237 results about "Silicon nanowires" patented technology

The invention relates to the technical field of high polymer materials, and particularly provides a self-repairing type UV curing alumite color layer coating and a preparation method thereof. The water-based ink is prepared from, by weight, 30-50 parts of polyurethane acrylic resin, 10-25 parts of modified acrylic oligomer containing dynamic covalent bonds, 2-5 parts of photoinitiator, 3-8 parts of hydrophobic modified nano filler and 1-3 parts of cross-linking agent, and the dynamic covalent bonds are selected from at least one of hydrazide bonds, boric acid ester bonds and Diels-Alder bonds. By introducing a gradient energy collaborative network of dynamic covalent bonds and quadruple hydrogen bonds, rapid self-repairing of the coating at normal temperature and thermal triggering recombination of deep damage are achieved, and meanwhile through the micro-phase separation design of the hydrophobic core-shell filler and the graft modified silicon carbide nanowires, the hydrolysis resistance is improved.

The invention discloses a silicon carbon material, a preparation method thereof and a lithium ion battery. The preparation method of the silicon-carbon material comprises the following steps: S1, adding an alkaline reagent into a mixed solution containing a porous carbon-loaded silicon substrate, transition metal salt and a solvent, and drying to obtain a first precursor; s2, performing carbon deposition on the first precursor by adopting a chemical vapor deposition method, performing in-situ growth of a carbon nanotube, and then performing acid pickling and drying to obtain a second precursor; s3, performing silicon deposition on the second precursor by adopting a chemical vapor deposition method, and forming silicon nanoparticles and / or silicon nanowires in the carbon nanotubes in situ to obtain a third precursor; and S4, carrying out carbon coating on the third precursor to obtain the silicon carbon material. The silicon-carbon material is excellent in expansion inhibition performance and compressive strength and has excellent conductivity, and the lithium ion battery containing the silicon-carbon material can give consideration to excellent capacity performance, rate performance and cycle performance.

The invention relates to the technical field of self-thermal-insulation mortar, in particular to self-thermal-insulation mortar and a preparation method thereof. Comprising the following components: Portland cement, a gradient graphene aerogel skeleton, metal organic framework nanoparticles, photo-thermal-phase change coupling microcapsules, magnetic field orientation Fe3O4 nanosheets, self-repairing microcapsules, silicon carbide nanowire aerogel, a water reducing agent and a fiber reinforced material. The gradient graphene aerogel skeleton, the photo-thermal-phase change coupling microcapsules and other materials with excellent thermal insulation performance are introduced, and a multi-layer thermal insulation structure is constructed. The gradient graphene aerogel skeleton has extremely low heat conductivity coefficient and high porosity, and can effectively prevent heat transfer; the photo-thermal-phase change coupling microcapsules can absorb and release a large amount of heat in the phase change process, and the heat preservation effect of the mortar is further improved.

The invention relates to the field of coatings, and discloses a wear-resistant and corrosion-resistant high-entropy alloy composite coating and a preparation method thereof.The wear-resistant and corrosion-resistant high-entropy alloy composite coating is prepared by depositing functional high-entropy alloy composite powder on the surface of a base body in a laser cladding mode, the functional high-entropy alloy composite powder comprises high-entropy alloy powder, a modified additive and composite ceramic powder, the modified additive is prepared by using urea and titanium tetrachloride as raw materials, growing nano titanium nitride particles on the surface of a silicon carbide nanowire in situ to prepare a nano titanium nitride / silicon carbide nanowire composite material, and then coating a layer of nano titanium dioxide particles on the surface of the nano titanium nitride / silicon carbide nanowire composite material by using tetrabutyl titanate; and the composite ceramic powder is prepared by compounding zirconium carbide, niobium carbide, hafnium carbide and tantalum disilicide. The hardness, wear resistance and corrosion resistance of the high-entropy alloy coating are enhanced by adding the modified additive and the composite ceramic powder.

The invention discloses a silicon-carbon composite negative electrode material prepared by using ALD and CVD technologies, a preparation method and a lithium battery. The preparation method comprises the following steps: growing a first metal oxide on the surface of a carbon substrate material by using an ALD atomic layer deposition method; reducing the first metal oxide on the surface of the carbon substrate material into nanodots containing metal elements in the reaction cavity; heating the carbon substrate material distributed with the nano-dots in a reaction furnace, injecting a gas mixture which comprises silane and inert gas, and growing silicon nanowires on the nano-dots based on a silane CVD (Chemical Vapor Deposition) cracking process; and heating the carbon substrate material on which the silicon nanowire grows in a reaction furnace, injecting hydrocarbon gas, and coating the surface of the silicon nanowire with a carbon layer based on a CVD cracking process to obtain the silicon-carbon composite negative electrode material, so that the method for preparing the silicon-carbon composite negative electrode material can effectively prevent the volume expansion of the silicon nanowire in the charging and discharging process, and the service life of the silicon-carbon composite negative electrode material is prolonged. And the cycle performance of the silicon-carbon composite negative electrode material is improved.

The invention provides a method for preparing a zirconium boride ceramic material through pressureless sintering, and belongs to the technical field of zirconium boride ceramics. The method comprises the steps of preparing zirconium boride composite powder, modifying silicon carbide nanowires and mixing and sintering. The method for modifying the silicon carbide nanowire comprises the steps of acid treatment and modification, the modification step comprises the following steps: adding aluminum isopropoxide into absolute ethyl alcohol, adding a nitric acid solution, stirring for 1.5-2.0 hours at the temperature of 60-63 DEG C, adding the acid-treated silicon carbide nanowire, carrying out ultrasonic dispersion and water bath evaporation, then drying, putting into a muffle furnace, and carrying out heat preservation for 2.0-2.2 hours at the temperature of 490-500 DEG C to obtain a modified silicon carbide nanowire; the ceramic material prepared by adopting the method disclosed by the invention is high in density, good in mechanical property and excellent in high-temperature oxidation resistance and stability in a complex environment.

The invention belongs to the technical field of chemical fertilizer preparation, and discloses an efficient water-soluble fertilizer based on polyglutamic acid and a preparation method thereof.The efficient water-soluble fertilizer comprises the following raw materials: polyglutamic acid which is prepared through a microbial fermentation method, has the molecular weight range of 500-1500 kDa and the purity of more than or equal to 95% and serves as a core water and fertilizer retention and nutrient slow release carrier; the high-quality fulvic acid is derived from weathered coal or biochemical extraction, the content of the fulvic acid is greater than or equal to 50%, and the fulvic acid is used for promoting root development and nutrient absorption; the humic acid takes young lignite as a raw material, the content of the humic acid is greater than or equal to 70%, and the humic acid is used for improving the granular structure and microbial activity of soil; the calcium element is added in the form of soluble calcium salt such as calcium nitrate and calcium amino acid chelate, the calcium content is larger than or equal to 10%, and the calcium element is used for enhancing the stability and stress resistance of cell walls of crops in terms of CaO; and the acid-base equilibrium stress-resistant factor comprises a silicon nanowire. The invention provides an efficient water-soluble fertilizer based on polyglutamic acid and a preparation method of the efficient water-soluble fertilizer. The water-soluble fertilizer has higher fertilizer utilization rate, better crop growth promoting effect and stronger stress resistance.

The invention belongs to the technical field of nano material preparation, and particularly relates to a silicon nitride nanowire and a preparation method thereof. Comprising the following steps: (1) mixing vinyl polysilazane and acrylic acid 2-isocyano ethyl ester, and carrying out stirring reaction under a vacuum condition to obtain A-PSZ; (2) the A-PSZ is put into a vacuum drying oven to be subjected to thermocuring treatment, and cured A-PSZ is obtained; (3) putting the cured A-PSZ into a tubular furnace, and introducing N2 to carry out pyrolytic reaction; and (4) taking out the sample after the pyrolytic reaction, collecting a product generated on the surface of the sample, and sequentially carrying out acid washing and alkali washing treatment to finally obtain the silicon nitride nanowire. According to the method, acrylate modified polysilazane is taken as a raw material, precursor pyrolysis and carbon thermal reduction are combined, the prepared silicon nitride nanowire is high in purity and uniform in morphology, meanwhile, a catalyst and a toxic and harmful nitrogen source do not need to be used in the preparation process, and the method is environmentally friendly and suitable for large-scale industrial production.

The invention relates to the technical field of microelectronic manufacturing. The invention discloses a double-layer V-shaped nanowire structure which comprises a base layer arranged on a substrate and further comprises an upper-layer nanowire and a lower-layer nanowire which spatially grow on the base layer in a staggered mode, the upper-layer nanowire and the lower-layer nanowire are broken line type nanowires, and horizontal projections of break points of the broken line type nanowires and horizontal projections of break points of the broken line type nanowires and the lower-layer nanowire coincide and are located on the same plumb line. And the broken line type nanowire on the upper layer is broken at the break point to form a gap. According to the invention, two spatially staggered nanowires are grown by using single IPSLS, the lower layer continuous silicon nanowire is used as a conductive channel, and the upper layer gap nanowire is used as an adjustable depletion gate, so that the preparation process flow of the double-layer V-shaped nanowire structure is greatly simplified, and multiple quantum islands can be integrated to construct a compact quantum bit chain.

The invention discloses a solid-state battery negative electrode material and a preparation method and application thereof, and relates to the technical field of solid-state batteries. The preparation method comprises the following steps: uniformly mixing silicon nanowires, silicon nanoparticles, a carbon nanofiber precursor material and a solvent, preparing a negative electrode material precursor by adopting electrostatic spinning, and carrying out pre-oxidation treatment and carbonization treatment to prepare the solid-state battery negative electrode material, wherein the mass ratio of the silicon nanowires to the silicon nanoparticles is 1: (0.1-4). According to the invention, the silicon nanowires and the silicon nanoparticles are cooperated, and the carbon nanofibers are used as a carrier to form a three-dimensional network structure, so that the diffusion path, anisotropic stress distribution and crushing resistance of Li can be shortened, the cycle performance is improved, and the carbon nanofibers not only improve the mechanical stability of Si in the cycle process, but also provide good conductivity for the electrode. The problems of volume change and low conductivity of the silicon negative electrode material in the use process are effectively solved, and the interface stability of the silicon negative electrode material and a solid electrolyte material is enhanced.

The present invention belongs to the technical field of composite silicon-based negative electrode materials and discloses a composite silicon-based negative electrode material, a preparation method, and a solid-state battery. The composite silicon-based negative electrode material comprises a graphite substrate and silicon carbide nanowires and nanosilicon particles attached to the surface of the graphite substrate. The silicon carbide nanowires are interwoven to form a network structure, and the nanosilicon particles are dispersed in the network structure. The nanosilicon particles are dispersed in the network of interwoven silicon carbide nanowires, presenting a porous structure similar to that of reinforced concrete. The porous structure provides space for volume expansion, mitigating damage to the electrode structure caused by volume expansion during lithium insertion and extraction of the silicon-based negative electrode. At the same time, the one-dimensional silicon carbide therein, due to its high mechanical strength, can mitigate damage to the electrode structure caused by long-term cycling of the silicon negative electrode, thereby improving the mechanical properties of the silicon negative electrode and thus improving the cycling performance of the silicon electrode.

This invention discloses a silicon-carbon composite anode material, its preparation method, and a lithium battery prepared using ALD and CVD technologies. The method includes: growing a first metal oxide on the surface of a carbon substrate using ALD atomic layer deposition; reducing the first metal oxide on the surface of the carbon substrate to metal-containing nanodots in a reaction chamber; heating the carbon substrate with the nanodots in a reactor and injecting a gas mixture containing silane and an inert gas; growing silicon nanowires on the nanodots using a silane CVD pyrolysis process; heating the carbon substrate with the grown silicon nanowires in a reactor and injecting hydrocarbon gas; and coating the surface of the silicon nanowires with a carbon layer using a CVD pyrolysis process to obtain the silicon-carbon composite anode material. This method effectively prevents the volume expansion of silicon nanowires during charge and discharge, improving the cycle performance of the silicon-carbon composite anode material.

The invention relates to a flexible sensing device based on a silicon nanowire array and a preparation method of the flexible sensing device, and belongs to the technical field of sensors. The preparation method comprises the following steps: S1, plating silver on the surface of a silicon wafer, and performing primary etching to form a silicon nanowire array; s2, performing primary ultrasonic induction and secondary etching on the silicon wafer after primary etching, and forming cracks at the bottom of the silicon nanowire array; s3, coating the top of the silicon nanowire array with a tackifier, then transferring the silicon nanowire array to the surface of the substrate under a heating condition, and performing stripping, curing and secondary ultrasonic induction; and S4, arranging a second electrode on the top of the silicon nanowire array after the secondary ultrasonic induction to obtain the flexible sensing device based on the silicon nanowire array. According to the preparation method disclosed by the invention, the flowering-shaped silicon nanowire array of which the bottom is gathered and the top is opened and tidy is constructed, and evaporation, friction, adsorption and desorption of tiny water drops can be carried out more quickly, so that faster response and better signal-to-noise ratio are obtained.

The invention provides a preparation method of an anti-sputtering high-density graphite material for an ion implanter, and relates to the technical field of graphite material preparation, and the preparation method comprises the following steps: mixing and modifying a reinforcing phase, matrix graphite powder and a silane coupling agent to obtain composite powder; the reinforcing phase is a compound system of silicon carbide nanowires and boron-doped diamond micro-powder; mixing the composite powder with a coal pitch binder, and molding by adopting a stepped low-speed curing process to obtain a carbon blank; the silicon carbide nanowires and the boron-doped diamond micro-powder are compounded to form a reinforcing phase and cooperate with the superfine crystalline flake graphite matrix to achieve performance complementation, the silicon carbide nanowires form a three-dimensional network supporting structure to hinder crack growth, and the boron-doped diamond micro-powder improves the surface abrasion resistance and reduces the sputtering yield; the silane coupling agent is matched to modify and reinforce interface bonding, so that the problems of performance limitation and interface stripping of a traditional single reinforced phase are solved, and the comprehensive anti-sputtering and anti-erosion performance of the material is remarkably improved.

A silicon-carbon composite material, and a preparation method therefor and a use thereof. The silicon-carbon composite material comprises a silicon-carbon composite particle; and the silicon-carbon composite particle comprises a carbon matrix and carbon nanotubes distributed in the carbon matrix, the tubes of the carbon nanotubes containing silicon nanowires.

The invention relates to the technical field of high-performance pipe preparation, in particular to a heat-resistant Krah pipe and a preparation method thereof. The ultrahigh-density polyethylene composite material is prepared from ultrahigh-density polyethylene, polyaryletherketone, boron nitride-silicon carbide nanowire-graphene three-dimensional network filler, a maleic anhydride grafted ethylene-octene copolymer, organic montmorillonite, silane coupling agent modified carbon fibers, a composite antioxidant and a lubricant. The three-dimensional network filler is prepared by carrying out hydroxylation on graphene, modifying with a silane coupling agent, and reacting with aminated boron nitride nanosheets and silicon carbide nanowires under the action of a cross-linking agent; the modified carbon fiber is obtained by ultrasonic treatment of a silane coupling agent solution and high-temperature drying. Through the innovative formula and process, the heat deformation temperature of the Krah pipe exceeds 280 DEG C, the ring stiffness reaches 18 kN / m or above, the elongation at break reaches 300% or above, and the chemical resistance is improved; the gradient cooling process controls the longitudinal shrinkage rate to be smaller than 1%, the production cost is reduced, and the advantages of high temperature resistance, extrusion resistance, long service life and economical efficiency are achieved.

Methods for producing nanostructures from copper-based catalysts on porous substrates, particularly silicon nanowires on carbon-based substrates for use as battery active materials, are provided. Related compositions are also described. In addition, novel methods for production of copper-based catalyst particles are provided. Methods for producing nanostructures from catalyst particles that comprise a gold shell and a core that does not include gold are also provided.

The invention discloses a vertical silicon nanowire-based full-gate-around photovoltaic field effect transistor and a preparation method thereof, the photovoltaic field effect transistor takes a vertical silicon nanowire as a channel, transforms a transverse width into a longitudinal depth, is easier to realize physical isolation of a single device in a large-scale array, and improves the reliability of the whole-gate-around photovoltaic field effect transistor. And meanwhile, the integration level of the photovoltaic field effect transistor is greatly improved. The silicon nanowires penetrate through the two-dimensional material film, and the two-dimensional material film wraps the silicon nanowires in a full surrounding mode according to the atomic layer thickness to form a ring gate structure. The ring gate structure depends on the excellent mechanical flexibility of the two-dimensional material and the nanoscale lossless modification of the spherical probe of the atomic force microscope. By means of an atomic force microscope ball probe interface processing technology, the invention provides a novel method for preparing a transistor with a sub-nanometer size grid electrode, and the photovoltaic transistor structure not only effectively inhibits the short channel effect, but also remarkably improves the efficient integration capability of a two-dimensional material and a silicon-based CMOS (Complementary Metal-Oxide-Semiconductor Transistor) device.

This invention relates to the field of polymer materials technology, specifically proposing a self-healing UV-curable electroplated aluminum color coating and its preparation method. By weight, it comprises: 30-50 parts polyurethane acrylic resin, 10-25 parts modified acrylic oligomer containing dynamic covalent bonds, 2-5 parts photoinitiator, 3-8 parts hydrophobically modified nanofiller, and 1-3 parts crosslinking agent. The dynamic covalent bonds are selected from at least one of hydrazide bonds, borate ester bonds, and Diels-Alder bonds. This invention achieves rapid self-healing and thermally triggered remodeling of the coating at room temperature through the introduction of a gradient energy synergistic network of dynamic covalent bonds and quadruple hydrogen bonds. Simultaneously, the microphase separation design of the hydrophobic core-shell filler and grafted modified silicon carbide nanowires enhances hydrolysis resistance.

The application discloses a kind of carbonaceous material with coating and its preparation method, material is made by following method: (1) form microstructure groove on the surface of matrix, and prepare metal catalyst layer;(2) using silicon-containing slurry is impregnated to matrix;(3) carbonaceous material matrix is heated to grow and form silicon carbide nanowire connecting layer, obtain intermediate product A;(4) on intermediate product A deposition form silicon carbide nanowire reinforced silicon carbide layer, obtain intermediate product B;(5) on intermediate product B deposition preparation silicon carbide-zirconium carbide composite layer, post-processing obtains intermediate product C;(6) on intermediate product C deposition preparation zirconium carbide layer.The application avoids the problem of single coating in prior art, ensures the transition and bonding strength between coating and matrix, promotes coating and matrix to present three-dimensional interpenetration mechanical cooperation structure, effectively improves the interface bonding strength of coating and matrix by mechanical connection and interface constraint.

The application discloses a method for preparing amorphous silicon nanowire material by mixing silicon waste materials with metal salt and application thereof, and belongs to the technical field of lithium ion batteries. The amorphous silicon nanowire material is prepared by using photovoltaic silicon waste materials as raw materials, metal salt as a catalyst, and the two being mixed and attached on a carbon base, and then being in-situ grown into the amorphous silicon nanowire material on the base after being liquefied by Joule heat shock. The prepared amorphous silicon nanowire material is directly used as a negative electrode of a lithium ion battery, and has excellent first coulomb efficiency and cycle stability. The scheme of the application provides a new method for short-range and rapid, green and efficient preparation of the amorphous silicon nanowire material, provides a new idea for high-value utilization of photovoltaic silicon cutting waste materials, and is easy to realize industrialization.

A thin film transistor, a manufacturing method thereof, a display substrate, and a display device are provided. The thin film transistor includes: a substrate, an active layer, a gate, a source and a drain. The active layer is arranged on the substrate and formed as a grid, including silicon nanowires extending along a first direction, the active layer includes source and drain regions oppositely arranged along the first direction, and a channel region located therebetween. The gate is arranged on the substrate, and an orthographic projection of the gate onto the substrate overlaps with orthographic projections for silicon nanowires in the channel region onto the substrate. The source and drain are arranged on the substrate, the source contacts silicon nanowires in the source region, and the drain contacts silicon nanowires in the drain region.

Silicon photonic crystal (10; 10′; 10″) comprising periodic silicon structures (12) contiguous with voids (14), and a silicon resonant cavity (16) consisting of silicon nanowires (18) entirely made of silicon with uniform doping, said nanowires acting as active medium of the photonic crystal.

The present invention relates to a micro-nano structure sensitive to a laser beam in a specific direction, including a substrate, wherein an insulating layer is fixedly disposed on the substrate, the insulating layer is provided with two silicon nanowires parallel to each other and having the same shape and size, lead-out nanowires are arranged at both ends of each of the silicon nanowires and are connected with a potentiometer, and a near-field coupling effect occurs between the silicon nanowires and the substrate when laser light irradiates the silicon nanowires, and one silicon nanowire closer to a laser light source is completely suppressed and the other silicon nanowire farther away from the laser light source maintains brightness. The present invention enables precise detection of a laser signal at a specific angle and non-contact signal transmission in a specific direction. The present invention relates to a micro nano structure sensitive to a laser beam in a specific direction. The micro nano structure comprises a substrate, wherein an insulating layer is fixedly arranged on the substrate; and two silicon wires, which are parallel to each other and are in the same shape and size, are arranged on the insulating layer, and wires are led out from two ends of each silicon wire and are connected to potential meters. When laser light irradiates the silicon wires, a near field coupling effect is generated between the silicon wires and the substrate; and one silicon wire close to a laser light source is completely inhibited, and the other silicon wire far away from the laser light source maintains the brightness thereof. By means of present invention, a laser signal at a certain specific angle can be accurately detected, and non contact signal transmission can be carried out in a specific direction.

The invention relates to the technical field of graphene aerogel, in particular to a preparation method of graphene oxide and silicon carbide nanowire composite aerogel, and aims to solve the problems of high required reaction temperature and harsh reaction conditions when a chemical vapor deposition method and an in-situ synthesis method are used for preparing the graphene oxide and silicon carbide nanowire composite aerogel. The invention provides a preparation method of graphene oxide and silicon carbide nanowire composite aerogel. The preparation method comprises the following steps: (1) dispersing graphene oxide into water to prepare a graphene oxide aqueous solution; (2) adding the silicon carbide nanowire treated by NaOH into the graphene oxide aqueous solution to obtain a graphene oxide silicon carbide nanowire mixed solution; (3) adding citric acid into the mixed solution to obtain a graphene oxide silicon carbide nanowire mixed reaction solution; (4) carrying out hydrothermal reaction on the mixed reaction liquid to obtain GO / SiC nanowire hydrogel; and (5) carrying out freeze drying on the GO / SiC nanowire hydrogel to obtain the GO / SiC nanowire aerogel.

The invention provides a biochar-loaded silicon nanowire composite material and a preparation method and application thereof.The preparation method comprises the steps that a chemical activation method and a physical activation method are combined, the surface and the interior of a biomass material are etched layer by layer, and multiple layers of biomass porous carbon materials with different pore diameters are formed; the problem that etching is not thorough or excessive when a single activating agent is used for preparing biomass porous carbon is effectively solved; the prepared multi-layer porous carbon is large in specific surface area and high in void ratio, metal catalyst particles with different sizes can be planted and loaded in the multi-layer porous carbon, and a grading effect on a large-particle catalyst is achieved; silicon nanowires grow in the load body in an oriented mode through catalytic growth, the spatial network structure of the multi-layer porous carbon can effectively bear volume expansion of the silicon nanowires, and repeated growth of the SEI film is restrained.

The invention relates to the technical field of polyethylene films, and particularly discloses a low-precipitation polyethylene film and a preparation method thereof. The low-precipitation polyethylene film is prepared from the following raw materials: polyethylene, silicon carbide nanowires, nano talcum powder, an antioxidant and glyceryl stearate. The alkane precipitation amount of the obtained polyethylene film is 5 ppm or below, and precipitation of alkane molecules of the polyethylene film is obviously reduced.

The application belongs to the technical field of lithium batteries, and relates to a preparation method and application of a carbon-coated silicon nanowire negative material. The preparation method comprises the following steps: adding micro-sized silicon powder, an iridium source and a solvent into a container, uniformly dispersing, then removing the solvent through oil bath heating and stirring, and further drying; ball milling the obtained mixture, and passing the ball-milled mixture through a 100-300 mesh screen; performing CVD coating on the screened powder, introducing a gaseous carbon source, coating for 1-3 hours at 850-1050 DEG C, passing the coated powder through a 200-450 mesh screen, and obtaining the carbon-coated silicon nanowire negative material. The low-cost raw materials such as the iridium source and the micro-sized silicon are efficiently converted into the silicon nanowire composite negative material, the cost is reduced and the process is simplified, and the silicon nanowire composite negative material is applied to a battery, so that the battery performance can be effectively improved.

The method comprises the steps that a raw material 1 and a raw material 2 are simultaneously conveyed to a reaction kettle through two charging machines and pipelines of the two charging machines and inert gas, the raw material 1 is pure silicon powder, the raw material 2 is pure silicon powder and pure nickel powder which account for half of the raw material 1 and are evenly mixed, the feeding speed of the raw material 1 is 1-3 Kg / h, the feeding speed of the raw material 2 is 1-3 Kg / h, and the feeding speed of the raw material 2 is 1-3 Kg / h; the feeding speed of the raw material 2 is 0.2-1Kg / h, and the feeding speed of the raw material 1 is 3-10 times of the feeding speed of the raw material 2 all the time; the raw material 1 enters a plasma arc core area under the conveying of inert gas, the raw material 1 is evaporated to form silicon steam, and the inert gas forms high-temperature carrier gas; conveying the raw material 2 into a tail area outside the plasma arc core area under the conveying of inert gas, and heating and melting to form silicon-nickel alloy liquid drops; and forming a silicon nanowire containing a silicon-nickel alloy in the silicon nanowire forming region. The method is simple in preparation process, safe, environmentally friendly, relatively low in equipment cost, high in controllability of technological parameters and capable of achieving large-scale production.

The invention provides a gene sequencing method based on a silicon nanowire / graphene single-molecule device, and belongs to the technical field of single-molecule gene sequencing. Two materials of a one-dimensional silicon nano material and a molecular heterojunction are used as electrical detection elements, source and drain currents are output, and a single functional DNA polymerase is used as an element grid synchronously, so that the single-molecule gene sequencing is realized. Preparing a single DNA polymerase modified single molecule field effect transistor device; a bionic liquid phase test module is designed and constructed by utilizing a micro-nano processing and microfluidic technology, polymerase test conditions are optimized, real-time sequencing of non-amplification genes is realized, and the purposes of single-base resolution, high fidelity and low-cost gene sequencing can be achieved.