257 results about "Nanowire array" patented technology

The invention relates to an optical fiber hydrogen sensor based on a silver film-nanowire hole array structure and a preparation method thereof in the field of photochemical sensors. The optical fiber hydrogen sensor comprises a multimode optical fiber, and a sensing area is formed on the multimode optical fiber; the sensing area is formed by stripping a coating layer with a preset length from the multimode optical fiber, thinning the optical fiber in the area, plating a silver film on the surface of the thinned optical fiber, and adsorbing a nanowire hole array structure which is sequentially and vertically arranged on the surface of the silver film in a liquid level self-assembly manner; the nanowire hole array is of a metal-medium-metal (MIM) structure, a gold-palladium nanowire array is arranged at the bottom, an intermediate medium layer is made of aluminum oxide, and a silver film with a hole array in any shape is arranged at the top. When light is transmitted to a sensing area from a fiber core of the multimode optical fiber, the light and a metal silver film can excite a surface plasmon resonance (SPR) effect, meanwhile, an MIM structure formed by a gold-palladium nanowire, an aluminum oxide dielectric layer and a porous silver film serves as an optical coupling antenna through a local surface plasmon resonance (LSPR) effect at the edge of a top hole, and the optical coupling antenna is used for transmitting the light to the sensing area. Light energy is efficiently converged and excited in an extremely bound gap plasmon (Gap Plasmon) in an aluminum oxide dielectric layer, so that far-unconventional electromagnetic field enhancement is generated in a sensing core area, and the sensitivity of the sensor is greatly improved.

The invention relates to the technical field of lithium secondary batteries, in particular to a negative electrode for a lithium secondary battery and the lithium secondary battery comprising the negative electrode, and the negative electrode comprises the following technical characteristics: a composite matrix structure: the negative electrode is composed of a multi-layer composite structure, and comprises (a) a conductive support layer, (b) a porous active material layer and (c) a surface functionalized coating. According to the invention, through the high porosity structure of the three-dimensional network metal matrix and the vertical conductive channel of the nanowire array, rapid transmission of lithium ions is realized, the interface resistance is reduced, and the rate capability is improved. And under a 10C high-rate condition, the capacity retention ratio of the negative electrode is still greater than or equal to 80%. The gradient pore structure design further optimizes a lithium ion diffusion path, and the diffusion rate of lithium ions is increased to # imgabs0 # by combining with a Poiseuille flow equation optimization parameter, so that polarization is effectively reduced, and the fast charging capacity of the electrode is improved.

The invention belongs to the field of nano biosensors, and discloses an in-situ preparation method of a silicon-gold-aptamer nanowire array for escherichia coli detection, which comprises the following steps: preparing a nanowire array material on a silicon wafer by using an in-situ synthesis method, loading gold nanoparticles and escherichia coli aptamers on the nanowire array in situ by using a chemical reduction method, and preparing the silicon-gold-aptamer nanowire array. A metal film is plated on the back surface of the silicon wafer, and the surface is connected with a circuit when the silicon wafer is used, so that an electric signal generated by the silicon-gold-aptamer nanowire array in a test is input into the circuit through conduction of the silicon wafer. The escherichia coli aptamer can specifically adsorb escherichia coli in a test solution to the surface of a material and generate current response linearly related to the concentration of a bacterial solution, and the sensor has good sensitivity due to the huge surface area of the in-situ synthesized electrode with the nano array structure. The high-performance nano biosensor provides a novel practical method for on-site rapid detection of food-borne pathogenic bacteria.

The invention discloses a deep ultraviolet LED epitaxial structure, a deep ultraviolet LED device comprising the same and a preparation method, and the epitaxial structure sequentially comprises a sapphire substrate, an AlN nanowire array layer, an AlN intrinsic layer and an AlGaN light-emitting structure layer from bottom to top. The AlGaN light-emitting structure layer further comprises an n-type AlGaN electron injection layer, a quantum well active layer, a p-type AlGaN electron blocking layer and other device structures. According to the invention, the vertically arranged AlN nanowire array is introduced to replace a traditional AlN buffer layer, so that lattice mismatching stress caused by a substrate is significantly released, and the dislocation density of an epitaxial layer is effectively reduced; meanwhile, the introduction of the AlN intrinsic layer further flattens the epitaxial interface and optimizes the lattice quality, thereby providing a high-quality template for the growth of a high-performance AlGaN material. The epitaxial structure is suitable for an LED device in a deep ultraviolet band, and the crystal quality, the electrical property and the luminous efficiency of the device can be improved.

The invention discloses a method for preparing a gallium nitride nanowire array by a flux method. The method comprises the following steps: providing a liquid phase system of an alloy catalytic material containing Ga and a transition metal element with a catalytic property, and a Ga-Na liquid phase alloy; under the condition of isolating water and oxygen, enabling the liquid phase system to be in contact with the gallium nitride single crystal substrate, under the atmosphere of high-pressure nitrogen, enabling the metal sodium to dissociate nitrogen at high temperature, and realizing c-direction growth of the gallium nitride nanowire array on the gallium nitride single crystal substrate under the catalytic action of the alloy catalytic material. The preparation of the raw materials only needs to be completed at one time, the substrate does not need to be specially treated, only gallium, sodium, nickel and nitrogen are used as the raw materials, and the cost is low; compared with a traditional sodium fluxing agent method for growing gallium nitride single crystals, the method has the advantages that a sodium-gallium-transition metal melt liquid-phase system with the catalytic property of the sodium fluxing agent is utilized, and the high-density gallium nitride nanowire is innovatively prepared.

The invention belongs to the technical field of photoelectric catalytic materials, and particularly relates to an experimental method for rapidly preparing a copper oxide nanowire and application of the copper oxide nanowire. The preparation method comprises the following steps: adopting a copper net as a substrate, rapidly preparing a Cu (OH) 2 nanowire array on the surface of the copper net through a constant-voltage anodic oxidation method, rapidly dehydrating Cu (OH) 2 through high-temperature heat treatment, and preparing the CuxO nanowire array in situ. Compared with the existing P-type semiconductor material, the material has a wider visible light absorption range as a photoelectric catalytic material, and has better performance in the fields of hydrogen production through photoelectric water decomposition and photo-assisted Li-CO2 batteries. The problem of low light energy utilization rate is solved, and the copper oxide nanowire material is beneficial to separation of photo-induced electrons and hole pairs, so that the charge-discharge voltage close to a theoretical value can be measured when the copper oxide nanowire material is used as the positive electrode material of the Li-CO2 battery.

The invention is suitable for the technical field of OER catalysts, and provides a preparation method of a nanowire array composed of a ferrocobalt-based heterostructure, and the preparation method comprises the following steps: pretreating a foamed nickel substrate; performing in-situ growth of a precursor CoFe-LDH nanosheet on the NF through a hydrothermal method; and synthesizing the nanowire array composed of the ferrocobalt-based heterostructure: putting a precursor into a muffle furnace, heating, keeping the temperature so that the precursor is thoroughly converted into a Co-Fe-O intermediate, immersing NF on which the intermediate grows into a polytetrafluoroethylene reaction kettle lining, carrying out a hydrothermal reaction, and naturally cooling to the room temperature to obtain a Co9S8-Fe3O4 / VNF composite material (the vulcanized NF is abbreviated as VNF), so that the nanowire array composed of the ferrocobalt-based heterostructure and the Co9S8-Fe3O4 / VNF composite material is obtained. The nanowire array is composed of a ferrocobalt-based heterostructure. The invention further provides a nanowire array composed of the ferrocobalt-based heterostructure and application of the nanowire array in preparation of a working electrode of an oxygen evolution reaction catalyst. According to the heterostructure catalyst provided by the invention, the adsorption strength of an OER intermediate can be optimized to realize high intrinsic OER activity, and efficient and stable water decomposition is realized.

The invention belongs to the technical field of photoelectric detection, and relates to a gallium oxide nanowire array type solar blind photoelectric detector and a preparation method thereof. Spreading liquid metal gallium on the surface of the substrate to form a liquid metal gallium layer on the surface of the substrate; performing vacuum evaporation on the surface of the liquid metal gallium layer to form a gold film layer to obtain a device precursor; and heating the device precursor to 400-1000 DEG C at a heating rate of 10-15 DEG C / min, and carrying out heat treatment for 1-2h to obtain the sandwich structure device. According to the method, the preparation mode of the array type gallium oxide nanowire is simplified, gallium metal left in the growth process is used as the electrode, the tedious and complex technological process needed in the previous device preparation process is improved, the ordered and regular gallium oxide nanowire array structure is prepared, and the photoelectric detection effect is improved.

The invention discloses a ligand-free electro-deposition method for growing a platinum nanowire array on a substrate. The longest length of the platinum nanowire array can reach about 10 microns. The method has a wide deposition potential interval of-0.5 V to-7 V, and the length of the platinum nanowire can be regulated and controlled on the substrate by adjusting the deposition time under the condition of no template and small molecule ligand; meanwhile, the density of the platinum nanowire can be controlled by changing the concentration of the silane coupling agent. In addition, the synthesis can be expanded to a conductive substrate, so that the platinum nanowire array can be directly used as a working electrode subsequently, and great application potential is provided for the fields of electro-catalysis and the like. The method is simple in process, mild in reaction condition and low in cost, and the nano material synthesized by the electro-deposition method has the advantages of being accurate and controllable, simple and convenient to operate and environment-friendly.

The invention discloses a carbon nanotube hollow fiber-based electrode and a preparation method and application thereof, the carbon nanotube hollow fiber-based electrode comprises a conductive substrate and an active material loaded on the conductive substrate, the conductive substrate is a carbon nanotube hollow fiber, the inner diameter of the carbon nanotube hollow fiber is 130-310 [mu] m, and the wall thickness of the carbon nanotube hollow fiber is 5-10 [mu] m. The carbon nanotube hollow fiber is used as a conductive substrate, and a stable conductive network structure is formed among the carbon nanotubes, so that the substrate has excellent conductivity, is beneficial to rapid transfer of charges between an electrode and an electrolyte, also has a high specific surface area, and provides more active sites for charge storage; the carbon nanotube hollow fiber is subjected to surface treatment, and oxygen-containing functional groups such as hydroxyl and carboxyl are introduced, so that hydroxide uniformly and orderly grows on the surface of the hollow fiber, a nanowire array structure is formed, a multi-channel diffusion path is provided, and ion diffusion is facilitated; and the prepared carbon nanotube hollow fiber-based electrode has high specific capacitance and excellent rate capability.

The invention relates to an electrochemical induced metal oriented growth method based on a gallium-based liquid metal substrate, and belongs to the technical field of electrochemical materials. According to the present invention, the dynamic smooth interface and the low lattice mismatch characteristic of the liquid metal are utilized, the reduction kinetics of the metal ions is regulated and controlled through the constant current mode, the high orientation degree growth of the crystal along the specific crystal face (such as Zn (002) and In (111)) is achieved, and the prepared deposited metal dominant crystal face has the high orientation degree. The problems of stress accumulation and dendritic crystals of a traditional solid substrate can be solved, and the method is suitable for green preparation of nanowire arrays and functional coatings; and the process is simple and convenient to operate, easy in control of process parameters and suitable for batch production.

The invention relates to the technical field of nano materials, and discloses a preparation method of a horizontal guiding CsPbBr3 nanowire array. The preparation method comprises the following steps: S1, blade-coating a mixture containing polydimethylsiloxane on a channel array template, heating, curing and stripping to obtain a polydimethylsiloxane film with a channel array; s2, cleaning a substrate and performing hydrophobic modification to obtain a hydrophobic substrate; s3, a CsPbBr3 solution is taken, a surfactant is added, and a mixed solution is obtained; and S4, dropwise adding the mixed solution to the surface of a hydrophobic substrate, covering a polydimethylsiloxane film with a channel array, compacting, heating, and stripping to obtain the horizontal guiding CsPbBr3 nanowire array. The preparation method of the horizontally oriented CsPbBr3 nanowire array provided by the invention is simple in steps, short in time consumption and high in efficiency, and the obtained CsPbBr3 nanowire array is tidy in horizontal arrangement, good in continuity and high in crystallization quality.

The invention relates to a three-dimensional CuO (at) Ni (OH) 2 (at) FeOOH multistage nanowire array electrode and a preparation method and application thereof, and belongs to the field of water electrolysis and new energy materials. The method comprises the following steps: firstly, placing foamy copper in a mixed solution of potassium hydroxide (sodium hydroxide) and ammonium persulfate for reaction to prepare a Cu (OH) 2 nanowire array electrode; secondly, calcining the electrode in a muffle furnace to obtain a CuO nanowire array electrode; and then, electrically depositing a Ni (OH) 2 nano layer and a FeOOH nano layer on the CuO nano wire in sequence to obtain the three-dimensional CuO (at) Ni (OH) 2 (at) FeOOH multi-stage nano wire array electrode. In the catalyst, the Ni (OH) 2 nano layer and the CuO nano wire are tightly combined and fully contacted, and the FeOOH and the Ni (OH) 2 nano layer are tightly combined and fully contacted, so that a unique three-layer cable structure is formed. The self-supporting electrode material prepared by the invention has excellent conductivity and electrocatalytic activity, and good structural stability. The method is simple in process and high in controllability, and has a non-negligible application prospect in the fields of water electrolysis and new energy.

A MEMS gas sensor and a preparation method therefor, comprising an insulating substrate (1), a heating electrode (403), an insulating layer (105) and a testing unit, which are overlappingly disposed. The testing unit comprises a testing electrode, a sensing unit (2), and a selective separation membrane (3); the sensing unit (2) has a nanowire array structure formed by multiple nanowires disposed at intervals, and the selective separation membrane (3) covers the surface of the sensing unit and a recessed portion; the nanowires comprise a first metal and a second metal, the first metal being Pd, and the second metal being at least one selected from Ni, Cu, Ag, Au and Ir; the selective separation membrane (3) comprises an inner separation membrane (301) and an outer separation membrane (302) which are stacked in sequence; the inner separation membrane (301) comprises polytetrafluoroethylene, and the outer separation membrane (302) is a mixed matrix membrane having a covalent organic framework material as a filler and a polymer of intrinsic microporosity as a matrix. The MEMS gas sensor possesses excellent sensitivity for low-concentration gas monitoring, and tolerance stability for high-concentration gas, as well as excellent anti-interference performance and response speed.

The invention discloses a defect layer modified TiO2 nanowire array photo-anode and a preparation method thereof, and belongs to the technical field of photoelectrochemistry. The Ti thin film is deposited on the surface of TiO2 NWAs growing on the substrate in a magnetron sputtering mode, then annealing treatment is conducted in the N2 atmosphere, Ti can capture O atoms in TiO2 crystal lattices in the annealing process, a TiO2 defect layer containing oxygen vacancies is formed on the surface, the lower Fermi energy level is helped to be obtained, the Fermi energy level tends to be balanced when the Ti thin film and a main body TiO2 nanowire form a homojunction, and therefore the TiO2 defect layer with the oxygen vacancies is formed. Therefore, a built-in electric field is generated, migration of photon-generated carriers is promoted, and the utilization rate of light is enhanced. The surface defect state concentration is regulated and controlled by further regulating and controlling conditions such as Ti film deposition time and annealing temperature, so that the prepared photo-anode has better PEC performance; the invention provides an effective means for regulating and controlling the photoelectrocatalytic performance of TiO2, and also provides a theoretical basis for related applications.

The invention relates to the technical field of adsorption type materials for extracting water from air, in particular to an MOF compound adsorbent based on foamy copper as well as a preparation method and application of the MOF compound adsorbent. Foamy copper which is smooth in surface, provided with communicating pore channels and excellent in heat transfer performance is selected as a substrate material, in-situ etching is conducted on the foamy copper in a strong alkali solution to grow a copper hydroxide nanowire array, then the copper hydroxide nanowire array and 2, 3, 6, 7, 10, 11-hexahydroxy triphenylene are used for converting copper hydroxide into interwoven and wound Cu3 (HHTP) 2 nanorods through a hydrothermal method, and the Cu3 (HHTP) 2 nanorods are prepared. The MOF foam composite adsorbent material with the three-dimensional porous structure based on the foamy copper is obtained. The Pi-Pi transition of 2, 3, 6, 7, 10, 11-hexahydroxy triphenylene as a ligand in Cu3 (HHTP) 2 can absorb ultraviolet light and visible light and further convert the ultraviolet light and visible light into heat energy, so that the material has excellent photo-thermal conversion capacity and relatively high heat conduction capacity and stability, and photo-thermal autonomous desorption can be realized under the irradiation of sunlight when adsorption is saturated.

The invention relates to a flexible sensing device based on a silicon nanowire array and a preparation method of the flexible sensing device, and belongs to the technical field of sensors. The preparation method comprises the following steps: S1, plating silver on the surface of a silicon wafer, and performing primary etching to form a silicon nanowire array; s2, performing primary ultrasonic induction and secondary etching on the silicon wafer after primary etching, and forming cracks at the bottom of the silicon nanowire array; s3, coating the top of the silicon nanowire array with a tackifier, then transferring the silicon nanowire array to the surface of the substrate under a heating condition, and performing stripping, curing and secondary ultrasonic induction; and S4, arranging a second electrode on the top of the silicon nanowire array after the secondary ultrasonic induction to obtain the flexible sensing device based on the silicon nanowire array. According to the preparation method disclosed by the invention, the flowering-shaped silicon nanowire array of which the bottom is gathered and the top is opened and tidy is constructed, and evaporation, friction, adsorption and desorption of tiny water drops can be carried out more quickly, so that faster response and better signal-to-noise ratio are obtained.

The invention belongs to the field of preparation of negative electrode materials, and particularly relates to a lithium ion battery silicon negative electrode with an optimized alloying array transition layer and a preparation method of the lithium ion battery silicon negative electrode. A potassium hydroxide solution is used as an electrolyte, a copper foil is placed on a constant voltage source to be subjected to anodic oxidation, a Cu (OH) 2 nanowire array with the surface evenly growing is obtained, annealing treatment of argon and hydrogen mixed gas is conducted before a silicon active substance is coated through magnetron sputtering, and the Cu nanowire is obtained through reduction. After the Si active material layer is coated by magnetron sputtering, the whole electrode is subjected to annealing treatment, so that a Cu3Si alloy is generated at the interface of Cu and Si, and the contact strength and the conductive efficiency of the Cu and the Si are enhanced. According to the invention, the problem that the silicon negative electrode is not firmly adhered to the current collector and is easy to fall off from the current collector to cause power loss in the battery circulation process under the condition of violent volume change is solved. The reaction specific surface area is increased through the three-dimensional nanowire array structure, and the performance of the silicon negative electrode under the large current density is enhanced through the transition layer of the copper-silicon alloy.

The invention relates to the technical field of field emission cathodes, in particular to an Au nanoparticle modified 4H-SiC nanowire field emission cathode and a preparation method thereof. The method comprises the following steps: (1) performing electrochemical etching on a 4H-SiC wafer, processing a bamboo-like 4H-SiC nanowire array on the surface of the 4H-SiC wafer, and stripping the 4H-SiC nanowire array from the 4H-SiC wafer; (2) carrying out magnetron sputtering on Au nanoparticles on the surface of the 4H-SiC nanowire array obtained in the step (1); and (3) annealing treatment is carried out on the 4H-SiC nanowire array with the Au nanoparticles, the annealing temperature is 200-400 DEG C, the heat preservation time is 50-70 min, and the Au nanoparticle modified 4H-SiC nanowire field emission cathode is obtained. The bamboo-like 4H-SiC nanowire attached with Au nanoparticles is annealed, and the obtained field emission cathode is low in turn-on electric field and high in electron emission stability.

This invention discloses an ocular implant and its delivery system, comprising: a flexible substrate; multiple nanowire arrays disposed on the flexible substrate; an elastic ring disposed along the circumferential edge of the flexible substrate, the elastic ring having elastic memory and capable of returning to its original shape before deformation after deformation; and two opposing openings disposed near the edge of the flexible substrate. The nanowire array of the ocular implant of this invention can be composed of multiple materials spliced ​​together, and materials with different efficacies and photosensitive wavelengths can be selected for splicing. Therefore, personalized ocular implants can be customized according to different patient conditions to achieve a better match with the patient's fundus condition. Furthermore, the folding and opening design of the ocular implant of this invention, as well as the self-expanding property of the elastic ring, enable it to be adapted to a delivery system for positioning and minimally invasive implantation.

This invention discloses a frustum-shaped flexible photoelectric energy conversion module, comprising an optical fiber connector, a housing, and a photovoltaic cell. The optical fiber connector is fixedly disposed on the top of the housing. A frustum-shaped cavity is formed within the housing, and the photovoltaic cell is fixed within the cavity. The photovoltaic cell is a three-dimensional flexible energy transfer chip comprising multiple sub-cells connected in series. Each sub-cell comprises multiple arrayed nanowires with a radial PIN structure. A wire interface is provided on the housing. The input end of the photovoltaic cell is connected to an external input device via the optical fiber connector, and the output end of the photovoltaic cell passes through the wire interface and is connected to a power-consuming device. In this invention, the use of a nanowire array structure for the sub-cells increases the specific surface area, expands the longitudinal absorption area, saves projected area, reduces volume, and improves heat dissipation. Simultaneously, the nanoarray structure can significantly improve the light-harvesting capability and charge separation efficiency of the cell.

The invention relates to a copper-cobalt bimetallic phosphide heterojunction and a preparation method and application thereof.The preparation method comprises the following steps that 1, pretreated foamy copper is soaked in an ammonium persulfate and sodium hydroxide solution, and the substance serves as a strong oxidant and is used for reacting to form copper hydroxide; (2) mixing cobalt nitrate hexahydrate with methanol, and putting copper hydroxide to react for two days; 3) adding dimethylimidazole for continuous reaction, and then washing, drying and phosphorizing at room temperature; compared with the prior art, the preparation method is simple in process and low in cost; the prepared catalyst has a heterojunction nanowire array structure, more active sites are provided, charge redistribution at a phosphide heterojunction interface is promoted by electron directional movement, the electron structure of the catalyst can be adjusted, and adsorption energy of reactants and intermediates on the active sites can be changed, so that reaction kinetics is promoted. The catalyst product is mainly ammonia gas, is good in stability and can be repeatedly used for multiple times.

A method for preparing an ordered cross-stacked metal oxide nanowire array is provided. The method includes the following steps: conducting synthesis by using an amphiphilic diblock copolymer as a structure directing agent, tetrahydrofuran (THF) as a solvent and polyoxometalates (POMs) as an inorganic precursor, where the diblock copolymer can interact with POMs via an electrostatic force to form a core-shell cylindrical micelle in the solvent, which self-assembles to form an ordered multilayer-crossed organic-inorganic composite nanostructure during an evaporation process; the template is removed by calcination in air, thereby obtaining ordered and crossed metal oxide nanowires with various elements doping. The nanowire array material has a high specific surface area, a high crystallinity, and realizes uniform doping of heteroatoms.

The present invention discloses an organic heterojunction nanowire array, a preparation method thereof, and an optoelectronic device. The preparation method includes: preparing a nanoscale channel array on the surface of a substrate, and then performing a hydrophobic treatment on the surface; by means of a first mask plate having a first through-hole array, preparing a metal phthalocyanine nanowire array on the surface by physical vapor deposition; and then by means of a second mask plate having a second through-hole array, preparing an aluminum tris(8-hydroxyquinoline) nanowire array on the surface by physical vapor deposition, wherein the second through-hole array is used to control the growth region of the aluminum tris(8-hydroxyquinoline) nanowire array, so that the aluminum tris(8-hydroxyquinoline) nanowire array overlaps with the metal phthalocyanine nanowire array, and an organic heterojunction nanowire array is prepared. This preparation method can achieve the directional growth and alignment of organic heterojunction nanowires, and further can achieve the in-situ large-scale construction and integration of nanowire device arrays.

The present invention relates to a method for preparing magnetic nickel tapered nanowires, comprising the following steps: (1) irradiating and sensitizing a polymer template with a latent track by a fast heavy ion beam; (2) sputtering a gold conductive layer on one side of the polymer template with the latent track, and then depositing a copper conductive layer on the surface of the gold conductive layer by electrochemical deposition; (3) etching the side of the polymer template with the latent track without the gold-copper conductive layer using an etching solution to obtain a polymer template with tapered linear channels; (4) electrochemically depositing magnetic nickel tapered nanowires on the side of the polymer template with the tapered linear channels without the gold-copper conductive layer; and (5) stripping the gold-copper conductive layer to obtain the magnetic nickel tapered nanowires. The present invention is simple and efficient, and for the first time achieves the controllable preparation of magnetic nickel tapered nanowire arrays, successfully preparing small-sized magnetic nickel tapered nanowire arrays with excellent microwave absorption performance.

The invention discloses a wafer room temperature bonding method and application thereof, and belongs to the technical field of semiconductor advanced packaging and three-dimensional integration. The method comprises the following steps: providing a first wafer, and sequentially preparing a metal plane layer and an oxide layer on the surface of one side of the first wafer to form a metal / oxide composite layer; selectively etching the metal / oxide composite layer to remove the oxide layer and form a metal nanowire array layer on the metal plane layer; providing a second wafer, and preparing a metal material layer on the surface of one side of the second wafer; and aligning the surface, with the metal nanowire array layer, of the first wafer with the surface, with the metal material layer, of the second wafer, and then bonding. According to the invention, the metal nanowire array is introduced into the bonding interface, so that the nanowires are subjected to plastic deformation and local surface diffusion under the action of external pressure, that is, compact and reliable metal-metal bonding can be realized in a room temperature environment, and the requirements of a low-temperature process window and high strength are both considered.

The invention belongs to the technical field of photo-assisted hydroelectric power generation, and particularly relates to a photo-assisted hydroelectric power generation device based on ferroelectric polarization tantalum nitride and a preparation method of the photo-assisted hydroelectric power generation device. The device comprises visible-light-responsive tantalum nitride and a ferroelectric material ultrathin layer on the surface of the visible-light-responsive tantalum nitride, wherein the ultrathin layer is subjected to annealing and polarization reversal treatment. The preparation method comprises the following steps: preparing a tantalum oxide nanowire array and a tantalum oxide nanotube array; preparing visible light response tantalum nitride; and preparing a ferroelectric material, dispensing the ferroelectric material on a substrate of the visible-light-responsive tantalum nitride nano material to form an ultrathin layer, and performing polarization reversal treatment after annealing. According to the ferroelectric polarization tantalum nitride-based water photovoltaic power generation device, the tantalum nitride material with the one-dimensional nano structure provides excellent photoelectric, evaporation power generation and directional rapid water vapor transmission performance, and the top and the polarizable ferroelectric polymer form a unique asymmetric heterojunction structure; through a polarization electric field generated by an ordered dipole in the ferroelectric material, stable and adjustable electric output is realized.

This invention discloses a method for preparing Co-P3 / S-TiO2 nanowire array materials, along with their products and applications. Through a hydrothermal-etching-phosphating method, Co single atoms coordinated with P were successfully anchored on the surface of a TiO2 nanowire array rich in step defects, resulting in the Co-P3 / S-TiO2 nanowire array material. Under the dual regulation of the special step structure and the suitable electronegativity of P, the Co metal atom becomes an electron-rich center, exhibiting superior adsorption capacity and a unique coordination environment, thus possessing excellent electrocatalytic hydrogen evolution performance. The preparation process is simple, and the raw materials are inexpensive. This invention provides inspiration for the design and synthesis of single-atom catalysts and their application in the field of electrocatalytic water electrolysis.

The invention provides a nano array for exposing a SnO2 high-activity crystal face, a preparation method of the nano array and application of the nano array in hydrogen sensing. The preparation method of the Pd-SnO2 nanowire array comprises the following steps: (1) synthesizing a SnO2 nano array on the surface of a substrate; and (2) loading the Pd nano particles on the SnO2 nano array, so as to obtain the Pd-SnO2 nanowire array. The palladium nanoparticle-loaded SnO2 nanowire array can rapidly and sensitively detect hydrogen under a low-temperature condition, has excellent sensitivity, shows excellent selectivity and reliable stability, has a detection lower limit reaching a ppm level, and is high in response speed and good in reproducibility. When the palladium nanoparticle loaded SnO2 nanowire array is used for preparing a hydrogen sensing device, the energy consumption is reduced, and the hydrogen sensing device is safer and more environment-friendly.

The invention relates to the technical field of detectors, in particular to a graded silicon nanowire metasurface, a manufacturing method thereof and a silicon-based photoelectric detector, and the silicon-based photoelectric detector comprises the graded silicon nanowire metasurface. The graded silicon nanowire metasurface comprises a silicon substrate, one side of the silicon substrate comprises a side top surface and at least one stage of groove surface generated by etching along the side top surface, and the etching depths of any stage of groove surface are different; and the graded silicon nanowire is integrally formed on one side of the silicon substrate and comprises a silicon nanowire array which is formed at least depending on the groove surface. The narrow-band selective absorption / emission device has the advantages of realizing narrow-band selective absorption / emission, keeping high hotspot density, low cost, easiness in batch processing and the like, and has the potential effect of realizing high-dimensional detection requirements.