36 results about "Overdrive voltage" patented technology

The invention discloses a high-speed level conversion circuit, and belongs to the technical field of integrated circuit design, the circuit mainly comprises an input signal processing module, a voltage boosting module, a differential signal generation module, a signal amplification module and an output module, the input signal processing module converts a low-voltage input signal into a complementary logic signal pair; the voltage boosting module raises the voltage amplitude of the complementary logic signal by using a charge pump principle; the lifted signal drives a thick gate transistor in the differential signal generation module to generate a differential signal; the signal amplification module adopts a cross coupling structure to quickly amplify the differential signal; and finally, the output module outputs a high-voltage domain signal in an inverted manner. By introducing voltage bootstrap before gate driving, the overdrive voltage of a core switch tube is remarkably increased, so that the problem of low conversion speed of a traditional level conversion circuit is effectively solved on the premise of not increasing the device size and static power consumption, and high-speed and high-efficiency level conversion is realized.

The invention discloses a depth compensation method of a direct time of flight (dTOF) sensor and electronic equipment, and is suitable for the technical field of computer application. The method comprises: in response to a trigger operation on a camera application, driving a dTOF sensor to acquire original image data (201); acquiring a current actual driving voltage of a single photon avalanche diode (SPAD) in the dTOF sensor (202); acquiring a current expected driving voltage of the SPAD (203); and performing depth compensation on the original image data according to the actual driving voltage and the expected driving voltage to generate a target depth map (204). Therefore, the depth information offset caused by the adjustment error of the SPAD driving voltage is corrected through the deviation between the actual value and the theoretical value of the SPAD driving voltage, so that the accuracy of the depth information collected by the dTOF sensor is improved, and the distance measurement precision of the dTOF sensor is improved.

The present application relates to a pixel driving method, a display device, a timing controller and a storage medium. The method is applied to the timing controller, and the method comprises the following steps: receiving an image to be displayed, and generating first voltage data according to the image to be displayed pixel by pixel; when processing a current pixel row, judging whether the first voltage data is same as second voltage data, wherein the second voltage data is voltage data sent by the timing controller to a pixel driver when processing a previous pixel row; if the first voltage data is same as the second voltage data, sending the first voltage data to the pixel driver; if the first voltage data is not same as the second voltage data, obtaining third voltage data from a preset overdrive voltage table, and sending the third voltage data to the pixel driver. The pixel driving method can solve the problem that when the current row triggers the line OD, the next row data is same as the current row data, the line OD is not triggered, and the next row cannot reach the target gray scale, thereby improving the charging problem caused by the opening of the line OD function.

The invention provides a display device which comprises a display panel and a source driver which are electrically connected, and a gamma buffer module in the source driver comprises a plurality of gamma output ends used for outputting a plurality of gamma voltages respectively. A channel buffer module in the source driver is used for generating a plurality of corresponding data voltages according to the plurality of gray-scale values and at least one corresponding gamma voltage; wherein the first switch module is used for controlling the gamma voltage output by the first part gamma output end (at least outputting the maximum and minimum gamma voltages) to act on the channel buffer module to generate a plurality of overdrive voltages corresponding to a plurality of gray-scale values before the channel buffer module generates a plurality of data voltages; the risk that the ideal charging degree cannot be achieved after the pixel electrodes are acted by data signals is reduced, and the uniformity of the brightness of a display picture is improved.

The invention provides an LCD liquid crystal display screen color correction control method and system, and relates to the technical field of LCD liquid crystal display screen color correction control, a display area of an LCD liquid crystal display screen is divided into a plurality of logic areas, and a driving busy index is calculated in real time for each logic area. And then, converting the driving busy index into a corresponding compensation adjustment coefficient, dynamically adjusting the basic overdrive voltage of the target pixel based on the coefficient, and finally applying the adjusted target overdrive voltage to the liquid crystal molecules to correct the deflection force. According to the method, the problem of inaccurate overdrive compensation value caused by non-uniform panel temperature and dynamic change in the prior art can be effectively solved, and reverse smear and residual smear are avoided.

The invention provides an overdrive adjusting system and a display device. The sampling unit is used for collecting the environment temperature of the display panel and outputting sampling voltage; the comparison unit is used for comparing the sampling voltage with a plurality of preset reference voltages and outputting a temperature state signal; the time sequence control chip is used for calling a corresponding overdrive table from pre-stored overdrive tables based on the temperature state signal so as to adjust an overdrive voltage value of a data signal of the display panel; wherein the temperature state signal is a binary code. The sampling voltage is compared with the multiple preset reference voltages to obtain the temperature state, and the corresponding overdrive table is called based on the temperature state, so that different overdrive tables can be obtained corresponding to different temperatures, the display panel obtains corresponding overdrive voltage values under different temperature conditions, and the display effect of the display panel is improved. The phenomenon of smear or black smear is avoided, and the stability of the displayed image quality is ensured.

An electronic device includes: a display; a battery; and a boost circuit to receive power from the battery and to supply a driving voltage to the display. The boost circuit includes: a first switching device connected to a first node; a second switching device connected to the first node; an inductor between an input terminal of the boost circuit and the first node; an output capacitor to generate a DC overdrive voltage by smoothing an AC current generated by the first switching device and the second switching device; a blocking device to block a leakage current of the battery; and a control circuit to control the overdrive voltage by controlling the blocking device, based on a system voltage that is equal to or greater than a threshold voltage, and wherein the system voltage is an input voltage of the boost circuit.

A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a memory access operation on a set of cells associated with a wordline of the memory device; determining that a temperature associated with the memory device satisfies a threshold criterion; determining a memory access operation type of the memory access operation; and performing the memory access operation on the set of cells associated with the wordline using a first time sense parameter, wherein the first time sense parameter corresponds to the memory access operation type and the temperature associated with the memory device.

Methods, systems, and apparatus, including computer programs encoded on computer storage media, for brightness control for under-display fingerprint sensor are disclosed. A method includes receiving, at a computing device, an indication to activate an under-display sensor that is located underneath a display of the computing device; activating a collection of LEDs of the display to provide illumination for the under-display sensor, including activating an LED in the collection of LEDs by: establishing, by drive circuitry of the LED, a first overdriven voltage across an LED-driving transistor that is arranged to energize the LED; establishing a second overdriven voltage across the LED-driving transistor; and establishing a steady state voltage across the LED-driving transistor; and activating the under-display sensor by reading a signal from the under-display sensor once the collection of LEDs has activated, including once the steady state voltage has been programmed across the LED-driving transistor.

Devices, systems, and methods are provided for generating a high, dynamic voltage boost. An integrated circuit (IC) includes a driving circuit having a first stage and a second stage. The driving circuit is configured to provide an overdrive voltage. The IC also includes a charge pump circuit coupled between the first stage and the second stage. The charge pump circuit is configured generate a dynamic voltage greater than the overdrive voltage. The IC also includes a bootstrap circuit coupled to the charge pump circuit, configured to further dynamically boost the overdrive voltage of the driving circuit.

The invention discloses a multi-valued storage oriented 2T0C DRAM (Dynamic Random Access Memory) read-write method and system, and relates to the technical field of multi-valued storage, and the method comprises the following steps: adopting a multi-valued current source, and transmitting preset write-in current matched with to-be-written-in data to all target storage units needing to write in the same to-be-written-in data in a 2T0C DRAM storage array; the write-in transistor and the read transistor in the target storage unit share the same bit line; all the target storage units generate respective storage node voltages in a self-adaptive manner by combining the threshold voltages of respective reading transistors on the basis of the preset write-in current, so that the overdrive voltages of the target storage units are the same; the overdrive voltage uniquely corresponds to the to-be-written data; when the data are read, the read current on the bit line is detected to obtain the storage data; the read current is uniquely determined by the overdrive voltage. The method is used for solving the influence of threshold voltage fluctuation on multi-value storage accuracy in the prior art.

The invention provides an LCD liquid crystal display screen response time optimization method and system, and relates to the technical field of LCD liquid crystal display screen response time optimization, and the method comprises the steps: determining the current display context state information through obtaining the operation environment information and user operation intention information of an LCD liquid crystal display screen; generating a core compensation coefficient of which the data volume is not greater than 50 bytes based on the state information, and sending the core compensation coefficient to a driving IC through a display serial interface; and the driving IC autonomously calculates an overdrive voltage compensation value according to the received core compensation coefficient and a pre-stored basic compensation rule, generates a driving voltage according to the overdrive voltage compensation value, and applies the driving voltage to a corresponding pixel electrode of the liquid crystal panel. According to the invention, the operation environment and the user intention are sensed in real time, and the core compensation information is transmitted to the driving IC for autonomous calculation, so that the dynamic and fine adjustment of the overdrive voltage is realized, and the response speed and the display quality of the display screen under variable working conditions are improved.

A sensor excitation circuit includes a voltage driver circuit and a short-circuit protection circuit. The voltage driver circuit selectively conducts electrical current via a driver output in response to a first operating voltage exceeding a driver voltage threshold (V1be). The short-circuit protection circuit includes a protection semiconductor switching device and a temperature compensation circuit. The protection semiconductor switching device limits the electrical current through the voltage driver circuit in response to switching on when a second operating voltage exceeds a protection voltage threshold (V2be). The temperature compensation circuit is connected to the protection semiconductor switching device, and is configured to limit a variation of the protection threshold voltage (V2be) in response to exposing the protection semiconductor switching device to different temperatures.

The utility model provides an electronic device and an electrostatic discharge protection circuit. The electronic device comprises a core logic circuit coupled to a power supply voltage rail and an operation voltage rail. During standard operation, the supply voltage rail has a supply voltage, the operating voltage rail has an operating voltage, and the post-driver voltage rail has an overdrive voltage greater than the operating voltage. The electronic device further includes a first power clamping circuit coupled to the supply voltage rail and the rear driver voltage rail; a low side logic high voltage rail coupled to a first end of the core logic circuit; and a first power-to-power clamping circuit coupled to the low-side logic high voltage rail and the rear driver voltage rail. The first power-to-power clamp circuit is configured to receive an electrostatic discharge (ESD) current between the rear driver voltage rail and the low-side logic high voltage rail.

The application provides a post driver and a chip with overdrive capability. A first biasing circuit is configured to provide a first voltage offset between an output of the post driver and a gate of a first P-channel metal-oxide-semiconductor (PMOS) transistor of a pull-up circuit when the pull-up circuit is enabled. A second biasing circuit is configured to provide a second voltage offset between the output of the post driver and a gate of a first N-channel metal-oxide-semiconductor (NMOS) transistor of a pull-down circuit when the pull-down circuit is enabled. Thus, both the PMOS transistor in the pull-up circuit and the NMOS transistor in the pull-down circuit are well protected despite being powered by overdrive voltage.

The invention provides a method for generating overdrive voltage based on the temperature of a panel. The panel comprises a controller and a pixel circuit. The method comprises the steps that a built-in temperature detector of the controller senses the temperature of the panel to generate a sensed temperature value; the controller generates an overdrive voltage according to the sensed temperature value and the search information. The controller outputs the overdrive voltage to the pixel circuit.

The application provides an LCD liquid crystal display screen color correction control method and system, and relates to the technical field of LCD liquid crystal display screen color correction control. The display area of the LCD liquid crystal display screen is divided into multiple logical areas, and the driving busy index is calculated in real time for each logical area. Then, the driving busy index is converted into a corresponding compensation adjustment coefficient, and the basic overdrive voltage of a target pixel is dynamically adjusted based on the coefficient, and finally the adjusted target overdrive voltage is applied to the liquid crystal molecules to correct the deflection force. The method can effectively solve the problem of inaccurate overdrive compensation value caused by uneven and dynamic changes in panel temperature in the prior art, and avoid the generation of reverse ghosting and residual ghosting.

A non-volatile storage apparatus continuously maintains unselected word lines for multiple regions in multiple blocks at one or more overdrive voltages and continuously maintains unselected select lines for multiple regions in multiple blocks at one or more unselected voltages while performing a read process for non-volatile memory cells in one or more regions of one or more blocks of the same die, without lowering those signals to ground or another resting voltage. Selected word lines are separately temporarily toggled to a read reference voltage to enable reading and then reverted back to an overdrive voltage upon completion of the reading. Selected select lines are separately temporarily toggled to a select voltage to enable reading and then reverted back to an unselected voltage upon completion of the reading.

The present invention provides a semiconductor memory device and a control method thereof, the semiconductor memory device comprising: a plurality of banks 20 each comprising at least one sense amplifier 10; a first voltage supply unit 30 that supplies an overdrive voltage VOD, which is higher than the voltage VBLH of the sense amplifier 10, to each sense amplifier 10 of the plurality of banks 20 when an amplification operation of the bit line BLT, BLC voltage connected to each sense amplifier 10 in the plurality of banks 20 is performed; and a control unit (40) that, when any one of the plurality of banks (20) is amplified, supplies the overdrive voltage (VOD) to the sense amplifier (10) of any one of the banks (20) in a state in which there is no voltage drop, so as to charge the overdrive voltage (VOD).

A method for generating overdriving voltage based on temperature of panel is disclosed. The method includes the following steps. A built-in temperature detector of a controller senses temperature of the panel to generate a sensing temperature value. Alternatively, the controller calculates a sensing temperature value, according to lookup information and raw data. The raw data is obtained according to touch sensing signals output from multiple touch sensors. Then, the controller generates an overdriving voltage, according to the sensing temperature value and another lookup information. The controller outputs the overdriving voltage to the pixel circuit.

This application discloses a driving method, driving circuit, and display device. The driving method includes the following steps: temporarily storing the pixel voltage of the previous frame and acquiring the pixel voltage of the current frame; adjusting the overdrive voltage before data line transmission to determine a charge / discharge threshold parameter; calculating the pixel voltage difference between the two frames and comparing it with the charge / discharge threshold parameter; performing a charge / discharge operation based on the comparison result, wherein charging / discharge is triggered when the voltage difference is higher than the charge / discharge threshold parameter, and not performed when it is lower than or equal to the charge / discharge threshold parameter; and synchronously controlling the execution timing of the above steps based on the timing of the display panel's working mode. This application accurately determines the charge / discharge requirement based on the actual pixel voltage change state, determines the threshold by adjusting the overdrive voltage before data line transmission, and performs charging / discharge only when the pixel voltage change exceeds the threshold, thereby eliminating invalid charging / discharging at the source and reducing invalid charging / discharging losses.

The semiconductor memory device includes multiple memory banks (20), a first voltage supply unit (30), and a control unit (40). Each of the memory banks (20) includes at least one sense amplifier (10). When amplifying the voltage of the bit lines (BLT, BLC) connected to the sense amplifiers (10) of the memory banks (20), the first voltage supply unit (30) supplies an overdrive voltage (VOD) that is higher than the operating voltage (VBLH) of the sense amplifier (10) to the sense amplifiers (10) of each of the memory banks (20). The control unit (40) controls the supply of a charging voltage for the overdrive voltage (VOD) in such a way that the overdrive voltage is supplied to the sense amplifier (10) of any one of the memory banks (20) without a voltage drop when any one of the multiple memory banks (20) is performing the amplification operation.

In various examples, optimal response time compensation (RTC) parameters may be determined for a display panel—such as a liquid crystal display (LCD) panel—based on sensor data. For instance, the disclosed systems and methods may calibrate optimal RTC parameters by using one or more sensors to generate sensor data while causing a display to render one or more images. The sensor data may be indicative of luminance values associated with at least one pixel of the display during a transition of the pixel from a first color value to a second color value. Using the sensor data, an optimal level of an overdrive voltage / RGB value may be determined for transitioning the pixel from the first color value to the second color value. Additionally, in some instances the overdrive may be determined in perceptual space by mapping the luminance values to perceptual brightness values.

The invention belongs to the technical field of display driving, and particularly relates to a pixel driving circuit, a pixel array, a display panel and a pixel driving method. The target voltage storage module is configured to be connected with the scanning line and the data line and is used for storing a target voltage under the action of a scanning signal output by the scanning line and a data signal output by the data line; the overdrive voltage storage module is configured to be connected with the scanning line and is used for storing overdrive voltage under the action of a scanning signal output by the scanning line; wherein the overdrive voltage is different from the target voltage; and the voltage switching module is configured to be respectively connected with the target voltage storage module, the overdrive voltage storage module and the liquid crystal capacitor, and is used for firstly controlling the overdrive voltage storage module to apply the overdrive voltage to the liquid crystal capacitor and then controlling the target voltage storage module to apply the target voltage to the liquid crystal capacitor in a frame period. On the premise that the field sequence driving time sequence is not changed, overdrive operation is achieved.

A non-volatile storage apparatus continuously maintains unselected word lines for multiple regions in multiple blocks at one or more overdrive voltages and continuously maintains unselected select lines for multiple regions in multiple blocks at one or more unselected voltages while performing a read process for non-volatile memory cells in one or more regions of one or more blocks of the same die, without lowering those signals to ground or another resting voltage. Selected word lines are separately temporarily toggled to a read reference voltage to enable reading and then reverted back to an overdrive voltage upon completion of the reading. Selected select lines are separately temporarily toggled to a select voltage to enable reading and then reverted back to an unselected voltage upon completion of the reading.

To provide a semiconductor storage device capable of operating a sense amplifier of each bank at high speed even when an overdrive voltage is shared among a plurality of banks, and a control method thereof.SOLUTION: A semiconductor storage device includes: a plurality of banks 20, each of which includes at least one sense amplifier 10; a first voltage supply unit 30 that supplies an overdrive voltage VOD higher than an operational voltage VBLH of the sense amplifier 10 to each sense amplifier 10 of the plurality of banks 20, when an amplifying operation of voltages of bit lines BLT, TLC connected to each of the sense amplifiers 10 of the plurality of banks 10 is performed; and a control unit 40 that controls supplying a charging voltage for charging the overdrive voltage VOD so that the overdrive voltage VOD is supplied to the sense amplifier 10 of either bank 20 in a state where the overdrive voltage VOD does not drop in a voltage drop when the amplifying operation is performed in either bank 20 among the plurality of banks 20.SELECTED DRAWING: Figure 2

The invention belongs to the technical field of display driving, and particularly relates to a voltage regulation circuit, a voltage regulation method and a display panel, and the voltage regulation circuit comprises a data detection module which is used for obtaining previous frame gray scale data and current frame gray scale data corresponding to two adjacent frames of display pictures; the data comparison module is used for performing data comparison on the previous frame of gray scale data and the current frame of gray scale data to determine whether a highlight dynamic area exists or not; when it is determined that the highlight dynamic area exists, a first trigger signal is output through the first output end of the data comparison module; the first adjusting module is used for generating a target gamma voltage according to the output voltage of the adjusting voltage end under the action of the first trigger signal, so that the source electrode driving chip generates an overdrive voltage according to the target gamma voltage; therefore, the problem that the gray scale response time from any gray scale to the highest brightness gray scale is slow is solved.

The present disclosure relates to a computer-implemented method (200) and a system (100) for implementing a real-number System Verilog model of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) for accelerated mixed-signal functional verification. The method (200) includes establishing (202) an Analog net including a Thevenin voltage and a Thevenin resistance at drain, source, and gate terminals of the MOSFET, and extracting (204) effective voltages and effective resistances from the drain, source, and gate terminals of the MOSFET. The method (200) includes establishing (206) a fast quadratic solver to compute drain to source MOSFET current, drain to source MOSFET voltage, and drain to source MOSFET resistance. The method (200) includes driving (208) feedback of the drain to source MOSFET current in terms of a drive voltage and a drive resistance to the Analog net, and attaining (210) a circuit convergence in real-time through an event-driven mechanism at a particular timestamp.

The present invention relates to a device (100) for protecting a circuit connected to a power supply network, in particular to a vehicle power supply network, against overvoltages; comprising an electrical input (125) for applying an input voltage; an electrical output (130) for providing an electrical output voltage to the power supply network or to the connected circuit; and an electrical protection circuit with a detection section (135), a semiconductor switch (T109) and a limiting section (140); wherein the semiconductor switch (T109) is arranged between the electrical input (125) and the electrical output (130) and can be controlled such that the output voltage at the electrical output (130) can be interrupted;wherein the detection section (135) is configured to control the semiconductor switch (T109) by means of a drive voltage when a threshold value of the input voltage is reached, such that the output voltage is interrupted; wherein the detection section (135) comprises a voltage threshold detector element (D103), for example a Zener diode (D103); and wherein the limiting section (135) is configured to limit the drive voltage for the semiconductor switch (T109) when the output voltage is interrupted; wherein the limiting section (135) comprises a current-impressing component (T101, T103) for limiting a current flowing through the voltage threshold detector element (D103).

A non-volatile memory device continuously maintains unselected word lines for multiple regions in multiple blocks at one or more overdrive voltages and maintains unselected select lines for multiple regions in multiple blocks at one or more unselected voltages while a read process is performed on non-volatile memory cells in one or more regions of one or more blocks of the same device, without driving these signals to ground or any other quiescent voltage. To enable the read, selected word lines are separately and temporarily switched to a read reference voltage and then reset to an overdrive voltage after the read is complete.To enable reading, selected selection lines are temporarily switched to a selection voltage separately, and then switched back to a non-selected voltage after the reading is complete.