Graphene terahertz wave detector and manufacturing method thereof

A graphene and terahertz technology, applied in the field of semiconductor terahertz optoelectronics, can solve the problems of narrow detection frequency range, low responsivity, high cost, and achieve the effect of low noise detection and enhanced response

Inactive Publication Date: 2015-09-16
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology

[0003] The purpose of the present invention is to provide a graphene terahertz wave detector and its manufacturing method to solve the technical problems of high cost, low responsivity, high equivalent noise power and narrow detection frequency range of terahertz wave detectors in the prior art.

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  • Graphene terahertz wave detector and manufacturing method thereof
  • Graphene terahertz wave detector and manufacturing method thereof

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Embodiment Construction

[0020] Graphene (Graphene) is the first real two-dimensional material used by human research. It consists of carbon atoms with sp2 hybrid orbitals to form a hexagonal planar film with a honeycomb lattice. Compared with traditional semiconductor materials, its two-dimensional electron gas has unique advantages such as high mobility and high stability. Graphene field-effect transistors have unique bipolarity, and electrons and holes in graphene can jointly participate in the response of terahertz waves under terahertz radiation.

[0021] The embodiment of the present invention discloses a graphene terahertz wave detector. The detector is based on a graphene field effect transistor. The detector also includes a planar antenna capable of effectively coupling terahertz waves. The planar antenna and the graphene field effect The transistor is integrated in the setup, but completely independent of the source and drain of the graphene field effect transistor.

[0022] The above-menti...

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Abstract

The invention discloses a graphene terahertz wave detector. The graphene terahertz wave detector comprises a graphene field effect transistor and an antenna which can be effectively coupled to terahertz waves. The antenna is in integrated arrangement with the graphene field effect transistor yet is completely independent from the source electrode and the drain electrode of the graphene field effect transistor. According to the invention, through combination between a top grid and a back grid, the transport property of a graphene two-dimensional electron gas is effectively regulated and controlled, and accordingly, the terahertz waves are detected. The two sides of the top grid of the graphene field effect transistor are integrated with a plane antenna which is independent from the source electrode and the drain electrode and can be highly efficiently coupled to the terahertz waves, such that terahertz wave signals are coupled to a grid electrode in the form of capacitance, and the response of the graphene detector to terahertz radiation can be effectively enhanced. The detector can generate photoelectric currents or open-circuit voltages under radiation of the terahertz waves so as to realize room-temperature, high-speed, high-efficiency, high-sensitivity and low-noise detection.

Description

technical field [0001] The application belongs to the field of semiconductor terahertz optoelectronic technology, and in particular relates to a graphene terahertz wave detector. Background technique [0002] Terahertz waves (THz) are electromagnetic waves with a frequency of 0.3 THz-30 THz, which lie between infrared waves and millimeter waves. Compared with traditional light sources, terahertz waves have excellent properties such as coherence, low energy, and strong penetrating power. It has important application prospects in electronics, new material research and radar communication. However, existing commercial terahertz wave detectors either have low sensitivity, high equivalent noise power, slow response speed, narrow detection frequency range, or are bulky, require low-temperature operation, and are expensive. Contents of the invention [0003] The object of the present invention is to provide a graphene terahertz wave detector and its manufacturing method, which ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/112H01L31/18G01J1/42
CPCY02P70/50
Inventor 杨昕昕孙建东秦华
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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