525 results about "Responsivity" patented technology

The invention discloses an unmanned aerial vehicle visual angle infrared light and visible light fusion target detection method, belongs to the technical field of target detection, and solves the problems that in the dual-light fusion target detection field in the prior art, the sensitivity to dislocation between modes is poor, the adaptability is poor when the mode resolutions are different, and the response rate to a small target is low. Comprising the following steps of 1, collecting infrared light and visible light image data sets of different scenes and different types, dividing the infrared light and visible light image data sets into a training set, a verification set and a test set, and performing registration of the data sets; 2, the backbone network is composed of residual modules, convolution and pooling operation is carried out on each stage of residual module, and feature maps of different scales are obtained through down-sampling; and step 3, attaching a self-attention module to the output of each level of residual module of the backbone network to extract the correlation of the features between the channels. According to the method, the residual network, the attention mechanism and the fusion module are combined, and the performance of dual-light fusion target detection is effectively improved.

The invention discloses a communication encryption method based on a two-dimensional inorganic / inorganic Van der Waals heterojunction polarized photoelectric detector, and belongs to the technical field of photoelectric devices. The photoelectric detector comprises a substrate, two-dimensional MoSe2 material layers, two-dimensional ReS2 material layers and a thin film electrode, wherein the two two-dimensional material layers form a Van der Waals vertical heterojunction and are of an II-type heterostructure; due to anisotropic light absorption of ReS2, effective carrier collection and transport capabilities of MoSe2 and an inhibition effect of heterojunction on dark current, the photoelectric property of the two-dimensional ReS2 / MoSe2 photoelectric detector is obviously improved, and meanwhile, the two-dimensional ReS2 / MoSe2 photoelectric detector has high responsivity of 89.4 A / W, fast response speed of 30.5 s and polarization sensitive characteristics, and can be applied to the field of photoelectric detectors. On the basis, information is subjected to multiple encryption by means of a polarization state information encryption technology, so that the concealment and security of an information transmission process can be greatly improved, and a new possibility is provided for the development of a security communication technology in the future.

The invention discloses an ultrafast motion sensing floating gate transistor based on Van der Waals heterojunction and application thereof. The floating gate transistor comprises a back gate substrate, a Van der Waals heterojunction channel layer, a source electrode and a drain electrode, the source electrode and the drain electrode are arranged on the two sides of the channel layer, the back gate substrate is heavily doped silicon, the surface of the heavily doped silicon is covered with hafnium oxide / aluminum oxide / hafnium oxide (HfO2 / Al2O3 / HfO2) used for nonvolatile light storage, and the Van der Waals heterojunction channel layer is composed of bismuth oxygen selenium-palladium selenide nanosheets used for sensing. The floating gate transistor disclosed by the invention has the capability of quickly responding to an ultraviolet-near infrared wide spectrum and non-volatile storage of light at the same time, and the sensitive spectral response range and responsivity of the photoelectric detector can be effectively improved, so that the integration of dynamic target optical signals in devices in a space domain and a time domain is realized.

The invention relates to the technical field of semiconductor photoelectric detectors, in particular to an alpha-phase gallium oxide thin film, an ultraviolet detector and a preparation method. The preparation method comprises the following steps: selecting a c-plane sapphire substrate, and placing the substrate in an MOCVD reaction chamber; the reaction chamber is alternately inflated and vacuumized, and the substrate tray is heated to 650-730 DEG C; introducing an oxygen source into the MOCVD reaction chamber, and supplying a reaction source to form alpha-Ga2O3 on the surface of the substrate; adjusting the flow of the carrier gas to 1000-2000 sccm, and continuously supplying an oxygen source and a reaction source to the MOCVD reaction chamber to realize epitaxial growth of the single crystal alpha-Ga2O3 film; and cooling to room temperature and taking out to finish the preparation of the alpha-phase gallium oxide film on the c-plane sapphire substrate. The method has the advantages that the alpha-phase gallium oxide film has high crystallinity and low surface roughness; the ultraviolet detector has the advantages of high responsivity and high response speed, and shows excellent ultraviolet detection performance.

The invention discloses an infrared polarized photoelectric detector based on a plasmon metasurface and a preparation method thereof, and belongs to the technical field of photoelectric detection. According to the photoelectric detector, coupling resonance is achieved through the bottom metal nano array and the WSe2 / InSe heterojunction, heterojunction infrared light absorption is enhanced, photocarriers are generated, and finally the photocarriers are collected by the top electrode layer to form photocurrent, so that the infrared light detection capacity of the original WSe2 / InSe heterojunction is improved. And optical absorption enhancement at different infrared wavelengths can be realized by adjusting the period, the length and the width of the metal nano array. When 4V bias voltage is applied, compared with an original WSe2 / InSe heterojunction photoelectric detector, the photoelectric responsivity of the photoelectric detector is improved by one order of magnitude, and the detection rate is improved by two orders of magnitude. In the aspect of polarization detection, the anisotropy of the nano array is utilized, and polarization insensitivity is creatively improved to the polarization ratio of 5.2.

The invention provides a weak light environment image contrast improvement method for a robot welding path, and relates to the field of image processing, and the method comprises the steps: firstly improving an original compression mode based on a brightness single factor through a contrast perception compression factor; secondly, a low-light image enhancement color space based on a polar coordinate structure is introduced, and a contrast perception compression factor is combined to construct a low-light image enhancement color space with a space decoupling capability; a welding path structure response diagram is constructed by fusing the direction consistency entropy and the direction responsivity, the sensitivity to the structural characteristics with directivity and coherence such as the welding path is enhanced, and the accuracy and robustness of structure extraction are improved; and finally, through combination of the robot welding path image after color enhancement and the welding path structure response diagram, background noise interference is effectively inhibited while welding edge details are highlighted, accurate enhancement of the welding path image is realized, the welding edge details are enhanced, and the definition and the structure continuity of the image are improved.

The invention provides an all-dielectric resonance enhanced photoelectric detector and a manufacturing method thereof, and belongs to the field of micro-nano processing and silicon-based photoelectric detectors. The enhanced photoelectric detector comprises a bottom SOI (Silicon On Insulator) substrate; the first Si doping layer is arranged above the substrate; the semiconductor absorption layer is arranged above the first Si doping layer, the interior of the semiconductor absorption layer is designed to be a periodic layered artificial unit, after incident light enters, remarkable local field enhancement is achieved on the layer, and photon-generated carriers are generated; the second Si doping layer is arranged above the semiconductor layer; and the deposition passivation layer is arranged on the uppermost layer and is used for protecting the surface of the metasurface. According to the high-speed photoelectric detector based on all-dielectric metasurface enhancement, the responsivity of the detector can be improved, and meanwhile the problem of mutual restriction between response bandwidth and the responsivity is solved.

The invention provides a three-dimensional laser radar-based power transmission line simulation flight intelligent inspection method, and relates to the technical field of flight inspection control. Three-dimensional space point cloud data and visual image data are acquired; conducting wire real-time identification according to the three-dimensional space point cloud data and the visual image data to obtain routing inspection wire space characteristics, and determining attitude dynamic responsivity according to the routing inspection wire space characteristics; obtaining an initial positioning result of the inspection unmanned aerial vehicle, and determining a relative collision feature based on the attitude dynamic responsivity, the initial positioning result and the inspection conductor spatial feature; performing tree obstacle identification through the three-dimensional space point cloud data and the visual image data to obtain inspection tree obstacle information, and performing flight collision prediction according to the inspection tree obstacle information to obtain a flight collision factor; flight control is performed on the inspection unmanned aerial vehicle based on the relative collision characteristics and the flight collision factors, the collision risk of the inspection unmanned aerial vehicle can be identified in advance in the inspection process, and the safety of flight inspection is improved.

A spectrometer apparatus (110) and method of obtaining spectroscopy information about at least one object (112) are disclosed. The spectrometer device (110) comprises: at least one light source (114) for generating illumination light (116) for illuminating the object (112), the light source (114) comprising at least one light emitting diode (118) and at least one luminescent material (120) for converting primary light generated by the light emitting diode (118) into secondary light; ii. At least one broadband detector (128) for detecting detection light (130) within a spectral range at least partially comprising a spectral range of the primary light and the secondary light, the broadband detector (128) is configured to generate at least one primary detector signal upon detection of the detection light (130) within the spectral range of the primary light, where the broadband detector (128) is further configured to generate at least one secondary detector signal upon detection of the detection light (130) within the spectral range of the secondary light; and iii. At least one evaluation unit (136) for evaluating the primary detector signal and the secondary detector signal generated by the broadband detector (128), for determining responsivity information (137) about the broadband detector (128) from one of the primary detector signal or the secondary detector signal, and for deriving spectroscopy information about the object (112) from the other of the primary detector signal or the secondary detector signal by taking into account responsivity information (137) about the broadband detector (128).

The invention relates to the field of photoelectric material and device physics, and discloses a preparation method of a Ga2O3: Sn / HfOx heterojunction photoelectric sensor, and the method comprises the following steps: S1, cleaning a substrate, S2, preparing a Ga2O3: Sn thin film, S3, growing an electrode, S4, preparing an HfOx thin film, and carrying out neural synapse bionic application of the Ga2O3: Sn / HfOx heterojunction photoelectric sensor. Comprising Ga2O3: Sn / HfOx synaptic plasticity research and Ga2O3: Sn / HfOx photoelectric sensor sensing and storage calculation integrated application research. The Ga2O3: Sn thin film is prepared by adopting a sol-gel method with accurate and controllable doping amount, donor doping with controllable concentration is realized by controlling the mass of the added tin sheet, so that the photocurrent and responsivity of the photoelectric sensor are increased, the HfOx thin film is prepared by adopting a magnetron sputtering method, the photoelectric sensor with a double-layer structure is constructed, the detection rate and responsivity of the device are improved, and the photoelectric sensor is suitable for the field of photoelectric sensors. An ultraviolet signal is used to simulate a plurality of synaptic functions, including EPSC, PPF and empirical learning behaviors. Furthermore, a high-linearity light-enhanced electrical suppression behavior is realized, and a basis is provided for realizing a high-precision image recognition function.

The invention provides an organic electrochemical transistor regulated and controlled by a grating electrode and a preparation method of the organic electrochemical transistor, and belongs to the technical field of photoelectric detection and organic electrochemical transistors. The organic electrochemical transistor comprises a transparent substrate, a detector anode, a hole transport layer, a photosensitive layer, a semiconductor active layer, an electron transport layer, a detector cathode, a packaging layer, a transistor grid electrode, a transistor source electrode, a transistor drain electrode and an electrolyte. A QPD and an OECT are integrated above the transparent substrate. The invention also provides a preparation method of the organic electrochemical transistor. Through the illumination effect, the photo-generated voltage generated by the QPD serves as a grid regulation and control signal, and higher current variation for different illumination intensities is achieved. The preparation process is remarkably simplified, the responsivity, the detectivity and the linear dynamic range of the device are improved, the stability and the low power consumption characteristic are improved, and a new solution is provided for application of a photoelectric-electrochemical fusion device in the fields of flexible electronics, wearable detection, biosensing and the like.

The invention provides a silicon carbide single-photon detector and a preparation method thereof, and relates to the technical field of silicon carbide solar blind detection. The silicon carbide multiplication layer and the aluminum gallium nitrogen absorption layer of different material systems are sequentially grown on the silicon carbide substrate, and the side, far away from the silicon carbide substrate, of the aluminum gallium nitrogen absorption layer is the light incidence side, so that incident light firstly passes through the aluminum gallium nitrogen absorption layer and is excited to generate current carriers, and then the current carriers are multiplied by the multiplication layer to generate internal gain, so that the light emitting efficiency is improved. The detection sensitivity is improved. The forbidden bandwidth range of the aluminum gallium nitrogen absorption layer coincides with the photon energy range of the solar-blind wave band, so that the aluminum gallium nitrogen absorption layer only absorbs the solar-blind wave band and transmits the wave band outside the solar-blind wave band, absorption of photons outside the solar-blind wave band when a silicon carbide absorption layer is adopted is avoided, light filtering in a light filter mode is also avoided, and the detection responsivity is improved.

The invention relates to a photoelectric device for generating electric energy through conversion of ultraviolet light and near-infrared light, and discloses an ultraviolet photoelectric synapse / near-infrared photoelectric detection dual-mode photoelectric device. The dual-mode photoelectric device integrates dual functions of ultraviolet photoelectric synapse and near-infrared photoelectric detection: the ultraviolet photoelectric synapse function is realized based on a heterojunction formed by a single-layer graphene film and a wide bandgap perovskite Cs3Cu2I5 film, and B4PyMPM is doped in the Cs3Cu2I5 film to serve as an electron capture site, so that the electron capture capability is enhanced, and the photoelectric detection efficiency is improved. The performance of the ultraviolet photoelectric synapse device can be improved; a near-infrared photoelectric detection function is realized based on a heterojunction formed by a single-layer graphene thin film and n-type Ge, and the thickness of the Cs3Cu2I5 thin film is optimized, so that the Cs3Cu2I5 thin film becomes an antireflection layer of a 1550 nm near-infrared band, and the responsivity, the specific detection rate and other properties of a near-infrared photoelectric detection device are improved. The device disclosed by the invention is simple in structure and process, expensive instruments and equipment are avoided, and the preparation cost of the device is reduced.

An electro-optical modulation chip (100) capable of monolithically integrating an active optical device, and a preparation method. The electro-optical modulation chip (100) comprises, from top to bottom, a compound semiconductor active layer (103), a germanium thin film layer (104) and an electro-optical material waveguide layer (105), wherein the electro-optical material waveguide layer (105) forms corresponding waveguide structures (12) by means of photoetching and etching; the germanium thin film layer (104) forms a germanium absorption layer (104-2) and a germanium substrate growth layer (104-1) by means of photoetching and etching; and the germanium thin film layer (104) is prepared by the ion scissors technology. On the one hand, high-speed and high-responsivity O / C waveband optical detection can be achieved, and on the other hand, a growth substrate matching the lattice of a compound semiconductor is provided for the compound semiconductor, achieving simultaneous integration of an optical gain semiconductor device.

The invention provides a back incidence avalanche photodetector and a manufacturing method thereof, and the detector comprises a substrate which comprises a front surface and a back surface which are oppositely disposed; the etching barrier layer is located on the front face of the substrate, and a groove for exposing the etching barrier layer is formed in the back face of the substrate; the epitaxial structure is located on the etching barrier layer, and the epitaxial structure comprises an upper electrode contact layer; the upper electrode layer is located on the epitaxial structure; and the DBR reflector is located in the groove and located at the bottom of the etching barrier layer. The groove for exposing the etching barrier layer is formed in the back surface of the substrate, and the DBR is formed in the groove, so that the length of the whole resonant cavity can be accurately controlled, the resonance enhancement effect is generated by adjusting the length of the resonant cavity, the external quantum efficiency of the back incidence avalanche photodetector is improved, and the reliability of the back incidence avalanche photodetector is improved. And the responsivity and the rate of the back incident avalanche photodetector are improved.

The invention discloses a 2-micron wave band silicon-based germanium surface incidence type high-speed high-responsivity photoelectric detector, which comprises a p-type doped silicon layer 005, the upper surface of the p-type doped silicon layer 005 is provided with a germanium absorption region 006 and a cathode electrode 011, and the cathode electrode 011 surrounds the germanium absorption region 006; the middle part of the germanium absorption area 006 is provided with a porous resonant cavity array 009, the upper surface of the germanium absorption area 006 is provided with an anode electrode 012, and the anode electrode 012 surrounds the porous resonant cavity array 009. Through direct incidence, a 2-micron optical signal output by an external laser source is input into a germanium absorption region, the optical signal in the germanium absorption region is transversely propagated in the germanium absorption region due to a porous resonant cavity array structure, is finally limited and concentrated in the germanium absorption region, and generates two-photon absorption in the germanium absorption region to generate a free electron hole pair; oriented movement is carried out under external bias voltage loaded through the electrodes, and light current is formed.

The invention relates to a high-speed multi-channel optical receiving assembly, which relates to the technical field of optical transmission and comprises an optical fiber array, a waveguide type photoelectric detector, a trans-impedance amplifier and a connecting substrate, the optical fiber array serves as an optical input port and is used for receiving the multi-channel optical signals and transmitting the multi-channel optical signals to the waveguide type photoelectric detector; the waveguide type photoelectric detector is fixed on the surface of the connecting substrate and is used for converting an optical signal input by the optical fiber array into an electric signal; the light output end of the optical fiber array is directly coupled with the light input waveguide; the transimpedance amplifier is fixed on the surface of the connecting substrate, is connected with an electric signal output end of the waveguide type photoelectric detector through a transmission line, and is used for converting a current signal output by the photoelectric detector into a voltage signal; and the connecting substrate is used for realizing electric interconnection between the waveguide type photoelectric detector and the trans-impedance amplifier. According to the invention, channel expansion of the optical receiving assembly is facilitated, high-efficiency coupling of optical paths is realized, and large bandwidth and high responsivity are realized at the same time.

The invention relates to the technical field of semiconductor photoelectric device test and diagnosis, in particular to an infrared focal plane process diagnosis method based on machine learning, which comprises the following steps of: firstly, collecting photocurrent spectrum data of a plurality of pixel units on a focal plane array, and extracting a spectrum feature vector after preprocessing; secondly, a machine learning model is trained to obtain a performance prediction model, and key spectral features are obtained through feature importance evaluation; and finally, in combination with semiconductor physical simulation, establishing quantitative correlation between the key spectral characteristics and manufacturing process parameters, and completing diagnosis of production process links. The invention also comprises an optimization method. According to the method, spectral deep form information neglected by a conventional method is deeply mined and quantified, high-precision prediction of the response rate of each pixel of the whole focal plane array is realized by constructing characteristics closely related to a device microscopic physical mechanism, and correlation between spectral characteristics and process structure parameters is established, so that the accuracy of the device is improved. And the performance optimization and the process rapid iteration of the infrared detector chip are guided.

The invention discloses a MoTe2 / Bi < 0.5 > Sb < 1.5 > Te3 heterojunction thin film and application thereof in broadband near-infrared photoelectric detection. The heterojunction thin film is formed by stacking a MoTe2 thin film prepared by magnetron sputtering and a Bi < 0.5 > Sb < 1.5 > Te3 thin film prepared by magnetron sputtering, and the MoTe2 thin film and the Bi < 0.5 > Sb < 1.5 > Te3 thin film are in direct contact to form a heterojunction interface; the preparation method comprises the following steps: putting a cleaned n-Si substrate into a magnetron sputtering instrument, sputtering a MoTe2 film in an inert atmosphere, and carrying out annealing treatment to obtain n-Si / MoTe2; and continuously putting the n-Si / MoTe2 into the magnetron sputtering instrument, sputtering a Bi0. 5Sb1. 5Te3 film on the surface of the MoTe2 film in an inert atmosphere, and carrying out annealing treatment. According to the invention, a self-powered practical device with high responsivity, high specific detection rate, fast response speed and high stability can be obtained.

The invention discloses a method for preparing a dual-band Bi2O2Se / CdS heterojunction photoelectric detector, which comprises the following steps of: preparing a Bi2O2Se nanosheet and a CdS nanobelt by using a chemical vapor deposition method, and then preparing the Bi2O2Se / CdS NBs heterojunction photoelectric detector by using a mechanical transfer method in combination with a photoetching method. The dual-band heterojunction photoelectric detector constructed by the Bi2O2Se nanosheets and the CdS nanoribbons shows excellent light detection performance in visible light of 450 nm and near infrared regions of 1150 nm, and has the advantages of high switch ratio, higher responsivity, higher specific detection rate, high external quantum efficiency and fast response speed. Meanwhile, the Bi2O2Se / CdS heterojunction photoelectric detector disclosed by the invention has high-resolution imaging capability, and has great potential in image sensing and encryption application.

The invention provides a Ga2O3 / Bi2Te3 transverse heterojunction photoelectric detector and a preparation method thereof, and the method comprises the steps: S1, obtaining a Ga2O3 substrate, and carrying out the patterning, photoetching and etching of the Ga2O3 substrate, and obtaining a Ga2O3 active region; s2, depositing a SiO2 protective layer on the Ga2O3 active region, and patterning on the SiO2 protective layer to obtain an ion implantation region exposing the surface of the Ga2O3 active region; s3, single-side Si ion implantation is carried out on the Ga2O3 active region in the ion implantation region, and ion implantation activation annealing is carried out; s4, depositing a first metal electrode on the ion implantation region by using an EBV and stripping technology, and performing ohmic annealing on the first metal electrode; and S5, depositing a Bi2Te3 thin film on the other side, opposite to the ion implantation region, of the Ga2O3 active region by using a magnetron sputtering and stripping technology, and depositing a second metal electrode on Bi2Te3 by using an EBV and stripping technology to obtain the pn transverse heterojunction photoelectric detector with excellent performances such as high light responsivity, high light detection degree, low dark current and high response speed.

The invention discloses a polarization-sensitive narrow-band solar blind self-driven photoelectric detector and a preparation method thereof, and belongs to the technical field of semiconductor photoelectric devices. The detector comprises an n-type conductive single Ga2O3 micron wire, a p-type conductive GaN substrate, a PET substrate and a two-dimensional graphene film. According to the device, Ni / Au alloy is selected as a positive electrode, and a two-dimensional graphene film is used as a transparent window of ultraviolet solar blind light and a negative electrode of the device. By means of built-in potential formed by the n-Ga2O3 / p-GaN heterojunction and a Schottky barrier of Ga2O3 / Graphene, high-sensitivity detection of solar-blind ultraviolet light under the self-driving condition is achieved. The device has relatively high responsivity, specific detection rate and external quantum efficiency. The preparation method comprises the following steps: cleaning the GaN substrate, evaporating the Ni / Au electrode, adhering the PET substrate with the channel, transferring the Ga2O3 micron wire to form the heterojunction, and transferring and curing the graphene electrode. The device has the characteristics of polarization sensitivity and low power consumption, and can be applied to the fields of ultraviolet solar blind band encryption communication and environment monitoring.

The invention discloses a method for preparing a medium-wave infrared bandpass filter, the method comprising the following steps: placing a substrate in a vacuum chamber of a coating machine to heat the substrate; evacuating to below 2×10E‑3Pa; alternately stacking 22 layers of high refractive index film layers and low refractive index film layers on both sides of the substrate to form a main film system and 40 layers of high refractive index film layers and low refractive index film layers to form a secondary film system by a physical vapor deposition method; after forming the main film system and the secondary film system, annealing is performed to complete the preparation of the medium-wave infrared bandpass filter; wherein the medium-wave infrared bandpass filter has a light transmission effect in the wavelength range of 4.5 to 5.0 μm, with an average transmittance of more than 92%, and is highly cut off in the 1 to 4.2 μm and 5.3 to 7.5 μm bands, with an average transmittance of less than 1%. The signal-to-noise ratio can be well improved, the signal strength can be enhanced, and the detector response rate can be improved.

The invention discloses an ultra-sensitive phototransistor based on double photoactivation layers. The photoelectric transistor is composed of a gate electrode (Si), a dielectric layer (HfO2), a light activation ion layer (PbI2), a channel (WSe2) and a source drain electrode (Au) in sequence from bottom to top. The phototransistor shows the advantage of extremely high sensitivity: on one hand, the phototransistor meets the test requirement in an extremely weak light environment, and the light intensity of a dark field detected by the phototransistor is 4 orders of magnitude lower than that of a commercial phototransistor; and on the other hand, the responsivity is four orders of magnitude higher than that of a commercial product. According to the invention, the photoactive ion layer PbI2 is introduced into a traditional photoelectric transistor structure based on a traditional two-dimensional material for the first time, the sensitivity of the device is greatly improved, and a new idea is provided for the development of an extremely dark field detection technology.

The invention provides a photoelectric detection chip and a preparation method thereof, a photoelectric detector and electronic equipment, the photoelectric detection chip comprises a substrate, a first doping layer, a second doping layer, an intrinsic absorption layer, a micro-nano structure, a first electrode and a second electrode, the first doping layer is arranged on the surface of the substrate along the thickness direction of the substrate, and the second doping layer is arranged on the surface of the substrate; the intrinsic absorption layer is located between the first doping layer and the second doping layer, the multiple micro-nano structures are arranged in an array mode in the direction perpendicular to the thickness direction of the substrate, so that at least part of incident light is limited in the intrinsic absorption layer, the absorption efficiency of the intrinsic absorption layer on the incident light is improved, more electrons and holes can be generated conveniently, and the light emitting efficiency is improved. The responsivity of the photoelectric detection chip is improved; meanwhile, the micro-nano structure penetrates through the first doping layer, the intrinsic absorption layer and the second doping layer, so that electrons and holes move in the thickness direction, the transition distance and the transition time of the electrons and the holes are shortened, and the bandwidth of the photoelectric detection chip is improved.

The invention provides a radiation energy measurement method and system, and relates to the technical field of radiation measurement, and the method comprises the steps: generating a driving laser by using a laser, focusing the driving laser, irradiating the focused driving laser on a target material in a vacuum chamber, generating plasma, and emitting extreme ultraviolet radiation; acquiring a trigger signal by using a delay generator, and synchronously starting energy acquisition and spectrum detection according to a set time delay; collecting the extreme ultraviolet radiation through an energy measurement module to obtain first radiation energy data; meanwhile, acquiring extreme ultraviolet radiation spectrum data of the same pulse; calculating a spectrum correction factor based on the spectrum data, and correcting the responsivity coefficient of the energy measurement module in real time; and calculating radiation energy in a preset bandwidth range by using the corrected responsivity coefficient. According to the method, the responsivity of the energy meter can be dynamically corrected by combining the spectrum, and the accuracy and long-term stability of the result are ensured.

The invention discloses a photoelectric detection heterojunction, a photoelectric detection device and a preparation method and application thereof. The photoelectric detection heterojunction comprises a Van der Waals heterojunction formed by stacking a black phosphorus layer and a second-type Weel semimetal material layer. According to the technical scheme provided by the invention, the Van der Waals heterojunction photodetector based on black phosphorus-second class of Weel semimetal (BP-II WSM) is constructed, and the influence of parameters such as different types of II WSM materials, device structures, external electric fields, excitation light wavelengths and energy on device performances such as detection range, responsivity, response speed, quantum efficiency and detection rate is researched. The BP-II WSM Van der Waals heterojunction infrared photoelectric detector which has the excellent performance of giving consideration to broadband response, especially aiming at far infrared bands, being high in room temperature responsivity, high in response speed and the like is obtained.

The invention discloses an MEMS (Micro Electro Mechanical System) thermopile structure and a preparation method thereof, and belongs to the technical field of micro electro mechanical systems, the MEMS thermopile structure is characterized by comprising a substrate, a support film I and a support film II which are arranged in one step, and the support film II is provided with an electrode and a plurality of thermocouple strip groups which are radially arranged from a hot end to a cold end; the thermocouple strip group is curved and comprises a second thermocouple strip, an insulating interlayer and a first thermocouple strip which are sequentially arranged from bottom to top; a structure formed by the support film II, the electrode and the thermocouple strip is covered with an infrared absorption layer and a passivation layer; the second thermocouple strip and the electrode are made of the same material; the tail end of the second thermocouple strip extends downwards and is connected with the tail end of the first thermocouple strip to form a cold end of the thermopile, and the head end is connected with the head end of the adjacent first thermocouple strip to form a hot end of the thermopile; and the tail ends of the first thermocouple strip and the second thermocouple strip of the group of thermocouple strips are respectively connected with the two electrodes. The sensing performance such as the response rate, the linearity and the stability of the MEMS thermopile temperature sensor is improved.

The invention discloses a high-speed photoelectric detector based on a mixed surface plasma slit waveguide and a preparation method of the high-speed photoelectric detector, and belongs to the technical field of integrated optoelectronic devices. Comprising a substrate, a mixed surface plasma slit waveguide, metal gates on the two sides, a Van der Waals heterostructure and metal source and drain electrodes on the two sides. The Van der Waals heterojunction is composed of an upper hexagonal boron nitride layer, a lower hexagonal boron nitride layer and a middle two-dimensional material. According to the invention, the hexagonal boron nitride is used for packaging the two-dimensional material, so that the carrier mobility of the two-dimensional material can be improved, and the photoelectric response of the detector is enhanced; according to the invention, the distance between the metal gate and the optical waveguide is shortened, a transverse electric mode transmitted in the waveguide is regulated and controlled, a hybrid surface plasma slit mode with a strong local area is formed, the interaction between an optical field and a two-dimensional material layer is enhanced, and the responsivity of the detector is remarkably improved; the Fermi level of the two-dimensional material can be dynamically regulated and controlled by introducing the grid bias voltage, the photo-generated current separation efficiency is enhanced, and the responsivity and the signal-to-noise ratio of the detector can be improved.

The invention belongs to the technical field of semiconductor optoelectronic devices, and particularly relates to an optical computing array based on a reverse bias germanium modulator, which comprises a cross matrix formed by crossing a plurality of rows of mutually parallel input optical waveguides and a plurality of columns of mutually parallel output optical waveguides, a photoelectric detector is arranged at the output end of each row of output optical waveguides; a plurality of optical splitters; each germanium modulator corresponds to one crossed waveguide, and the first input end of each germanium modulator is connected with the output end of the optical splitter through a transmission optical waveguide; each light combiner is connected with the output end of the germanium modulator and the output optical waveguide, through the above structure, the computing array which has a thermal compensation mechanism, can reduce light reflection and is high in responsivity is comprehensively provided, and therefore under the condition that frequent switching is met, the computing array has the advantages that the computing efficiency is improved, and the computing efficiency is improved. And a low-power-consumption large-scale integrated calculation array scheme is realized.