300 results about "Responsivity" patented technology

A spectrometer apparatus (110) and method of obtaining spectroscopy information about at least one object (112) are disclosed. The spectrometer device (110) comprises: at least one light source (114) for generating illumination light (116) for illuminating the object (112), the light source (114) comprising at least one light emitting diode (118) and at least one luminescent material (120) for converting primary light generated by the light emitting diode (118) into secondary light; ii. At least one broadband detector (128) for detecting detection light (130) within a spectral range at least partially comprising a spectral range of the primary light and the secondary light, the broadband detector (128) is configured to generate at least one primary detector signal upon detection of the detection light (130) within the spectral range of the primary light, where the broadband detector (128) is further configured to generate at least one secondary detector signal upon detection of the detection light (130) within the spectral range of the secondary light; and iii. At least one evaluation unit (136) for evaluating the primary detector signal and the secondary detector signal generated by the broadband detector (128), for determining responsivity information (137) about the broadband detector (128) from one of the primary detector signal or the secondary detector signal, and for deriving spectroscopy information about the object (112) from the other of the primary detector signal or the secondary detector signal by taking into account responsivity information (137) about the broadband detector (128).

The invention provides an organic electrochemical transistor regulated and controlled by a grating electrode and a preparation method of the organic electrochemical transistor, and belongs to the technical field of photoelectric detection and organic electrochemical transistors. The organic electrochemical transistor comprises a transparent substrate, a detector anode, a hole transport layer, a photosensitive layer, a semiconductor active layer, an electron transport layer, a detector cathode, a packaging layer, a transistor grid electrode, a transistor source electrode, a transistor drain electrode and an electrolyte. A QPD and an OECT are integrated above the transparent substrate. The invention also provides a preparation method of the organic electrochemical transistor. Through the illumination effect, the photo-generated voltage generated by the QPD serves as a grid regulation and control signal, and higher current variation for different illumination intensities is achieved. The preparation process is remarkably simplified, the responsivity, the detectivity and the linear dynamic range of the device are improved, the stability and the low power consumption characteristic are improved, and a new solution is provided for application of a photoelectric-electrochemical fusion device in the fields of flexible electronics, wearable detection, biosensing and the like.

The invention provides a silicon carbide single-photon detector and a preparation method thereof, and relates to the technical field of silicon carbide solar blind detection. The silicon carbide multiplication layer and the aluminum gallium nitrogen absorption layer of different material systems are sequentially grown on the silicon carbide substrate, and the side, far away from the silicon carbide substrate, of the aluminum gallium nitrogen absorption layer is the light incidence side, so that incident light firstly passes through the aluminum gallium nitrogen absorption layer and is excited to generate current carriers, and then the current carriers are multiplied by the multiplication layer to generate internal gain, so that the light emitting efficiency is improved. The detection sensitivity is improved. The forbidden bandwidth range of the aluminum gallium nitrogen absorption layer coincides with the photon energy range of the solar-blind wave band, so that the aluminum gallium nitrogen absorption layer only absorbs the solar-blind wave band and transmits the wave band outside the solar-blind wave band, absorption of photons outside the solar-blind wave band when a silicon carbide absorption layer is adopted is avoided, light filtering in a light filter mode is also avoided, and the detection responsivity is improved.

The invention relates to the technical field of semiconductor photoelectric device test and diagnosis, in particular to an infrared focal plane process diagnosis method based on machine learning, which comprises the following steps of: firstly, collecting photocurrent spectrum data of a plurality of pixel units on a focal plane array, and extracting a spectrum feature vector after preprocessing; secondly, a machine learning model is trained to obtain a performance prediction model, and key spectral features are obtained through feature importance evaluation; and finally, in combination with semiconductor physical simulation, establishing quantitative correlation between the key spectral characteristics and manufacturing process parameters, and completing diagnosis of production process links. The invention also comprises an optimization method. According to the method, spectral deep form information neglected by a conventional method is deeply mined and quantified, high-precision prediction of the response rate of each pixel of the whole focal plane array is realized by constructing characteristics closely related to a device microscopic physical mechanism, and correlation between spectral characteristics and process structure parameters is established, so that the accuracy of the device is improved. And the performance optimization and the process rapid iteration of the infrared detector chip are guided.

The invention discloses a MoTe2 / Bi < 0.5 > Sb < 1.5 > Te3 heterojunction thin film and application thereof in broadband near-infrared photoelectric detection. The heterojunction thin film is formed by stacking a MoTe2 thin film prepared by magnetron sputtering and a Bi < 0.5 > Sb < 1.5 > Te3 thin film prepared by magnetron sputtering, and the MoTe2 thin film and the Bi < 0.5 > Sb < 1.5 > Te3 thin film are in direct contact to form a heterojunction interface; the preparation method comprises the following steps: putting a cleaned n-Si substrate into a magnetron sputtering instrument, sputtering a MoTe2 film in an inert atmosphere, and carrying out annealing treatment to obtain n-Si / MoTe2; and continuously putting the n-Si / MoTe2 into the magnetron sputtering instrument, sputtering a Bi0. 5Sb1. 5Te3 film on the surface of the MoTe2 film in an inert atmosphere, and carrying out annealing treatment. According to the invention, a self-powered practical device with high responsivity, high specific detection rate, fast response speed and high stability can be obtained.

The invention provides a photoelectric detection chip and a preparation method thereof, a photoelectric detector and electronic equipment, the photoelectric detection chip comprises a substrate, a first doping layer, a second doping layer, an intrinsic absorption layer, a micro-nano structure, a first electrode and a second electrode, the first doping layer is arranged on the surface of the substrate along the thickness direction of the substrate, and the second doping layer is arranged on the surface of the substrate; the intrinsic absorption layer is located between the first doping layer and the second doping layer, the multiple micro-nano structures are arranged in an array mode in the direction perpendicular to the thickness direction of the substrate, so that at least part of incident light is limited in the intrinsic absorption layer, the absorption efficiency of the intrinsic absorption layer on the incident light is improved, more electrons and holes can be generated conveniently, and the light emitting efficiency is improved. The responsivity of the photoelectric detection chip is improved; meanwhile, the micro-nano structure penetrates through the first doping layer, the intrinsic absorption layer and the second doping layer, so that electrons and holes move in the thickness direction, the transition distance and the transition time of the electrons and the holes are shortened, and the bandwidth of the photoelectric detection chip is improved.

The invention provides a radiation energy measurement method and system, and relates to the technical field of radiation measurement, and the method comprises the steps: generating a driving laser by using a laser, focusing the driving laser, irradiating the focused driving laser on a target material in a vacuum chamber, generating plasma, and emitting extreme ultraviolet radiation; acquiring a trigger signal by using a delay generator, and synchronously starting energy acquisition and spectrum detection according to a set time delay; collecting the extreme ultraviolet radiation through an energy measurement module to obtain first radiation energy data; meanwhile, acquiring extreme ultraviolet radiation spectrum data of the same pulse; calculating a spectrum correction factor based on the spectrum data, and correcting the responsivity coefficient of the energy measurement module in real time; and calculating radiation energy in a preset bandwidth range by using the corrected responsivity coefficient. According to the method, the responsivity of the energy meter can be dynamically corrected by combining the spectrum, and the accuracy and long-term stability of the result are ensured.

The invention discloses a photoelectric detection heterojunction, a photoelectric detection device and a preparation method and application thereof. The photoelectric detection heterojunction comprises a Van der Waals heterojunction formed by stacking a black phosphorus layer and a second-type Weel semimetal material layer. According to the technical scheme provided by the invention, the Van der Waals heterojunction photodetector based on black phosphorus-second class of Weel semimetal (BP-II WSM) is constructed, and the influence of parameters such as different types of II WSM materials, device structures, external electric fields, excitation light wavelengths and energy on device performances such as detection range, responsivity, response speed, quantum efficiency and detection rate is researched. The BP-II WSM Van der Waals heterojunction infrared photoelectric detector which has the excellent performance of giving consideration to broadband response, especially aiming at far infrared bands, being high in room temperature responsivity, high in response speed and the like is obtained.

The invention belongs to the technical field of semiconductor optoelectronic devices, and particularly relates to an optical computing array based on a reverse bias germanium modulator, which comprises a cross matrix formed by crossing a plurality of rows of mutually parallel input optical waveguides and a plurality of columns of mutually parallel output optical waveguides, a photoelectric detector is arranged at the output end of each row of output optical waveguides; a plurality of optical splitters; each germanium modulator corresponds to one crossed waveguide, and the first input end of each germanium modulator is connected with the output end of the optical splitter through a transmission optical waveguide; each light combiner is connected with the output end of the germanium modulator and the output optical waveguide, through the above structure, the computing array which has a thermal compensation mechanism, can reduce light reflection and is high in responsivity is comprehensively provided, and therefore under the condition that frequent switching is met, the computing array has the advantages that the computing efficiency is improved, and the computing efficiency is improved. And a low-power-consumption large-scale integrated calculation array scheme is realized.

An integrated semiconductor photodetector and its fabrication method are disclosed, relating to the field of integrated photodetector technology. This invention addresses the problems of existing detectors, such as limited functionality, insufficient responsivity, low integration, and difficulty in achieving synergistic miniaturization and high performance improvement. The method involves depositing a Cr conductive layer on the front side of a superlens substrate, uniformly coating the conductive layer surface with photoresist, pre-baking to prepare a dot-matrix mask pattern, developing and fixing followed by Ni deposition, and then stripping to obtain the Ni dot-matrix mask. ICP etching is used to remove the surface conductive layer, and a nanopillar array superlens structure is then fabricated. A photodetector layer is transferred to the back side of the substrate. Positive photoresist is spin-coated onto the substrate surface, pre-baking to prepare a source / drain electrode pattern, developing and fixing followed by sequential deposition of an adhesion layer metal and an electrode body metal layer. The metal layer in the non-electrode region is then stripped to obtain the metal electrode in contact with the photodetector layer, completing the detector fabrication. This invention can be applied to polarization imaging, space remote sensing, airborne detection, and optical communication.

The application relates to a dual-wavelength silicon-based PIN photoelectric sensor with ultralow dark current and high responsivity, which comprises a silicon substrate, a central P + anode region, high resistance / intrinsic silicon absorption region, bottom N + cathode region, junction termination extension region JTE, guard ring GRL, surface passivation layer and electrode structure. Through accurate regulation of the junction edge electric field, the application effectively suppresses the leakage current and early breakdown phenomenon caused by the high edge electric field in the plane PIN structure, realizes sub-nanoampere dark current output, and simultaneously, through synergistic optimization of the intrinsic region thickness and the doping distribution, the sensor obtains higher light responsivity at two typical wavelengths of 660 nm and 940 nm, and meets the requirements of short-wave shallow absorption and long-wave deep absorption.

The invention discloses a multi-camera correction method and system and a medium, and the method comprises the steps: controlling a sampling condition, and analyzing the system gain of each camera; based on the ratio of the standard gain to the system gain, the correction coefficient of each camera is determined to correct each camera, so that the responsivity of each camera after correction is consistent; the method comprises the following steps of: extracting multiple frames of images acquired by the same camera, calculating a time domain noise value of each camera, determining a noise correction coefficient of each camera by adopting a ratio of a standard time domain noise value to the time domain noise value of each camera, and performing noise filtering on a gray value of each pixel point in the images acquired by the cameras according to the noise correction coefficient of each camera, therefore, the noise consistency adjustment of each camera is realized. According to the method, the effect that the noise level is consistent on the premise that the responsivity of the cameras is consistent is achieved, and the universality of the cameras of the same model or different models is improved.

The invention discloses a width gradient tungsten disulfide nanobelt, a preparation method thereof and an application of the width gradient tungsten disulfide nanobelt in a self-driven photoelectric detector, a Ni film is deposited on a substrate and is annealed to form catalytic particles, and a chemical vapor deposition system is utilized to accurately control the temperature gradient between tungsten trioxide in a central temperature zone and a growth substrate in a downstream temperature zone, so that the width gradient tungsten disulfide nanobelt is obtained. And the solid sulfur source is propelled at a constant rate, the dynamic change of the sulfur / tungsten atomic ratio in the reaction environment is regulated and controlled, and a growth mode is guided to be converted from a gas-liquid-solid mechanism to a gas-solid mechanism, so that controllable preparation of the tungsten disulfide nanobelt with the width continuously and progressively decreased in the axial direction is realized. The width of the nanobelt gradually changes from 150-500 nm to 50-120 nm, the length of the nanobelt reaches 3-12 [mu] m, and the nanobelt has an armchair edge and a 3R phase stacking structure. A self-driven photoelectric detector constructed based on the nanobelt realizes high-sensitivity detection of 532 nm laser under zero bias voltage, the responsivity reaches 5.04 A / W, the detectivity reaches 3.23 * 10 < 12 > Jones, and the nanobelt shows important application value in the fields of optical signal detection, optical switches and wireless optical communication.

The invention provides a photoelectric detector and a preparation method, and relates to the technical field of photoelectric detectors. The photoelectric detector comprises a silicon substrate, a functional layer, an electrode layer and an insulating layer, wherein the silicon substrate comprises an n-type silicon layer and a p-type silicon layer which are sequentially stacked from bottom to top. The functional layer is located above the silicon substrate and comprises a molybdenum disulfide layer and a zinc sulfide layer which are sequentially stacked from bottom to top. According to the technical scheme, the zinc sulfide layer is introduced on the molybdenum disulfide layer to form a MoS2-ZnS heterostructure, a wide forbidden band of ZnS complements a response blind area of MoS2 to ultraviolet light, and MoS2 covers visible and near-infrared light, so that a UV-NIR full spectrum is realized. A Type-I heterojunction is formed between MoS2-ZnS heterostructures, a built-in electric field effectively inhibits recombination of photon-generated carriers, the electron mobility is high, and the responsivity and the detection degree are improved. The MoS2-ZnS heterostructure based on the silicon substrate is easy to integrate with a CMOS (Complementary Metal Oxide Semiconductor), so that miniaturization and high integration of the device are realized.

The invention relates to the technical field of semiconductor photoelectric devices, and discloses a GeSe / Si heterojunction photoelectric device and a preparation method thereof, the GeSe / Si heterojunction photoelectric device comprises a bottom electrode, an n-type silicon substrate, a GeSe layer and a top electrode; wherein the n-type silicon substrate and the GeSe layer form a Van der Waals heterojunction, the whole GeSe / Si heterojunction photoelectric device is of a sandwich structure, the bottom electrode is in contact connection with the n-type silicon substrate, and the top electrode is in contact connection with the GeSe layer. The GeSe / Si Van der Waals heterojunction-based high-performance photoelectric device with a sandwich structure and an II-type energy band structure is designed and prepared, due to the light transmission of the Au / ITO top electrode, GeSe with a high light absorption coefficient is used as a light absorption layer, a large number of photon-generated carriers can be generated, and the photoelectric device can be applied to the field of photoelectric devices. A built-in electric field and an II-type energy band structure of the GeSe / Si heterojunction can quickly separate photon-generated carriers to form light current, so that high responsivity of 29.8 A / W, high quantum efficiency of 6959.7% and quick light response time of 8.5 / 23.7 us are realized.

The application discloses a PIN type back incidence germanium-silicon photodiode based on inductance peaking, and the photodiode structure sequentially comprises a back incidence area, an absorption area and a collection area from top to bottom; the back incidence area comprises a silicon substrate and silicon microlenses formed by etching on the back surface of the silicon substrate; the absorption area comprises a doped area and a germanium absorption layer, the built-in electric field is formed by P-type and N-type doping of the doped area, and the germanium absorption layer is used for absorbing incident photons and generating photo-generated carriers; the collection area comprises a self-alignment resistance layer, an interlayer dielectric layer, a coplanar waveguide electrode and a metal bump, and the geometric parameters of the coplanar waveguide electrode are optimized to introduce a compensation inductance L p The inductance peaking is realized, so that the bandwidth of the photodiode is optimized; the metal bump is arranged on the surface of the coplanar waveguide electrode to realize flip-chip bonding of the photodiode and an external circuit. p The bandwidth of the device can be significantly improved under the premise of ensuring high responsivity and low dark current.

The invention discloses a p-type tungsten disulfide nanotube bundle, a preparation method thereof and application of the p-type tungsten disulfide nanotube bundle in a photoelectric detector with adjustable light response linearity, and the method comprises the following steps: depositing an Au film on a SiO2 / Si substrate, and carrying out annealing to form a zero-dimensional Au nanoparticle catalytic layer; the method comprises the following steps: respectively placing tungsten trioxide (WO3) powder and sulfur (S) powder in different areas of a single-temperature-area tubular furnace, heating to 850-1000 DEG C in an Ar / H2 mixed gas low-pressure atmosphere, and reacting to generate a WS2 nanotube bundle with a multi-wall hollow structure; the obtained material has a cluster-shaped morphology in dense interlaced distribution, and shows stable p-type conductive characteristics. A photoelectric detector prepared based on the material has high responsivity (2.7 * 10 < 4 > A / W), high detection rate (1.6 * 10 < 13 > Jones) and quick response (15 ms) in a wave band of 375-1550 nm, and keeps stable performance in a range of 10-300 K. The method is simple in process, the growth process of the tungsten disulfide nanotube bundle can be accurately controlled, the polarity of tungsten disulfide is changed to be p-type, and large-scale preparation can be achieved.

The invention discloses a p < + >-NiO / p--NiO / GaN vertical structure photovoltaic detector based on an II type energy band. The structure comprises an n-GaN substrate, an i-GaN absorption layer located above the substrate, a p-NiO layer and a p +-NiO ohmic contact layer which are located above the absorption layer, and an AlN window layer, an anode electrode and a cathode electrode which are arranged on the i-GaN. The anode electrode is located on the side, away from the i-GaN layer, of the p-NiO layer, and the cathode electrode is located on the side, away from the i-GaN layer, of the n-GaN substrate layer. The invention also discloses a preparation method. The device provided by the invention has a self-powered capability, the responsivity of the device can be effectively improved through the design of an II-type energy band, light directly enters the absorption layer through the AlN wide-band-gap window layer, and the short-wavelength absorption loss is reduced.

The application discloses a thermoelectric pile structure for calibrating a far ultraviolet ultraviolet detector based on MEMS, which comprises a silicon substrate, a support layer, an absorption layer, a thermocouple pair, aluminum wires, aluminum electrodes and a single crystal silicon material structure on the silicon substrate. The double-layer thermocouple stacking structure is adopted to improve the device duty ratio, more thermocouple pairs can be laid in the case of keeping the size of the one-layer structure unchanged, and the response rate of the detector is improved. The circular structure conforms to the distribution trend that the temperature is radially diffused from the center of the absorption layer to the periphery in a decreasing manner, the hot end of the thermocouple pair can be closer to the area with higher temperature, the temperature of the hot end of the thermocouple pair is more uniform, and the response rate of the detector is improved. The radiant energy of the far ultraviolet ultraviolet radiation source is converted into an output thermoelectric electromotive force, a mathematical model of Fourier's law and the Seebeck effect is established for calculation, and the heat flux density of the far ultraviolet ultraviolet radiation source is measured.

The application belongs to the technical field of photoelectric detectors, and discloses a high-performance two-dimensional perovskite photoelectric detector and a preparation method thereof. First, a SiO2 glass substrate is cleaned, and a precursor solution is dropped on the surface of the glass substrate. Chloroform antisolvent solution doped with ZnO quantum dots is dropped on the precursor solution. Then, ZnO quantum dots / (PEA)2PbI4 nanosheet thin film is formed by spin coating, and the thin film is annealed. The above steps are repeated multiple times to obtain a uniform thin film. The glass substrate with the uniform thin film is plated with gold by a vacuum evaporation method to obtain an electrode. The application improves the carrier migration rate by doping the concentration of ZnO quantum dots, improves the photocurrent size, obtains higher responsivity and detection rate, and shorter response time. The manufacturing process is simple and has strong repeatability. The application has high photocurrent size, high responsivity and high detection sensitivity. The application selects a suitable concentration of ZnO quantum dots. The application can be prepared in an air environment and has strong stability.

The application discloses a kind of laser semi-active seeker testing system and method, system includes: optical platform, laser target simulation unit, seeker fixed seat, three-axis turntable and stepper motor etc.Modular.The laser target simulation unit is used to simulate the real echo signal generated after laser irradiation to target;The seeker fixed seat is installed on three-axis turntable, three-axis turntable is installed on optical platform and is driven by stepper motor.Laser target simulation unit, laser semi-active seeker and stepper motor are respectively connected with host computer communication.The application is applicable to miniature laser semi-active seeker, and can test the working distance, field angle, responsivity and multiple performance parameters of miniature laser semi-active seeker synchronously.

The invention relates to the technical field of semiconductors, and provides a GaN-based gradient doped extreme ultraviolet detector and a preparation method thereof. The GaN-based gradient doping extreme ultraviolet detector comprises a substrate, a GaN buffer layer, an n-GaN layer, an i-GaN layer, an n-type electrode, a gradient doping p-GaN layer and a p-type electrode, and the doping concentration of the gradient doping p-GaN layer is gradually reduced in the direction from the surface, close to the p-type electrode, of the gradient doping p-GaN layer to the surface, away from the p-type electrode, of the gradient doping p-GaN layer; according to the GaN-based gradient doping extreme ultraviolet detector, a surface electric field can be induced by utilizing the gradient doping p-GaN layer, and the electric field can drive photon-excited electron-hole pair separation, so that the surface carrier collection capability of an EUV wave band is remarkably improved; the surface electric field formed by the gradient doping p-GaN layer is utilized, the light current and the responsivity of the detector are improved, and the structure has a wide application prospect in the extreme ultraviolet GaN-based detector.

The present application relates to a kind of three-dimensional sea urchin-like Bi2S3 / Bi2O2S or ZnO / Bi2O2S heterojunction and its preparation method and application in photoelectric detector, the Bi2S3 / Bi2O2S heterojunction is made of Bi2S3 Nanorod and Bi2O2S nanoflower, the ZnO / Bi2O2S heterojunction is made of ZnO Nanorod and Bi2O2S nanoflower;The Bi2O2S nanoflower is made of ultrathin Bi2O2S nanosheet, Bi2O2S nanoflower is uniformly grown on substrate;Bi2S3 Nanorod is grown on the surface of ultrathin Bi2O2S nanosheet constituting Bi2O2S nanoflower;ZnO Nanorod is grown on the surface of ultrathin Bi2O2S nanosheet constituting Bi2O2S nanoflower;The Bi2S3 / Bi2O2S heterojunction or ZnO / Bi2O2S heterojunction as a whole presents three-dimensional sea urchin-like structure.The method of the present application can effectively promote the carrier separation of Bi2O2S, improve the sensitivity, responsivity of photoelectric detector.Simultaneously, one-dimensional Bi2S3 Nanorod or ZnO Nanorod is grown on the surface of Bi2O2S, forms three-dimensional sea urchin-like Bi2S3 / Bi2O2S heterojunction, or ZnO / Bi2O2S heterojunction, light is reflected and absorbed on the surface of material multiple times, improves the light absorption utilization rate, further improves the detection performance of photoelectric detector.

The invention discloses a manufacturing method of a high-power photovoltaic module, and aims to solve the technical problems that specular reflection on the lower surface of glass of an existing crystalline silicon photovoltaic module causes light loss, the utilization rate of ultraviolet light is low, and aging of a packaging adhesive film is easily accelerated. The method comprises the following steps: firstly, carrying out hydrofluoric acid etching or micron-order fusion embossing treatment on the lower surface of photovoltaic front glass to form a concave-convex light trapping structure so as to reduce mirror reflection of incident light; the upper surface of the glass is coated with a polyfluorene down-conversion material layer with the thickness of 50-100 nm, and ultraviolet light is converted into high-responsivity blue light. Subsequent procedures of cell scribing, multi-main-grid series welding, POE adhesive film lamination, EL and appearance detection, vacuum lamination, trimming and framing and the like are carried out to complete assembly preparation. Tests show that in a 66-version assembly, only the lower surface of the glass is treated, so that the power can be improved by 2.1 W compared with that of a traditional process, the power is improved by 5.8 W after the lower conversion film layer is overlaid, meanwhile, the aging effect of ultraviolet light on the adhesive film is weakened, the service life of the assembly is prolonged, and the process is compatible with an existing production line and has remarkable industrial application value.

This invention provides a cavity-enhanced germanium-silicon photodetector based on silicon corner mirrors, comprising a silicon substrate layer, a germanium absorption region on the silicon substrate layer, and silicon corner mirrors located on the front and rear sides of the germanium absorption region; a germanium via layer is provided above the germanium absorption region, the via layer having a plurality of germanium vias, and a signal electrode is provided at the top of the germanium via layer; silicon via layers are provided on the left and right sides of the germanium absorption region, the silicon via layers having a plurality of silicon vias, and a ground electrode is provided at the top of the silicon via layers; two silicon nitride waveguides are arranged opposite each other, extending from the opposite outer sides of the two silicon via layers toward the sides of the germanium absorption region. The technical solution of this invention has excellent high-power processing capability, achieves polarization-insensitive detection, effectively overcomes the contradiction between responsivity and bandwidth, is fully compatible with CMOS manufacturing processes, and is conducive to large-scale integration and mass production.

This invention discloses a high-performance tin-based perovskite photodetector, its fabrication method, and its application in covert optical information transmission. The photodetector sequentially comprises a conductive substrate, an electron transport layer, a tin-based perovskite layer, a hole transport layer, and a metal electrode layer. The tin-based perovskite layer is FASnI3, and 1,4-butanediamine hydroiodate is introduced as a molecular additive to suppress Sn. 2+ Oxidation and reduction of defect state density optimize film quality. Based on this, FASnI3 perovskite films with an inverse opal structure were successfully prepared. The slow photon effect significantly enhances perovskite light absorption and promotes carrier transport, and the "lotus leaf effect" introduced by the photonic crystal significantly improves the stability of Sn-based perovskites. The photodetector prepared by this invention achieves highly sensitive, self-powered near-infrared detection under zero bias conditions, exhibiting high responsivity, high detectivity, low dark current, and excellent stability. It can be used in optical communication, information transmission, sensing, and security optoelectronic systems.

This disclosure provides a photodetector. The detector includes a substrate and, sequentially stacked on the substrate surface, an N-type doped layer, an absorption region, a P-type doped layer, and a converging structure. The first cross-sectional area of ​​the absorption region along the direction parallel to the substrate surface is smaller than the second cross-sectional area of ​​the P-type doped layer parallel to the substrate surface; the surface of the P-type doped layer away from the absorption region is a photosensitive surface. The converging structure is used to focus incident light from the photosensitive surface to the absorption region, so that the photodetector converts the incident light into an electrical signal. This detector can simultaneously achieve high responsivity and high bandwidth.

An on-chip visible light signal detector based on the photoimpedance effect of polymer electrolyte belongs to the field of functional photonic chip technology. It consists of a substrate layer, a lower cladding layer, a lower metal layer, a polymer grooved layer, an ion-polymer electrolyte core layer, and an upper metal layer, and the device is a MIM structure. The ion-polymer electrolyte core layer has an inverted ridge waveguide structure. The polymer electrolyte material PIL / PBI exhibits a photoimpedance effect; that is, when the detected optical signal propagates in the inverted ridge waveguide, it interacts with the polymer electrolyte, converting light energy into heat energy, increasing the concentration and activity of free ions inside the PIL / PBI, thereby changing its impedance value. This invention solves the problems of single detection dimension and insufficient responsivity in existing on-chip visible light detectors, realizing the detection of three dimensions of optical signal: polarization state, wavelength, and power. It has advantages such as fast response speed, simple fabrication process, low cost, small size, and high integrability.

The application discloses an infrared thermoelectric detector and a manufacturing method thereof, and belongs to the technical field of temperature sensing. The infrared thermoelectric detector comprises a substrate, a first thermocouple layer, a sacrifice layer and a second thermocouple layer are sequentially arranged on the substrate, and a vacuum heat insulation cavity is arranged in the sacrifice layer. The manufacturing method of the infrared thermoelectric detector comprises the following steps: preparing the vacuum heat insulation cavity in the sacrifice layer; etching the sacrifice layer to form a plurality of standby groove structures and a plurality of micropore arrays, the micropore array is a plurality of holes arranged on the top surface or the bottom surface of each standby groove structure, and the micropore array and the standby groove structure form a communication structure; and in a vacuum environment, a filling layer is deposited in the sacrifice layer, the communication structure is not completely filled, and at least one vacuum cavity is formed. Through the infrared thermoelectric detector with the vacuum heat insulation cavity, the response rate and the detection rate of the thermoelectric detector are effectively improved, and the resolution and the sensitivity of the detection result in the laser power measurement application are improved.

The application relates to the technical field of trace molecule detection, in particular to a photoelectric detection and sensing integrated digital metasurface infrared spectrum chip and a preparation method thereof. The chip comprises, from bottom to top, a substrate, a metal reflection layer, a metal nanoparticle layer, a pyroelectric photosensitive layer and a digital metasurface structure layer; the digital metasurface structure layer is in a discrete pattern composed of a pixel array in the transverse direction of the device, the digital metasurface structure layer can excite surface plasmon resonance under the irradiation of preset light waves, the light field energy is localized in the target molecules and the pyroelectric photosensitive layer, so that the responsivity and sensing sensitivity of the infrared spectrum chip are improved; and the array coding of the discrete pattern of the digital metasurface structure layer is designed through a preset algorithm, so that the electric field intensity at the preset spatial position is enhanced. The chip has the advantages of high responsivity, high sensing sensitivity and high signal-to-noise ratio.