846 results about "Low-noise amplifier" patented technology

The invention relates to the technical field of wireless communication, and provides a radio frequency low-noise amplifier which comprises an input matching module, a power amplification module, an output matching module, an RC attenuation module and an RC feedback module, the first end of the first inductor serves as the input end of the output matching module, the first end of the first inductor is connected with the output end of the power amplification module, the control end of the switch and the first end of the first adjustable resistor, and the second end of the first inductor is connected with the first end of the second inductor and the first end of the third capacitor. The output end of the switch is connected with the first end of the first capacitor and the first end of the second capacitor. The second end of the second capacitor is connected with the second end of the first adjustable resistor and the second end of the second inductor and used for being connected with a power supply. The second end of the first capacitor is connected with the second end of the third capacitor and serves as the output end of the output matching circuit. The radio frequency low-noise amplifier is adjustable in gain, low in noise and good in linearity performance.

The invention discloses a noise elimination circuit structure, a low noise amplifier, a chip and electronic equipment. The noise elimination circuit structure comprises an input matching network; a common source stage amplification path connected with the first differential output end of the input matching network, comprising a first common source stage differential amplifier, and outputting an amplified first signal inverted from the radio frequency input signal to the ground; the common-gate amplification path is connected with the second differential output end of the input matching network, comprises a first common-gate differential amplifier and outputs an amplified second signal which is opposite to the radio frequency input signal to the ground; and the output end of the common-source amplification path and the output end of the common-gate amplification path are connected in parallel to form the output end of the noise elimination circuit structure. The common-source amplification path and the common-gate amplification path required by the noise elimination structure are realized by using one amplifier path, the utilization rate of the layout area is improved, the compactness of the layout is realized, and the amplifier can be widely applied to the field of communication or radar.

Methods and devices to improve nonlinearity performance of low noise amplifiers (LNAs) are disclosed. The described methods and devices reduce the capacitive loading of the LNA amplifying devices on the bypass path of the LNAs when operating in the bypass mode. This is performed by decoupling the active devices from ground to put the amplifying devices in a floating state, thus minimizing the impact of the gate-source capacitances of the amplifying devices on the overall linear performance of the LNA operating in the bypass mode.

The invention relates to a folded cascode low noise amplifier. The disclosed low noise amplifiers (LNAs) include a common emitter amplifier (CE-A), a common gate amplifier (CG-A), and various passive devices located in CE-A and CG-A. The CE-A includes an NPN type bipolar junction transistor (BJT) having emitter and collector (E / C) regions, and a base region located between the E / C regions and connected to an input node. The CG-A includes a P-channel field effect transistor (PFET) having source and drain (S / D) regions, a channel region between the S / D regions, and a gate adjacent to the channel region. A drain region of the PFET is connected to the output node. Further, the common inductor, the collector region of the BJT, and the source region of the PFET are connected at an intermediate node. The LNA is implemented on a three-dimensional integrated circuit (3DIC) in which the BJT and the FET are located on different chips and the passive device is located in a back-end-of-line region between the BJT and the FET.

Disclosed is a technology related to a low noise amplifier applied between an RF receiver and an RF switch. A phase difference matching circuit having the same phase difference as a positive gain amplifier is added to an output terminal of an attenuator of a low noise amplifier having a variable gain switching structure. In addition, a variable impedance circuit connected to an output terminal of the positive gain amplifier and an output terminal of a phase difference matching unit to finely adjust the phase difference of each output terminal may be further included.

A disclosed low noise amplifier (LNA) includes a common-emitter amplifier (CE-A), a common-gate amplifier (CG-A) and various passive devices in CE-A and CG-A. CE-A includes an NPN-type bipolar junction transistor (BJT) with emitter and collector (E / C) regions and a base region between the E / C regions and connected to an input node. CG-A includes P-channel field effect transistor (PFET) with source and drain (S / D) regions, a channel region between the S / D region, and a gate adjacent to the channel region. The drain region of the PFET is connected to an output node. Additionally, a common inductor, collector region of the BJT, and source region of the PFET are connected at an intermediate node. The LNA is implemented on a three-dimensional integrated circuit (3DIC) with the BJT and FET on different chips and with passive devices in back end of the line regions between the BJT and FET.

The invention provides a low-noise amplification circuit, a radio frequency front-end module and an electronic terminal.The low-noise amplification circuit comprises an input matching adjustment circuit, a common-source amplification circuit, a first inductor, an inter-stage feedback circuit, a common-gate amplification circuit, an input and output feedback circuit, an output matching adjustment circuit and an output attenuation circuit; the common-source amplification circuit comprises at least two first signal amplification units; each first signal amplification unit comprises a first field effect transistor; the common-gate amplification circuit comprises at least two second signal amplification units; and each second signal amplification unit comprises a second field effect transistor. According to the low-noise amplification circuit, transconductance nonlinearity of devices under different bias signals can be mutually counteracted, so that the linearity fluctuation of the low-noise amplification circuit at different temperatures is optimized, and the linearity of the low-noise amplification circuit is kept basically not to change along with the temperature change.

Aspects of the present disclosure provide a circuit configured to adjust an input impedance of an amplifier such as a low-noise amplifier. In certain aspects, the circuit is coupled to a node, wherein the node is between a first transistor and a second transistor of the amplifier. The circuit may include an inductor and a capacitor coupled in series, wherein the inductor is coupled with one or more load inductors of the amplifier through negative magnetic coupling.

The invention provides a Q / V frequency band large-scale satellite communication load channel optimization method, which comprises a forward input link and a backward output link, and is characterized in that the forward input link comprises a V frequency band multi-beam antenna feed source array, a plurality of input preselectors, a V frequency band low noise amplifier input switch ring and a V / Ka integrated receiver assembly which are connected in sequence; the output end of the V-band multi-beam antenna feed source array is connected with the input end of the V / Ka integrated receiver assembly through a waveguide. The reverse output link comprises a Ka / Q frequency converter, a Q-band channel filter, a Q-band traveling wave tube amplifier, a change-over switch, a Q-band output duplexer or filter and a Q-band feed beam which are connected in sequence, and the output end of the Ka / Q frequency converter is connected to the input end of the Q-band channel filter through a waveguide; and the output end of the Q-band channel filter is directly connected to the input end of the Q-band traveling wave tube amplifier through the waveguide. Therefore, the method is low in link loss, high in space utilization rate and high in feasibility.

The invention provides a container supervision article verification method based on the radio frequency identification technology, and relates to the technical field of container supervision article verification based on the radio frequency identification technology, and the method comprises the steps: transmitting a wireless signal to a tag on the surface of an article through RFID equipment, and enhancing a received reflection signal through a low-noise amplifier, filtering environmental noise by using a band-pass filter, converting a filtered reflected signal into a time domain signal by using an analog-to-digital converter, and extracting frequency domain characteristics by using FFT (Fast Fourier Transform) so as to calculate a waveform characteristic index; establishing a historical fingerprint template library, storing a waveform characteristic index corresponding to each state, setting a dynamic similarity threshold value based on historical data distribution, screening out templates of which the Euclidean distance is smaller than the threshold value and which belong to the same state as candidates, and if the candidate templates are not empty, selecting the state corresponding to the template of which the Euclidean distance is minimum as a judgment result; and if the candidate template is empty, the state is judged to be abnormal, and container opening alarm is triggered.

Front-end architectures for simultaneous transmit and receive operation are provided herein. In certain embodiments, a front-end module includes a bandpass filter, an antenna terminal for connecting to an antenna, a power amplifier, a low noise amplifier, and a plurality of switches for controlling access of the power amplifier and the low noise amplifier to the antenna terminal. The switches are operable in a transmit mode in which the switches connect an input of the power amplifier to the bandpass filter and an output of the power amplifier to the antenna terminal, and a receive mode in which the switches connect the input of the low noise amplifier to the antenna terminal through the bandpass filter.

The invention provides a low-noise amplifier and a radio frequency front-end module, and the low-noise amplifier comprises an input matching circuit, a first-stage power amplification circuit, an inter-stage matching circuit, a second-stage power amplification circuit and an output matching circuit. The inter-stage matching circuit comprises a first inductor, a second inductor and a first capacitor; the second-stage power amplification circuit is of a cascode structure; and the output matching circuit comprises a third inductor and a fourth inductor which are coupled with each other. According to the low-noise amplifier, the high-frequency gain, the in-band gain flatness, the isolation degree, the stability and the output matching bandwidth of the low-noise amplifier can be improved.

The utility model provides a kind of electrostatic discharge protection circuit and low noise amplification module, the electrostatic discharge protection circuit is applied to low noise amplification circuit, the low noise amplification circuit includes input matching circuit and the low noise amplifier of the output end being connected to the input matching circuit;The electrostatic discharge protection circuit includes inductance and resistance;The first end of the inductance is used to connect to the signal input end of low noise amplifier;The first end of the resistance is connected to the second end of the inductance, and the second end of the resistance is grounded.The electrostatic discharge protection circuit in the utility model is connected to the input end of low noise amplifier, and the noise coefficient of low noise amplifier will not be deteriorated, and the performance of low noise amplifier will not be affected, and the input stability of low noise amplifier will not be affected simultaneously.

The utility model relates to the technical field of wireless communication, and provides a low noise amplifier and a radio frequency chip, comprising an input matching circuit, a power amplification circuit and an output matching circuit which are electrically connected in sequence, the power amplification circuit comprises a first MOS tube and a second MOS tube, the grid electrode of the first MOS tube is used as the input end of the power amplification circuit and is connected to the output end of the input matching circuit, the source electrode of the first MOS tube is grounded, the drain electrode of the first MOS tube is connected with the source electrode of the second MOS tube, and the drain electrode of the second MOS tube is used as the output end of the power amplification circuit and is connected to the input end of the output matching circuit; the low-noise amplifier further comprises an inductance switching circuit capable of being combined into different inductance values, and the source electrode of the first MOS tube is connected with the inductance switching circuit in series and then is grounded. According to the low-noise amplifier, switching of various inductance values of the source electrode inductor can be achieved, and higher flexibility is brought to compromise of indexes of low-gain gears.

Circuits and methods for providing ESD protection, particularly for LNAs lacking a DC blocking input capacitor (“capless LNAs”). Novel circuitry provides both improved ESD protection and an improved Noise Figure compared to conventional designs. One embodiment includes an integrated circuit including a voltage source pin and a plurality of low-noise amplifiers lacking a respective DC blocking input capacitor, each of the plurality of low-noise amplifiers including: a voltage source terminal coupled to the voltage source pin, an input terminal configured to receive a signal to be amplified, an output terminal configured to output an amplified version of the received signal to be amplified, an ESD protection circuit coupled to the input terminal and to both the voltage source terminal and a reference potential, and a distributed ESD clamp coupled between the reference potential and a node located between the ESD protection circuit and the voltage source terminal.

The invention relates to the technical field of electronic circuits, in particular to a radio frequency front-end lightning protection circuit and lightning protection equipment. The circuit comprises a primary discharge module, a radio frequency signal protection branch and a direct current power supply protection branch, the input end of the primary discharge module is connected with an antenna port, and the primary discharge module is used for discharging high-energy pulses generated by lightning stroke; the radio frequency signal protection branch is connected between the output end of the primary discharge module and a low noise amplifier of the radio frequency receiving link, and is used for coupling a radio frequency signal to the low noise amplifier and carrying out isolation and voltage limiting on a lightning stroke residual pulse; the direct current power supply protection branch circuit is connected between the output end of the primary discharge module and a power supply voltage stabilizer of the direct current power supply link, and is used for transmitting a direct current power supply to the power supply voltage stabilizer and carrying out isolation and voltage limiting on the lightning stroke residual pulse. The circuit can be combined with a radio frequency front end and used for a navigation antenna, and the lightning stroke protection capability is improved.

Device structures and fabrication methods for MOSFETs having a novel multiple-conductive layer “T”-shaped gate (as viewed in cross-section). The novel “T-gate” significantly decreases the gate resistance RG of a MOSFET device and thus increases the figure-of-merit fMAX (the maximum device oscillation frequency, or the frequency at which the maximum power gain equals unity) and reduces the noise factor (NF) of the device. Fabrication of the novel MOSFET devices may be readily integrated into existing IC fabrication processes, and such MOSFETs may have gate lengths Lg scaled below the lithographic capabilities of the fabrication process. Some embodiments include conformal gate side-spacers. Some embodiments include non-conformal air-gapped gate side-spacers that result in reduced parasitic gate-to-source capacitance CGS and gate-to-drain capacitance CGD, with concomitant improved performance at high radio frequencies (RF). Embodiments of the novel MOSFET device enable RF circuits, such as low-noise amplifiers (LNAs), to exhibit a better noise figure parameter, NFmin.

Apparatus and methods for power amplifier signal limiting are disclosed. In certain embodiments, a front-end system includes a low noise amplifier that amplifies a radio frequency receive signal during a receive frame, a power amplifier that amplifies a radio frequency transmit signal during a transmit frame, and a signal limiter operable to limit a signal power of the power amplifier in an attenuating mode. The signal limiter includes a radio frequency detector configured to generate a detection signal based on detecting a power level of the radio frequency transmit signal, and a latch that locks the signal limiter in the attenuating mode in response to activation of the detection signal. The latch is reset by a bias signal of the power amplifier that is activated during the transmit frame and deactivated during the receive frame.

The invention relates to a sweep frequency optical frequency comb generation system and a generation method. Fourier mode locking is realized through a Fourier mode locking photoelectric oscillator system. The sweep frequency optical frequency comb generation system is a closed Fourier mode-locked laser loop which is composed of a first optical amplifier, an optical fiber isolator, a broadband filter, a polarization controller, a thin film lithium niobate optical chip, a signal generator, a dispersion compensation optical fiber and a first optical coupler; and a photoelectric oscillator loop is formed by a second optical coupler, a single-mode delay optical fiber, a second optical amplifier, a photoelectric detector, a narrow-band filter, a low-noise amplifier and an electric power divider. Time domain active mode locking and Fourier mode locking are carried out on the laser resonant cavity at the same time, synchronous modulation of multiple optical frequency comb modes is achieved, sweep frequency optical frequency comb signals with high repetition frequency, high modulation speed, high coherence length and high output power are generated, and tunable optical frequency comb and high-quality high-frequency microwave signal output can be provided at the same time.

The invention provides a radio frequency front-end circuit, a radio frequency receiving device and electronic equipment. The radio frequency front-end circuit comprises a first integrated filter, a first discrete combiner, an integrated noise amplifier and an integrated receiving chip; the first integrated filter receives a first sub-signal of a first frequency band and a second sub-signal of a second frequency band in the original radio frequency signal through which the original radio frequency signal passes, and filters out signals of other frequency bands; the first discrete combiner receives the first sub-signal and the second sub-signal and combines the first sub-signal and the second sub-signal into a first combined signal; the integrated low-noise amplifier performs low-noise amplification on the first combined signal to obtain a second combined signal, wherein the second combined signal comprises a third sub-signal of the first frequency band and a fourth sub-signal of the second frequency band; the integrated receiving chip is provided with a first receiving pin and a second receiving pin, the first receiving pin is used for receiving the third sub-signal, and the second receiving pin is used for receiving the fourth sub-signal. According to the radio frequency front-end circuit, the number of integrated devices can be reduced, and the cost is reduced.

An electronic device may include wireless circuitry with a processor, a transceiver circuit, a front-end module, and an antenna. The front-end module may include amplifier circuitry such as a low noise amplifier for amplifying received radio-frequency signals. The amplifier circuitry may include non-linearity suppression circuitry that suppresses or reduces non-linear behavior of components such as a core amplification transistor and a degeneration inductor within the amplifier circuitry. The non-linearity suppression circuitry may include an intermodulation distortion suppression circuit having an auxiliary amplification transistor. The non-linearity suppression circuitry may include a frequency-selective filter coupled to the degeneration inductor.

An LNA with inductive source degeneration provided by a degeneration network is presented. The degeneration network includes an inductor in parallel with a stability compensation network for provision of unconditional stability with reduced effect on in-band performance of the LNA. The stability compensation network includes an RLC network comprising a resistor, an inductor and a capacitor in series connection. According to one aspect, a resonant frequency provided by the series-connected inductor and capacitor is selected based on a known frequency of instability. Values of the resistor, inductor and capacitor are iteratively derived based on an optimization routine with criteria that includes a magnitude of the μ-factor. The criteria further include an in-band RF performance of the LNA. According to another aspect, initial values of the inductor and capacitor are selected for an initial value of the resonant frequency to be equal to about 10× the in-band frequency.

An analog frontend architecture for a capacitive pressure sensor. The analog frontend architecture includes a low-noise amplifier unit for low-noise amplification of sensor signals of the capacitive pressure sensor, the low-noise amplifier unit including a first integrator unit and a second integrator unit, the first integrator unit being connected to input terminals of the low-noise amplifier unit, being designed as a boxcar integrator, and being configured to amplify sensor signals of the capacitive pressure sensor according to the boxcar integration technique, and the second integrator unit being connected to output terminals of the low-noise amplifier unit and being configured to integrate the amplified voltage signals of the first integrator unit.

A radio-frequency module includes one or more first electronic components disposed on one main surface and one or more second electronic components disposed on another main surface. The one or more first electronic components include at least one of a filter whose passband includes a first band, a switch connected to the filter, a power amplifier connected to the filter, and a switch connected to the filter. The one or more second electronic components include at least one of a filter whose passband includes a second band in which the frequency of a harmonic wave of a signal in the first band is included, a switch connected to the filter, a low-noise amplifier connected to the filter, and an inductor connected to a path that forms a connection between the first low-noise amplifier and an antenna connection terminal.

The invention relates to the technical field of radio frequency front-end modules, in particular to a multi-band adaptive control system for a radio frequency front-end module, and the system comprises a substrate which is integrated with a low-noise amplifier and a power amplifier; the sensing unit is used for collecting real-time operation data of the power amplifier, and the real-time operation data at least comprise temperature data and output power data; the inter-stage matching network is connected between the low-noise amplifier and the power amplifier; the output matching network is connected with the output end of the power amplifier; and the main control unit is respectively connected with the sensing unit, the inter-stage matching network and the output matching network, and the main control unit is used for coordinating task scheduling and control signal issuing of each unit. The radio frequency front-end module has the effect of reducing the size of the radio frequency front-end module while realizing unified coordination and adjustment of control.

The invention discloses an automatic temperature compensation traveling wave low-noise amplifier and a chip, and belongs to the technical field of low-noise amplifiers. The amplifier comprises a plurality of high-frequency attenuation amplification modules which are connected in parallel, a grid electrode absorption load, a grid voltage temperature compensation bias module, a drain electrode absorption load and a drain voltage temperature compensation bias module. According to the low-noise amplifier, automatic temperature compensation at different temperatures is achieved, the change of the gain and the noise coefficient of the amplifier along with temperature fluctuation is reduced, and the stability of the amplifier is improved; according to the low-noise amplifier, an additional temperature compensation circuit module is not needed, the system integration degree is improved, the redundant design of equipment is reduced, and therefore the reliability of the equipment is improved; according to the low-noise amplifier, the high-frequency attenuation module effectively reduces gain fluctuation, and the high-frequency stability of the circuit is improved.

This disclosure provides a communication system comprising a first branch and a second branch. The first branch includes a transmit chain and a reference chain. The transmit chain includes a DPD, a DAC, a frequency mixer, a power amplifier (PA), a circulator, a filter, and a first antenna array that are sequentially connected. The second branch includes a receive chain comprising a second antenna array, a low noise amplifier, a frequency mixer, and an ADC that are sequentially connected. In an SBFD slot, the transmit chain is configured to perform downlink radio frequency transmission on a baseband signal; the receive chain is configured to perform uplink radio frequency transmission on a radio signal; and the reference chain collects a radio frequency signal output by the PA, uses the radio frequency signal as a reference signal, and performs linear cancellation processing on a received signal output by the receive chain.

The invention discloses an interphone power saving method and device for dynamically adjusting a low noise amplifier working point, and the method comprises the following steps: S1, periodically collecting a digital intermediate frequency signal in a receiving stage, and calculating a first parameter and a second parameter, the first parameter being a current received signal strength indication value, and the second parameter being a current signal-to-noise ratio estimation value; s2, when the first parameter is higher than a first threshold value and the second parameter is higher than a second threshold value, it is judged that a low-power-consumption access condition is met; s3, when N continuous cycles all meet the low-power-consumption access condition, the baseband processor outputs a first control signal, and the bias working point of the low-noise amplifier is switched to a low-power-consumption mode; and S4, in a low-power-consumption mode, if the first parameter is lower than a third threshold value or the second parameter is lower than a fourth threshold value, outputting a second control signal, and switching the bias working point of the low-noise amplifier to a high-performance mode, thereby solving the problem of high static power consumption of the interphone receiving link on the premise of ensuring the communication reliability.

The invention discloses a single-power-supply ultra-wideband temperature compensation low-noise amplifier circuit, and belongs to the technical field of radio frequency microwaves. The circuit is mainly composed of a pre-stage low-noise amplifier module, an inter-stage temperature compensation equalization module and a post-stage driving amplifier module. The temperature compensation equalizer module generates differential voltage related to temperature through a three-stage gallium arsenide diode temperature sensing unit, outputs a control signal through an enhanced FET differential amplification circuit, drives a voltage-controlled attenuation equalizer to dynamically adjust the attenuation amount of a radio frequency signal, and achieves gain stability in a frequency band. Through the collaborative design of a blocking capacitor and a divider resistor, the grid bias of an FET switch is strictly limited in a transconductance linear adjustment interval, and the interval covers 80% of the effective range of the threshold voltage of a gallium arsenide FET tube. The circuit is powered by a single power supply + 5V, stable work of each module is ensured through active bias and a power supply filter network, and the circuit is suitable for extreme temperature environments such as high-frequency communication and radar.

The invention discloses a defect coupling low-noise amplifier. The low-noise amplifier solves the problem that the performance of a low-noise amplifier in the prior art is influenced by a grid source inductance coupling coefficient. Forward coupling of an input inductor and a grid inductor and reverse coupling of the input inductor and a source inductor are achieved through a unique defect coupling transformer matching network, meanwhile, reverse coupling of a grid inductor and the source inductor is achieved, and the coupling coefficient of the grid-source inductor is reduced through coupling counteracting inductance; by combining a differential common-source transconductance amplification stage, a four-order magnetic coupling resonance unit, a differential transconductance amplification stage with a neutralizing capacitor and an output transformer matching network, the characteristics of high gain bandwidth and low noise are realized; simulation and actual tests verify that the low-noise amplifier can effectively reduce the noise coefficient and broaden the input matching range, has good compatibility and wide application prospects based on a conventional integrated circuit production process, can be applied to a phased array system, and can also form a receiver system with other circuits.