636 results about "Common gate" patented technology

Provided are relatively higher-performance wire-type semiconductor devices and relatively economical methods of fabricating the same. A wire-type semiconductor device may include at least one pair of support pillars protruding above a semiconductor substrate, at least one fin protruding above the semiconductor substrate and having ends connected to the at least one pair of support pillars, at least one semiconductor wire having ends connected to the at least one pair of support pillars and being separated from the at least one fin, a common gate electrode surrounding the surface of the at least one semiconductor wire, and a gate insulating layer between the at least one semiconductor wire and the common gate electrode.

A method utilizing a common gate electrode material with a single work function for both the pMOS and nMOS transistors where the magnitude of the transistor threshold voltages is modified by semiconductor band engineering and article made thereby.

A system, method and computer program for an apparatus is described. An apparatus is a very convenient, plug-and-play, ultra small, smart device that lets the end-users to host their websites at computer peripheral port. When said device is plugged in one of the computer peripheral ports: Universal Serial Bus (USB), Secure Digital Input and Output (SDIO), Compact Flash (CF), Cardbus, Peripheral Component Interconnect (PCI), PCI-Express and ExpressCard; it shall function as a dedicated web hosting device powerful and robust enough to handle web hosting functions for Personal Home Page, File Transfer Protocol (FTP) Files Server, Streaming media, Common Gate Interface (CGI) scripts, Active Server Pages, or Game Server.

A low dropout linear voltage regulator with wide output current range and low pressure difference, comprises an error amplifier in the folding common source and common gate structure, a buffer circuit, a driving element, a feedback circuit, a load capacitance equivalent series resistance compensating circuit and a multistage Miller compensation circuit, wherein the buffer circuit changes the low frequency pole into a medium frequency pole and a high frequency pole; the large load capacitance of the load capacitance equivalent series resistance compensating circuit pushes the main pole to the low frequency, causing the gain crossover point to push inwards, and generating a medium frequency zero point for counteracting the medium frequency pole connected serially with the equivalent series resistance; the stride multilevel Miller compensation circuit generates a medium high frequency pole and a medium high frequency zero point slightly smaller than the medium high frequency pole for advancing the phase margin, thereby not only adding the unity gain bandwidth, but also saving considerable chip area. When the output current has a large change range, the structure provided by the invention generates wider unity gain bandwidth, provides the phase margin of greater than 85 degrees, ensures the stability of the system and advances the low pressure difference linear voltage stabilization performance.

In a vertical transistor comprising a pillar-shaped semiconductor layer and a gate electrode formed to around the pillar-shaped semiconductor layer, it is difficult to form a transistor having a gate length greater than that of the vertical transistor. The present invention provides a semiconductor device which comprises two vertical transistors comprising first and second pillar-shaped semiconductor layers each formed on a first diffusion layer on a substrate. The vertical transistors have a common gate electrode. A first upper diffusion layer formed on a top of the first pillar-shaped semiconductor layer is connected to a source electrode, and a second upper diffusion layer formed on a top of the second pillar-shaped semiconductor layer is connected to a drain electrode. The vertical transistors are connected in series to operate as a composite transistor having a gate length two times greater than that of each of the vertical transistors.

Methods are provided for fabricating a stressed MOS device. The method comprises the steps of forming a plurality of parallel MOS transistors in and on a semiconductor substrate. The parallel MOS transistors having a common source region, a common drain region, and a common gate electrode. A first trench is etched into the substrate in the common source region and a second trench is etched into the substrate in the common drain region. A stress inducing semiconductor material that has a crystal lattice mismatched with the semiconductor substrate is selectively grown in the first and second trenches. The growth of the stress inducing material creates both compressive longitudinal and tensile transverse stresses in the MOS device channel that enhance the drive current of P-channel MOS transistors. The decrease in drive current of N-channel MOS transistors caused by the compressive stress component is offset by the tensile stress component.

A low power circuit and method for detects in-situ failures or precursors to failures in solder-joint networks on actual operational devices and packages in the field. An amplifying detector such as provided by a common-gate transistor sources current to the network to generate a signal voltage and a reference voltage that is sensitive to the low voltage applied to the other side of the network. Generation of this self-adjusting reference voltage makes the detection circuit insensitive to the network low-voltage. Additional power savings and performance gains can be provided with the addition of a differential amplifier to set a fixed bias point and a level shifter to cancel noise. The detected failure or precursor of a selected monitor solder-joint network(s) is an indicator of the integrity of other operational solder-joint networks in the package, on the PWB or between PWBs.

A composite transistor is disclosed for use in radiation hardening a CMOS IC formed on an SOI or bulk semiconductor substrate. The composite transistor has a circuit transistor and a blocking transistor connected in series with a common gate connection. A body terminal of the blocking transistor is connected only to a source terminal thereof, and to no other connection point. The blocking transistor acts to prevent a single-event transient (SET) occurring in the circuit transistor from being coupled outside the composite transistor. Similarly, when a SET occurs in the blocking transistor, the circuit transistor prevents the SET from being coupled outside the composite transistor. N-type and P-type composite transistors can be used for each and every transistor in the CMOS IC to radiation harden the IC, and can be used to form inverters and transmission gates which are the building blocks of CMOS ICs.

The invention relates to a wide band radio-frequency low noise amplifier with single-ended input and differential output, belonging to the technical field of radio-frequency integrated circuits. The broadband radio-frequency low noise amplifier comprises a main amplifying circuit with the single-ended input, an active balun and an offset control circuit, wherein the active balun is connected with the main amplifying circuit and is converted from being single-ended to be differential; the main amplifying circuit mainly comprises an N-shaped transistor and a P-shaped transistor; and the active balun from being single-ended to be differential comprises a common-gate amplifying circuit and a common-source amplifying circuit. The low noise amplifier has very wide working frequency range, can cover the frequency range of a digital television from 50 MHz to 860 MHz and even wider, is suitable for wide bands and multi-mode multi-protocol communication system integration, and reduces the equipment cost. The invention can reduce the power consumption and the volume of the low noise amplifier, increase the gain, optimize the noise and enhance the linearity, also has simple structure, decreases off-chip elements, eliminates extra system noise generated by an off-chip balun, has extensive application potential in a wireless communication receiving system, and the like.

The present invention relates to a low power low noise amplifier, more particularly to the low power low noise amplifier composed with low power by sharing the bias current. The present invention is composed of cascode structure which consists of common source transistor and common gate transistor connecting with common source transistor, inverter type structure connecting with common source transistor and structure improving the third-order intermodulation component using the parallel connected common source transistor and common gate transistor. The present invention provides a low noise amplifier gives high power gain without increasing power consumption by sharing the bias current.

Sophisticated gate electrode structures for N-channel transistors and P-channel transistors are patterned on the basis of substantially the same configuration while, nevertheless, the work function adjustment may be accomplished in an early manufacturing stage. For this purpose, diffusion layer and cap layer materials are removed after incorporating the desired work function metal species into the high-k dielectric material and subsequently a common gate layer stack is deposited and subsequently patterned.

The application discloses an organic light-emitting pixel driving circuit and a driving method thereof. The organic light-emitting pixel driving circuit comprises a reset unit, a data signal input unit, a compensation unit, a storage unit, a driving unit and a light-emitting unit. The driving unit generates light emission current based on a data signal and provides light emission current to the light-emitting unit. The driving unit comprises a first driving transistor and a second driving transistor which are connected in series and have a common gate electrode. The first driving transistor is used for storing the data signal to the storage unit in the compensation phase. The first driving transistor and the second driving transistor are used for providing light emission current to a light-emitting diode in the light emission phase. According to the scheme, current of the compensation phase is relatively high so that the data signal is enabled to be rapidly stored to the storage unit.

The invention discloses a broadband low noise amplifier which comprises a primary common source and common gate amplifying circuit, a secondary common source amplifying circuit, an input and output matching circuit for providing a high gain for the circuit, a current extraction circuit for reducing the noise factor of the circuit, an MOS tube current source bias circuit, an HBT bias circuit and a bias network filter circuit for further reducing the noise factor of the circuit, wherein the common source and common gate circuit provides the high gain and simultaneously increases the reverse isolation degree of the circuit, and the common source amplifying circuit further improves the gain of the circuit; the MOS bias circuit and the HBT bias circuit provide stable low noise bias for a common gate tube and a common source tube; and the bias filter circuit filters radio-frequency signals on the bias to stabilize the bias, thereby reducing the noise factor to the minimum. The invention can be widely applied to modern wireless communication standards such as GSM850, GSM900, DCS1800, PCS1900, WCDMA and the like.

A semiconductor device including a substrate, a P-MOS single crystal TFT formed on the substrate, and an N-MOS single crystal TFT formed on the P-MOS single crystal TFT. The source region of the P-MOS single crystal TFT and the source region of the N-MOS single crystal TFT may be connected to each other. The P-MOS single crystal TFT and the N-MOS single crystal TFT may share a common gate. Also, the P-MOS single crystal TFT may include a single crystal silicon layer with a crystal plane of (100) and a crystal direction of <100>. The N-MOS single crystal TFT may include a single crystal silicon layer having the same crystal direction as the single crystal silicon layer of the P-MOS single crystal TFT and having a tensile stress greater than the single crystal silicon layer of the P-MOS single crystal TFT.

An envelope tracking power transmitter includes an envelope amplifier, a common-gate power modulation linearizer and a power amplifier. The envelope amplifier may receive a first envelope voltage to generate a power supply voltage that is amplified in proportion to change of the first envelope voltage. The common-gate power modulation linearizer may receive a second envelope voltage to amplify the second envelope voltage according to change of the second envelop voltage. The power amplifier may receive a first output of the envelope amplifier as a power supply voltage and a drain bias voltage, may receive a second output of the common-gate power modulation linearizer as a common gate bias voltage, and may amplify a radio frequency (RF) input signal to provide a RF output signal by maintaining an output capacitance according to an envelope of the RF input signal.

The invention provides an ultra-wide band low-noise single-ended input and differential output amplifier, which is characterized in that the amplifier comprises a common-gage amplification stage (1), a single-ended-to-differential stage (2) and a capacitor cross-coupling output buffer (3), wherein an output end of the common-gate amplification stage (1) is connected with an input end of the single-ended-to-differential stage (2); and an output end of the single-ended-to-differential stage (2) is connected with an input end of the capacitor cross-coupling output buffer (3). According to amplifier, a pre-amplification stage and the single-ended-to-differential stage adopt a current reuse technology, so that one stage of current consumption can generate two stages of amplification; the common-gate amplification stage provides wide band input matching and avoids a no-source matching network; load impedances of the pre-amplification stage and the single-ended-to-differential stage are resonated at different frequencies respectively; functions of signal amplification of the wide band and single-ended-to-differential are realized by gain complementation of the pre-amplification stage and the single-ended-to-differential stage; a capacitor cross-coupling technology is applied in the output buffer additionally; amplitude and phase of an output differential signal are compensated to reach the balance between the amplitude and the phase of the differential signal; and the gain of the output buffer is increased.

A linear transconductor (LT), for instance for a one-cycle controller (OC), comprises i) an operational amplifier (OA) having non-inverting (+) and inverting (-) inputs, a power supply input intended to be connected to a DC voltage (VBAT), and an output (OO), ii) a voltage divider means (Rl, R2) comprising a first terminal defining a transconductor non-inverting input (Vin+) and intended to be connected to a first voltage (Vx), and a second terminal connected to the operational amplifier inverting input (-), iii) a resistor (R3) comprising a first terminal defining a transconductor inverting input (Vin-) intended to be connected to a second voltage and a second terminal connected to the operational amplifier non-inverting input (+), iv) first (Tl) and second (T2) matched transistors having respective sources connected together and to the operational amplifier power supply input, respective common gates connected to the operational amplifier output (OO), and respective drains, the drain of the first transistor (Tl) being connected to the operational amplifier non-inverting input (+) and the drain of the second transistor (T2) defining a transconductor output.

The invention belongs to the technical field of radio frequency integrated circuits, and in particular relates to a full differential CMOS multimode low-noise amplifier. The low-noise amplifier can be applied to a front end of a multimode receiver with the frequency of between 0.5 and 10.6 GHz. The low-noise amplifier consists of a matching stage, an amplification stage, a feedback stage and a loading stage, wherein the matching stage tunes broadband input impedance by using a feedback inductor; the amplification stage takes a current multiplexing common source NMOS tube and a PMOS tube as an input end and takes a common gate NMOS tube connected with the output of drain terminals of the NMOS tube and the PMOS tube as a current follower; an NMOS tube between a grid of an input NMOS tube and a drain of the NMOS tube of the current follower forms a 'voltage-current' type negative feedback circuit with a resistor; and the loading stage adopts resistive load. The full differential CMOS multimode low-noise amplifier has the advantages of simple structure, small chip occupied area, low power consumption and wide bandwidth coverage.