FIELD:
microwave electronic devices.SUBSTANCE: in a low-
noise microwave field-effect
transistor on a
semiconductor heterostructure, at least three
quantum barrier
layers of i-AlAs are additionally made, each with a thickness of 2-6 atomic monolayers, wherein each of said
quantum barrier
layers is located between the actual channel layer of InyGa1-yAs or a group of
layers of the latter and the gate, wherein at least one
quantum barrier layer is located between the doped layer and, or δ n-layer and the actual channel layer of InyGa1-yAs or a group of layers of the latter and at least one quantum
barrier layer is located between the doped layer and, orδ n-layer and a gate, wherein the quantum barrier layers are separated from each other by at least one layer of narrow-band material AlxGa1-xAs, with a
molar fraction of the
chemical element Al x less than 0.4, with a thickness equal to or greater than 2 atomic monolayers, or a layer of GaAs, with a thickness equal to or greater than 2 atomic monolayers, between the actual channel layer InyGa1-yAs or a group of layers of the latter and the buffer layer, layers of GaAs, transition layers, quantum barrier layers i-AlAs, barrier layers, and layers doped with an
acceptor impurity are made, on the last layer of the group of barrier layers, quantum barrier layers i-AlAs, barrier, transition and contact layers are made in a given sequence.EFFECT: increase in the
gain factor and a reduction in the
noise figure.1 cl, 1 dwg, 1 tbl