671 results about "Source structure" patented technology

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A heat dissipating LED signal lamp emitting structure includes an isothermal board, a light emitting unit on the isothermal board, a heat conducting cylinder connected to the bottom of the isothermal board, a heat dissipating body around the periphery of the heat conducting cylinder and comprised of heat sinks, a circular cover body above the isothermal board for covering the isothermal board, a reflecting groove at the center of the cover body for passing through the light emitting unit, and a transparent lid on the cover body for covering the light emitting unit. With the heat dissipating effect of the heat dissipating body, the operating heat produced by the light emitting unit can be dissipated to the outside. The invention not only uses a single light emitting unit as a signal lamp emitting source, but also enhances the light emitting efficiency and the life expectancy of the light emitting unit.

An apparatus with a compressible construction having a wireless power source structured around a cylindrical-shaped support that suspends a motor within the vascular system while also supporting an impeller pump that can be made to be collapsible. The whole system allows for a minimally invasive pump implantation and augmentation of flow.

Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and / or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and / or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire / MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

Methods and apparatus for monitoring oxygen saturation levels in tissue are disclosed. According to one aspect of the present invention, a sensor arrangement for use in an optical imaging system includes a first source structure, a second source structure, and a detector arrangement. The first source structure provides a first beam of light and the second source structure provides a second beam of light. The detector arrangement includes detector structures that have centerpoints, and receives the first and second beams of light after the first and second beams of light are reflected off of an external surface. The detector arrangement is arranged to define a first axis that passes through the centerpoint of each detector structure, and a distance from a centerpoint of the first source structure to the first axis is not equal to a distance from a centerpoint of the second source structure to the first axis.

Techniques are provided for performing a copy operation. A fast reverse restore command indicating a new source and a new target is received, wherein the new source is an original target and the new target is an original source. A synchronous scan is performed on the new target. A new target structure associated with the new target is updated using a new source structure associated with the new source. Techniques are also provided for performing a copy operation in which a fast reverse restore command is received after an instant virtual copy has been performed from a new target to a new source and wherein the fast reverse restore command is performed before a background copy has been performed by the instant virtual copy.

A fuel control system and method for providing fuel to an internal combustion engine are provided. The fuel control system generally includes at least one valve device structured to deliver a fuel supply to the engine, a first fuel source structured to provide a primary fuel to the valve device, a second fuel source structured to provide an alternate fuel to the valve device, and an electronic controller structured to control the valve device. The electronic controller controls the valve device as a function of various data to selectively deliver the primary fuel and the alternate fuel to generate a fuel supply, e.g. as a mixture of the two fuels. The data used to control the fuel supply may include GPS data, engine data, environmental data, and / or other operational data.

This invention discloses bottom-source lateral diffusion MOS (BS-LDMOS) device. The device has a source region disposed laterally opposite a drain region near a top surface of a semiconductor substrate supporting a gate thereon between the source region and a drain region. The BS-LDMOS device further has a combined sinker-channel region disposed at a depth in the semiconductor substrate entirely below a body region disposed adjacent to the source region near the top surface wherein the combined sinker-channel region functioning as a buried source-body contact for electrically connecting the body region and the source region to a bottom of the substrate functioning as a source electrode. A drift region is disposed near the top surface under the gate and at a distance away from the source region and extending to and encompassing the drain region. The combined sinker-channel region extending below the drift region and the combined sinker-channel region that has a dopant-conductivity opposite to and compensating the drift region for reducing the source-drain capacitance.

The current invention provides a optical MEM device and system with an angled lid for hermetically sealing an active MEMS structure. The lid is sealed through an asymmetric seal formed with sealing rings having an asymmetric distribution of solder wetting surfaces which tilts the lid, when the lid and a substrate are soldered together. The asymmetric distribution wetting surfaces can be provided by forming one or more edge features, by patterning portions of the sealing rings or both. Preferably, the lid is transparent to one or more wavelengths of light in a range of 300 to 3000 Angstroms and hermetically seals a grating light valve structure having a plurality of movable ribbon for modulating light through the lid.

The invention relates to an energy storage system capacity configuration optimizing method capable of enhancing wind power receiving capacity. The method is characterized in that by constructing a relation between energy storage capacity and equivalent load peak-valley difference, calculating power grid wind power accepting capacity with limit of downward peak-adjustment capacity, calculating the improvement of wind power accepting capacity of an energy storage system, and optimizing the configuration of energy storage capacity under the premise that the energy storage system has the maximum total income, the problem that the access of large-scale wind power is limited due to restrictions of a network source structure and peak-adjusting capacity can be solved, and the influences of the energy storage cost and the large wind power receiving benefits on the capacity of the energy storage system can be fully considered, so that the capacity of the energy storage system is reasonably optimized, further the income maximization is realized.

Methods and apparatus for monitoring oxygen saturation levels in tissue are disclosed. According to one aspect of the present invention, a sensor arrangement for use in an optical imaging system includes a first source structure, a second source structure, and a detector arrangement. The first source structure provides a first beam of light and the second source structure provides a second beam of light. The detector arrangement includes detector structures that have centerpoints, and receives the first and second beams of light after the first and second beams of light are reflected off of an external surface. The detector arrangement is arranged to define a first axis that passes through the centerpoint of each detector structure, and a distance from a centerpoint of the first source structure to the first axis is not equal to a distance from a centerpoint of the second source structure to the first axis.

Techniques are provided for performing a copy operation. A fast reverse restore command indicating a new source and a new target is received, wherein the new source is an original target and the new target is an original source. A synchronous scan is performed on the new target. A new target structure associated with the new target is updated using a new source structure associated with the new source.Techniques are also provided for performing a copy operation in which a fast reverse restore command is received after an instant virtual copy has been performed from a new target to a new source and wherein the fast reverse restore command is performed before a background copy has been performed by the instant virtual copy.

Embodiments of source structure of a three-dimensional (3D) memory device and method for forming the source structure of the 3D memory device are disclosed. In an example, a NAND memory device includes a substrate, an alternating conductor / dielectric stack, a NAND string, a source conductor layer, and a source contact. The alternating conductor / dielectric stack includes a plurality of conductor / dielectric pairs above the substrate. The NAND string extends vertically through the alternating conductor / dielectric stack. The source conductor layer is above the alternating conductor / dielectric stack and is in contact with an end of the NAND string. The source contact includes an end in contact with the source conductor layer. The NAND string is electrically connected to the source contact by the source conductor layer. In some embodiments, the source conductor layer includes one or more conduction regions each including one or more of a metal, a metal alloy, and a metal silicide.

The present invention provides a versatile system for producing sense transistors having optimized thermal and parametric matching with an associated power transistor. A power transistor is formed, having a plurality of alternating source and drain structures, with a plurality of gate structures interposed there between. At a desired location within the power transistor—which may be in a central location, or symmetrically distributed—one or more sense transistors are formed from an isolated portion of either a drain or source structure.

A high efficiency LED chip is disclosed that comprises an active LED structure comprising an active layer between two oppositely doped layers. A first reflective layer can be provided adjacent to one of the oppositely doped layers, with the first layer comprising a material with a different index of refraction than the active LED structure. The difference in IR between the active LED structure and the first reflective layer increases TIR of light at the junction. In some embodiments the first reflective layer can comprise an IR lower than the semiconductor material, increasing the amount of light that can experience TIR. Some embodiments of LED chips according to the present invention can also comprise a second reflective layer or metal layer on and used in conjunction with the first reflective layer such that light passing through the first reflective layer can be reflected by the second reflective layer.

A semiconductor device includes a substrate and a source structure and a drain structure formed on the substrate. At least one nanowire structure interconnects the source structure and drain structure and serves as a channel therebetween. A gate structure is formed over said at least one nanowire structure to provide a control of a conductivity of carriers in the channel, and the nanowire structure includes a center core serving as a backbias electrode for the channel.

A LED lighting LCD back light source structure comprises a bracket in a box shape with a bottom connected to the radiation plate top with opening, inner side wall of the box and bottom being reflective side, a single color LED matrix in two dimensional arrangement on the bracket distributed on the inner bottom of the bracket, a expansion plate on the top of the single color LED matrix, an optical film combined of the prism film and the expansion film, with the optical film on the expansion plate and a fluorescent powder thin layer on the optical film set.

The invention discloses a large-size direct type LED backlight source and a preparation method. The backlight source structure comprises an edge emission type LED, a metal basal plate and a lower wall casing; the edge emission type LED comprises a conical half-reflecting semi-permeable mirror, an LED chip, packaging resin and an LED lamp holder; a plurality of light reflecting bowls are punched on the metal basal plate and are evenly distributed on the metal basal plate, the lower wall casing is in a frame-shaped structure and is arranged at the lower end of the metal basal plate, a hollow cavity is formed between the lower wall casing and the metal basal plate, the lower surface of the metal basal plate and the upper surface of the lower wall casing are provided with fine structures in the hollow cavity, fine structures at the lower ends of the light reflecting bowls are connected with the fine structure at the upper surface of the lower wall casing, and a liquid absorption core is formed; and support columns are arranged between the adjacent light reflecting bowls, have equal heights with the light reflecting bowls and are connected with the fine structure at the upper surface of the lower wall casing, and a liquid absorption core is formed. The invention provides an LED backlight source structure compromising the performance and the energy consumption under the precondition of low cost and realizing the lightness and the thinness of a large-size LED and a manufacturing process.

A non-volatile memory device includes channel structures that each extend in a first direction, wherein the channel structures each include channel layers and interlayer dielectric layers that are alternately stacked; source structure extending in a second direction crossing the first direction and connected to ends of the channel structures, wherein the source structure includes source lines and interlayer dielectric layers that are alternately stacked; and word lines extending in the second direction and formed to surround the channel structures.

The invention discloses a co-bus winding opening permanent magnet motor system with one side controllable and a zero sequence current suppression method of the co-bus winding opening permanent magnet motor system with one side controllable. The winding opening permanent magnet motor system is of a co-direct-current power source structure, the zero sequence current can be suppressed by designing a proportion resonant controller, a full-control converter and a non-control converter are adopted for the system, the capacity of the system is increased while cost is reduced, the system only relates to one direct-current power source which does not need to be isolated, only a control algorithm is modified for zero sequence current suppression, and the hardware cost of the system does not need to be increased. Meanwhile, according to the zero sequence current suppression method, a current loop structure is designed directly based on zero sequence current detection, and the method is easy to control and high in stability. Compared with a traditional structure, the complexity of the system is reduced, cost is reduced, the capacity of the system is increased, meanwhile, under the condition that no hardware is added, the problem that permanent magnet counter emf contains third harmonics is well solved, the control method is simple, and the anti-jamming capability is high.

The invention relates to a sending end power grid power source structure planning method considering local load peak regulation capacity. A power source structure planning model is established in combination with various actual constraint conditions such as peak regulation constraints on the basis of considering wind and light storage peak regulation capacity and local load peak regulation capacity. The method comprises the following steps: establishing a power source structure planning model considering local load peak regulation capacity; obtaining a unit maintenance plan, considering to addthe power and local load peak regulation capacity of an energy storage wind power plant and a solar power station, and carrying out random production simulation of wind, solar energy, water, fire andpumping storage power generation; and obtaining hybrid particle swarm optimization to solve the power source structure planning model, and thus obtaining an optimal power source structure planning scheme. Compared with the prior art, the method has the advantages that users and electric automobiles are considered to serve as local load to participate electric power system peak regulation actively, the difference between peak and valley of the system can be reduced effectively and the difficulty of electric power system peak regulation is relieved.

A three-dimensional semiconductor memory device includes a substrate, an electrode structure including gate electrodes sequentially stacked on the substrate, a source structure between the electrode structure and the substrate, vertical semiconductor patterns passing through the electrode structure and the source structure, a data storage pattern between each of the vertical semiconductor patterns and the electrode structure, and a common source pattern between the source structure and the substrate. The common source pattern has a lower resistivity than the source structure and is connected to the vertical semiconductor patterns through the source structure.

A self-aligned trench DMOS transistor structure of the present invention comprises a self-aligned source structure and a self-aligned trench gate structure, in which the self-aligned source structure comprises a p-base diffusion region, a self-aligned n+ source diffusion ring, a self-aligned p+ contact diffusion region, and a self-aligned source contact window; the self-aligned trench gate structure comprises a self-aligned silicided conductive gate structure, a self-aligned polycided conductive gate structure or a self-aligned polycided trenched conductive gate structure. The self-aligned trench DMOS transistor structure as described is fabricated by using only one masking photoresist step and can be easily scaled down to obtain a high-density trench DMOS power transistor with ultra low on-resistance, low gate-interconnection parasitic resistance, and high device ruggedness.

A lighting source structure has a base having at least one electrode coupled to a power source and a plurality of light sources, with each light source electrically coupled to the electrode to produce light when stimulated. The plurality of light sources are arranged on the base in a manner such that the light produced from the plurality of light sources is projected to form a lighted area that has a central focus point which is separate from the locations of each of the plurality of light sources.

The invention relates to a multiple-source vacuum coating device of a multiple-layer radiating type evaporator source distribution structure, and an operating mode of a substrate during the filming process. The system takes a medial axle of a filming vacuum chamber as a center, and effectively arranges more evaporator sources by adopting a two-layer or multiple-layer outward radiating evaporator source distribution method on the identical horizontal plane, to satisfy the requirements of the multiple-source in the multiple-layer part structure; simultaneously, the metal evaporator source is positioned at the position approximately vertical to a coating specimen stage, to remove the shadow effect generated during the metal costing process; the rotation of the substrate during the evaporating process, and the use of an independent small baffle plate and an masking plate of each sample in the sample base frame are matched, the uniform film manufacture of the larger-sized substrate not only can be realized, the preparation of a plurality of samples and a plurality of structures in the identical vacuum process but also can be realized, and the efficiency and the comparability of the result is improved; further, the multiple-layer distributing source structure can effectively utilize the space, the volume of the volume chamber body is greatly reduced under the condition of identical evaporating amount.

The invention discloses a backlight source structure and a display device. The backlight source structure comprises a back board, a rubber frame, an optical film material and a first light source, wherein the back board comprises a bottom plate and a side wall which is vertical to the bottom plate; the rubber frame is arranged on the side wall; the rubber frame comprises a plane support part which is used for supporting the optical film material; the first light source is located on the bottom plate and corresponds to the plane support part; a through hole is formed in the plane support part; light emitted from the first light source can be transmitted to the optical film material through the through hole. According to the backlight source structure, the edge shading phenomenon easily generated by a display panel is avoided; the effects of improving the effective display area of the display panel and the visual experience of a user are achieved.