430 results about "Responsivity" patented technology

The invention discloses an unmanned aerial vehicle visual angle infrared light and visible light fusion target detection method, belongs to the technical field of target detection, and solves the problems that in the dual-light fusion target detection field in the prior art, the sensitivity to dislocation between modes is poor, the adaptability is poor when the mode resolutions are different, and the response rate to a small target is low. Comprising the following steps of 1, collecting infrared light and visible light image data sets of different scenes and different types, dividing the infrared light and visible light image data sets into a training set, a verification set and a test set, and performing registration of the data sets; 2, the backbone network is composed of residual modules, convolution and pooling operation is carried out on each stage of residual module, and feature maps of different scales are obtained through down-sampling; and step 3, attaching a self-attention module to the output of each level of residual module of the backbone network to extract the correlation of the features between the channels. According to the method, the residual network, the attention mechanism and the fusion module are combined, and the performance of dual-light fusion target detection is effectively improved.

The invention provides a weak light environment image contrast improvement method for a robot welding path, and relates to the field of image processing, and the method comprises the steps: firstly improving an original compression mode based on a brightness single factor through a contrast perception compression factor; secondly, a low-light image enhancement color space based on a polar coordinate structure is introduced, and a contrast perception compression factor is combined to construct a low-light image enhancement color space with a space decoupling capability; a welding path structure response diagram is constructed by fusing the direction consistency entropy and the direction responsivity, the sensitivity to the structural characteristics with directivity and coherence such as the welding path is enhanced, and the accuracy and robustness of structure extraction are improved; and finally, through combination of the robot welding path image after color enhancement and the welding path structure response diagram, background noise interference is effectively inhibited while welding edge details are highlighted, accurate enhancement of the welding path image is realized, the welding edge details are enhanced, and the definition and the structure continuity of the image are improved.

A spectrometer apparatus (110) and method of obtaining spectroscopy information about at least one object (112) are disclosed. The spectrometer device (110) comprises: at least one light source (114) for generating illumination light (116) for illuminating the object (112), the light source (114) comprising at least one light emitting diode (118) and at least one luminescent material (120) for converting primary light generated by the light emitting diode (118) into secondary light; ii. At least one broadband detector (128) for detecting detection light (130) within a spectral range at least partially comprising a spectral range of the primary light and the secondary light, the broadband detector (128) is configured to generate at least one primary detector signal upon detection of the detection light (130) within the spectral range of the primary light, where the broadband detector (128) is further configured to generate at least one secondary detector signal upon detection of the detection light (130) within the spectral range of the secondary light; and iii. At least one evaluation unit (136) for evaluating the primary detector signal and the secondary detector signal generated by the broadband detector (128), for determining responsivity information (137) about the broadband detector (128) from one of the primary detector signal or the secondary detector signal, and for deriving spectroscopy information about the object (112) from the other of the primary detector signal or the secondary detector signal by taking into account responsivity information (137) about the broadband detector (128).

The invention provides an organic electrochemical transistor regulated and controlled by a grating electrode and a preparation method of the organic electrochemical transistor, and belongs to the technical field of photoelectric detection and organic electrochemical transistors. The organic electrochemical transistor comprises a transparent substrate, a detector anode, a hole transport layer, a photosensitive layer, a semiconductor active layer, an electron transport layer, a detector cathode, a packaging layer, a transistor grid electrode, a transistor source electrode, a transistor drain electrode and an electrolyte. A QPD and an OECT are integrated above the transparent substrate. The invention also provides a preparation method of the organic electrochemical transistor. Through the illumination effect, the photo-generated voltage generated by the QPD serves as a grid regulation and control signal, and higher current variation for different illumination intensities is achieved. The preparation process is remarkably simplified, the responsivity, the detectivity and the linear dynamic range of the device are improved, the stability and the low power consumption characteristic are improved, and a new solution is provided for application of a photoelectric-electrochemical fusion device in the fields of flexible electronics, wearable detection, biosensing and the like.

The invention provides a silicon carbide single-photon detector and a preparation method thereof, and relates to the technical field of silicon carbide solar blind detection. The silicon carbide multiplication layer and the aluminum gallium nitrogen absorption layer of different material systems are sequentially grown on the silicon carbide substrate, and the side, far away from the silicon carbide substrate, of the aluminum gallium nitrogen absorption layer is the light incidence side, so that incident light firstly passes through the aluminum gallium nitrogen absorption layer and is excited to generate current carriers, and then the current carriers are multiplied by the multiplication layer to generate internal gain, so that the light emitting efficiency is improved. The detection sensitivity is improved. The forbidden bandwidth range of the aluminum gallium nitrogen absorption layer coincides with the photon energy range of the solar-blind wave band, so that the aluminum gallium nitrogen absorption layer only absorbs the solar-blind wave band and transmits the wave band outside the solar-blind wave band, absorption of photons outside the solar-blind wave band when a silicon carbide absorption layer is adopted is avoided, light filtering in a light filter mode is also avoided, and the detection responsivity is improved.

The invention relates to a photoelectric device for generating electric energy through conversion of ultraviolet light and near-infrared light, and discloses an ultraviolet photoelectric synapse / near-infrared photoelectric detection dual-mode photoelectric device. The dual-mode photoelectric device integrates dual functions of ultraviolet photoelectric synapse and near-infrared photoelectric detection: the ultraviolet photoelectric synapse function is realized based on a heterojunction formed by a single-layer graphene film and a wide bandgap perovskite Cs3Cu2I5 film, and B4PyMPM is doped in the Cs3Cu2I5 film to serve as an electron capture site, so that the electron capture capability is enhanced, and the photoelectric detection efficiency is improved. The performance of the ultraviolet photoelectric synapse device can be improved; a near-infrared photoelectric detection function is realized based on a heterojunction formed by a single-layer graphene thin film and n-type Ge, and the thickness of the Cs3Cu2I5 thin film is optimized, so that the Cs3Cu2I5 thin film becomes an antireflection layer of a 1550 nm near-infrared band, and the responsivity, the specific detection rate and other properties of a near-infrared photoelectric detection device are improved. The device disclosed by the invention is simple in structure and process, expensive instruments and equipment are avoided, and the preparation cost of the device is reduced.

The invention discloses a 2-micron wave band silicon-based germanium surface incidence type high-speed high-responsivity photoelectric detector, which comprises a p-type doped silicon layer 005, the upper surface of the p-type doped silicon layer 005 is provided with a germanium absorption region 006 and a cathode electrode 011, and the cathode electrode 011 surrounds the germanium absorption region 006; the middle part of the germanium absorption area 006 is provided with a porous resonant cavity array 009, the upper surface of the germanium absorption area 006 is provided with an anode electrode 012, and the anode electrode 012 surrounds the porous resonant cavity array 009. Through direct incidence, a 2-micron optical signal output by an external laser source is input into a germanium absorption region, the optical signal in the germanium absorption region is transversely propagated in the germanium absorption region due to a porous resonant cavity array structure, is finally limited and concentrated in the germanium absorption region, and generates two-photon absorption in the germanium absorption region to generate a free electron hole pair; oriented movement is carried out under external bias voltage loaded through the electrodes, and light current is formed.

The invention relates to a high-speed multi-channel optical receiving assembly, which relates to the technical field of optical transmission and comprises an optical fiber array, a waveguide type photoelectric detector, a trans-impedance amplifier and a connecting substrate, the optical fiber array serves as an optical input port and is used for receiving the multi-channel optical signals and transmitting the multi-channel optical signals to the waveguide type photoelectric detector; the waveguide type photoelectric detector is fixed on the surface of the connecting substrate and is used for converting an optical signal input by the optical fiber array into an electric signal; the light output end of the optical fiber array is directly coupled with the light input waveguide; the transimpedance amplifier is fixed on the surface of the connecting substrate, is connected with an electric signal output end of the waveguide type photoelectric detector through a transmission line, and is used for converting a current signal output by the photoelectric detector into a voltage signal; and the connecting substrate is used for realizing electric interconnection between the waveguide type photoelectric detector and the trans-impedance amplifier. According to the invention, channel expansion of the optical receiving assembly is facilitated, high-efficiency coupling of optical paths is realized, and large bandwidth and high responsivity are realized at the same time.

The invention relates to the technical field of semiconductor photoelectric device test and diagnosis, in particular to an infrared focal plane process diagnosis method based on machine learning, which comprises the following steps of: firstly, collecting photocurrent spectrum data of a plurality of pixel units on a focal plane array, and extracting a spectrum feature vector after preprocessing; secondly, a machine learning model is trained to obtain a performance prediction model, and key spectral features are obtained through feature importance evaluation; and finally, in combination with semiconductor physical simulation, establishing quantitative correlation between the key spectral characteristics and manufacturing process parameters, and completing diagnosis of production process links. The invention also comprises an optimization method. According to the method, spectral deep form information neglected by a conventional method is deeply mined and quantified, high-precision prediction of the response rate of each pixel of the whole focal plane array is realized by constructing characteristics closely related to a device microscopic physical mechanism, and correlation between spectral characteristics and process structure parameters is established, so that the accuracy of the device is improved. And the performance optimization and the process rapid iteration of the infrared detector chip are guided.

The invention discloses a MoTe2 / Bi < 0.5 > Sb < 1.5 > Te3 heterojunction thin film and application thereof in broadband near-infrared photoelectric detection. The heterojunction thin film is formed by stacking a MoTe2 thin film prepared by magnetron sputtering and a Bi < 0.5 > Sb < 1.5 > Te3 thin film prepared by magnetron sputtering, and the MoTe2 thin film and the Bi < 0.5 > Sb < 1.5 > Te3 thin film are in direct contact to form a heterojunction interface; the preparation method comprises the following steps: putting a cleaned n-Si substrate into a magnetron sputtering instrument, sputtering a MoTe2 film in an inert atmosphere, and carrying out annealing treatment to obtain n-Si / MoTe2; and continuously putting the n-Si / MoTe2 into the magnetron sputtering instrument, sputtering a Bi0. 5Sb1. 5Te3 film on the surface of the MoTe2 film in an inert atmosphere, and carrying out annealing treatment. According to the invention, a self-powered practical device with high responsivity, high specific detection rate, fast response speed and high stability can be obtained.

The invention provides a Ga2O3 / Bi2Te3 transverse heterojunction photoelectric detector and a preparation method thereof, and the method comprises the steps: S1, obtaining a Ga2O3 substrate, and carrying out the patterning, photoetching and etching of the Ga2O3 substrate, and obtaining a Ga2O3 active region; s2, depositing a SiO2 protective layer on the Ga2O3 active region, and patterning on the SiO2 protective layer to obtain an ion implantation region exposing the surface of the Ga2O3 active region; s3, single-side Si ion implantation is carried out on the Ga2O3 active region in the ion implantation region, and ion implantation activation annealing is carried out; s4, depositing a first metal electrode on the ion implantation region by using an EBV and stripping technology, and performing ohmic annealing on the first metal electrode; and S5, depositing a Bi2Te3 thin film on the other side, opposite to the ion implantation region, of the Ga2O3 active region by using a magnetron sputtering and stripping technology, and depositing a second metal electrode on Bi2Te3 by using an EBV and stripping technology to obtain the pn transverse heterojunction photoelectric detector with excellent performances such as high light responsivity, high light detection degree, low dark current and high response speed.

The invention discloses a polarization-sensitive narrow-band solar blind self-driven photoelectric detector and a preparation method thereof, and belongs to the technical field of semiconductor photoelectric devices. The detector comprises an n-type conductive single Ga2O3 micron wire, a p-type conductive GaN substrate, a PET substrate and a two-dimensional graphene film. According to the device, Ni / Au alloy is selected as a positive electrode, and a two-dimensional graphene film is used as a transparent window of ultraviolet solar blind light and a negative electrode of the device. By means of built-in potential formed by the n-Ga2O3 / p-GaN heterojunction and a Schottky barrier of Ga2O3 / Graphene, high-sensitivity detection of solar-blind ultraviolet light under the self-driving condition is achieved. The device has relatively high responsivity, specific detection rate and external quantum efficiency. The preparation method comprises the following steps: cleaning the GaN substrate, evaporating the Ni / Au electrode, adhering the PET substrate with the channel, transferring the Ga2O3 micron wire to form the heterojunction, and transferring and curing the graphene electrode. The device has the characteristics of polarization sensitivity and low power consumption, and can be applied to the fields of ultraviolet solar blind band encryption communication and environment monitoring.

The invention provides a photoelectric detection chip and a preparation method thereof, a photoelectric detector and electronic equipment, the photoelectric detection chip comprises a substrate, a first doping layer, a second doping layer, an intrinsic absorption layer, a micro-nano structure, a first electrode and a second electrode, the first doping layer is arranged on the surface of the substrate along the thickness direction of the substrate, and the second doping layer is arranged on the surface of the substrate; the intrinsic absorption layer is located between the first doping layer and the second doping layer, the multiple micro-nano structures are arranged in an array mode in the direction perpendicular to the thickness direction of the substrate, so that at least part of incident light is limited in the intrinsic absorption layer, the absorption efficiency of the intrinsic absorption layer on the incident light is improved, more electrons and holes can be generated conveniently, and the light emitting efficiency is improved. The responsivity of the photoelectric detection chip is improved; meanwhile, the micro-nano structure penetrates through the first doping layer, the intrinsic absorption layer and the second doping layer, so that electrons and holes move in the thickness direction, the transition distance and the transition time of the electrons and the holes are shortened, and the bandwidth of the photoelectric detection chip is improved.

The invention provides a radiation energy measurement method and system, and relates to the technical field of radiation measurement, and the method comprises the steps: generating a driving laser by using a laser, focusing the driving laser, irradiating the focused driving laser on a target material in a vacuum chamber, generating plasma, and emitting extreme ultraviolet radiation; acquiring a trigger signal by using a delay generator, and synchronously starting energy acquisition and spectrum detection according to a set time delay; collecting the extreme ultraviolet radiation through an energy measurement module to obtain first radiation energy data; meanwhile, acquiring extreme ultraviolet radiation spectrum data of the same pulse; calculating a spectrum correction factor based on the spectrum data, and correcting the responsivity coefficient of the energy measurement module in real time; and calculating radiation energy in a preset bandwidth range by using the corrected responsivity coefficient. According to the method, the responsivity of the energy meter can be dynamically corrected by combining the spectrum, and the accuracy and long-term stability of the result are ensured.

The invention discloses a photoelectric detection heterojunction, a photoelectric detection device and a preparation method and application thereof. The photoelectric detection heterojunction comprises a Van der Waals heterojunction formed by stacking a black phosphorus layer and a second-type Weel semimetal material layer. According to the technical scheme provided by the invention, the Van der Waals heterojunction photodetector based on black phosphorus-second class of Weel semimetal (BP-II WSM) is constructed, and the influence of parameters such as different types of II WSM materials, device structures, external electric fields, excitation light wavelengths and energy on device performances such as detection range, responsivity, response speed, quantum efficiency and detection rate is researched. The BP-II WSM Van der Waals heterojunction infrared photoelectric detector which has the excellent performance of giving consideration to broadband response, especially aiming at far infrared bands, being high in room temperature responsivity, high in response speed and the like is obtained.

The invention discloses a high-speed photoelectric detector based on a mixed surface plasma slit waveguide and a preparation method of the high-speed photoelectric detector, and belongs to the technical field of integrated optoelectronic devices. Comprising a substrate, a mixed surface plasma slit waveguide, metal gates on the two sides, a Van der Waals heterostructure and metal source and drain electrodes on the two sides. The Van der Waals heterojunction is composed of an upper hexagonal boron nitride layer, a lower hexagonal boron nitride layer and a middle two-dimensional material. According to the invention, the hexagonal boron nitride is used for packaging the two-dimensional material, so that the carrier mobility of the two-dimensional material can be improved, and the photoelectric response of the detector is enhanced; according to the invention, the distance between the metal gate and the optical waveguide is shortened, a transverse electric mode transmitted in the waveguide is regulated and controlled, a hybrid surface plasma slit mode with a strong local area is formed, the interaction between an optical field and a two-dimensional material layer is enhanced, and the responsivity of the detector is remarkably improved; the Fermi level of the two-dimensional material can be dynamically regulated and controlled by introducing the grid bias voltage, the photo-generated current separation efficiency is enhanced, and the responsivity and the signal-to-noise ratio of the detector can be improved.

The invention belongs to the technical field of semiconductor optoelectronic devices, and particularly relates to an optical computing array based on a reverse bias germanium modulator, which comprises a cross matrix formed by crossing a plurality of rows of mutually parallel input optical waveguides and a plurality of columns of mutually parallel output optical waveguides, a photoelectric detector is arranged at the output end of each row of output optical waveguides; a plurality of optical splitters; each germanium modulator corresponds to one crossed waveguide, and the first input end of each germanium modulator is connected with the output end of the optical splitter through a transmission optical waveguide; each light combiner is connected with the output end of the germanium modulator and the output optical waveguide, through the above structure, the computing array which has a thermal compensation mechanism, can reduce light reflection and is high in responsivity is comprehensively provided, and therefore under the condition that frequent switching is met, the computing array has the advantages that the computing efficiency is improved, and the computing efficiency is improved. And a low-power-consumption large-scale integrated calculation array scheme is realized.

An integrated semiconductor photodetector and its fabrication method are disclosed, relating to the field of integrated photodetector technology. This invention addresses the problems of existing detectors, such as limited functionality, insufficient responsivity, low integration, and difficulty in achieving synergistic miniaturization and high performance improvement. The method involves depositing a Cr conductive layer on the front side of a superlens substrate, uniformly coating the conductive layer surface with photoresist, pre-baking to prepare a dot-matrix mask pattern, developing and fixing followed by Ni deposition, and then stripping to obtain the Ni dot-matrix mask. ICP etching is used to remove the surface conductive layer, and a nanopillar array superlens structure is then fabricated. A photodetector layer is transferred to the back side of the substrate. Positive photoresist is spin-coated onto the substrate surface, pre-baking to prepare a source / drain electrode pattern, developing and fixing followed by sequential deposition of an adhesion layer metal and an electrode body metal layer. The metal layer in the non-electrode region is then stripped to obtain the metal electrode in contact with the photodetector layer, completing the detector fabrication. This invention can be applied to polarization imaging, space remote sensing, airborne detection, and optical communication.

The application relates to a dual-wavelength silicon-based PIN photoelectric sensor with ultralow dark current and high responsivity, which comprises a silicon substrate, a central P + anode region, high resistance / intrinsic silicon absorption region, bottom N + cathode region, junction termination extension region JTE, guard ring GRL, surface passivation layer and electrode structure. Through accurate regulation of the junction edge electric field, the application effectively suppresses the leakage current and early breakdown phenomenon caused by the high edge electric field in the plane PIN structure, realizes sub-nanoampere dark current output, and simultaneously, through synergistic optimization of the intrinsic region thickness and the doping distribution, the sensor obtains higher light responsivity at two typical wavelengths of 660 nm and 940 nm, and meets the requirements of short-wave shallow absorption and long-wave deep absorption.

The invention discloses a construction method of a graphene near-infrared detector with a GaAs substrate and the detector. Silvaco Tcad and Lumeral FDTD are used for constructing an equivalent structure model of the optical detector, and the optical performance and the electrical performance of the optical detector are analyzed; an optical detector equivalent structure model comprises a p-type graphene heterojunction and an n-type GaAs substrate, the graphene heterojunction is formed by stacking graphene, InSb and AlSb, and the thickness and doping concentration of each layer of the graphene heterojunction are accurately controlled to form a unique graphene heterojunction, so that the pn-type photoelectric detector with excellent optical response performance is constructed. According to the detector, generation of photon-generated carriers can be accelerated under the action of a built-in electric field, recombination is reduced, and the light responsivity of the detector is improved; meanwhile, hot electrons excited in the InSb dielectric layer can cross an interface barrier to be injected into the graphene, and rapid response is achieved through ballistic transport of the graphene.

The present invention relates to a method for processing and calibrating data of a circular variable filter spectroradiometer, including: receiving detector data sent in packets by the instrument end, splicing them to obtain complete detector data; correcting the collected original data to obtain detector data after drift correction; performing wavelength registration and then passing registration verification to obtain precisely registered spectral data; comparing the precisely registered spectral data with spectra at different temperature points recorded within the interval, and obtaining the responsivity function of the target to be measured through linear interpolation. The present invention proposes a drift correction method based on covariance cross-correlation and cyclic offset correction, and on the basis of CVF spectral calibration, uses the gas absorption method to re-register the wavelength after drift correction, solving the problem of spectral distortion caused by drift during the rotation of the CVF; the present invention can solve the non-linear response problem brought about by a large measurement temperature range and a wide working wavelength band, ensuring the accuracy of the measurement results of the instrument.

The invention discloses a multi-camera correction method and system and a medium, and the method comprises the steps: controlling a sampling condition, and analyzing the system gain of each camera; based on the ratio of the standard gain to the system gain, the correction coefficient of each camera is determined to correct each camera, so that the responsivity of each camera after correction is consistent; the method comprises the following steps of: extracting multiple frames of images acquired by the same camera, calculating a time domain noise value of each camera, determining a noise correction coefficient of each camera by adopting a ratio of a standard time domain noise value to the time domain noise value of each camera, and performing noise filtering on a gray value of each pixel point in the images acquired by the cameras according to the noise correction coefficient of each camera, therefore, the noise consistency adjustment of each camera is realized. According to the method, the effect that the noise level is consistent on the premise that the responsivity of the cameras is consistent is achieved, and the universality of the cameras of the same model or different models is improved.

A flexible near-infrared II region photodetector based on two-dimensional material nanoribbons relates to the technical field of optoelectronic devices, and solves the problems of poor flexibility and low responsivity of existing near-infrared II region photodetectors. It includes: a flexible substrate; an inorganic nanoribbon array disposed on the upper surface of the flexible substrate; a metal electrode disposed on the upper surface of the inorganic nanoribbon array; an organic modification layer connecting the inorganic nanoribbon array, and the near-infrared II region spectral absorption rate of the organic modification layer is not lower than that of methylene blue, porphyrin compounds or indocyanine green in the near-infrared II region. The preparation method is: preparing an inorganic nanoribbon array on the flexible substrate; preparing an organic modification layer on the inorganic nanoribbon array. The present invention improves the optoelectronic conversion efficiency of the device through the energy band distribution and coupling between two-dimensional organic and inorganic materials; improves the responsivity of the device in the near-infrared II region; can be attached to the surface of a living body for real-time detection of a moving living body.

The invention discloses a width gradient tungsten disulfide nanobelt, a preparation method thereof and an application of the width gradient tungsten disulfide nanobelt in a self-driven photoelectric detector, a Ni film is deposited on a substrate and is annealed to form catalytic particles, and a chemical vapor deposition system is utilized to accurately control the temperature gradient between tungsten trioxide in a central temperature zone and a growth substrate in a downstream temperature zone, so that the width gradient tungsten disulfide nanobelt is obtained. And the solid sulfur source is propelled at a constant rate, the dynamic change of the sulfur / tungsten atomic ratio in the reaction environment is regulated and controlled, and a growth mode is guided to be converted from a gas-liquid-solid mechanism to a gas-solid mechanism, so that controllable preparation of the tungsten disulfide nanobelt with the width continuously and progressively decreased in the axial direction is realized. The width of the nanobelt gradually changes from 150-500 nm to 50-120 nm, the length of the nanobelt reaches 3-12 [mu] m, and the nanobelt has an armchair edge and a 3R phase stacking structure. A self-driven photoelectric detector constructed based on the nanobelt realizes high-sensitivity detection of 532 nm laser under zero bias voltage, the responsivity reaches 5.04 A / W, the detectivity reaches 3.23 * 10 < 12 > Jones, and the nanobelt shows important application value in the fields of optical signal detection, optical switches and wireless optical communication.

The invention provides a photoelectric detector and a preparation method, and relates to the technical field of photoelectric detectors. The photoelectric detector comprises a silicon substrate, a functional layer, an electrode layer and an insulating layer, wherein the silicon substrate comprises an n-type silicon layer and a p-type silicon layer which are sequentially stacked from bottom to top. The functional layer is located above the silicon substrate and comprises a molybdenum disulfide layer and a zinc sulfide layer which are sequentially stacked from bottom to top. According to the technical scheme, the zinc sulfide layer is introduced on the molybdenum disulfide layer to form a MoS2-ZnS heterostructure, a wide forbidden band of ZnS complements a response blind area of MoS2 to ultraviolet light, and MoS2 covers visible and near-infrared light, so that a UV-NIR full spectrum is realized. A Type-I heterojunction is formed between MoS2-ZnS heterostructures, a built-in electric field effectively inhibits recombination of photon-generated carriers, the electron mobility is high, and the responsivity and the detection degree are improved. The MoS2-ZnS heterostructure based on the silicon substrate is easy to integrate with a CMOS (Complementary Metal Oxide Semiconductor), so that miniaturization and high integration of the device are realized.

The invention relates to the technical field of semiconductor photoelectric devices, and discloses a GeSe / Si heterojunction photoelectric device and a preparation method thereof, the GeSe / Si heterojunction photoelectric device comprises a bottom electrode, an n-type silicon substrate, a GeSe layer and a top electrode; wherein the n-type silicon substrate and the GeSe layer form a Van der Waals heterojunction, the whole GeSe / Si heterojunction photoelectric device is of a sandwich structure, the bottom electrode is in contact connection with the n-type silicon substrate, and the top electrode is in contact connection with the GeSe layer. The GeSe / Si Van der Waals heterojunction-based high-performance photoelectric device with a sandwich structure and an II-type energy band structure is designed and prepared, due to the light transmission of the Au / ITO top electrode, GeSe with a high light absorption coefficient is used as a light absorption layer, a large number of photon-generated carriers can be generated, and the photoelectric device can be applied to the field of photoelectric devices. A built-in electric field and an II-type energy band structure of the GeSe / Si heterojunction can quickly separate photon-generated carriers to form light current, so that high responsivity of 29.8 A / W, high quantum efficiency of 6959.7% and quick light response time of 8.5 / 23.7 us are realized.

The application discloses a PIN type back incidence germanium-silicon photodiode based on inductance peaking, and the photodiode structure sequentially comprises a back incidence area, an absorption area and a collection area from top to bottom; the back incidence area comprises a silicon substrate and silicon microlenses formed by etching on the back surface of the silicon substrate; the absorption area comprises a doped area and a germanium absorption layer, the built-in electric field is formed by P-type and N-type doping of the doped area, and the germanium absorption layer is used for absorbing incident photons and generating photo-generated carriers; the collection area comprises a self-alignment resistance layer, an interlayer dielectric layer, a coplanar waveguide electrode and a metal bump, and the geometric parameters of the coplanar waveguide electrode are optimized to introduce a compensation inductance L p The inductance peaking is realized, so that the bandwidth of the photodiode is optimized; the metal bump is arranged on the surface of the coplanar waveguide electrode to realize flip-chip bonding of the photodiode and an external circuit. p The bandwidth of the device can be significantly improved under the premise of ensuring high responsivity and low dark current.

The invention discloses a p-type tungsten disulfide nanotube bundle, a preparation method thereof and application of the p-type tungsten disulfide nanotube bundle in a photoelectric detector with adjustable light response linearity, and the method comprises the following steps: depositing an Au film on a SiO2 / Si substrate, and carrying out annealing to form a zero-dimensional Au nanoparticle catalytic layer; the method comprises the following steps: respectively placing tungsten trioxide (WO3) powder and sulfur (S) powder in different areas of a single-temperature-area tubular furnace, heating to 850-1000 DEG C in an Ar / H2 mixed gas low-pressure atmosphere, and reacting to generate a WS2 nanotube bundle with a multi-wall hollow structure; the obtained material has a cluster-shaped morphology in dense interlaced distribution, and shows stable p-type conductive characteristics. A photoelectric detector prepared based on the material has high responsivity (2.7 * 10 < 4 > A / W), high detection rate (1.6 * 10 < 13 > Jones) and quick response (15 ms) in a wave band of 375-1550 nm, and keeps stable performance in a range of 10-300 K. The method is simple in process, the growth process of the tungsten disulfide nanotube bundle can be accurately controlled, the polarity of tungsten disulfide is changed to be p-type, and large-scale preparation can be achieved.

The invention discloses a p < + >-NiO / p--NiO / GaN vertical structure photovoltaic detector based on an II type energy band. The structure comprises an n-GaN substrate, an i-GaN absorption layer located above the substrate, a p-NiO layer and a p +-NiO ohmic contact layer which are located above the absorption layer, and an AlN window layer, an anode electrode and a cathode electrode which are arranged on the i-GaN. The anode electrode is located on the side, away from the i-GaN layer, of the p-NiO layer, and the cathode electrode is located on the side, away from the i-GaN layer, of the n-GaN substrate layer. The invention also discloses a preparation method. The device provided by the invention has a self-powered capability, the responsivity of the device can be effectively improved through the design of an II-type energy band, light directly enters the absorption layer through the AlN wide-band-gap window layer, and the short-wavelength absorption loss is reduced.

The application discloses a thermoelectric pile structure for calibrating a far ultraviolet ultraviolet detector based on MEMS, which comprises a silicon substrate, a support layer, an absorption layer, a thermocouple pair, aluminum wires, aluminum electrodes and a single crystal silicon material structure on the silicon substrate. The double-layer thermocouple stacking structure is adopted to improve the device duty ratio, more thermocouple pairs can be laid in the case of keeping the size of the one-layer structure unchanged, and the response rate of the detector is improved. The circular structure conforms to the distribution trend that the temperature is radially diffused from the center of the absorption layer to the periphery in a decreasing manner, the hot end of the thermocouple pair can be closer to the area with higher temperature, the temperature of the hot end of the thermocouple pair is more uniform, and the response rate of the detector is improved. The radiant energy of the far ultraviolet ultraviolet radiation source is converted into an output thermoelectric electromotive force, a mathematical model of Fourier's law and the Seebeck effect is established for calculation, and the heat flux density of the far ultraviolet ultraviolet radiation source is measured.