorter wavelengths, it is sometimes known as the submillimeter band, and its radiation as submillimeter waves, especially in astronomy.

Direct detector for terahertz radiation

A direct detector for terahertz radiation comprises a grating-gated field-effect transistor with one or more quantum wells that provide a two-dimensional electron gas in the channel region. The grating gate can be a split-grating gate having at least one finger that can be individually biased. Biasing an individual finger of the split-grating gate to near pinch-off greatly increases the detector's resonant response magnitude over prior QW FET detectors while maintaining frequency selectivity. The split-grating-gated QW FET shows a tunable resonant plasmon response to FIR radiation that makes possible an electrically sweepable spectrometer-on-a-chip with no moving mechanical optical parts. Further, the narrow spectral response and signal-to-noise are adequate for use of the split-grating-gated QW FET in a passive, multispectral terahertz imaging system. The detector can be operated in a photoconductive or a photovoltaic mode. Other embodiments include uniform front and back gates to independently vary the carrier densities in the channel region, a thinned substrate to increase bolometric responsivity, and a resistive shunt to connect the fingers of the grating gate in parallel and provide a uniform gate-channel voltage along the length of the channel to increase the responsivity and improve the spectral resolution.
Owner:NAT TECH & ENG SOLUTIONS OF SANDIA LLC

Terahertz plane adsorbing material

The invention provides a terahertz plane adsorbing material, belonging to the technical field of electromagnetic function materials and relating to an electromagnetic-wave absorbing material. The terahertz plane adsorbing material comprises a substrate, a metal reflecting layer, a dielectric layer and an artificial electromagnetic medium layer; wherein, the metal reflecting layer is a continuous metal film and is arranged on the surface of the substrate; the dielectric layer is arranged between the metal reflecting layer and the artificial electromagnetic medium layer; the artificial electromagnetic medium layer is composed of artificial electromagnetic medium units which are arrayed periodically, each unit is a centro-symmetric figure formed by metal film lines with line width which is t and comprises two sing-opening metal rings which are connected backwards with long edges at two sides of an electric snap ring resonator. The terahertz plane adsorbing material provided by the invention has two strong-absorption frequency ranges, so as to provide selective adsorption and detection at different frequency ranges, and the terahertz radiation with wider spectral range can be adsorbed, so as to improve the performance and efficiency of the terahertz plane adsorbing material.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA

Graphene terahertz wave detector and manufacturing method thereof

The invention discloses a graphene terahertz wave detector. The graphene terahertz wave detector comprises a graphene field effect transistor and an antenna which can be effectively coupled to terahertz waves. The antenna is in integrated arrangement with the graphene field effect transistor yet is completely independent from the source electrode and the drain electrode of the graphene field effect transistor. According to the invention, through combination between a top grid and a back grid, the transport property of a graphene two-dimensional electron gas is effectively regulated and controlled, and accordingly, the terahertz waves are detected. The two sides of the top grid of the graphene field effect transistor are integrated with a plane antenna which is independent from the source electrode and the drain electrode and can be highly efficiently coupled to the terahertz waves, such that terahertz wave signals are coupled to a grid electrode in the form of capacitance, and the response of the graphene detector to terahertz radiation can be effectively enhanced. The detector can generate photoelectric currents or open-circuit voltages under radiation of the terahertz waves so as to realize room-temperature, high-speed, high-efficiency, high-sensitivity and low-noise detection.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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