Friction electric field effect transistor

An electric field effect and transistor technology, applied in the field of flexible electronic devices, can solve the problems of no use method for electrostatic potential, and achieve the effects of easy miniaturization and arraying, large mechanical deformation, and wide external force sensing range

Active Publication Date: 2015-05-06
BEIJING INST OF NANOENERGY & NANOSYST
View PDF4 Cites 26 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, all these applications use the electrical signals output by the external circuit of the nanogenerator, and there is no good way to use the electrostatic potential formed between the friction surfaces.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Friction electric field effect transistor
  • Friction electric field effect transistor
  • Friction electric field effect transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040]In order to make the purpose, technical solutions and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with specific implementation methods and with reference to the accompanying drawings. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention. Secondly, the present invention is described in detail with reference to the schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the schematic diagrams are only examples, which should not limit the protection scope of the present invention.

[0041] The present invention combines the triboelectric effect with the fi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a friction electric field effect transistor, and belongs to the field of flexible electronic devices. A triboelectric effect and a semiconductor effect are combined; friction is produced by using external force; electrostatic potential is formed as a gate signal to realize adjustment and control over carrier transport characteristic in semiconductor. Mechanical effect stressed on the device can be converted into a local electronic control signal; a new method for adjusting and controlling the carrier transport characteristic in an electronic device by taking the electric potential produced by the friction effect as gate voltage. Different from the conventional field effect transistor, the electronic control signal is generated by the friction electric field transistor by using friction, the gate electrode in the conventional field effect transistor is substituted, direct interaction of the external force and the electronic device is realized, a wider external force sensing range is realized, and the transistor is widely applied to the fields such as human-computer interaction, sensors and flexible electronics.

Description

technical field [0001] The invention belongs to the field of flexible electronic devices, in particular to a triboelectric field effect transistor. Background technique [0002] The core technology of the field effect transistor is to control the current transport process in the element by using the gate voltage. Although field-effect transistor technology is very mature, in view of the three-terminal structure of the device unit, more complex integration methods are usually required, and pressure sensor devices made based on this type of technology lack a mechanism for direct interaction between the external environment and electronic devices. [0003] Nanogenerators are a research hotspot in recent years. Among them, the triboelectric generator utilizes the principles of triboelectricity and electrostatic induction, and two kinds of friction films coated with electrodes are bonded together to form a device. Under the action of external force, the device produces mechanica...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/40
CPCH01L29/41H01L29/78
Inventor 张弛唐伟张丽敏王中林
Owner BEIJING INST OF NANOENERGY & NANOSYST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products