14 results about "Common drain" patented technology

The utility model discloses a bidirectional switch semiconductor packaging device, an AC / DC converter and an automobile, and relates to the technical field of power supplies, the device comprises a first switch chip, a second switch chip, a plastic package shell and a heat dissipation substrate; the drain electrode or the source electrode of the first switch chip is electrically connected with the drain electrode or the source electrode corresponding to the second switch chip through the same heat dissipation substrate, so that a bidirectional switch structure with the common drain electrode or the common source electrode is formed, and heat dissipation can be carried out on the two switch chips at the same time by utilizing a single heat dissipation substrate. Meanwhile, on the surface of the plastic package shell, a creepage path extension part used for increasing the creepage distance is arranged between the heat dissipation substrate and any group of pins located on the two sides of the plastic package shell. Through the structure, the packaging size of the bidirectional switch semiconductor packaging device can be kept as small as possible, and meanwhile, the problems of power output control, heat dissipation, electrical safety and the like caused by the too small packaging size can be prevented.

The application relates to a bidirectional power device module integrated with a driving circuit and an active substrate clamping circuit, which comprises a common-drain bidirectional power device, a driving circuit used for providing a driving signal to the common-drain bidirectional power device to turn on and turn off the device, and a substrate clamping circuit comprising a first switch tube and a second switch tube, wherein the first switch tube and the second switch tube are commonly connected to the substrate of the common-drain bidirectional power device, the drain of the first switch tube is connected to the first source of the common-drain bidirectional power device, and the gate is connected to the output end of a third driving unit; the drain of the second switch tube is connected to the second source of the common-drain bidirectional power device, and the gate is connected to the output end of a fourth driving unit; the input end of the third driving unit inputs a first PWM input signal which is subjected to logic processing; and the input end of the fourth driving unit inputs a second PWM input signal which is subjected to logic processing. The application can improve the substrate clamping speed and reduce the substrate potential.

Embodiments include a FinFET transistor including an embedded resistor disposed in the fin between the source epitaxial region and the source contact. A control contact may be used to bias the embedded resistor, thereby changing the resistivity of the resistor. Edge gates of the FinFET transistor may be replaced with insulating structures. Multiple ones of the FinFET / embedded resistor combination may be utilized together in a common drain / common source contact design.

This invention belongs to the field of battery thermal runaway monitoring technology, specifically relating to a thermal runaway protection device and method for lithium battery packs in electric two-wheeled vehicles. The device includes a first protection circuit and a second protection circuit connected in series between the negative terminal and the interface of the battery pack, and a BMS main control chip connected to both. The first protection circuit includes a discharge MOSFET and a charging MOSFET connected in common drain configuration, used to cut off the charging and discharging circuit according to a first control signal. The second protection circuit includes an active isolation element connected in series between the negative terminal of the battery pack and the first protection circuit, and its trigger circuit. After the main control chip detects that the voltage or temperature exceeds a first threshold and outputs a first control signal, if it detects that the voltage or temperature reaches a second threshold, it outputs a second control signal to the trigger circuit, driving the active isolation element to a permanently disconnected state, achieving permanent physical isolation of the battery circuit.

Aspects of the present disclosure improve operating efficiency of a Terahertz RADAR device, facilitating implementation of Terahertz RADAR on a low power budget. Some aspects of the present disclosure relate to regulating a bias state of a harmonic generation circuit in a receiver and / or transmitter of a Terahertz RADAR device. Some aspects of the present disclosure relate to coupling frequency multipliers between RF amplifiers and RF antennas in a transmitter of a Terahertz RADAR device. Some aspects of the present disclosure relate to frequency multipliers, e.g., in a transmitter of a Terahertz RADAR device, using certain transistor configurations (e.g., common-collector or common-drain). A THz RADAR device May implement one, two, or all three of these aspects.

Aspects of the present disclosure improve operating efficiency of a Terahertz RADAR device, facilitating implementation of Terahertz RADAR on a low power budget. Some aspects of the present disclosure relate to regulating a bias state of a harmonic generation circuit in a receiver and / or transmitter of a Terahertz RADAR device. Some aspects of the present disclosure relate to coupling frequency multipliers between RF amplifiers and RF antennas in a transmitter of a Terahertz RADAR device. Some aspects of the present disclosure relate to frequency multipliers, e.g., in a transmitter of a Terahertz RADAR device, using certain transistor configurations (e.g., common-collector or common-drain). A THz RADAR device May implement one, two, or all three of these aspects.

A memory cell includes an active region extending lengthwise along a first direction and first and second gate structures extending lengthwise along a second direction different from the first direction. The first gate structure engages the active region in forming a first transistor, and the second gate structure engages the active region in forming a second transistor. The memory cell further includes a first epitaxial feature disposed on a source region of the first transistor, a second epitaxial feature disposed on a common drain region of the first and second transistors, a backside contact disposed under and in electrical coupling with the first epitaxial feature, a backside signal line disposed under and in electrical coupling with the backside contact, and a first frontside contact disposed above and in electrical coupling with the second epitaxial feature.

The application discloses an SRAM memory unit of an anti-soft-error SRAM, which has a double interlocking structure and comprises: first and second NMOS tubes which are connected in common source and provide interlocked first and second storage nodes, first and second PMOS tubes which are connected in common source and provide interlocked third and fourth storage nodes, a gate and a source of a fifth MOS transistor which are connected in common drain and are connected between the first and third storage nodes in phase, a gate and a source of a sixth MOS transistor which are connected in common drain and are connected between the second and fourth storage nodes in phase, a gate of a third MOS transistor which is connected to the second storage node, and a source and a drain which are connected between the first and third storage nodes. A gate of a fourth MOS transistor is connected to the first storage node, and a source and a drain are connected between the second and fourth storage nodes. The application can resist multi-node flipping and can improve RSNM and WNM.

This invention provides a bidirectional switching device, a substrate potential control method, a chip, and an electronic device, comprising: a bidirectional common-drain switching main tube formed on a substrate, having a first source, a second source, a first gate, and a second gate; a first diode, with its anode connected to the substrate and its cathode connected to the first source; a second diode, with its anode connected to the substrate and its cathode connected to the second source; a third diode, with its anode connected to the substrate and its cathode connected to the first gate; and a fourth diode, with its anode connected to the substrate and its cathode connected to the second gate. The bidirectional switching device, substrate potential control method, chip, and electronic device of this invention can overcome the influence of positive and negative dv / dt on the substrate potential; the substrate potential of the bidirectional switching device can be clamped near the lowest potential of the device, thereby ensuring stable operation; and it has good symmetry, a simple structure, and low cost.

The application belongs to the technical field of power semiconductors, and relates to a monolithic integrated bidirectional GaN HEMT device with adaptive substrate potential regulation. The device is connected to its own substrate by connecting a GaN HEMT in series with the source electrode of the common-drain bidirectional switch, and the conduction and turn-off of the series GaN HEMT are realized by means of the gate signal of the common-drain bidirectional switch during work, so that the substrate of the common-drain bidirectional switch can be adaptively connected to the source electrode on the side with lower potential of the device during work, and problems such as performance crosstalk, threshold voltage drift and sharp increase of dynamic on-resistance caused by floating of the substrate potential are avoided, meanwhile, no additional mask plate and process step are needed in the device manufacturing process, so that the structure is compatible with the conventional process, and is conducive to the integration of the device.

In an embodiment, a semiconductor device includes: a main bi-directional switch formed on a semiconductor substrate and including first and second gates, a first source electrically connected to a first voltage terminal, a second source electrically connected to a second voltage terminal, and a common drain; and a substrate control circuit. The substrate control circuit includes: a first diode and a second diode; a discharge circuit including a first transistor and a second transistor connected in a common source configuration to the semiconductor substrate; and a gate potential control circuit including a third diode and a fourth diode. The first diode has a forward voltage Vf1 and the third diode has a forward voltage Vf3, where Vf1≥1.1Vf4 or Vf1≥1.2Vf4 or Vf1≥1.5Vf4 or Vf1≥2Vf4.

A semiconductor device (1) comprises: a semiconductor layer (40) having a semiconductor substrate (32) of a first conductivity type containing impurities of a first concentration, and a low-concentration impurity layer (33) of the first conductivity type formed in contact with the upper surface of the semiconductor substrate (32) and containing impurities of a second concentration lower than the first concentration; a first vertical MOS transistor (10) and a second vertical MOS transistor (20) having the semiconductor substrate (32) as a common drain region; and a first Schottky barrier diode (81) having the low-concentration impurity layer (33) as a cathode when the first conductivity type is N-type, and the low-concentration impurity layer (33) as an anode when the first conductivity type is P-type, and being connected in parallel with the body diode of the first vertical MOS transistor (10) in the same forward direction.

Aspects of the present disclosure improve operating efficiency of a Terahertz RADAR device, facilitating implementation of Terahertz RADAR on a low power budget. Some aspects of the present disclosure relate to regulating a bias state of a harmonic generation circuit in a receiver and / or transmitter of a Terahertz RADAR device. Some aspects of the present disclosure relate to coupling frequency multipliers between RF amplifiers and RF antennas in a transmitter of a Terahertz RADAR device. Some aspects of the present disclosure relate to frequency multipliers, e.g., in a transmitter of a Terahertz RADAR device, using certain transistor configurations (e.g., common-collector or common-drain). A THz RADAR device May implement one, two, or all three of these aspects.

The application provides a generator system based on a high-frequency isolation matrix converter and a regulation method, and relates to the field of power generation, power transformation or power distribution.The generator system based on the high-frequency isolation matrix converter comprises a permanent magnet synchronous generator, a high-frequency matrix converter, a center-tapped high-frequency matrix transformer and a full-bridge converter, an output port of the permanent magnet synchronous generator is connected with the high-frequency matrix converter in the next stage, three-phase input of the high-frequency matrix converter is connected with the permanent magnet synchronous generator, the most common voltage source type device on the market is used, the cost and reliability of the device are ensured, the existing device common drain or common source connection is not needed, the additional conduction resistance of the device series connection is reduced, a complex multi-step commutation method is not needed, the simplified commutation strategy can omit the additional controller cost, the commutation failure probability is reduced, and the reliability of the system is enhanced.