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203results about How to "Reduced series resistance" patented technology

Silver conductive paste used for positive electrode of solar battery and preparation technique thereof

The invention provides a silver conductive paste used for positive electrode of solar battery and a preparation technique thereof. The paste comprises silver powder, glass powder, an organic carrier and an additive, wherein the silver powder accounts for 65 to 85 percent of the total weight of the paste and consists of two types of silver powder with different particle sizes; the first type of silver powder has the particle size range of 3 to 15 micrometers and is spherical; the second type of silver powder has the particle size range of 0.1 to 3 micrometers and is spherical; the first type of silver powder accounts for 20 to 50 percent of the total silver powder; the glass powder is of Pb-B-Si-Zn-Ti-Al-O series and accounts for 1 to 10 percent of the total weight of the paste; the organic carrier accounts for 10 to 20 percent of the total weight of the paste; and the additive accounts for 0.1 to 3 percent of the total weight of the paste, and consists of BaO powder and CaO powder. The silver powder with different particle size ranges is mutually filled, thus greatly improving the electrical property of the electrode and improving the photoelectric conversion efficiency of the battery. In addition, the invention can ensure good ohmic contact between the paste and a substrate.
Owner:CENT SOUTH UNIV

High-conductivity lead-free silver paste used for crystalline silicon solar cell and preparation method thereof

The invention discloses a high-conductivity lead-free silver paste used for a crystalline silicon solar cell and a preparation method thereof. The high-conductivity lead-free silver paste is prepared by compounding nano silver powder and micro silver powder, wherein a silver electrode formed by performing optimized grading and sintering on the micro silver powder has extremely high conductivity. The nano-modified high-conductivity lead-free silver paste comprises the following components in percentage by weight: 8 to 9 percent of micro silver powder with the grain diameter of 2 to 4.5 mu m, 56 to 62 percent of micro silver powder with the grain diameter of 5 to 10 mu m, 5 to 10 percent of nano silver powder, 3 to 5 percent of glass cement, 3 to 5 percent of inorganic additive, and 15 to 20 percent of organic carrier, wherein the grain diameter of the nano silver powder is 20 to 70 nm; the glass cement is a bismuth-silicon-boracium mixed glass system; and the organic carrier consists of an organic solvent and an organic additive. The high-conductivity lead-free silver paste has a simple preparation process, is simple and easy to produce in large scale, and has practical significance of improving the photoelectric conversion efficiency of the crystalline silicon solar cell.
Owner:NANCHANG UNIV

Polarization doping-based GaN Schottky diode

The invention discloses a polarization doping-based GaN Schottky diode, and belongs to the field of semiconductor devices. The diode comprises a semi-insulated substrate layer used for supporting the overall GaN Schottky diode, a highly doped N+ type GaN layer grown on the substrate layer, and an N- type AlxGa1-xN (x is greater than 0 and less than or equal to 1) layer which is grown in the N+ type GaN layer by adopting polarization doping; and the component Al of the N- type Al[x]Ga[1-x]N (x is greater than 0 and less than equal to 1) layer is distributed non-uniformly from the interface of the N+ type GaN layer. An ohmic contact electrode and a Schottky contact electrode are also arranged on the diode. According to the polarization doping-based GaN Schottky diode, the N- type AlxGa1-xN (x is greater than 0 and less than or equal to 1) layer is grown on the N+ type GaN layer in a polarization doping mode, so that the mobility of a GaN material is improved, the serial resistance of the Schottky diode is reduced, and the working frequency of the Schottky diode is improved; therefore, the working frequency and the output power of a frequency multiplier circuit in the range of millimeter wave and terahertz are improved. In the polarization doping mode, the capacitance variation ratio of the Schottky diode can be controlled effectively and the Q value of a device can be improved.
Owner:THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP

Crystalline silicon solar cell capable of realizing double-side light entrance and preparation method therefor

A crystalline silicon solar cell capable of realizing double-side light entrance and a preparation method therefor are disclosed. The crystalline silicon solar cell comprises a metal grid line I, a transparent conductive oxide antireflection conductive layer, a doped silicon based thin film emitting electrode layer, an intrinsic silicon based thin film passivating layer, a crystal silicon wafer, a doped crystalline silicon thin film back surface field layer, a passivating antireflection layer and a metal grid line II. The preparation method comprises the steps of cleaning and texturing firstly, then preparing the doped crystalline silicon thin film back surface field layer, the passivating antireflection layer and the metal grid line II in sequence; then cleaning the surface, of the crystal silicon wafer, where the emitting electrode is positioned, then preparing the intrinsic silicon based thin film passivating layer, the doped silicon based thin film emitting electrode layer, the transparent conductive oxide antireflection conductive layer and the metal grid line I in sequence. The crystalline silicon solar cell has the advantages of capability of realizing double-side light entrance, high open-circuit voltage and good low light effect; the series resistance of the solar cell is further reduced, the consumption of valuable raw materials is reduced, and the cost is reduced; and in addition, the preparation method is suitable for large-scale production, capable of reducing the cost of the production equipment, and is expected to improve the stability and the yield of the products.
Owner:江西昌大高新能源材料技术有限公司

Conductive paste for solar cell and preparation method thereof

The invention provides a conductive paste and a preparation method thereof. The conductive paste comprises aluminum powder, an inorganic binding agent, an organic carrier and metal-glass composite powder, wherein the metal-glass composite powder is of nano-particles and a core-shell structure, glass is used as a core material, and metal is used as a shell material. The conductive paste disclosed by the invention is good in storage stability and less prone to sedimentation and agglomeration, and the conductive paste is less prone to leakage from a screen during screen printing; after sintering, an aluminum film is smooth in surface and grey white, and has no aluminum vesicles or aluminum beads; and furthermore, the part in contact and superimposition with a back silver electrode, of the aluminum film is wiped by a non-dust cloth, and wiping traces and powder dropping can be avoided. The series resistance of the produced solar cell is reduced obviously, a filling factor is increased obviously, and the average photoelectric conversion efficiency of a monocrystalline silicon cell piece can be above 18.20%. Simultaneously, the conductive paste disclosed by the invention is good in construction performance, a film layer formed after sintering is compact, the sintering thickness is uniform, the bending of a silicon chip is small, the sheet resistance is small and the open circuit voltage (Voc) of the formed cell is high.
Owner:BYD CO LTD

Inversed organic thin-film solar cell and manufacturing method of inversed organic thin-film solar cell

The invention discloses an inversed organic thin-film solar cell and a manufacturing method of the inversed organic thin-film solar cell. The inversed organic thin-film solar cell structurally and sequentially comprises a substrate, a transparent electric conduction cathode ITO, a cathode buffer layer, an optical activity layer, an anode buffer layer and a metallic cathode from bottom top top. Transparent electric conduction nano-particles are added in the anode buffer layer. The manufacturing method includes the steps of forming a substrate body through the substrate and the transparent electric conduction cathode ITO, washing and drying the base plate, manufacturing the cathode buffer layer on the surface of the transparent electric conduction cathode ITO, manufacturing and baking the optical activity layer on the surface of the cathode buffer layer, manufacturing the anode buffer layer on the surface of the optical activity layer, conducting annealing on the substrate body, and plating the anode buffer layer with the metallic cathode in an evaporation mode. High conductivity and high reflectivity of the transparent electric conduction nano-particles are used, the electron transmission rate and the light reflection rate of a traditional anode buffer layer are strengthened, the absorptivity of the optical activity layer to sunlight is improved, the light current density and the carrier transmission efficiency of the organic thin-film solar cell are accordingly improved, the series resistance of the cell is reduced, and the photoelectric conversion efficiency of a device is improved.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Preparation method of double-side power generation heterojunction solar cell

The invention discloses a preparation method of a double-side power generation heterojunction solar cell. The method comprises that a) two sides of an N type silicon chip are textured to form pyramid suede; b) a first intrinsic amorphous silicon thin film layer and an N type amorphous silicon thin film layer are deposited at one side of the textured N type silicon chip, and a second intrinsic amorphous silicon thin film layer and a P type amorphous silicon thin film layer are deposited at the other side; c) transparent conductive thin film layers are deposited on the N type amorphous silicon thin film layer and the P type amorphous silicon thin film layer respectively; d) metal layers are deposited on the transparent conductive thin film layers at the two sides of the N type silicon chip; e) metal grid-line electrodes are formed on the metal layers at the two sides of the N type silicon chip; and f) metal layers beyond a metal-grid line electrode area are removed. According to the method, low-temperature metal makes good contact with transparent conductive films, high-molecular shielding layers in the edges of metal grid lines can be removed, the serial connection resistance of the cell can be reduced, effective absorption light of the solar cell is increased, and further, the conversion efficiency is improved.
Owner:GS SOLAR CHINA COMPANY

Back-contact back-junction solar battery three-dimension electrode and manufacturing method thereof

The invention discloses a back-contact back-junction solar battery three-dimension electrode and a manufacturing method thereof. The back-contact back-junction solar battery three-dimension electrode comprises a plurality of negative electrode grid lines printed and sintered on n+areas on the back face of a battery, a plurality of positive electrode grid lines which are printed and sintered on p+areas on the back face of the battery and are arrayed with the negative electrode grid lines in a cross finger shape and in a staggered mode, insulating printing ink printed and dried on the positive electrode grid lines and the negative electrode grid lines, and positive main grid electrodes and negative main grid electrodes printed and dried on positive electrode grid lines with insulating printing ink and the negative electrode gird lines with insulating printing ink. The positive main grid electrodes are isolated with the negative electrode grid lines through the insulating printing ink, and the negative main gride electrodes are isolated with the positive electrode grid lines through the insulating printing ink. The back-contact back-junction solar battery three-dimension electrode and the manufacturing method thereof reduce the distance of current carriers transmitted from thin grid electrodes to main grid electrodes, reduce the series resistance of the battery, and reduce electrode sedimenting difficulty and the composite speed rate in positions of the main gride electrodes.
Owner:HEFEI HAREON SOLAR TECH

Super capacitor device containing millet-husk-based porous active carbon material

InactiveCN106276888ALow ashLow wettability of the surfaceHybrid capacitor electrodesMicrowave methodFiltration
The invention discloses a super capacitor device containing a millet-husk-based porous active carbon material. The millet-husk-based porous active carbon material is prepared by uniformly mixing dried millet husks and an activator, performing carbonization and activation with a microwave device in the protection of an inert gas, adding distilled water to obtained black powder for suction filtration washing till the pH value is 6.4-7, and performing drying to obtain black powder. The black powder is the prepared millet-husk-based porous active carbon material. The millet-husk-based porous active carbon material (an active substance) prepared through the microwave method is mixed with a binder according to a certain mass ratio, distilled water is added for mixing to prepare a thick liquid, and the thick liquid is repeatedly rolled to obtain a sheet electrode material. The electrode material is put on a current collector with the corresponding size, cold pressing is carried out at 1-40 Mpa for 10-200 s, and drying is performed at 120 DEG C to obtain an electrode plate of the super capacitor device. The electrode material in the electrode plate is more than 14 mg per square centimeter. An electrode plate, a membrane, and an electrode plate are assembled into a sandwich structure, then different electrolytes are dropwise added, so that the super capacitor device is assembled.
Owner:YANGZHOU UNIV

Method for preparing Ge photoelectric detector with transverse p-i-n structure

The invention discloses a method for preparing a Ge photoelectric detector with a transverse p-i-n structure, and relates to the germanium photoelectric detector. The method comprises the steps of (1) carrying out epitaxial growth of a monocrystalline germanium layer on a substrate, growing a SiO2 covering layer on the monocrystalline germanium layer, (2) using a micro-electronics photolithography to etch an active area platform surface of a long and thin strip shape on the epitaxial monocrystalline germanium layer, (3) using the SiO2 covering layer on the monocrystalline germanium layer for masking, forming a doped p area and a doped n area on the two sides of the platform surface respectively through sidewise large-declination ion implantation, (4) carrying out thermal annealing after deposition of a metal Ni layer, forming NiGe contact electrodes and NiSi contact electrodes on the two sides of the platform surface and the bottom of the etched area through a self-alignment technology used in the forming process of NiGe and NiSi, and (5) leading out the device electrodes, and protecting a passivating layer. Therefore, the Ge photoelectric detector with the transverse p-i-n structure is obtained. The technology is simple, operability is high, and high application value is achieved.
Owner:XIAMEN UNIV

Thin-film photoelectric conversion device

This invention intends to develop a technique for forming an interlayer with excellent optical characteristics and to provide a photoelectric conversion device having high conversion efficiency. To realize this purpose, a series connection through an intermediate layer is formed in the thin-film photoelectric conversion device of the invention, and the interlayer is a transparent oxide layer in its front surface and n pairs of layers stacked therebehind (n is an integer of 1 or more), wherein each of the pair of layers is a carbon layer and a transparent oxide layer stacked in this order. Film thicknesses of each layer are optimized to improve wavelength selectivity and stress resistance while keeping the series resistance.
An embodiment of the photoelectric conversion device is characterized in that; a transparent insulating substrate is located on the light incidence side, and a transparent conductive layer, at least one photoelectric conversion unit, a transparent electrode layer having electrical conductivity as typified by zinc oxide, a hard carbon layer having electrical conductivity as typified by diamond-like carbon, and a high reflecting electrode layer are stacked in this order on an opposite surface from a light incidence side of the transparent insulating substrate.
Owner:KANEKA CORP
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