Triboelectronic transistors and force and magnetic field sensors using them

Abstract

Triboelectronic transistors and force and magnetic field sensors using them, wherein the triboelectronic transistors include: field effect transistors, including: a base layer; a channel layer, located on the upper surface of the base layer; electrodes, located on the upper surface of the channel layer, including Independently distributed source and drain electrodes, part of which extends beyond the edge of the channel layer; an insulating friction layer, located on a part of the upper surface of the electrode and the uncovered upper surface of the channel layer; and a moving friction layer , located above the insulating friction layer, changes the contact / separation state with the insulating friction layer by moving. Through the change of the contact / separation state between the insulating friction layer and the moving friction layer, friction electrification generates an electrostatic potential to regulate the transport of carriers in the channel layer, and then control the magnitude of the current between the drain and source electrodes , thus effectively replacing the supply voltage of the gate electrode in conventional transistors.

Description

technical field [0001] The invention belongs to the field of triboelectronics, and more specifically relates to a triboelectronics transistor and a force and magnetic field sensor using the triboelectronics transistor. Background technique [0002] With the rapid development of electronic technology, the demand for electronic equipment continues to increase, and is developing in the direction of portability, transparency, flexibility, wearable and flexibility. Today's rapid development of the Internet of Things requires the close connection between the external environment and electronic products. Flexible electronic devices have attracted extensive attention in the fields of wearable electronic devices and human-computer interaction due to their special advantages. Flexible electronic devices based on field effect transistors can effectively realize human-computer interaction, and have great application prospects in the fields of wearable electronic devices, electronic skin...

AI Technical Summary

Problems solved by technology

However, traditional field-effect transistor-based electronic devices are usually triggered or activated by electrical signals, lacking an active dynamic interaction mechanism between the external environment and electronic devices

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