38results about How to "Increase the conductive cross-sectional area" patented technology

The invention discloses a process for manufacturing a solar cell by twice screen printing and grooving, which is used for manufacturing the solar cell by twice electrode printing and comprises a grooving process and a twice printing process, wherein the grooving process comprises the step of performing grooving on an electrode grid line area on the surface of a silicon wafer so as to form an etched groove in the electrode grid line area; and the twice printing process comprises the following steps of: a, primary electrode printing, namely, filling printing electrode paste into the etched groove and performing drying to form a first layer of electrode in the etched groove; and b, secondary electrode printing, namely, printing the electrode on the outer surface of the first layer of electrode so as to form a second layer of electrode in the electrode grid line area on the surface of the silicon wafer. The solar cell manufactured by the method has relatively lower series resistance, a selective emitter and relatively higher conversion efficiency, and can reduce shading loss; and the electrode paste is difficult to spread in a sintering process.

The invention discloses a method for manufacturing a high-performance double-layer polysilicon bipolar transistor. The method comprises the following steps that 1), LOCOS and CVD are adopted to deposit SiO2 to form a composite isolation structure, and high-temperature process time is reduced; 2), the SiO2 is used as an etching stopping layer of base polysilicon, and etching damage is avoided; 3), a composite side wall structure is formed through SiO2 and N+polysilicon, and emitter resistance is reduced. The method has the advantages that on the premise of not lowering the isolation effect, the high-temperature process time is reduced, therefore, a relatively thin epitaxial layer can be adopted, the better microwave performance is obtained, SiO2 is adopted as the etching stopping layer, the etching damage to the silicon epitaxial layer is eliminated, breakdown characteristics are improved, current amplifying coefficients are increased, and noise coefficients are reduced. The composite side wall structure with SiO2 and N+polysilicon is adopted, it can be guaranteed that emitter-base electric isolation is carried out, and meanwhile the emitter resistance is lowered, the current amplifying coefficients are increased, and the noise coefficients are reduced.

The invention provides a cross-connection electrode for an internal thermal serial graphitization furnace and a production method thereof. The cross-connection electrode is prepared from a dry material composed of large-grained petroleum based needle coke, medium-grained petroleum based needle coke and small-grained powder, a binding agent, additives, green ground components and roasted ground components through crushing, screening, mixing, kneading, shaping, roasting, dipping, graphitizing, processing and assembling, wherein the formula is as follows: the percentage of the large-grained petroleum based needle coke is 30-40%, the percentage of medium-grained petroleum based needle coke is 20-30%, the percentage of small-grained powder is 35-45%, the content of the binding agent is 25-30% of the total weight of the dry material, the content of the additive stearic acid is 0.5-0.8% of the total weight of the dry material, the content of the additive Fe2O3 is 0-1% of the total weight of the dry material, the content of the green ground components is 10-20% of the total weight of the dry material and the content of the roasted ground components is 0-10% of the total weight of the dry material; the binding agent is modified asphalt, and the grain size of the large-grained petroleum based needle coke is 15-25mm, the grain size of the medium-grained petroleum based needle coke is 5-15mm and the small-grained powder is 200-mesh powder.

Provided are a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a substrate, an epitaxial layer, and a gate electrode structure. The epitaxial layer is disposed on the top of the substrate and comprises multiple first trenches and multiple second trenches which are arranged alternately in the first direction. The epitaxial layer between each pair of the first trench and the second trench which are adjacent comprises a first doped region and a second doped region which have different conductive types. An interface between the each first doped region and the corresponding second doped region forms a super junction structure. The epitaxial layer under the gate electrode structure comprises a channel extending in the second direction vertical to the first direction. Compared with a product in the prior art, the semiconductor device is increased in driving current gate-on sectional area, improved in driving current, and decreased in gate-on resistance.

The embodiment of the invention provides a connector plug and socket, and the plug comprises eight plug terminals at the upper row of the plug and eight plug terminals at the lower row of the plug, wherein the eight plug terminals at the upper row of the plug and the eight plug terminals at the lower row of the plug respectively comprise four plug power terminals. Each plug power terminal comprises a first contact part and a second contact part, wherein the length of the first contact part is greater than the length of the second contact part. The socket comprises eight socket terminals at the upper row of the socket and eight socket terminals at the lower row of the socket, wherein the eight socket terminals at the upper row of the socket and the eight socket terminals at the lower row of the socket respectively comprise four socket power terminals. The width of each socket power terminal from the central part to the rear part is greater than the width of the front part of the socket power terminal, thereby increasing the contact area of the socket power terminals with the plug power terminals, further increasing the area of the conductive section of the socket and the plug, improving the current-passing capability of a connector, and meeting the demands of a large current.

The invention discloses an aluminum electrolysis anode hollow aluminum pouring steel claw. A hollow steel claw steel shell is included. An aluminum guide rod connecting plug is arranged at the upper end of the hollow steel claw steel shell. A steel claw beam is arranged at the lower end of the hollow steel claw steel shell. A set of steel claw feet are arranged at the lower end of the steel claw beam. The steel claw beam and the steel claw feet are each of a hollow structure. An aluminum core is poured into the aluminum guide rod connecting plug on the hollow steel claw steel shell, the steelclaw beam and the steel claw feet. By means of the aluminum electrolysis anode hollow aluminum pouring steel claw, the electrical resistivity of an anode guide rod and the steel claw is reduced, electrical losses are reduced, the production cost is reduced, and the beneficial effect that the integral mechanical strength is high is achieved.

The invention provides a glass-fiber and film wrapped all-insulated squared aluminum strand wire with small overall dimension change. The glass-fiber and film wrapped all-insulated squared aluminum strand wire comprises a rectangular strand wire, an insulating layer and a glass fiber yarn wrapping layer, wherein the rectangular strand wire is formed by layered arrangement and transposition of a plurality of round aluminum wires; aluminum wire insulating films coat outer layers of the round aluminum wires; the insulating layer comprises a first insulating film layer and a second insulating film layer; the first insulating film layer coats the outer side of the rectangular strand wire; the second insulating film layer coats the outer side of the first insulating film layer; the glass fiber yarn wrapping layer coats the outer side of the second insulating film layer, and comprises a first insulating paint layer, a first glass fiber yarn layer, a second insulating paint layer, a second glass fiber yarn layer and a third insulating paint layer; the first insulating paint layer coats the outer side of the second insulating film layer; the first glass fiber yarn layer coats the outer side of the first insulating paint layer; the second insulating paint layer coats the outer side of the first glass fiber yarn layer; the second glass fiber yarn layer coats the outer side of the second insulating paint layer; the third insulating paint layer coats the outer side of the second glass fiber yarn layer; and the wrapping direction of the first glass fiber yarn layer is opposite to that of the second glass fiber yarn layer.

A resonant high current density transformer including two cores that are abut against each other with their first and second side posts on two sides thereof. A first bobbin envelops the first side posts on the same side of the two cores. A side plate is provided on either end of the first bobbin. The space between the two side plates is divided into two coil slots with a spacer, and at least a wire is wound in each coil slot to form a primary winding. A further second bobbin envelops the second side posts on the same side of the two cores. The outer periphery of the second bobbin is divided into two winding regions by another spacer, and a metal plate envelops each of the winding regions to form a secondary winding. A bobbin mount is disposed at the external flank of the second bobbin with a barrier plate at a side thereof for separating the first and the second bobbins. An insulating separating cover is provided on a side of the first bobbin closer to the bobbin mount, and the two ends of the separating cover cover the top and bottom sides of the first bobbin, respectively.

The invention provides a motor with a novel reversing structure. The motor comprises a stator, a rotor, a commutator and a brush. The disc-shaped commutator is mounted on the rotor, the outer end surface of the commutator is in contact with one end of the brush, the other end of the brush extends along the non-radial direction of the commutator, and the brush is connected to a power source. By adopting the technical scheme, the contact area between the brush and the commutator is increased, the conductive cross-sectional area which the electric energy can flow is larger, the reversing reliability is improved, the noise during running of the motor is reduced, the brush and the commutator are in close contact under the action of the brush, and the reversing reliability is further improved. In addition, components inside the motor casing are more easily arranged, the brush is connected to the power source through a wire extending from the end surface of the motor casing. For a motor manufacturer, the motor is more convenient to assemble, an armature line inserting and welding process is also relatively simple, and the cost for the motor manufacturing enterprise is reduced.

The invention discloses a heavy-current moving contact structure, and relates to the technical field of electric power. The heavy-current moving contact structure comprises two first moving contact connecting plates, two second moving contact connecting plates, first connecting sheets and second connecting sheets, and the opposite surfaces of the two first moving contact connecting plates are fixedly provided with the first connecting sheets and the second connecting sheets, and the opposite surfaces of the two second moving contact connecting plates are fixedly connected with the opposite surfaces of the two first connecting sheets and the two second connecting sheets respectively. Conductive contact plates are formed by bending the second connecting sheets and are matched with third conductive contact points, so that an effective conductive contact point is additionally arranged at the back ends of the first moving contact connecting plates and the second moving contact connecting plates, and meanwhile, second conductive contact points are additionally arranged at the front ends of the first moving contact connecting plates and the second moving contact connecting plates, therefore, the overall conductive sectional area is increased, and larger load current can be borne.

The invention discloses a ground insertion wiring terminal. The ground insertion wiring terminal comprises a terminal shell and a terminal base, wherein the terminal shell and the terminal base are detachably connected; the lower end of the terminal base is detachably provided with a jump seat; the terminal shell is internally provided with a plurality of insulating wiring cavities; a wire incoming hole is formed in the upper end of each insulating wiring cavity; a wire outgoing hole is formed in the lower end of the back end surface of each insulating wiring cavity; each insulating wiring cavity is internally provided with a copper wiring piece and a wiring positioning block from bottom to top in sequence respectively; a first screw hole is formed in the front end surface of each wiring positioning block respectively; each first screw hole is internally provided with a positioning screw respectively; and the head of each positioning screw is used for compressing the upper end of the aligned copper wiring piece by locking the corresponding positioning screw. Through the technical scheme, the ground insertion wiring terminal is reasonable in structure design, simple in structure, easy in wiring operation, safe, reliable and high in practicability, wires are separated from one another, and electric arcs are unlikely to generate.