43 results about "Responsivity" patented technology

An integrated semiconductor photodetector and its fabrication method are disclosed, relating to the field of integrated photodetector technology. This invention addresses the problems of existing detectors, such as limited functionality, insufficient responsivity, low integration, and difficulty in achieving synergistic miniaturization and high performance improvement. The method involves depositing a Cr conductive layer on the front side of a superlens substrate, uniformly coating the conductive layer surface with photoresist, pre-baking to prepare a dot-matrix mask pattern, developing and fixing followed by Ni deposition, and then stripping to obtain the Ni dot-matrix mask. ICP etching is used to remove the surface conductive layer, and a nanopillar array superlens structure is then fabricated. A photodetector layer is transferred to the back side of the substrate. Positive photoresist is spin-coated onto the substrate surface, pre-baking to prepare a source / drain electrode pattern, developing and fixing followed by sequential deposition of an adhesion layer metal and an electrode body metal layer. The metal layer in the non-electrode region is then stripped to obtain the metal electrode in contact with the photodetector layer, completing the detector fabrication. This invention can be applied to polarization imaging, space remote sensing, airborne detection, and optical communication.

The application relates to a dual-wavelength silicon-based PIN photoelectric sensor with ultralow dark current and high responsivity, which comprises a silicon substrate, a central P + anode region, high resistance / intrinsic silicon absorption region, bottom N + cathode region, junction termination extension region JTE, guard ring GRL, surface passivation layer and electrode structure. Through accurate regulation of the junction edge electric field, the application effectively suppresses the leakage current and early breakdown phenomenon caused by the high edge electric field in the plane PIN structure, realizes sub-nanoampere dark current output, and simultaneously, through synergistic optimization of the intrinsic region thickness and the doping distribution, the sensor obtains higher light responsivity at two typical wavelengths of 660 nm and 940 nm, and meets the requirements of short-wave shallow absorption and long-wave deep absorption.

The application discloses a PIN type back incidence germanium-silicon photodiode based on inductance peaking, and the photodiode structure sequentially comprises a back incidence area, an absorption area and a collection area from top to bottom; the back incidence area comprises a silicon substrate and silicon microlenses formed by etching on the back surface of the silicon substrate; the absorption area comprises a doped area and a germanium absorption layer, the built-in electric field is formed by P-type and N-type doping of the doped area, and the germanium absorption layer is used for absorbing incident photons and generating photo-generated carriers; the collection area comprises a self-alignment resistance layer, an interlayer dielectric layer, a coplanar waveguide electrode and a metal bump, and the geometric parameters of the coplanar waveguide electrode are optimized to introduce a compensation inductance L p The inductance peaking is realized, so that the bandwidth of the photodiode is optimized; the metal bump is arranged on the surface of the coplanar waveguide electrode to realize flip-chip bonding of the photodiode and an external circuit. p The bandwidth of the device can be significantly improved under the premise of ensuring high responsivity and low dark current.

The application belongs to the technical field of photoelectric detectors, and discloses a high-performance two-dimensional perovskite photoelectric detector and a preparation method thereof. First, a SiO2 glass substrate is cleaned, and a precursor solution is dropped on the surface of the glass substrate. Chloroform antisolvent solution doped with ZnO quantum dots is dropped on the precursor solution. Then, ZnO quantum dots / (PEA)2PbI4 nanosheet thin film is formed by spin coating, and the thin film is annealed. The above steps are repeated multiple times to obtain a uniform thin film. The glass substrate with the uniform thin film is plated with gold by a vacuum evaporation method to obtain an electrode. The application improves the carrier migration rate by doping the concentration of ZnO quantum dots, improves the photocurrent size, obtains higher responsivity and detection rate, and shorter response time. The manufacturing process is simple and has strong repeatability. The application has high photocurrent size, high responsivity and high detection sensitivity. The application selects a suitable concentration of ZnO quantum dots. The application can be prepared in an air environment and has strong stability.

The application discloses a kind of laser semi-active seeker testing system and method, system includes: optical platform, laser target simulation unit, seeker fixed seat, three-axis turntable and stepper motor etc.Modular.The laser target simulation unit is used to simulate the real echo signal generated after laser irradiation to target;The seeker fixed seat is installed on three-axis turntable, three-axis turntable is installed on optical platform and is driven by stepper motor.Laser target simulation unit, laser semi-active seeker and stepper motor are respectively connected with host computer communication.The application is applicable to miniature laser semi-active seeker, and can test the working distance, field angle, responsivity and multiple performance parameters of miniature laser semi-active seeker synchronously.

This invention provides a cavity-enhanced germanium-silicon photodetector based on silicon corner mirrors, comprising a silicon substrate layer, a germanium absorption region on the silicon substrate layer, and silicon corner mirrors located on the front and rear sides of the germanium absorption region; a germanium via layer is provided above the germanium absorption region, the via layer having a plurality of germanium vias, and a signal electrode is provided at the top of the germanium via layer; silicon via layers are provided on the left and right sides of the germanium absorption region, the silicon via layers having a plurality of silicon vias, and a ground electrode is provided at the top of the silicon via layers; two silicon nitride waveguides are arranged opposite each other, extending from the opposite outer sides of the two silicon via layers toward the sides of the germanium absorption region. The technical solution of this invention has excellent high-power processing capability, achieves polarization-insensitive detection, effectively overcomes the contradiction between responsivity and bandwidth, is fully compatible with CMOS manufacturing processes, and is conducive to large-scale integration and mass production.

This invention discloses a high-performance tin-based perovskite photodetector, its fabrication method, and its application in covert optical information transmission. The photodetector sequentially comprises a conductive substrate, an electron transport layer, a tin-based perovskite layer, a hole transport layer, and a metal electrode layer. The tin-based perovskite layer is FASnI3, and 1,4-butanediamine hydroiodate is introduced as a molecular additive to suppress Sn. 2+ Oxidation and reduction of defect state density optimize film quality. Based on this, FASnI3 perovskite films with an inverse opal structure were successfully prepared. The slow photon effect significantly enhances perovskite light absorption and promotes carrier transport, and the "lotus leaf effect" introduced by the photonic crystal significantly improves the stability of Sn-based perovskites. The photodetector prepared by this invention achieves highly sensitive, self-powered near-infrared detection under zero bias conditions, exhibiting high responsivity, high detectivity, low dark current, and excellent stability. It can be used in optical communication, information transmission, sensing, and security optoelectronic systems.

This disclosure provides a photodetector. The detector includes a substrate and, sequentially stacked on the substrate surface, an N-type doped layer, an absorption region, a P-type doped layer, and a converging structure. The first cross-sectional area of ​​the absorption region along the direction parallel to the substrate surface is smaller than the second cross-sectional area of ​​the P-type doped layer parallel to the substrate surface; the surface of the P-type doped layer away from the absorption region is a photosensitive surface. The converging structure is used to focus incident light from the photosensitive surface to the absorption region, so that the photodetector converts the incident light into an electrical signal. This detector can simultaneously achieve high responsivity and high bandwidth.

An on-chip visible light signal detector based on the photoimpedance effect of polymer electrolyte belongs to the field of functional photonic chip technology. It consists of a substrate layer, a lower cladding layer, a lower metal layer, a polymer grooved layer, an ion-polymer electrolyte core layer, and an upper metal layer, and the device is a MIM structure. The ion-polymer electrolyte core layer has an inverted ridge waveguide structure. The polymer electrolyte material PIL / PBI exhibits a photoimpedance effect; that is, when the detected optical signal propagates in the inverted ridge waveguide, it interacts with the polymer electrolyte, converting light energy into heat energy, increasing the concentration and activity of free ions inside the PIL / PBI, thereby changing its impedance value. This invention solves the problems of single detection dimension and insufficient responsivity in existing on-chip visible light detectors, realizing the detection of three dimensions of optical signal: polarization state, wavelength, and power. It has advantages such as fast response speed, simple fabrication process, low cost, small size, and high integrability.

The application discloses a PIN type back incidence germanium-silicon photodiode based on inductance peaking, and the photodiode structure sequentially comprises a back incidence area, an absorption area and a collection area from top to bottom; the back incidence area comprises a silicon substrate and silicon microlenses formed by etching on the back surface of the silicon substrate; the absorption area comprises a doped area and a germanium absorption layer, the built-in electric field is formed by P-type and N-type doping of the doped area, and the germanium absorption layer is used for absorbing incident photons and generating photo-generated carriers; the collection area comprises a self-alignment resistance layer, an interlayer dielectric layer, a coplanar waveguide electrode and a metal bump, and the geometric parameters of the coplanar waveguide electrode are optimized to introduce a compensation inductance L p The inductance peaking is realized, so that the bandwidth of the photodiode is optimized; the metal bump is arranged on the surface of the coplanar waveguide electrode to realize flip-chip bonding of the photodiode and an external circuit. p The bandwidth of the device can be significantly improved under the premise of ensuring high responsivity and low dark current.

This application relates to the field of microscopic imaging radiation calibration technology, providing a photon flux standard source and a method for measuring photon flux responsivity. The photon flux standard source includes an integrating sphere light source and an aperture; the outer side of the integrating sphere light source outlet includes a first flat surface with a first area, and the side of the aperture near the integrating sphere light source has a second flat surface with a second area. The first flat surface and the second flat surface are parallel and have a planar gap. The integrating sphere light source outlet has an average brightness within a solid angle defined by the aperture; wherein the planar gap, the average brightness, the first area, and the second area are used to calculate the photon flux to determine the photon flux responsivity of the detector under test. This application can accurately determine the photon flux entering the microscopic imaging system, thus improving the accuracy of the photon flux responsivity of the microscopic imaging system calibrated based on the photon flux.

The application discloses an epitaxial method of a very long wave InAs / InAsSb superlattice infrared detector and relates to the technical field of semiconductor devices. The method comprises the following steps: first, preheating a GaSb substrate; then, growing an InAs layer by applying In beam and As beam; then, growing a transition layer by synchronously increasing As and Sb beams at equal increments; then, growing an InAsSb layer by stabilizing As and Sb beams; then, synchronously adjusting As and Sb beams at equal decrements to restore the initial As beam and make the Sb beam zero; and then, repeating the growth process of each layer to form a superlattice structure, and obtaining a target epitaxial wafer through post-processing. The application realizes smooth transition of the InAs layer and the InAsSb layer by precisely controlling the beam and the V / III ratio, obtains a high-quality superlattice structure, guarantees the very long wave response characteristics, and significantly improves the response rate, the detection rate and the working stability of the detector.

This invention belongs to the field of optical technology. It provides a method and system for improving the power monitoring range of a photodetector in an optical chip. The method involves: acquiring the optical signal from the optical chip using a photodetector; turning off the light source and applying a zero-voltage bias to the photodetector to minimize dark current, recording the acquired dark current for dark current calibration; turning on the light source and acquiring the photocurrent signal from the photodetector; calculating the optical power based on the responsivity of the photodetector material, the dark current, and the photocurrent signal; and controlling the temperature of the entire optical chip within a set range throughout the process. This invention only requires a photodetector with a zero-voltage bias. By controlling the local temperature to reduce the fluctuation of the dark current and combining this with the material's responsivity analysis, the measured current signal can be directly used to monitor the corresponding optical signal, thus achieving wide-range optical power monitoring.

This invention relates to the field of photoelectric detection technology, specifically to a diamond immersion detector. The invention utilizes ultra-wide bandgap boron-doped p-type diamond single crystal (PDSC) as the photoelectrode to construct a vacuum ultraviolet immersion photodetector with a PDSC-ultrapure water-Pt structure. The PDSC immersion photodetector prepared by this invention exhibits a responsivity as high as 87.8 mA / W under zero bias and 193 nm excitation wavelength conditions, which is close to the photoresponsivity shown by standard commercial Si detectors; furthermore, under low optical power excitation, the responsivity of the PDSC immersion detector can reach as high as 670 mA / W. The immersion detector of this invention is a low-cost, self-powered, and highly sensitive vacuum ultraviolet photodetector with good stability, showing promising application prospects for 193 nm power monitoring in deep ultraviolet light source lithography machines.

This invention discloses an on-chip integrated two-dimensional van der Waals heterojunction high-speed photodetector and its fabrication method, comprising: a substrate constructed sequentially from bottom to top; an optical waveguide; a heterojunction composed of stacked graphene and black phosphorus layers; metal electrodes respectively contacting the graphene and the black phosphorus; and an alumina layer covering the surfaces of the black phosphorus and graphene layers for protection. This invention achieves an operating bandwidth greater than 40 GHz, significantly improving the applicability of the photodetector in high-speed communication and high-frequency signal processing, meeting the performance requirements of future ultra-high-speed optoelectronic systems. By optimizing the black phosphorus and graphene heterojunction structure, dark current is suppressed to the microampere level, while a high responsivity of 18 mA / W is achieved at a wavelength of 1.55 μm, providing high-sensitivity photodetection capability. By covering the channel material surface of the device with an alumina protective layer, the environmental adaptability and long-term operational stability of the heterojunction are significantly improved, ensuring high reliability and stability of the device under complex environmental conditions.

The application belongs to the technical field of semiconductor devices, and particularly relates to a spectrometer and method based on a heterostructure and a periodic super surface array. The spectrometer comprises a Si substrate, a SiO2 substrate, a gate, a BN substrate, a source, a drain, a WSe2 and MoTe2 van der Waals heterojunction, and a periodic super surface array. The periodic super surface array is arranged in the WSe2 and MoTe2 van der Waals heterojunction region to adjust photoelectric response output. Nonlinear responsivity curves are obtained under different bias voltages and gate voltages. Unknown spectra can be reconstructed by combining a reconstruction algorithm, and the spectrometer function can be realized.

The utility model relates to a 1.6T SR8 light engine, include: PCB board and locate TX lens and RX lens on the PCB board, be equipped with array Vcsel chip and driver chip on the covering area of TX lens on the PCB board, array Vcsel chip is coupled with TX lens, and driver chip is electrically connected with array Vcsel chip, be equipped with array PD chip and TIA chip on the covering area of RX lens on the PCB board, array PD chip is coupled with RX lens, and TIA chip is electrically connected with array PD chip. Advantageous effects are: let array Vcsel chip only with a TX lens coupling, and let array PD chip only with a RX lens coupling, so coupling time TX lens only needs to guarantee the annular flux of Vcsel chip, RX lens only needs to guarantee the responsivity of PD chip, so coupling speed is fast, and product performance is best, and yield is high.

A fixing device includes a heatable portion that is heated by a heat source, a first temperature detector that detects a temperature of the heatable portion, and a determiner that determines whether the heatable portion has reached a target temperature after correcting detection delay of the first temperature detector using an actual temperature, the actual temperature being obtained by preliminarily detecting a temperature change of the heatable portion at a start of heating using a second temperature detector exhibiting higher responsivity than the first temperature detector.

An upper radiation thermometer is provided obliquely above a semiconductor wafer to be measured. The upper radiation thermometer includes a photovoltaic detector that produces an electromotive force when receiving light. The photovoltaic detector has both high-speed responsivity and good noise properties in a low-frequency range. The upper radiation thermometer does not require a mechanism for cooling because the photovoltaic detector is capable of obtaining sufficient sensitivity at room temperature without being cooled. There is no need to provide a light chopper and a differentiating circuit in the upper radiation thermometer. This allows the upper radiation thermometer to measure the front surface temperature of the semiconductor wafer with a simple configuration both during preheating by means of halogen lamps and during flash irradiation.

A thermopile structure and its fabrication method are disclosed. The thermopile structure includes: a substrate; a first insulating layer located on the surface of the substrate; a first metal layer located on a partial surface of the first insulating layer; a second insulating layer located on the exposed surface of the first insulating layer and the surface of the first metal layer; a vertically distributed thermopile including a plurality of thermocouples connected in series, each thermocouple including a first thermoelectrode and a second thermoelectrode; a second metal layer located on the surface of the second insulating layer, the second metal layer being used to connect the first thermoelectrode of any thermocouple to the second thermoelectrode of another adjacent thermocouple; an absorption layer located on the surface of the second insulating layer, the surface of the second metal layer, the exposed surface of the first thermoelectrode, and the exposed surface of the second thermoelectrode; and a third metal layer located within the absorption layer. This invention improves the device's responsivity and performance by increasing the integration density of the thermocouples.

The application discloses a kind of joint correction method and system of spaceborne multispectral imager, it is related to spectral imaging instrument calibration technical field, including obtaining the current ambient temperature of spaceborne multispectral imager and the measured center effective signal of observed image;Temperature effect correction coefficient look-up table is searched based on current ambient temperature or current ambient temperature is substituted into temperature effect fitting function, determine the temperature effect correction coefficient corresponding to each spectral channel under current ambient temperature;Based on measured center effective signal, non-linear effect correction coefficient look-up table is searched or measured center effective signal is substituted into non-linear fitting function, and the non-linear effect correction coefficient corresponding to each spectral channel under measured center effective signal is acquired;Based on the temperature effect correction coefficient and non-linear effect correction coefficient of each spectral channel, the absolute responsivity under target temperature and target brightness condition obtained by laboratory calibration is jointly corrected.

This invention discloses an ultraviolet detector and its fabrication method, applicable to the semiconductor field. The detector includes: a substrate; a p-GaN layer located on one side of the substrate, the p-GaN layer including a p-GaN gate layer in a first region; a barrier layer located on the surface of the p-GaN layer facing away from the substrate; a channel layer located on the surface of the barrier layer facing away from the substrate, the channel layer including a nano-bump array in the first region and a remaining channel layer in the first region; the remaining channel layer is disposed between the nano-bump array and the barrier layer; and a passivation layer located on the surface of the channel layer facing away from the substrate. The barrier layer and the channel layer form a two-dimensional electron gas, and the p-GaN gate layer, barrier layer, and channel layer form a built-in electric field; the nano-bump array and the passivation layer form a polarized electric field; the built-in electric field at least covers a portion of the sidewalls of the nano-bump array. The ultraviolet detector achieves low dark current, high responsivity, and high response speed under the action of the built-in electric field and the polarized electric field.

This invention provides a Si-doped lithium gallium oxide thin-film solar-blind ultraviolet detector, its fabrication method, and its application. The fabrication method includes the following steps: mixing SiO2, Li2CO3, and Ga2O3 polycrystalline powders, and using a solid-state reaction method to obtain Li... y (Ga 1‑x Si x 5O8 polycrystalline target material; Li was prepared on the substrate using pulsed laser deposition. y (Ga 1‑x Si x )5O8 thin film; subsequently in Li y (Ga 1‑x Si x Electrode deposition on 5O8 thin film. Compared with undoped Si Li 0.9 Compared with Ga5O8 thin-film detectors, the solar-blind ultraviolet detector provided by this invention has improved the on / off ratio, responsivity, and detectivity by up to 1177 times, 1130 times, and 1153 times, respectively, and shortened the response time by up to 0.5 s. It has stable working performance and can be applied to fields involving solar-blind ultraviolet signal detection, such as forest fire monitoring and missile exhaust tracking.

The application relates to a screening method and system of a crystalline silicon cell light conversion layer, and belongs to the technical field of solar cell production. The method comprises the following steps: establishing a physical model of a light conversion process of a fluorescent conversion layer; according to the physical model and ray optics, a theoretical dynamic responsivity model of the crystalline silicon cell to different waveband incident light is established; the theoretical dynamic responsivity model is used to analyze key factors influencing the light conversion effect of the fluorescent conversion layer; whether a given material is suitable for the to-be-tested fluorescent conversion layer is judged according to the key factors, and an optimal material is obtained; the optimal material is made into a fluorescent conversion layer and added to the surface of the crystalline silicon cell, and the performance parameters of the crystalline silicon cell at this time are calculated; and the production material of the fluorescent conversion layer is determined through analysis of the performance parameters. The application considers the influence of the material properties of the LDS layer on the light conversion effect, and can effectively screen the LDS layer material and evaluate the theoretical effect.

The application belongs to the technical field of semiconductors, and discloses a double Ga2O3 insertion layer GaN heterostructure ultraviolet phototransistor and a preparation method thereof. The double Ga2O3 insertion layer GaN heterostructure ultraviolet phototransistor structure comprises a substrate layer, a GaN buffer layer, a first i-GaN layer, a first Ga2O3 insertion layer, a second i-GaN layer, a second Ga2O3 insertion layer, a third i-GaN layer, an Al x Ga 1‑x N barrier layer, a p-type layer, a source electrode and a drain electrode arranged on both sides of the upper surface of the barrier layer. The application adopts Ga2O3 as the insertion layer of the GaN heterostructure ultraviolet phototransistor, redistributes the electron concentration of the depletion region, widens the depletion region, reduces the channel electron concentration in the dark state, thereby reducing the dark current of the device; in the light state, there is a strong built-in electric field at the Ga2O3 and GaN interface, which promotes the separation of electron-hole pairs, and the field strength of the barrier layer is larger, thereby enhancing the attraction of the channel to electrons, thereby improving the photocurrent and responsivity of the device.

The application relates to a kind of A-D-A'-D-A type evaporable near-infrared electron acceptor materials and a preparation method and organic photoelectric detector application thereof, which have the following structure: A' is electron-deficient unit, D is electron donor unit, and A is electron acceptor unit.The evaporable near-infrared acceptor small molecule provided in the application effectively enhances intramolecular ICT effect, improves the quinoid content of conjugated skeleton, promotes the delocalization of electron cloud on the conjugated skeleton, thereby extending the light response range to the near-infrared band;It is applied in the field of organic photoelectric detector, and has high responsivity and high detection rate, larger cut-off bandwidth and wide linear dynamic range in the near-infrared region.The application fills the technical gap of evaporable high-performance near-infrared organic electron acceptor materials, and the material provides a key material basis for the industrialization application of flexible near-infrared imaging chip, medical diagnosis and industrial detection, etc., and promotes the progress of intelligent consumer electronics technology.

The present application relates to the field of terahertz semiconductor devices, and specifically discloses a terahertz device epitaxial structure, a preparation method thereof and a terahertz device. The terahertz device epitaxial structure comprises a substrate, a buffer layer, a lower contact layer, a first active layer and an upper contact layer which are sequentially stacked on the substrate; the first active layer is a periodic structure, each period comprising a first GaN well layer, an Al x Ga 1‑x N well layer and an Al y Ga 1‑y N barrier layer which are sequentially stacked; and x<=0.6y. The present application can improve responsivity.

This invention discloses a method for fabricating an infrared photodetector based on gold nanopillars, comprising: etching an electrode structure using photolithography; pretreating a SiO2 layer on a silicon substrate surface using mild plasma technology to obtain a pretreated substrate; depositing nickel-gold electrodes on the pretreated substrate surface to obtain embedded electrodes; bonding a double-channel anodic aluminum oxide film onto the silicon substrate with the embedded electrodes, followed by depositing gold nanopillars; transferring a few-layer MoS2 film obtained by stripping to the embedded electrodes and gold nanopillars; transferring a few-layer MoTe2 film obtained by stripping to the MoS2 film, and cross-contacting the area where the MoS2 film contacts the embedded electrodes with the MoS2 film to obtain a MoS2 / MoTe2 heterojunction; etching the device structure using photolithography, and depositing electrodes to obtain the infrared photodetector. This invention provides a simple and reliable fabrication method, and the fabricated infrared photodetector exhibits characteristics such as short response time, high photoelectric responsivity, wide spectral detection range, and superior infrared light response.

This invention belongs to the field of gas sensing technology and discloses a gas sensor with adjustable responsivity and measurement range, and its fabrication method. The sensor includes a bottom conductive film, an upper conductive film, and a ceramic tube with gold electrodes. The upper conductive film is deposited on the surface of the bottom conductive film. The materials of the bottom and upper conductive films are SnO2 or ITO, and the bottom and upper conductive films are made of different materials. The bottom conductive film is deposited on a pretreated Si wafer, and then the upper conductive film is deposited on the bottom conductive film, followed by annealing and heat treatment. Test results show that when SnO2 is the bottom layer and ITO is the top layer with partial coverage, it exhibits high sensitivity response to acetone gas in the concentration range of 10 ppb-1000 ppm. When ITO is fully covered, the response saturates at 300 ppm, which is suitable for low concentration detection. Conversely, when ITO is the bottom layer and SnO2 is the top layer, the fully covered structure has a wide response range, responding in the concentration range of 10 ppb-1000 ppm, while the half-covered structure is suitable for low concentration detection, and basically saturates at 300 ppm. This invention replaces traditional circuit adjustment with physical coverage area control, enabling dynamic range switching without complex signal processing, and significantly improving the applicability of the sensor in scenarios such as medical diagnosis and environmental monitoring.

This invention provides a non-contact interactive system based on a photoelectric sensor array, comprising: a photoelectric sensor array, the photoelectric sensor array including: a transparent substrate; a conductive layer formed on the transparent substrate; a patterned confinement layer formed on the conductive layer for forming a patterned array of photoelectric active materials; a patterned array of photoelectric active materials formed on the patterned confinement layer, wherein each patterned unit in the array forms a miniature photoelectric sensor unit under the drive of an external bias voltage; a surface light source located on the back side of the substrate of the photoelectric sensor array; and a reflector movably located on the front side of the substrate of the photoelectric sensor array. This interactive system utilizes the high responsivity and fast response speed characteristics of the photoelectric sensor array to enable the interactive interface to quickly track signals from moving objects, and achieves photocurrent growth through light reflection from the reflector onto the surface light source, thereby realizing a responsive, contactless, three-dimensional human-computer interaction.