13results about How to "Improve etch uniformity" patented technology

This invention provides a method, apparatus, and semiconductor device for atomic layer etching of hafnium oxide. The method includes performing multiple cycles of etching on the hafnium oxide layer on the top surface of the device to be etched within a reaction chamber until the hafnium oxide layer reaches the target etching requirement. Each cycle includes: adjusting the temperature of the device to be etched to a target reaction temperature; providing a process gas containing a chlorine-based gas; dissociating the process gas into a plasma containing ions and chlorine radicals; filtering the ions in the plasma to obtain chlorine radicals, and reacting the chlorine radicals with the top surface of the hafnium oxide layer at the target reaction temperature to generate a hafnium tetrachloride layer; and heating the device to be etched to a target sublimation temperature to vaporize and discharge the hafnium tetrachloride layer. This invention can reduce the damage to hafnium oxide during etching and achieve higher etching uniformity and precision.

The application discloses a substrate etching method and device. The substrate etching method comprises the following steps: immersing a substrate into a processing tank containing an etching solution, wet etching the substrate by the etching solution, and forming a deep structure on the surface of the substrate; and providing a gas into the etching solution based on a pulse signal to generate bubbles in the etching solution, wherein one pulse time of the pulse signal comprises a gas supply period and an intermittent period, and the intermittent period depends on a diffusion time required for a key component in the deep structure to reach a diffusion equilibrium after the end of the gas supply period.

The embodiment of the utility model provides a wafer fixing device and a wafer etching device, and relates to the technical field of semiconductors. The wafer fixing device comprises a bearing disc and an edge ring. The bearing disc is used for placing wafers. The edge ring is arranged around the edge of the bearing disc and comprises a first surface and a second surface which are oppositely arranged, the first surface and the wafer are located on the same side of the bearing disc, and the first surface gradually gets close to the second surface in the direction away from the bearing disc. By performing simple structural deformation on the edge ring, the problem that polymer and reflected plasma are transmitted to the edge of the wafer to cause interference on etching of the edge of the wafer is avoided, and the overall etching uniformity of the wafer is further improved.

The invention discloses PCB (printed circuit board) multi-layer board etching processing equipment, which belongs to the technical field of etching processing, and comprises a wet etching chamber, a combined conveying part used for conveying PCBs is arranged in an etching tank, a multi-surface etching group seat used for bearing the PCBs is uniformly arranged on the combined conveying part, an outer liquid inner feeding etching assembly is arranged on the multi-surface etching group seat, and an outer liquid inner feeding etching assembly is arranged on the outer liquid inner feeding etching assembly. The conveying device is used for conveying the etching liquid from a high-concentration area to a low-concentration area. According to the invention, by arranging the external liquid internal feeding etching assembly, the equipment can actively spray an external high-concentration etching liquid to a low-concentration area among a plurality of PCBs in a circulating and high-pressure manner, and through an original etching liquid active circulating updating mechanism, in combination with a pre-spraying defoaming process and a high-efficiency automatic batch clamping and conveying system, the etching efficiency of the PCBs is improved. The problems of uniformity, bubbles and efficiency bottlenecks in etching of the multi-layer PCB are successfully solved, and high-quality, high-efficiency and high-stability etching processing is realized.

An etching apparatus includes: an electrostatic chuck for holding a wafer to be etched, wherein when the wafer is placed on the surface of the electrostatic chuck, the edge of the wafer protrudes from the sidewall of the electrostatic chuck; and an edge ring surrounding the electrostatic chuck, the edge ring including an inner ring region and an outer ring region, the outer ring region surrounding the inner ring region, the top surface of the inner ring region being lower than the top surface of the outer ring region, the top surface of the inner ring region being parallel to the surface of the electrostatic chuck, the top surface of the outer ring region being inclined relative to the top surface of the inner ring region, and the height of the top surface of the outer ring region gradually increasing along a first direction, the first direction being parallel to the surface of the electrostatic chuck and away from the electrostatic chuck, which can effectively improve etching uniformity.

A capacitively coupled plasma etching apparatus includes an etching chamber, a plasma generation chamber, a first electrode, a first comb-shaped electrode, a second comb-shaped electrode, and a second electrode. The plasma generation chamber is located on the etching chamber. The first electrode, the first comb-shaped electrode, the second comb-shaped electrode, and the second electrode are located within the plasma generation chamber. The first electrode is located on the second electrode. The first comb-shaped electrode and the second comb-shaped electrode are located between the first electrode and the second electrode. The first comb-shaped electrode includes a plurality of third electrodes. The second comb-shaped electrode includes a plurality of fourth electrodes. The plurality of third electrodes and the plurality of fourth electrodes are arranged alternately.

The application discloses a method for improving etching uniformity, S1: taking the phase angle in the case of etching eccentricity as a reference phase angle, and obtaining an etching rate distribution diagram of the reference phase angle; S2: setting a plurality of different radio frequency phase angles for etching a wafer in a preset scanning range with a preset step length, and obtaining an etching rate distribution diagram of each radio frequency phase angle; S3: taking the etching rate distribution diagram corresponding to the reference phase angle as a reference, performing difference value operation on the etching rate distribution diagrams of the remaining radio frequency phase angles respectively, and obtaining a difference value rate distribution diagram of each radio frequency phase angle; S4: calculating a range of each difference value rate distribution diagram respectively; S5: selecting a corresponding radio frequency phase angle with a range value greater than a judgment threshold as a candidate radio frequency phase angle; and S6: performing etching test on each candidate radio frequency phase angle, obtaining a corresponding key size distribution diagram, and determining an optimal radio frequency phase angle. The method effectively improves the problem of etching eccentricity, and improves wafer etching uniformity and product yield.

This utility model relates to the field of solar cell technology, specifically disclosing an etching apparatus. The apparatus includes: an etching unit comprising a substrate, wherein a liquid flow channel is provided on the substrate, the liquid flow channel having a supply port for providing etching solution and a drain port for discharging etching solution; and a liquid flow generating device configured to generate a liquid flow of etching solution, the liquid flow direction being from at least one of the supply ports into the liquid flow channel and from at least one of the drain ports out of the liquid flow channel. Compared with the prior art, the contact interface between the etching solution and the silicon wafer of this utility model is more uniform and stable, which can effectively improve etching uniformity, reduce over-etching rate, improve etching effect, and thus improve the performance and quality of the processed silicon wafer. At the same time, the overall structure of this utility model is simpler, the production precision requirements of the apparatus are lower, effectively reducing equipment costs and manufacturing difficulty, and facilitating industrial production.

The invention discloses a rotation adjusting type ion beam etching uniformity correction structure, and relates to the technical field of semiconductors, the rotation adjusting type ion beam etching uniformity correction structure comprises a reaction cavity, a first motor is fixedly installed on the back surface of the reaction cavity, the output end of the first motor penetrates and extends into the reaction cavity, and the output end of the first motor is fixedly connected with a carrying table; a rotating seat mechanism and a lifting clamping mechanism are mounted in the carrying table, a feeding port is formed in one side of the carrying table, an ion source is arranged on one side of the reaction cavity, and the output end of the ion source faces the carrying table; and the correction mechanism comprises a second motor, a connecting plate and a correction plate, the second motor is fixedly installed in the carrying table, and the output end of the second motor penetrates and extends to the front face of the exterior of the carrying table. Through the dynamic adjustment of the correction mechanism and the synergistic effect of all the mechanisms, the etching uniformity is effectively improved, the structure is simple, installation is convenient and fast, adaptability is high, and the machining requirement of a high-precision semiconductor device can be met.

The invention discloses a display panel and a display device. The display panel comprises a substrate, a gate drive circuit and a plurality of sub-pixel circuits. A grid driving circuit of the display panel comprises a plurality of driving units which are arranged in a cascade mode, effective driving units in the driving units are electrically connected with sub-pixel circuits, virtual driving units in the driving units are disconnected with the sub-pixel circuits, and the virtual driving units do not have an output function. The dummy driving units may input shift signals to the corresponding active driving units. Therefore, the partial structure of the virtual driving unit is similar to that of the effective driving unit, so that the etching uniformity of the gate driving circuit can be improved, the deviation of the line width and the thickness of the lines formed by etching in different areas of the gate driving circuit is reduced, and the reliability of the gate driving circuit is improved. And the load uniformity of the shift signals accessed by the plurality of effective driving units can be improved, so that the stability of the display panel can be improved.

The present disclosure provides a method for improving the etching process of a display backplane, comprising: before loading the display backplane by the support column, adjusting the height of the support column so that the top surface of the support column and the top surface of the electrode are in the same plane, simulating the magnetic field environment provided when etching the display backplane, energizing the support column and the electrode, adjusting the power supply parameters of the support column until the electric field and / or magnetic field intensity in the target area reaches the uniformity standard, and recording the final determined power supply parameters of the support column; loading the display backplane by the support column, adjusting the height of the support column so that the top surface of the support column and the top surface of the electrode are in the same plane, energizing the electrode to adsorb the backplane, energizing the support column according to the previously determined power supply parameters of the support column to generate an electric field and / or a magnetic field, and continuously supplying power to the support column and the electrode during the etching process of the display backplane; wherein the top surface of the electrode and the top surface of the support column are the contact surfaces in contact with the display backplane. The method provided herein can improve the etching uniformity of the display backplane.

This utility model provides an etching support device and etching equipment, relating to the field of etching technology. The etching support device includes a heating base and an electrostatic suction cup. The heating base has a receiving groove at its center. The electrostatic suction cup is disposed in the receiving groove, with its top protruding from the heating base and having an adsorption surface for adsorbing the wafer. The heating base surrounds the periphery of the electrostatic suction cup and is configured to heat the periphery of the electrostatic suction cup and the wafer, thereby improving the plasma distribution during wafer etching. Compared to the prior art, the etching support device provided by this utility model can effectively improve etching uniformity and alleviate the problem of over-etching at the wafer edges.

The utility model provides semiconductor equipment. The semiconductor equipment comprises a plasma reaction chamber, a flow control structure, an air nozzle and a plasma coupling coil, the flow control structure is arranged in the plasma reaction chamber, and the flow control structure is arranged between the etching target and the air nozzle; the flow control structure comprises an inclined side wall, the intersection point of the extension lines of the inclined side wall is located on one side of the etching target, and the side, close to the etching target, of the inclined side wall surrounds to form a vent hole, namely, the size of the lower end of the inclined side wall is smaller, and the lower end of the inclined side wall surrounds to form a vent hole; the flow control structure is used for limiting the plasma around the etching target, namely, the inclined side wall is used for guiding the plasma formed by the reaction gas to the lower end of the inclined side wall, and the plasma is guided to the periphery of the etching target through the vent hole formed by surrounding the lower end of the inclined side wall. Therefore, high-density plasma is gathered around the etching target, and the etching uniformity of the etching target is finally improved.