The invention relates to quantitative detection of a
semiconductor wet
etching solution, in particular to a near-
infrared detection method for the content of acid and
ammonium acid in an organic
system, which comprises the following steps: carrying out uniform formula design on a modeling sample, and calculating the content of acid and
ammonium acid in the modeling sample by applying a basic principle of a stoichiometric method through a partial least square method. The method for quantifying the
mass fractions of the acid and the acid
ammonium in the organic
system is formed by associating near
infrared spectrum data of a sample with the
mass fractions of the acid and the acid ammonium through spectrum pretreatment, analysis waveband selection, determination of
optimal modeling parameters such as the optimal number of main factors and a root-mean-
square error (RESECV) of
cross validation and the like and establishing a model. Compared with a traditional
titration method and a gas-phase liquid-phase detection method, the method has the advantages that the time consumption is long (more than 15 minutes) and the precision is poor (more than 0.5%), the interference of similar structures of acid and acid ammonium can be effectively eliminated, and the detection precision is within 0.05%; moreover, the quantity of modeling samples required by the method is only 25-35, so that the modeling
workload (the quantity of general near-
infrared modeling samples is 100-300) is reduced, and the requirements on accuracy and high efficiency of product content inspection can be met.