229 results about "Common drain" patented technology

A CMOS EPROM, EEPROM or inverter device includes an nFET device with a thin gate dielectric layer and a pFET device juxtaposed with the nFET device with a thick gate dielectric layer and a floating gate electrode. The thick gate dielectric layer is substantially thicker than the thin gate dielectric layer. A common drain node connected both FET devices has no external connection in the case of a memory device and has an external connection in the case of an inverter. There are external circuit connections to the source regions of both FET devices and to the gate electrode of the nFET device. The pFET and nFET devices can be planar, vertical or FinFET devices.

The present invention relates generally to a phase change memory device and, more particularly, to a phase change memory cell array suitable for the implementation of a high-density memory device. The phase change memory cell array includes a first access transistor pair and a second access transistor pair formed on a semiconductor substrate to be adjacent to each other while each of the first and second access transistor pairs having a common drain, phase change resistance elements formed on source regions of the access transistors, respectively, and a semiconductor region formed on the same plane as the common drains to electrically connect the common drains of the first and second transistor pairs. The phase change memory cell array and the memory device of the present invention are suitable for the implementation of a high-density semiconductor device, and capable of improving the reliability of a contact forming process by securing a sufficient space for the contact forming process.

Methods are provided for fabricating a stressed MOS device. The method comprises the steps of forming a plurality of parallel MOS transistors in and on a semiconductor substrate. The parallel MOS transistors having a common source region, a common drain region, and a common gate electrode. A first trench is etched into the substrate in the common source region and a second trench is etched into the substrate in the common drain region. A stress inducing semiconductor material that has a crystal lattice mismatched with the semiconductor substrate is selectively grown in the first and second trenches. The growth of the stress inducing material creates both compressive longitudinal and tensile transverse stresses in the MOS device channel that enhance the drive current of P-channel MOS transistors. The decrease in drive current of N-channel MOS transistors caused by the compressive stress component is offset by the tensile stress component.

The present invention relates to a battery protection circuit for protecting a plurality of batteries connected in series. The battery protection circuit includes: a controller for monitoring the batteries and outputting control signals based on predetermined conditions associated with the batteries; a first N-channel MOSFET and a second N-channel MOSFET coupled in a common-drain configuration in a low-side path, wherein at least one of the first and second N-channel MOSFETs turns off in response to the control signal received from the controller when at least one of the predetermined conditions is detected; and a gate protection circuit for preventing gate-to-source voltages of the first and second N-channel MOSFETs from exceeding a predetermined gate-to-source voltage level.

A circuit and method for controlling a MOSFET based switch that includes two back-to-back FET to block current flow in the OFF state irrespective of the polarity of the voltage differential across the switch. The MOSFET based switch further has a built-in current limit function by sensing the current flow through one of the two MOSFET switches. Furthermore, the bilateral current-limited switch further includes circuitry required for controlling both P type and N type FET in either common drain or common source configuration.

In a NAND type nonvolatile memory device, a first insulating layer covers a common drain region formed in a string active region and a peripheral active region. A second insulating layer covers the first insulating layer. A bit line plug penetrates the first and second insulating layers and is connected to the common drain region. A peripheral lower plug penetrates the first insulating layer and is connected to the peripheral active region. A peripheral upper plug penetrates the second insulating layer and is stacked on the peripheral lower plug.

The invention relates to a capacitor-less low dropout regulator, which comprises a first-stage amplifier, a second-stage buffer, a voltage division circuit and an output transistor, wherein an impedance device is introduced between an output end of a common drain amplification circuit of the second-stage buffer and the ground, the impedance device is an active resistor device or a passive resistor device which is used for increasing the output resistance of the second-stage buffer, effectively controlling the damping coefficient of the capacitor-less low dropout regulator and reducing the influence of complex poles on dominant poles. Frequency compensation of the capacitor-less low dropout regulator is realized, and under the condition that a capacitor device does not need to be increasedadditionally, low-dropout output voltage is ensured to be precise and stable and have low noise, and the capacitor-less low dropout regulator can be used in a circuit capable of realizing monolithic integration and driving larger capacitive load.

A stacked-die package for battery protection is disclosed. The battery protection package includes a power control integrated circuit (IC) stacked on top of integrated dual common-drain metal oxide semiconductor field effect transistors (MOSFETs) or two discrete MOSFETs. The power control IC is either stacked on top of one MOSFET or on top of and overlapping both two MOSFETs.

A composite semiconductor package is disclosed. The package includes a lead frame having first and second die bonding pads, the first and second die bonding pads having a large lateral separation therebetween, a first device bonded to the first die bonding pad, a second device bonded to the second die bonding pad, a plurality of first leads coupled to the first die bonding pad, a plurality of second leads coupled to the second die bonding pad, and an encapsulant covering the lead frame, the first and second devices and at least a portion of the first and second pluralities of leads. The package may be a TSSOP-8 composite package having a common drain MOSFET pair and an IC.

A three terminal bi-directional laterally diffused metal oxide semiconductor (LDMOS) transistor which includes two uni-directional LDMOS transistors in series sharing a common drain node, and configured such that source nodes of the uni-directional LDMOS transistors serve as source and drain terminals of the bi-directional LDMOS transistor. The source is shorted to the backgate of each LDMOS transistor. The gate node of each LDMOS transistor is clamped to its respective source node to prevent source-gate breakdown, and the gate terminal of the bi-directional LDMOS transistor is connected to the gate nodes of the constituent uni-directional LDMOS transistors through blocking diodes. The common drain is a deep n-well which isolates the two p-type backgate regions. The gate node clamp can be a pair of back-to-back zener diodes, or a pair of self biased MOS transistors connected source-to-source in series.

The utility model relates to a monolithic fabrication technology for the enhanced and depletion VDMOS, belonging to a technology applying for fabricating a enhanced and a depletion VDMOS with a high voltage (650V) common drain in one IC, which is characterized in that the material of the VDMOS adopting a N(100) substrate doped arsenic, which has a resistivity below 0.005 Omega-CM, the thickness of the epitaxy is 55Mum, the resistivity of the epitaxy is 24 Omega-CM. The withstand voltage can be stable on 650V, and up to 700V. To add a depletion VDMOS on the surface of the enhanced VDMOS, the depletion area needs a individual switching voltage adjustment, which is adding once more VT impurity, while adjusting the pre-and post process. The utility model has the advantages of fewer photoetching, low cost and simple fabricating control.

A multi-transistor layout capable of saving area includes a substrate; a common drain comprising four sides formed over the substrate; four gates formed over the four sides of the common drain; and four sources formed over outer sides of the four gates corresponding to the common drain.

A semiconductor device comprising a semiconductor substrate having first and second surfaces opposing each other, the substrate including a plurality of cells sharing a common drain region, each of the cells having source and gate regions, a surface source electrode connected to the source region of each of the cells and provided on the first surface, a strap member coupled with the surface source electrode by ultrasonic waves, a gate polysilicon wiring layer connecting the gate region of each of the cells and having a silicide layer in at least a portion of a surface thereof, a surface gate electrode connected to the gate polysilicon wiring layer and provided on the first surface, and a drain electrode provided on the second surface and shared by the cells.

In order to correct the duty cycle of a given clock signal to produce a clock signal with a 50% duty cycle, a duty cycle correction circuit includes a delay unit for delaying a first clock signal to output a second clock signal and a clock-signal output unit. The clock-signal output unit includes two transistors which use the first and second clock signals as the inputs of respective gates and an inverter circuit for inverting a signal output from a common drain of the transistors to output a third clock signal. The delay unit delays the first clock signal so that the first clock signal falling appears at a timing at which the duty cycle thereof becomes 50%. The two transistors in the clock-signal output unit output, as the third clock signal, a ground voltage and a source voltage as the signal from the common drain in response to the rising of the first clock signal and the falling of the second clock signal, respectively.