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222 results about "Peak level" patented technology

Display apparatus

The invention provides a display panel 9; a gain variable liquid crystal driving circuit 10 for driving the display panel 9 with an amplified video signal that is obtained by multiplying an input video signal by a variable coefficient; a backlight operating circuit 6 for operating, based on a lamp control signal, a backlight 8 for illuminating the display panel 9; a level extension signal calculating circuit 11 for outputting an optical output level extension signal Lout by extending a predetermined output level used to operate the backlight 8, wherein the predetermined output level is extended based on an optical output gain obtained from the input video signal, and an output peak value of the backlight 8; and a white peak improving circuit 5 for receiving the optical output level extension signal, and for outputting a lamp control signal, whose white peak level has been adjusted according to a change in brightness of a scene, to the backlight operating circuit 6, and for calculating and outputting a video amplitude gain, which adjusts an amplitude of a video signal, as a coefficient to a gain variable driving amplifier circuit 3, wherein the lamp control signal is outputted when the brightness of a scene is above normal level, and the video amplitude gain is outputted when the brightness is at normal level. As a result, there is provided a display apparatus that improves peak luminance in a bright scene and suppresses pale black display in a dark scene and thereby provide a wide dynamic range without increasing power consumption.
Owner:SHARP KK

CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and methods of forming same

CMOS integrated circuit devices include an electrically insulating layer and an unstrained silicon active layer on the electrically insulating layer. An insulated gate electrode is also provided on a surface of the unstrained silicon active layer. A Si1-xGex layer is also disposed between the electrically insulating layer and the unstrained silicon active layer. The Si1-xGex layer forms a first junction with the unstrained silicon active layer and has a graded concentration of Ge therein that decreases monotonically in a first direction extending from a peak level towards the surface of the unstrained silicon active layer. The peak Ge concentration level is greater than x=0.15 and the concentration of Ge in the Si1-xGex layer varies from the peak level to a level less than about x=0.1 at the first junction. The concentration of Ge at the first junction may be abrupt. More preferably, the concentration of Ge in the Si1-xGex layer varies from the peak level where 0.2<x<0.4 to a level where x=0 at the first junction. The Si1-xGex layer also has a retrograded arsenic doping profile therein relative to the surface. This retrograded profile may result in the Si1-xGex layer having a greater concentration of first conductivity type dopants therein relative to the concentration of first conductivity type dopants in a channel region within the unstrained silicon active layer. The total amount of dopants in the channel region and underlying Si1-xGex layer can also be carefully controlled to achieve a desired threshold voltage.
Owner:SAMSUNG ELECTRONICS CO LTD
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