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Full differential CMOS multimode low-noise amplifier

A low-noise amplifier, fully differential technology, applied in differential amplifiers, DC-coupled DC amplifiers, improved amplifiers to reduce noise effects, etc., to achieve high performance, good input matching and gain bandwidth expansion, and improve the effect of high-frequency input matching

Inactive Publication Date: 2010-11-24
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, unlike the traditional narrowband LNA, the ultra-broadband LNA covering 0.5~10.6GHz that satisfies multiple communication modes has a bandwidth up to more than ten GHz, and maintains good input matching, gain flatness and low Noise is also a difficult performance requirement

Method used

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Examples

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Embodiment Construction

[0031] A specific embodiment is given below:

[0032] Such as Figure 7 As shown, this example circuit is the application of a fully differential CMOS LNA in a multi-mode RF receiver. Its operating frequency range is 0.5~10.6GHz, and it is compatible with various standards such as GSM, WCDMA, Bluetooth, WLAN, and UWB.

[0033] NM1=2*48u / 0.13um

[0034] NM2=2*23u / 0.13um

[0035] NM3=2*30 / 0.13um

[0036] RF=250

[0037] RL=140

[0038] NMM4=2*8um / 0.13um

[0039] NM5=2*16um / 0.13um

[0040] L=2.3 nH

[0041] The circuit works at 1.2V and consumes 7.9mA. Circuit performance: input matching S11≤-10dB, noise figure NF is 3.1~3.7dB, gain S21 is 19~22dB, covering frequency band 0.5~10.6GHz, linearity is -6dBm, it can be seen that the circuit has good broadband performance.

[0042] Finally, it should be noted that the above is only used to illustrate the technical solution of the present invention rather than limit it. Those of ordinary skill in the art should understand that th...

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Abstract

The invention belongs to the technical field of radio frequency integrated circuits, and in particular relates to a full differential CMOS multimode low-noise amplifier. The low-noise amplifier can be applied to a front end of a multimode receiver with the frequency of between 0.5 and 10.6 GHz. The low-noise amplifier consists of a matching stage, an amplification stage, a feedback stage and a loading stage, wherein the matching stage tunes broadband input impedance by using a feedback inductor; the amplification stage takes a current multiplexing common source NMOS tube and a PMOS tube as an input end and takes a common gate NMOS tube connected with the output of drain terminals of the NMOS tube and the PMOS tube as a current follower; an NMOS tube between a grid of an input NMOS tube and a drain of the NMOS tube of the current follower forms a 'voltage-current' type negative feedback circuit with a resistor; and the loading stage adopts resistive load. The full differential CMOS multimode low-noise amplifier has the advantages of simple structure, small chip occupied area, low power consumption and wide bandwidth coverage.

Description

technical field [0001] The invention belongs to the technical field of radio frequency integrated circuits, and specifically relates to the design of a fully differential low noise amplifier with high gain, low noise and good input matching, and is especially applied to the front end of a 0.5-10.6GHz multi-mode receiver. It is suitable for multi-mode receiver systems including GSM, WCDMA, Bluetooth, WLAN, UWB, etc. Background technique [0002] Multi-mode RF receiver systems are currently a research hotspot in academia and industry. The compatibility of multiple communication modes is realized through a single receiver link, which can reduce the power consumption of the whole machine and the area of ​​the chip at the same time. [0003] The low-noise amplifier is one of the most critical modules in the front-end of the receiver. Its function is to amplify the weak signal received by the antenna and suppress the noise of the receiver's post-stage circuit. This requires that...

Claims

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Application Information

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IPC IPC(8): H03F3/45H03F1/32H03F1/26
Inventor 任俊彦张楷晨周锋李巍李宁许俊叶凡
Owner FUDAN UNIV
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