53results about How to "Improve etch uniformity" patented technology

The invention relates to the technical field of laser etching, and discloses a high-precision laser etching parameter adjusting method and device, and the method comprises the steps: obtaining basic parameters and preliminary processing parameters of a processing material; according to the preliminary processing parameters, equipment is controlled to perform sample preparation to obtain a processing sample plate of the processing material, and etching depth measurement operation is performed on the surface of a photoetching structure of the processing sample plate to obtain the etching depth of the processing sample plate; performing data processing operation according to the etching depth to obtain an average etching rate; establishing a relation model of laser etching data by utilizing a linear regression formula according to the average etching rate; performing laser power adjustment operation according to the relation model and the basic parameters to obtain a laser power adjustment scheme; and according to the laser power adjustment scheme, completing adjustment of process parameters of all the processing materials. By means of the method, finer technological parameter setting can be achieved, and the high-precision machining requirement is met.

The invention discloses an electric field distribution adjusting device which comprises a first shielding plate and a second shielding plate. The first shielding plate is provided with a hollow hole; the second shielding plate is connected with the first shielding plate, and the two shielding plates can move relatively; and when the second shielding plate moves relative to the first shielding plate, the opening degree of the hollow hole can be adjusted. And the first shielding plate and the second shielding plate can shield an electric field respectively. The electric field distribution adjusting device is provided with two shielding plates capable of shielding an electric field, the two shielding plates can move relatively, the second shielding plate adjusts the opening degree of a hollow hole in the first shielding plate in the relative movement process, and then the shielding degree of the electric field generated by a plasma coupling coil of the plasma etching machine is adjusted. When the etching uniformity of the plasma etching machine is not good, the etching uniformity is improved by changing the electric field. The invention further discloses a plasma etching machine applying the electric field distribution adjusting device, the etching uniformity can be improved by changing the electric field, and the etching effect is improved.

The invention belongs to the technical field of electronic chemicals, and particularly discloses a long-life double-agent copper etching solution which comprises a solution A and a solution B, the liquid A comprises the following components in percentage by mass: 1-6% of copper salt, 1-12% of acid, 1-20% of organic alkali, 0.01-5% of a surfactant and the balance of water; and compared with the solution A, the solution B only replaces the copper salt with the organic acid with the corresponding molar content, other raw materials are consistent, and organic alkali is added to adjust the pH to 6.2-6.8. According to the double-dosage-form copper etching solution containing the solution A and the solution B, the etching life of the solution A is continuously updated by adding the solution B, the service life of the etching solution is prolonged, and redundant technological processes are reduced, so that the production cost is saved, and the production efficiency is improved.

The invention discloses full-automatic polishing and etching equipment, and relates to the technical field of automatic glass etching equipment. Comprising a feeding station, a first cleaning station, an alkali polishing station, a second cleaning station and a discharging station which are sequentially distributed in the first direction. Each of the first cleaning station, the alkali polishing station and the second cleaning station comprises a plurality of functional tanks; the plurality of functional tanks are all provided with bubbling assemblies and liquid circulation assemblies, and a throwing mechanism is arranged in the functional tank of the alkali polishing station; the glass basket is used for loading glass; the transferring assembly is used for driving the glass to move along a first direction and a vertical direction; the glass basket comprises two side plates, limiting rods and a first connecting rod, the limiting rods and the first connecting rod are arranged between the two side plates, the two sides of the glass are limited between the limiting rods, the bottom of the glass abuts against the first connecting rod, and a plurality of limiting grooves are distributed in the limiting rods in the second direction; according to the technical scheme provided by the invention, the etching efficiency and the etching quality of the glass can be effectively improved.

The invention provides a deep trench manufacturing method, a semiconductor structure, a chip and a circuit, and relates to the technical field of semiconductors. The manufacturing method comprises the following steps: forming a hard mask layer with an etching window on the upper surface of a substrate; performing at least one time of substrate etching on the substrate by using the etching window to form a target deep trench; the step of etching the substrate comprises the following steps of: performing ion implantation on the substrate for multiple times through the etching window to form a modified region; the design size of the modification area is the same as that of the sub-target groove; the ion implantation angle is gradually increased; etching the modified region to form a sub-target groove; if the depth of the sub-target groove is smaller than that of the target deep groove, next substrate etching is carried out; the etching strength of the substrate is gradually increased; and if the depth of the sub-target groove is equal to the depth of the target deep groove, taking the sub-target groove as the target deep groove. According to the invention, the groove wall inclination of the deep groove can be reduced, the etching uniformity of the deep groove is improved, the morphology of the deep groove is improved, and the performance and reliability of the device are improved.

The utility model belongs to etching process technical field, concretely is an intelligent etching process regulation and control device based on steel type identification, including etching section, the etching section is provided with telescopic shower nozzle, the telescopic shower nozzle includes a plurality of outer tubes of rectangular array, the outer tube lower tube layer is opened with circular ring sliding slot, the circular ring sliding slot inner wall both sides are opened with square hole, the circular ring sliding slot inner wall is connected with the inner conveying pipe of sliding, the inner conveying pipe lower fixed connection has the shower nozzle, the inner conveying pipe upper both sides are fixedly connected with the sliding block, reduces the shower nozzle height through drive mechanism, shortens etching liquid injection distance, promotes liquid flow impact pressure dynamic energy and distance square inverse ratio, satisfies the oxidation layer breaking demand of high hardness steel, aims at the low carbon steel of easy over etching, raises the shower nozzle height, weakens liquid flow impact, avoids etching depth to exceed the standard, realizes "one device adapts many steel", need not to change special shower nozzle or equipment.

The utility model provides a pump plate assembly used in a cavity, a cavity and a semiconductor device, the pump plate assembly comprises a pump ring and an air flow control assembly, the pump ring is arranged in a cavity and is provided with an air flow channel used for releasing preset air in the cavity out of the cavity; the airflow channel is provided with a plurality of airflow inlets formed in the face, close to the surrounding area, of the pump ring so that preset gas can be guided into the airflow channel through the airflow inlets to be released, and the airflow control assembly is arranged in the airflow channel. The airflow control assembly communicates with the airflow inlets so as to control the consistency of the flow of gas released after the gas flows through the airflow inlets. According to the pump plate assembly, preset gas release consistency can be achieved, the wafer surface etching uniformity can be improved when the pump plate assembly is applied to a semiconductor cleaning cavity, and good technological adaptability and applicability are met further through flexible design of the structure of the gas flow control assembly. The process stability, the product quality and the yield of the cavity and the semiconductor device are all effectively improved.

The utility model provides a focusing ring assembly, a lower electrode structure and a semiconductor device, the focusing ring assembly comprises a focusing ring main body and an annular electrode, the focusing ring main body can be arranged on a bearing part used for bearing a wafer and can be arranged around a bearing surface of the bearing part used for bearing the wafer, and the annular electrode is arranged on the focusing ring main body. An annular accommodating groove is formed in the bottom of the focusing ring main body; and the annular electrode is accommodated in the accommodating groove and can be electrically connected with a lower radio frequency source for providing lower radio frequency. According to the focusing ring assembly, the lower electrode structure and the semiconductor equipment provided by the utility model, the direction and the speed of bombarding the edge of the wafer by the plasma are the same as the direction and the speed of bombarding the middle part of the wafer, so that the etching uniformity of the wafer can be improved.

The embodiment of the invention provides a light emitting diode capable of improving etching uniformity and a preparation method thereof, and belongs to the technical field of semiconductors. The preparation method comprises the steps that an epitaxial lamination layer is formed on a substrate, the substrate is provided with a center area and a first annular area which are connected, and the first annular area is located on the periphery of the center area; the epitaxial laminated layer is etched to form a plurality of light-emitting structures arranged in an array mode, the light-emitting structures are located in the center area and the first annular area, and a cutting channel is formed between every two adjacent light-emitting structures; removing the light-emitting structure in the first annular region; and cracking the substrate along the cutting channels to obtain a plurality of light-emitting diodes. According to the embodiment of the invention, the etching uniformity of the LED can be improved, and the uniformity of the light-emitting effect of the LED is improved.

The invention provides a wet etching groove with a special shape and application thereof in wet etching equipment. The groove type wet etching equipment comprises an etching groove, a wafer support used for bearing wafers and a liquid inlet pipeline used for injecting etching liquid into the etching groove. The shape of the etching groove is obtained by symmetrically trimming and deforming the front side and the rear side of the top and the bottom of the cuboid etching groove, and the length of the deformed etching groove with the special shape is gradually reduced from the middle to the top end and the bottom end in the vertical direction. According to the invention, the flow velocity of the etching liquid on the surface of the wafer can be improved, and the flow field distribution is improved, so that the uniformity of wet etching is improved, and the product yield is improved.

The invention relates to the technical field of printed circuit board fine circuit preparation, in particular to a method for preparing a PCB fine circuit through efficient pulse electrolytic chemical synergy etching, according to the method for preparing the PCB fine circuit through etching, high pulse peak current density is generated through one-way pulse current, use of reverse pulse current is avoided, and the circuit quality is improved. And meanwhile, the current control is simplified. Moreover, through the synergistic effect of the high pulse peak current density and the limited duty ratio, under the high pulse peak current density, the electrolytic etching speed can be increased, the electrolytic etching time can be greatly shortened, the corrosion effect of chemical etching on the circuit is relatively weakened, and the side corrosion of the circuit is small. Due to the fact that the electrolytic etching speed is high, the electrolytic etching time is short, electrolytic etching is used as a leading part, and chemical etching is used as a supplement part, a corrosion inhibitor does not need to be used in the electrolytic etching solution, and the method has the advantages of being simple in process, low in preparation cost, high in etching speed, good in etching uniformity, high in production efficiency and good in circuit quality and reliability.

The utility model provides a kind of line arrangement frame of IBE ion beam etching equipment, line arrangement frame includes first layer board, second layer board sequentially arranged from bottom to top;First layer board is equipped with liquid supply component;Second layer board is equipped with gas supply component, realize the complete isolation of liquid path and gas path in space, even if liquid leakage, also can not permeate gas path, significantly reduce cross contamination and security risk;While liquid inlet chamber and liquid outlet chamber are respectively connected to processing chamber equipment by manual ball valve parallel liquid supply and liquid return;With liquid flow detection meter, it can ensure that each chamber obtains stable, uniform process liquid, improve temperature control and etching uniformity;Compressed air component, nitrogen component are gathered by valve island, and the output end of valve island is respectively connected to each pneumatic actuating mechanism, to realize one-stop piping;Only need to operate at valve island when fault or maintenance, without disassembling one by one, can greatly shorten downtime.

The present invention discloses a hole for adjusting ion etching uniformity, comprising a cap and a rod, wherein one end of the rod is fixedly connected to the cap, a notch is arranged on the side of the rod, the rod is connected to a position on the cap deviating from the center of the cap, the width of the notch is equal to the thickness of a metal sheet of a grid, a plurality of notches are arranged on the rod, the plurality of notches are evenly distributed along the length direction of the rod, the spacing between two adjacent notches is equal to the spacing between two adjacent metal sheets of the grid, the hole can be conveniently inserted into the hole of the metal sheet on the grid, and a stable structure is formed with the grid, so as to conveniently and quickly adjust the local ion concentration of the ion source grid, and quickly optimize the etching uniformity.

The utility model provides a compensation ring structure for compensating fringe effect and improving etching uniformity. Comprising an etching tray, a GaAs wafer to be etched is fixed to the center of the etching tray through heat conduction silicone oil, the outer side of the GaAs wafer to be etched is sleeved with an etching compensation ring, and the etching structure environment is filled with mixed gas. An etching compensation ring with the same height as the etched wafer is customized, and the inner diameter of the etching compensation ring is slightly larger than the outer diameter of the wafer. During etching, the periphery of the wafer is sleeved with the etching compensation ring, the purpose of enlarging the equivalent area of the wafer is achieved, and the effects of compensating the edge effect and improving the etching uniformity are achieved. According to the process, only an etching compensation ring consumable material needs to be customized in advance according to the size of the wafer, no additional process steps are added, the operation is simple and easy to implement, the production cost is low, and the method for compensating the edge effect and improving the etching uniformity is low in cost, simple and easy to implement.

The invention discloses a copper foil etching solution as well as a preparation method, a use method and application thereof. According to the copper foil etching solution, in every 1L of water, the addition amount of copper sulfate pentahydrate is 100g to 200g, the addition amount of a substance containing ammonium ions is 200ml to 500ml, and the addition amount of ammonium fluoride is 50g to 80g. The copper foil etching solution provided by the invention has high etching rate and high etching quality, has wide application prospects in the electronic material processing fields of printed circuit board manufacturing, electronic component production and the like, and can effectively meet the requirements of the industry on an efficient and environment-friendly etching process.

The invention discloses a processing method of a PCB (Printed Circuit Board). The processing method comprises the following steps: data preparation: providing a 2oz copper-clad plate; an outer layer dry film: continuously pasting two layers of dry films with the thickness of 2mil on the copper-clad plate to obtain a first substrate with the dry film thickness of 4mil; exposure and development: carrying out exposure and two-time development on the first substrate to obtain a second substrate; pattern electroplating: performing copper plating and tin plating on the second substrate twice to obtain a third substrate; and etching the outer layer: carrying out two times of film stripping, two times of etching and tin stripping on the third substrate to obtain the PCB of which the copper thickness is 6oz and the ratio of the line width to the copper thickness is 1: 1. According to the processing method of the PCB, the PCB with the copper thickness being 6 oz and the ratio of the line width to the copper thickness being 1: 1 can be produced, line throwing and deformation are avoided after lead-free tin spraying, the production requirement is met, and the production procedure is simple and easy to operate.

The invention relates to a buffer oxidation etching solution for thinning a quartz wafer. The buffer oxidation etching solution comprises 10%-20% of hydrofluoric acid, 15%-35% of ammonium fluoride, 0.1%-5% of an alcohol compound, 0.1%-2% of organic acid and the balance ultrapure water. The etching solution is used for maintaining a proper etching rate for the quartz wafer, the etched quartz wafer has good morphology and etching roughness, and triangular pyramid structure protrusions existing on the surface of the wafer after conventional BOE etching are improved.

The present application discloses a rotary self-cleaning etching device, comprising a working room, a dielectric cover, a carrier, a carrier, a coil, an inner cover, a rotary drive, a lifting drive and a lifting assembly, wherein a shielding edge is provided at the bottom of the inner cover, which can prevent pollutants from entering the working room; a soft metal film is attached to the surface of the inner cover, which can reliably and efficiently capture pollutants generated during the etching process, thereby ensuring the cleanliness of the etching environment and the effect of wafer surface treatment; the rotating drive drives the carrier to rotate, which can improve the uniformity of coating and etching; the lifting assembly enables the inner cover to rotate with the carrier, which can avoid the inner cover and the dielectric cover from sticking and the perforation from being blocked, and can also throw off pollutants with poor adhesion, thereby further ensuring the cleanliness of the environment in the cavity; a cleaning member is provided on the outer wall of the inner cover, which can rotate and clean the dielectric cover by the cleaning member, and can also achieve self-cleaning of the cavity wall, thereby reducing the need for stopping the machine for unpacking.

The invention relates to a titanium etching solution, a preparation method thereof and application of the titanium etching solution in surface treatment of a semiconductor ceramic plate. The titanium etching solution comprises the following raw materials by weight: 1.8-3.0% of an inorganic base; 4.0 to 10.0% of hydrogen peroxide; 0.5%-1.0% of a stabilizing agent; 0.05 to 0.3 percent of a copper surface protective agent; 0.2 to 0.6 percent of an accelerator; and the balance of deionized water. The preparation method of the titanium etching liquid specifically comprises the following steps that the raw materials of the components are provided, and the deionized water, the inorganic base, the hydrogen peroxide, the stabilizer, the copper surface protective agent and the accelerator are sequentially added into an etching tank and stirred for 5-10 min. When the titanium etching solution provided by the invention is applied to surface treatment of a semiconductor ceramic plate, titanium is removed at a constant temperature of 50-60 DEG C during etching treatment, and the time of etching treatment is 30-100 seconds. The titanium etching solution provided by the invention is good in etching uniformity, high in etching rate and high in etching factor.

This invention provides a method, apparatus, and semiconductor device for atomic layer etching of hafnium oxide. The method includes performing multiple cycles of etching on the hafnium oxide layer on the top surface of the device to be etched within a reaction chamber until the hafnium oxide layer reaches the target etching requirement. Each cycle includes: adjusting the temperature of the device to be etched to a target reaction temperature; providing a process gas containing a chlorine-based gas; dissociating the process gas into a plasma containing ions and chlorine radicals; filtering the ions in the plasma to obtain chlorine radicals, and reacting the chlorine radicals with the top surface of the hafnium oxide layer at the target reaction temperature to generate a hafnium tetrachloride layer; and heating the device to be etched to a target sublimation temperature to vaporize and discharge the hafnium tetrachloride layer. This invention can reduce the damage to hafnium oxide during etching and achieve higher etching uniformity and precision.

The invention provides an etching device which comprises a plurality of conductive coils, a first radio frequency power supply, a second radio frequency power supply, a magnet and a conductive platform deck, the conductive platform deck is provided with a bearing surface, the plurality of conductive coils are arranged on one side of the conductive platform deck and face the bearing surface, the conductive coils are electrically connected with the first radio frequency power supply, and the magnet is arranged on the first radio frequency power supply. The conductive coil is electrically connected with a first radio frequency power supply and used for ionizing gas introduced into the etching device and generating plasma, the conductive carrier is electrically connected with a second radio frequency power supply and used for increasing the moving speed of the plasma, and the magnet is arranged on the side, away from the conductive carrier, of the conductive coil. The etching device provided by the invention can be used for etching the to-be-etched parts with various sizes, the etching speed and the etching uniformity are good, the etching effect is good, and the use of the etched to-be-etched parts is facilitated. The invention further provides an etching process.

The application discloses a substrate etching method and device. The substrate etching method comprises the following steps: immersing a substrate into a processing tank containing an etching solution, wet etching the substrate by the etching solution, and forming a deep structure on the surface of the substrate; and providing a gas into the etching solution based on a pulse signal to generate bubbles in the etching solution, wherein one pulse time of the pulse signal comprises a gas supply period and an intermittent period, and the intermittent period depends on a diffusion time required for a key component in the deep structure to reach a diffusion equilibrium after the end of the gas supply period.

The embodiment of the utility model provides a wafer fixing device and a wafer etching device, and relates to the technical field of semiconductors. The wafer fixing device comprises a bearing disc and an edge ring. The bearing disc is used for placing wafers. The edge ring is arranged around the edge of the bearing disc and comprises a first surface and a second surface which are oppositely arranged, the first surface and the wafer are located on the same side of the bearing disc, and the first surface gradually gets close to the second surface in the direction away from the bearing disc. By performing simple structural deformation on the edge ring, the problem that polymer and reflected plasma are transmitted to the edge of the wafer to cause interference on etching of the edge of the wafer is avoided, and the overall etching uniformity of the wafer is further improved.

The present invention belongs to the field of integrated circuit electronic chemicals, and specifically relates to an etching solution for selectively etching an AlCu layer relative to a laminated metal and a preparation method thereof. The etching solution is mainly used for selectively etching an AlCu alloy layer relative to a laminated metal (composed of a photoresist, an AlCu alloy layer, a W layer, a TiN layer and a Ti layer from top to bottom), and its composition includes an oxidant, a corrosive agent, an additive, a complexing agent, a leveling agent and ultrapure water. The present invention provides an etching solution for selectively etching an AlCu layer relative to a laminated metal and a preparation method thereof. The use of the etching solution according to the method can not only effectively control the etching of the AlCu layer in the laminated metal while other metal layers are not etched, but also has high etching accuracy and good etching morphology, and has no damage to the electrochemical properties of the substrate.

The utility model discloses a spray header structure and a plasma etching system. The spray header structure comprises a mounting seat and at least one blocking needle. The mounting base is provided with a plurality of first through holes, and a blocking needle is arranged in at least one first through hole. Wherein at least part of the blocking needles are provided with second through holes, the direction in which the blocking needles are inserted into the first through holes is the first direction, and the second through holes penetrate through the blocking needles in the first direction. The spray header structure provided by the utility model can finely adjust the passing airflow, thereby improving the etching uniformity of a plasma etching system using the spray header structure provided by the utility model.

The invention relates to a polycrystalline silicon etching solution, which is prepared from the following components in percentage by mass: 0.1 to 2.38 percent of quaternary ammonium salt compounds, 1 to 40 percent of alcohol amine compounds, 1 to 40 percent of polyhydric alcohol compounds, 0.1 to 2 percent of etching accelerant and the balance of deionized water. The sum of the parts by weight of the components is 100%. The alcohol amine compound and the polyhydric alcohol compound have a synergistic effect, so that the etching rate of SiO2 can be effectively reduced; the etching accelerator can improve the etching rate of the polycrystalline silicon, improve the etching uniformity and improve the surface roughness of the polycrystalline silicon.

The invention relates to the technical field of semiconductors, and discloses etching equipment and a voltage control method thereof. Wherein an etching cavity is formed in an etching main body of the etching equipment; the pressure control unit comprises an upper pressure control ring and a lower pressure control ring, a limiting piece is arranged on the etching main body, and the upper pressure control ring is arranged on the upper surface of the limiting piece or the lower pressure control ring; a driving part of the driving unit is used for driving the lower pressure control ring to move in the vertical direction; the control unit comprises a detection assembly, and when the detection assembly detects that the pressure in the etching cavity is a first preset pressure, the driving piece can drive the lower pressure control ring to move at a first preset speed; and when the detection assembly detects that the pressure in the etching cavity is a second preset pressure, the driving piece can drive the lower pressure control ring to move at a second preset speed, so that the air pressure in the etching cavity dynamically and stably keeps the working pressure, and the first preset speed is greater than the second preset speed. The moving speed of the pressure control unit is controlled according to the real-time pressure value in the etching cavity, and the pressure control effect is better.

The invention discloses PCB (printed circuit board) multi-layer board etching processing equipment, which belongs to the technical field of etching processing, and comprises a wet etching chamber, a combined conveying part used for conveying PCBs is arranged in an etching tank, a multi-surface etching group seat used for bearing the PCBs is uniformly arranged on the combined conveying part, an outer liquid inner feeding etching assembly is arranged on the multi-surface etching group seat, and an outer liquid inner feeding etching assembly is arranged on the outer liquid inner feeding etching assembly. The conveying device is used for conveying the etching liquid from a high-concentration area to a low-concentration area. According to the invention, by arranging the external liquid internal feeding etching assembly, the equipment can actively spray an external high-concentration etching liquid to a low-concentration area among a plurality of PCBs in a circulating and high-pressure manner, and through an original etching liquid active circulating updating mechanism, in combination with a pre-spraying defoaming process and a high-efficiency automatic batch clamping and conveying system, the etching efficiency of the PCBs is improved. The problems of uniformity, bubbles and efficiency bottlenecks in etching of the multi-layer PCB are successfully solved, and high-quality, high-efficiency and high-stability etching processing is realized.

The present invention specifically relates to a TiN and Ti metal film etching solution and a preparation method thereof. The etching solution mainly comprises an oxidant, a stabilizer, an ammonium salt, an oxygen promoter, a surfactant and acetic acid. The etching solution uses an oxidant to oxidize TiN and Ti to form oxides for etching; the ammonium salt can be used as a corrosion inhibitor to complex with metal ions; an inorganic acid or an organic acid is used as a secondary oxidant to increase the oxidizing property of the oxidant and provide sufficient hydrogen ions, so that the concentration of the oxidant is maintained at a high level, the etching rate is maintained stable, and the use / storage life of the etching solution is extended; the surfactant can reduce the surface tension of the solution and promote the etching uniformity and integrity of TiN and Ti. The etching solution used according to the method of the present invention can ensure that the etching rates of the TiN metal film and the Ti metal film are basically the same (the difference between the etching rates of the two is ≤17 Å / min).

An etching apparatus includes: an electrostatic chuck for holding a wafer to be etched, wherein when the wafer is placed on the surface of the electrostatic chuck, the edge of the wafer protrudes from the sidewall of the electrostatic chuck; and an edge ring surrounding the electrostatic chuck, the edge ring including an inner ring region and an outer ring region, the outer ring region surrounding the inner ring region, the top surface of the inner ring region being lower than the top surface of the outer ring region, the top surface of the inner ring region being parallel to the surface of the electrostatic chuck, the top surface of the outer ring region being inclined relative to the top surface of the inner ring region, and the height of the top surface of the outer ring region gradually increasing along a first direction, the first direction being parallel to the surface of the electrostatic chuck and away from the electrostatic chuck, which can effectively improve etching uniformity.