8615results about How to "Inhibit deterioration" patented technology

First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r1′ of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature r1 of the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2×r1. The radius of curvature r2′ of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature r2 of the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2×r2.

Driver training methods, systems, and computer readable media are disclosed. A training method receives sensor information from a vehicle driven along a driving route by an individual, assesses performance of the individual based on the sensor information and an individual mastery level, and adjusts the individual mastery level based on the assessed performance of the individual. The method may be embodied in a computer readable media. A driver training system includes a receiver that receives vehicle sensor information associated with a vehicle being driven along a driving route by an individual and a processor coupled to the receiver that assesses performance of the individual based on the received sensor information and an individual mastery level and adjusts the individual mastery level based on the assessed performance of the individual. Driver training protocols and systems and methods for implementing and transforming driver training protocols are also disclosed.

An exposure apparatus includes a projection optical system for projecting an image of a pattern of a reticle onto an object, via a fluid that is filled in a space between said projection optical system and the object, a vibrator part for vibrating at least one of the fluid, the object, and the projection optical system, and a controller for controlling the vibrator part so that the vibration of at least one of the fluid, the object, and the projection optical system becomes a tolerance during a processing of the object.

A projector comprises a light source unit 63, a display device, a cooling fan, a light source side optical system for guiding light from the light source unit 63 to the display device, a projection side optical system for projecting an image emitted from the display device on to a screen, and a projector control unit for controlling the light source unit 63 and the display device. In addition, this light source unit 63 has a plurality of fan-shaped segment areas on a circular transparent base material 130 which can be controlled to rotate, layers 131 of different phosphors which emit light of predetermined wavelength bands by receiving excitation light being disposed on at least two of the segment areas on the transparent base material 130, and comprises an excitation light source 72 which shines excitation light within a visible light wavelength band on to the phosphors.

A light-emitting device (10) using an LED is proposed. This light-emitting device (10) is provided with a packaging substrate (1), a light-emitting element (2) which is mounted on this packaging substrate (1) with its face down, a fluorescent member (3) that is arranged face to face with a light-extracting surface (S) of the light-emitting element (2) without contacting the light-emitting element (2) and an optical member (4) which receives light that has been emitted from the light-emitting element (2) and made incident thereon through the fluorescent member (3), and aligns the incident light toward the outside of the device. Light, emitted from the light-emitting element (2), is made incident on the fluorescent member (3) to excite the fluorescent material so that the fluorescent material re-emits light having a wavelength different from that of the incident light. Those light rays, emitted from the light-emitting element (2), which have not been absorbed by the fluorescent member (3) and have passed through the fluorescent member (3) and those light rays that have been emitted from the fluorescent material are made incident on the optical member (4) and are aligned. Because the fluorescent member (3) is not made in contact with the light-emitting element (2), it does not receive the heat from the light-emitting element (2) through heat conduction, and consequently becomes less susceptible to degradation due to heat. Moreover, with the face-down mounting structure, the fluorescent member (3) and the optical member (4) can be placed closer to the light-emitting element (2) as long as they dose not contact the light-emitting element (2). Consequently, the service life of the fluorescent material or the fluorescent-material-mixed resin that tends to deteriorate can be lengthened, lights can be extracted more efficiently, and light rays can be properly aligned in a predetermined direction.

An imaging device includes a plurality of pixels each of which includes a microlens, first and second photoelectric conversion portions. The first photoelectric conversion portion is between the microlens and a focal point of the microlens. The second photoelectric conversion portion is at a position being different from that of the focal point on a plane which is parallel to an imaging plane and which contains the focal point, and has a photoelectric conversion region deviated from an optical axis of the microlens in a direction of the imaging plane. The plurality of pixels includes a first pixel group and a second pixel group. The photoelectric conversion region is deviated from the optical axis in the direction in the first pixel group. The photoelectric conversion region is deviated from the optical axis in the direction to be opposite to the first pixel group in the second pixel group.

A method for manufacturing a semiconductor device, including the steps of: forming a shielding film 38 on a first insulating film 37; sequentially forming a second insulating film 39 and an amorphous semiconductor film 40 on the shielding film 38; melting the amorphous semiconductor film 40 at least in portions to be channels of thin-film transistors by irradiating an energy beam onto the amorphous semiconductor film 40, and converting the amorphous semiconductor film 40 into a polycrystalline semiconductor film 41; sequentially forming a gate insulating film 43a and a gate electrode 44a on the polycrystalline semiconductor film 41 on the channels; and forming source and drain regions 41a in the polycrystalline semiconductor film 41 on sides of the gate electrode 44a, and forming a TFT 60 by use of the source and drain regions 41a, the gate insulating film 43a, and the gate electrode 44a.

A semiconductor device (100) comprises a first resin substrate (101) on which a first semiconductor chip (125) is mounted a surface thereof; a second resin substrate (111) on which a second semiconductor chip (131) is mounted on a surface thereof; and a resin base material (109), joined to a front surface of the first resin substrate (101) and to a back surface of the second resin substrate (111), so that these surfaces are electrically connected. The resin base material (109) is disposed in a circumference of the first resin substrate (101) in the surface of the first resin substrate (101). Further, the first semiconductor chip (125) is disposed in a space section provided among the first resin substrate (101), the second resin substrate (111) and the resin base material (109) in the surface of the first resin substrate (101).

A power source apparatus mounted to a vehicle is equipped with a lead-acid battery and a lithium battery. An open circuit voltage and an internal resistance of each of the batteries are determined to satisfy the following conditions (a1), (a2), and (a3): (a1) In the use range of SOC of the lead-acid battery and the use range of SOC of the lithium battery, there is an equal voltage point Vds at which the open circuit voltage V0 (Pb) of the lead-acid battery becomes equal to the open circuit voltage V0 (Li) of the lithium battery; (a2) The relationship of V0 (Li)>V0 (Pb) is satisfied in the upper limit side of the use range of SOC of the battery; and (a3) A terminal voltage Vc (Li) of the lithium battery is not more than a set voltage Vreg of a regulator when a maximum current flows in the lithium battery.

A platoon travel system organizes a platoon having plural platoon vehicles traveling in two vehicle groups, in which a preset inter-vehicle distance is reserved between each of the platoon vehicles. When a new vehicle joins in the platoon, the platoon travel system adjusts the inter-vehicle distance by decelerating, among all platoon vehicles, deceleration target vehicles that are the platoon vehicles behind a join position in the platoon, which are included in a latter one of the two vehicle groups.

A separation layer is provided on a substrate, and a thin film device, such as TFT, is formed thereon. Separation accelerating ions such as hydrogen ions are implanted into the separation layer in the course of the process for forming the thin film device. After the formation of the thin device, the thin film device is preferably joined to a transfer material through an adhesive layer, and irradiated with laser light from the substrate side. This causes separation in the separation layer by also using the action of the separation acceleration ions. The thin film device is separated from the substrate. This permits transfer of a desire thin film device to any substrate.

The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.

In a light emitting device using a light emitting element, the invention provides a sealing structure capable of preventing ingress of moisture from the outside and obtaining adequate reliability. The light emitting device has a light emitting element comprising a light emitting layer formed between a first electrode and a second electrode and a pixel portion comprising the light emitting element. The entire surface of the pixel portion is covered with the second electrode. An impermeable insulating film is formed in contact with the first electrode of the light emitting element. The edge of the first electrode and the impermeable insulating film are covered with a partition wall. An opening is formed along the circumference of the pixel portion in the partition wall. The opening passes through the partition wall in the thickness direction, and the side wall and the bottom face thereof are covered with the second electrode.

The present invention can promote the large capacity, high performance and high reliability of a semiconductor memory device by realizing high-performance of both the semiconductor device and a memory device when the semiconductor memory device is manufactured by stacking a memory device such as ReRAM or the phase change memory and the semiconductor device. After a polysilicon forming a selection device is deposited in an amorphous state at a low temperature, the crystallization of the polysilicon and the activation of impurities are briefly performed with heat treatment by laser annealing. When laser annealing is performed, the recording material located below the silicon subjected to the crystallization is completely covered with a metal film or with the metal film and an insulating film, thereby making it possible to suppress a temperature increase at the time of performing the annealing and to reduce the thermal load of the recording material.

An object of the present invention is to provide a highly reliable display device and a method for manufacturing the display device with a much easy way. According to one aspect of a method for manufacturing a display device of the invention, it comprises the steps of forming a light-emitting element over a first substrate; forming a frame to surround the light-emitting element; dropping a composition containing a liquid hygroscopic substance in a region surrounded with the frame; and forming a layer containing a hygroscopic substance by solidifying the composition, wherein the first substrate and a second substrate are adhered to each other with a sealant so that the light-emitting element, the layer containing a hygroscopic substance, and the frame are sealed between the pair of substrates.

In an exposure apparatus, an exposure of a substrate (P) is carried out by filling at least a portion of the space between a projection optical system (PL) and the substrate (P) with a liquid (50) and projecting the image of a pattern onto the substrate (P) via the projection optical system (PL). An optical element (60) and a barrel (PK), which are in contact with the liquid (50) when the substrate (P) is moved, are surface-treated for adjusting the affinity with the liquid (50). Consequently, generation of bubbles in the liquid between the projection optical system and the substrate is suppressed and the liquid is always retained between the projection optical system and the substrate, thereby creating a good immersion state.

A cleaning process for cleaning a thermal processing apparatus includes: a heating step of heating an interior of a reaction tube at 300° C., and a cleaning step of removing deposits deposited in the thermal processing apparatus. In the cleaning step, a cleaning gas containing fluorine gas, chlorine gas and nitrogen gas is supplied into the interior of the reaction tube heated at 300° C. to remove silicon nitride so to clean an interior of the thermal processing apparatus.

The purpose of the invention is to improve reliability of a light emitting apparatus including a TFT and organic light emitting elements. The light emitting apparatus according to the invention having a thin film transistor and a light emitting element includes a first inorganic insulation layer on the lower surface of a semiconductor layer, a second inorganic insulation layer on the upper surface of a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, a wiring layer extending on the third inorganic insulation layer, a second organic insulation layer overlapped with the end of the wiring layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the wiring layer, a cathode layer formed in contact with the wiring layer and having side end overlapped with the fourth inorganic insulation layer, and an organic compound layer formed in contact with the cathode layer and the fourth inorganic insulation layer and including light emitting material, and an anode layer formed in contact with the organic compound layer including the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.

A solar battery module device (14), wherein an bottom-side end part (22) is fixed onto a placing surface (23) by fitting the top-side end part (19) as one-side of a rectangular shape of a rectangular flat plate-like solar battery module (16) to the engagement part (20) of an upper frame (21) forming a frame (17) from the lower side of a roofer and by fitting a fixing cover (27) to a lower frame (24) in a state in which the bottom-side end part (22) as the opposite-side of the rectangular shape of the solar battery module (16) is placed on the placing surface (23) of the lower frame (24) forming the frame (17). According to the solar battery module device of the present invention, operations such as installation work and maintenance and inspections for the device can be easily and safely performed without damaging the solar battery module (16).