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36results about How to "Low ion density" patented technology

Semiconductor process equipment

The invention provides semiconductor process equipment, and the equipment comprises a process chamber provided with a process cavity, wherein the process cavity comprises a generation cavity for generating plasma and a processing cavity for processing a wafer; a filtering structure and a direct-current power supply, wherein the filtering structure comprises a first filtering part, the first filtering part is arranged between the generating cavity and the processing cavity, is provided with a plurality of first through holes for communicating the generating cavity with the processing cavity, and is made of a conductive material, and the direct-current power supply is electrically connected with the first filtering part, and a negative voltage is applied to the first filtering part through the direct-current power supply; when the plasma passes through the first filtering part, the plasma is filtered through the multiple first through holes, and at least part of ions in the plasma are compounded under the action of the negative voltage, so that the number of ions in the plasma entering the processing cavity after filtering is reduced. According to the invention, the influence on the number of free radicals entering the processing cavity can be reduced as much as possible while the number of ions entering the processing cavity is reduced.
Owner:BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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