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181 results about "Silicon nanowires" patented technology

Silicon nanowires, also referred to as SiNWs, are a type of semiconductor nanowire most often formed from a silicon precursor by etching of a solid or through catalyzed growth from a vapor or liquid phase. Such nanowires have promising applications in lithium ion batteries, thermoelectrics and sensors.Initial synthesis of SiNWs is often accompanied by thermal oxidation steps to yield ...

Wear-resistant and corrosion-resistant high-entropy alloy composite coating and preparation method thereof

The invention relates to the field of coatings, and discloses a wear-resistant and corrosion-resistant high-entropy alloy composite coating and a preparation method thereof.The wear-resistant and corrosion-resistant high-entropy alloy composite coating is prepared by depositing functional high-entropy alloy composite powder on the surface of a base body in a laser cladding mode, the functional high-entropy alloy composite powder comprises high-entropy alloy powder, a modified additive and composite ceramic powder, the modified additive is prepared by using urea and titanium tetrachloride as raw materials, growing nano titanium nitride particles on the surface of a silicon carbide nanowire in situ to prepare a nano titanium nitride / silicon carbide nanowire composite material, and then coating a layer of nano titanium dioxide particles on the surface of the nano titanium nitride / silicon carbide nanowire composite material by using tetrabutyl titanate; and the composite ceramic powder is prepared by compounding zirconium carbide, niobium carbide, hafnium carbide and tantalum disilicide. The hardness, wear resistance and corrosion resistance of the high-entropy alloy coating are enhanced by adding the modified additive and the composite ceramic powder.
Owner:JIANGXI HANHONG SURFACE TECH CO LTD

Method for preparing zirconium boride ceramic material through pressureless sintering

ActiveCN121591506ABorideModified carbon
The invention provides a method for preparing a zirconium boride ceramic material through pressureless sintering, and belongs to the technical field of zirconium boride ceramics. The method comprises the steps of preparing zirconium boride composite powder, modifying silicon carbide nanowires and mixing and sintering. The method for modifying the silicon carbide nanowire comprises the steps of acid treatment and modification, the modification step comprises the following steps: adding aluminum isopropoxide into absolute ethyl alcohol, adding a nitric acid solution, stirring for 1.5-2.0 hours at the temperature of 60-63 DEG C, adding the acid-treated silicon carbide nanowire, carrying out ultrasonic dispersion and water bath evaporation, then drying, putting into a muffle furnace, and carrying out heat preservation for 2.0-2.2 hours at the temperature of 490-500 DEG C to obtain a modified silicon carbide nanowire; the ceramic material prepared by adopting the method disclosed by the invention is high in density, good in mechanical property and excellent in high-temperature oxidation resistance and stability in a complex environment.
Owner:SHANDONG RES & DESIGN ACADEMY OF IND CERAMICS

Double-layer V-shaped nanowire structure, double-gate nanowire single electronic device and preparation method of double-layer V-shaped nanowire structure

The invention relates to the technical field of microelectronic manufacturing. The invention discloses a double-layer V-shaped nanowire structure which comprises a base layer arranged on a substrate and further comprises an upper-layer nanowire and a lower-layer nanowire which spatially grow on the base layer in a staggered mode, the upper-layer nanowire and the lower-layer nanowire are broken line type nanowires, and horizontal projections of break points of the broken line type nanowires and horizontal projections of break points of the broken line type nanowires and the lower-layer nanowire coincide and are located on the same plumb line. And the broken line type nanowire on the upper layer is broken at the break point to form a gap. According to the invention, two spatially staggered nanowires are grown by using single IPSLS, the lower layer continuous silicon nanowire is used as a conductive channel, and the upper layer gap nanowire is used as an adjustable depletion gate, so that the preparation process flow of the double-layer V-shaped nanowire structure is greatly simplified, and multiple quantum islands can be integrated to construct a compact quantum bit chain.
Owner:NANJING UNIV

Solid-state battery negative electrode material and preparation method and application thereof

The invention discloses a solid-state battery negative electrode material and a preparation method and application thereof, and relates to the technical field of solid-state batteries. The preparation method comprises the following steps: uniformly mixing silicon nanowires, silicon nanoparticles, a carbon nanofiber precursor material and a solvent, preparing a negative electrode material precursor by adopting electrostatic spinning, and carrying out pre-oxidation treatment and carbonization treatment to prepare the solid-state battery negative electrode material, wherein the mass ratio of the silicon nanowires to the silicon nanoparticles is 1: (0.1-4). According to the invention, the silicon nanowires and the silicon nanoparticles are cooperated, and the carbon nanofibers are used as a carrier to form a three-dimensional network structure, so that the diffusion path, anisotropic stress distribution and crushing resistance of Li can be shortened, the cycle performance is improved, and the carbon nanofibers not only improve the mechanical stability of Si in the cycle process, but also provide good conductivity for the electrode. The problems of volume change and low conductivity of the silicon negative electrode material in the use process are effectively solved, and the interface stability of the silicon negative electrode material and a solid electrolyte material is enhanced.
Owner:CHINA FAW CO LTD

Composite silicon-based negative electrode material, preparation method and solid-state battery

The present invention belongs to the technical field of composite silicon-based negative electrode materials and discloses a composite silicon-based negative electrode material, a preparation method, and a solid-state battery. The composite silicon-based negative electrode material comprises a graphite substrate and silicon carbide nanowires and nanosilicon particles attached to the surface of the graphite substrate. The silicon carbide nanowires are interwoven to form a network structure, and the nanosilicon particles are dispersed in the network structure. The nanosilicon particles are dispersed in the network of interwoven silicon carbide nanowires, presenting a porous structure similar to that of reinforced concrete. The porous structure provides space for volume expansion, mitigating damage to the electrode structure caused by volume expansion during lithium insertion and extraction of the silicon-based negative electrode. At the same time, the one-dimensional silicon carbide therein, due to its high mechanical strength, can mitigate damage to the electrode structure caused by long-term cycling of the silicon negative electrode, thereby improving the mechanical properties of the silicon negative electrode and thus improving the cycling performance of the silicon electrode.
Owner:安徽得壹能源科技有限公司 +1

A silicon-carbon composite anode material prepared using ALD and CVD technologies, its preparation method, and a lithium battery.

This invention discloses a silicon-carbon composite anode material, its preparation method, and a lithium battery prepared using ALD and CVD technologies. The method includes: growing a first metal oxide on the surface of a carbon substrate using ALD atomic layer deposition; reducing the first metal oxide on the surface of the carbon substrate to metal-containing nanodots in a reaction chamber; heating the carbon substrate with the nanodots in a reactor and injecting a gas mixture containing silane and an inert gas; growing silicon nanowires on the nanodots using a silane CVD pyrolysis process; heating the carbon substrate with the grown silicon nanowires in a reactor and injecting hydrocarbon gas; and coating the surface of the silicon nanowires with a carbon layer using a CVD pyrolysis process to obtain the silicon-carbon composite anode material. This method effectively prevents the volume expansion of silicon nanowires during charge and discharge, improving the cycle performance of the silicon-carbon composite anode material.
Owner:BATTFLEX (WUHAN) TECH CO LTD

Preparation method of anti-sputtering high-density graphite material for ion implanter

The invention provides a preparation method of an anti-sputtering high-density graphite material for an ion implanter, and relates to the technical field of graphite material preparation, and the preparation method comprises the following steps: mixing and modifying a reinforcing phase, matrix graphite powder and a silane coupling agent to obtain composite powder; the reinforcing phase is a compound system of silicon carbide nanowires and boron-doped diamond micro-powder; mixing the composite powder with a coal pitch binder, and molding by adopting a stepped low-speed curing process to obtain a carbon blank; the silicon carbide nanowires and the boron-doped diamond micro-powder are compounded to form a reinforcing phase and cooperate with the superfine crystalline flake graphite matrix to achieve performance complementation, the silicon carbide nanowires form a three-dimensional network supporting structure to hinder crack growth, and the boron-doped diamond micro-powder improves the surface abrasion resistance and reduces the sputtering yield; the silane coupling agent is matched to modify and reinforce interface bonding, so that the problems of performance limitation and interface stripping of a traditional single reinforced phase are solved, and the comprehensive anti-sputtering and anti-erosion performance of the material is remarkably improved.
Owner:JINGHANG NEW MATERIALS (SUZHOU) CO LTD

Silicon-carbon composite material, and preparation method therefor and use thereof

A silicon-carbon composite material, and a preparation method therefor and a use thereof. The silicon-carbon composite material comprises a silicon-carbon composite particle; and the silicon-carbon composite particle comprises a carbon matrix and carbon nanotubes distributed in the carbon matrix, the tubes of the carbon nanotubes containing silicon nanowires.
Owner:BYD CO LTD

Heat-resistant Krah pipe and preparation method thereof

InactiveCN120623608AFiberPolymer science
The invention relates to the technical field of high-performance pipe preparation, in particular to a heat-resistant Krah pipe and a preparation method thereof. The ultrahigh-density polyethylene composite material is prepared from ultrahigh-density polyethylene, polyaryletherketone, boron nitride-silicon carbide nanowire-graphene three-dimensional network filler, a maleic anhydride grafted ethylene-octene copolymer, organic montmorillonite, silane coupling agent modified carbon fibers, a composite antioxidant and a lubricant. The three-dimensional network filler is prepared by carrying out hydroxylation on graphene, modifying with a silane coupling agent, and reacting with aminated boron nitride nanosheets and silicon carbide nanowires under the action of a cross-linking agent; the modified carbon fiber is obtained by ultrasonic treatment of a silane coupling agent solution and high-temperature drying. Through the innovative formula and process, the heat deformation temperature of the Krah pipe exceeds 280 DEG C, the ring stiffness reaches 18 kN / m or above, the elongation at break reaches 300% or above, and the chemical resistance is improved; the gradient cooling process controls the longitudinal shrinkage rate to be smaller than 1%, the production cost is reduced, and the advantages of high temperature resistance, extrusion resistance, long service life and economical efficiency are achieved.
Owner:ANHUI HUIJU PIPELINE TECH CO LTD

Nanostructured battery active materials and methods of producing same

Methods for producing nanostructures from copper-based catalysts on porous substrates, particularly silicon nanowires on carbon-based substrates for use as battery active materials, are provided. Related compositions are also described. In addition, novel methods for production of copper-based catalyst particles are provided. Methods for producing nanostructures from catalyst particles that comprise a gold shell and a core that does not include gold are also provided.
Owner:ONED MATERIAL INC

A self-healing UV-curable electroplated aluminum color coating and its preparation method

This invention relates to the field of polymer materials technology, specifically proposing a self-healing UV-curable electroplated aluminum color coating and its preparation method. By weight, it comprises: 30-50 parts polyurethane acrylic resin, 10-25 parts modified acrylic oligomer containing dynamic covalent bonds, 2-5 parts photoinitiator, 3-8 parts hydrophobically modified nanofiller, and 1-3 parts crosslinking agent. The dynamic covalent bonds are selected from at least one of hydrazide bonds, borate ester bonds, and Diels-Alder bonds. This invention achieves rapid self-healing and thermally triggered remodeling of the coating at room temperature through the introduction of a gradient energy synergistic network of dynamic covalent bonds and quadruple hydrogen bonds. Simultaneously, the microphase separation design of the hydrophobic core-shell filler and grafted modified silicon carbide nanowires enhances hydrolysis resistance.
Owner:YANGZHOU XIANGHUA NEW MATERIAL TECH CO LTD

A carbonaceous material with a coating and a method for producing the same

The application discloses a kind of carbonaceous material with coating and its preparation method, material is made by following method: (1) form microstructure groove on the surface of matrix, and prepare metal catalyst layer;(2) using silicon-containing slurry is impregnated to matrix;(3) carbonaceous material matrix is heated to grow and form silicon carbide nanowire connecting layer, obtain intermediate product A;(4) on intermediate product A deposition form silicon carbide nanowire reinforced silicon carbide layer, obtain intermediate product B;(5) on intermediate product B deposition preparation silicon carbide-zirconium carbide composite layer, post-processing obtains intermediate product C;(6) on intermediate product C deposition preparation zirconium carbide layer.The application avoids the problem of single coating in prior art, ensures the transition and bonding strength between coating and matrix, promotes coating and matrix to present three-dimensional interpenetration mechanical cooperation structure, effectively improves the interface bonding strength of coating and matrix by mechanical connection and interface constraint.
Owner:HUNAN TITAN FUTURE TECH CO LTD

Method for preparing amorphous silicon nanowire material by using mixed silicon waste with metal salt and application thereof

The application discloses a method for preparing amorphous silicon nanowire material by mixing silicon waste materials with metal salt and application thereof, and belongs to the technical field of lithium ion batteries. The amorphous silicon nanowire material is prepared by using photovoltaic silicon waste materials as raw materials, metal salt as a catalyst, and the two being mixed and attached on a carbon base, and then being in-situ grown into the amorphous silicon nanowire material on the base after being liquefied by Joule heat shock. The prepared amorphous silicon nanowire material is directly used as a negative electrode of a lithium ion battery, and has excellent first coulomb efficiency and cycle stability. The scheme of the application provides a new method for short-range and rapid, green and efficient preparation of the amorphous silicon nanowire material, provides a new idea for high-value utilization of photovoltaic silicon cutting waste materials, and is easy to realize industrialization.
Owner:KUNMING UNIV OF SCI & TECH

Silicon photonic crystal

Silicon photonic crystal (10; 10′; 10″) comprising periodic silicon structures (12) contiguous with voids (14), and a silicon resonant cavity (16) consisting of silicon nanowires (18) entirely made of silicon with uniform doping, said nanowires acting as active medium of the photonic crystal.
Owner:CONSIGLIO NAT DELLE RICERCHE

Micro-nano structure sensitive to laser beam in specific direction

The present invention relates to a micro-nano structure sensitive to a laser beam in a specific direction, including a substrate, wherein an insulating layer is fixedly disposed on the substrate, the insulating layer is provided with two silicon nanowires parallel to each other and having the same shape and size, lead-out nanowires are arranged at both ends of each of the silicon nanowires and are connected with a potentiometer, and a near-field coupling effect occurs between the silicon nanowires and the substrate when laser light irradiates the silicon nanowires, and one silicon nanowire closer to a laser light source is completely suppressed and the other silicon nanowire farther away from the laser light source maintains brightness. The present invention enables precise detection of a laser signal at a specific angle and non-contact signal transmission in a specific direction. The present invention relates to a micro nano structure sensitive to a laser beam in a specific direction. The micro nano structure comprises a substrate, wherein an insulating layer is fixedly arranged on the substrate; and two silicon wires, which are parallel to each other and are in the same shape and size, are arranged on the insulating layer, and wires are led out from two ends of each silicon wire and are connected to potential meters. When laser light irradiates the silicon wires, a near field coupling effect is generated between the silicon wires and the substrate; and one silicon wire close to a laser light source is completely inhibited, and the other silicon wire far away from the laser light source maintains the brightness thereof. By means of present invention, a laser signal at a certain specific angle can be accurately detected, and non contact signal transmission can be carried out in a specific direction.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

Biochar-loaded silicon nanowire composite material as well as preparation method and application thereof

The invention provides a biochar-loaded silicon nanowire composite material and a preparation method and application thereof.The preparation method comprises the steps that a chemical activation method and a physical activation method are combined, the surface and the interior of a biomass material are etched layer by layer, and multiple layers of biomass porous carbon materials with different pore diameters are formed; the problem that etching is not thorough or excessive when a single activating agent is used for preparing biomass porous carbon is effectively solved; the prepared multi-layer porous carbon is large in specific surface area and high in void ratio, metal catalyst particles with different sizes can be planted and loaded in the multi-layer porous carbon, and a grading effect on a large-particle catalyst is achieved; silicon nanowires grow in the load body in an oriented mode through catalytic growth, the spatial network structure of the multi-layer porous carbon can effectively bear volume expansion of the silicon nanowires, and repeated growth of the SEI film is restrained.
Owner:TOMI CHENGDU APPLIED TECH RES INST CO LTD

Low-precipitation polyethylene film and preparation method thereof

The invention relates to the technical field of polyethylene films, and particularly discloses a low-precipitation polyethylene film and a preparation method thereof. The low-precipitation polyethylene film is prepared from the following raw materials: polyethylene, silicon carbide nanowires, nano talcum powder, an antioxidant and glyceryl stearate. The alkane precipitation amount of the obtained polyethylene film is 5 ppm or below, and precipitation of alkane molecules of the polyethylene film is obviously reduced.
Owner:SHIJIAZHUANG ZHONGHUI LEECHDOM PACKING CO LTD

Preparation method and application of carbon-coated silicon nanowire negative electrode material

The application belongs to the technical field of lithium batteries, and relates to a preparation method and application of a carbon-coated silicon nanowire negative material. The preparation method comprises the following steps: adding micro-sized silicon powder, an iridium source and a solvent into a container, uniformly dispersing, then removing the solvent through oil bath heating and stirring, and further drying; ball milling the obtained mixture, and passing the ball-milled mixture through a 100-300 mesh screen; performing CVD coating on the screened powder, introducing a gaseous carbon source, coating for 1-3 hours at 850-1050 DEG C, passing the coated powder through a 200-450 mesh screen, and obtaining the carbon-coated silicon nanowire negative material. The low-cost raw materials such as the iridium source and the micro-sized silicon are efficiently converted into the silicon nanowire composite negative material, the cost is reduced and the process is simplified, and the silicon nanowire composite negative material is applied to a battery, so that the battery performance can be effectively improved.
Owner:NINGBO GUANGKE NEW MATERIALS CO LTD

Preparation method of silicon nanowire and silicon nanowire

The method comprises the steps that a raw material 1 and a raw material 2 are simultaneously conveyed to a reaction kettle through two charging machines and pipelines of the two charging machines and inert gas, the raw material 1 is pure silicon powder, the raw material 2 is pure silicon powder and pure nickel powder which account for half of the raw material 1 and are evenly mixed, the feeding speed of the raw material 1 is 1-3 Kg / h, the feeding speed of the raw material 2 is 1-3 Kg / h, and the feeding speed of the raw material 2 is 1-3 Kg / h; the feeding speed of the raw material 2 is 0.2-1Kg / h, and the feeding speed of the raw material 1 is 3-10 times of the feeding speed of the raw material 2 all the time; the raw material 1 enters a plasma arc core area under the conveying of inert gas, the raw material 1 is evaporated to form silicon steam, and the inert gas forms high-temperature carrier gas; conveying the raw material 2 into a tail area outside the plasma arc core area under the conveying of inert gas, and heating and melting to form silicon-nickel alloy liquid drops; and forming a silicon nanowire containing a silicon-nickel alloy in the silicon nanowire forming region. The method is simple in preparation process, safe, environmentally friendly, relatively low in equipment cost, high in controllability of technological parameters and capable of achieving large-scale production.
Owner:NINGBO GUANGXIN NANOMATERIALS CO LTD +2

Hierarchical silicon nanowire metasurface, manufacturing method thereof and silicon-based photoelectric detector

The invention relates to the technical field of detectors, in particular to a graded silicon nanowire metasurface, a manufacturing method thereof and a silicon-based photoelectric detector, and the silicon-based photoelectric detector comprises the graded silicon nanowire metasurface. The graded silicon nanowire metasurface comprises a silicon substrate, one side of the silicon substrate comprises a side top surface and at least one stage of groove surface generated by etching along the side top surface, and the etching depths of any stage of groove surface are different; and the graded silicon nanowire is integrally formed on one side of the silicon substrate and comprises a silicon nanowire array which is formed at least depending on the groove surface. The narrow-band selective absorption / emission device has the advantages of realizing narrow-band selective absorption / emission, keeping high hotspot density, low cost, easiness in batch processing and the like, and has the potential effect of realizing high-dimensional detection requirements.
Owner:HUBEI JIUFENGSHAN LAB +1

Hollow nano silicon-carbon composite material, preparation method thereof and lithium ion battery

The invention provides a hollow nano silicon-carbon composite material, a preparation method thereof and a lithium ion battery, and belongs to the technical field of lithium ion batteries. According to the preparation method disclosed by the embodiment of the invention, the hollow nano silicon-carbon composite material is prepared by adopting a sacrificial template method, the surface of a silicon nanowire is coated with a template layer through the step S1, then the template layer is coated with a high-molecular polymer through the step S2, and then the high-molecular polymer is subjected to high-temperature carbonization through the step S3 to obtain a carbon coating layer, so that the hollow nano silicon-carbon composite material is obtained. And after the template layer is etched through the step S4, a gap layer is formed between the silicon nanowire and the carbon coating layer, and the hollow nano silicon-carbon composite material can be obtained. The gap layer can provide a space for volume expansion of the silicon nanowires, and the carbon coating layer can improve the conductivity of the composite material, so that the purpose of improving the cycle performance and the conductivity of the battery is achieved.
Owner:TOMI CHENGDU APPLIED TECH RES INST CO LTD

A continuous silicon nanowire negative electrode material based on ALD seed layer induced mesoporous confinement and a preparation method thereof

This invention discloses a continuous silicon nanowire anode material based on ALD seed layer-induced mesoporous confinement and its preparation method. The material comprises a mesoporous carbon framework with interconnected pore structures, and a one-dimensional silicon nanostructure located within the pores and extending continuously along the axial direction. The one-dimensional silicon nanostructure is connected to the inner wall of the mesoporous carbon through an interface modification layer, forming a continuous electron / ion transport pathway. The interface modification layer is formed by in-situ transformation of a metal oxide seed layer deposited on the inner wall of the pores under a silicon source gas and a reducing atmosphere, and its composition includes elemental metals, metal-silicon alloy phases, or metal silicides. Utilizing the spatial confinement effect of the mesoporous carbon, the radial expansion of the silicon nanostructure is restricted within the pores, reducing mechanical compression on the solid electrolyte; simultaneously, during the delithiation shrinkage process, the axial connectivity of the silicon nanostructure is maintained, alleviating solid-solid interface contact degradation, thereby improving the cycle stability and rate performance of the all-solid-state battery.
Owner:BATTFLEX (WUHAN) TECH CO LTD

A method for manufacturing a silicon nanowire

The application relates to a silicon nanowire manufacturing method and belongs to the technical field of MEMS. The steps comprise the following: S1, providing an SOI substrate; S2, forming a mask layer on the SOI substrate; S3, patterning the mask layer to form an etching window; S4, performing isotropic etching on the SOI substrate through the etching window to form a cavity and a silicon nanocolumn; S5, oxidizing the silicon nanocolumn to form an oxide layer and a silicon nanowire; and S6, removing the buried oxygen layer and the oxide layer to obtain a suspended silicon nanowire. The application solves the problems of the prior art, such as complex preparation method of the silicon nanowire, high requirement for equipment and poor batch consistency.
Owner:SHANDONG UNIV SHENZHEN RES INST

Silicon nanowire array double heterojunction self-driven photodetector and preparation method

The present invention discloses a self-driven double-heterojunction photodetector based on a silicon nanowire array and its preparation method. From top to bottom, the structure consists of a PEDOT:PSS top electrode (treated with ethylene glycol), a PbSe quantum dot film layer, a ZnO bulk material film layer, a silicon nanowire array layer, and a silicon bottom electrode. The ethylene glycol-treated PEDOT:PSS significantly enhances its conductivity, making it a transparent electrode for the device and reducing incident light loss. The PbSe / ZnO and ZnO / Si-NWA double heterojunctions broaden the device's spectral response range and accelerate the separation of photogenerated excitons. The silicon nanowire array structure reduces incident light reflection. Furthermore, the introduction of the ZnO film significantly reduces dark current compared to the previous simple Si-NW / PbSe structure. This structure can effectively improve the detection performance of silicon-based photodetectors.
Owner:BEIJING INST OF TECH

Chip, preparation method thereof and quantitative detection method of acyl carnitine

The invention provides a preparation method of a chip for quantitative detection of acyl carnitine in a high-coverage and high-sensitivity clinical sample. The preparation method comprises the following steps: A) preparing a silicon nanowire material; b) performing in-situ reduction modification on the gold nanoparticles by the silicon nanowire material to obtain an Au-SiNWs material; and C) carrying out a self-assembly reaction to prepare the Sulfo-Au-SiNWs material. According to the method, the ionization efficiency is enhanced through the synergistic effect of the introduced surface sulfonic acid groups and the gold nanoparticles, and the signal response of AC in a high-salt complex matrix is effectively improved. In the aspect of quantification, the innovatively designed full-spectrum internal standard method for perdeuterated ethanol derivatization avoids peak overlapping by utilizing isotope quality difference, breaks through the traditional quantification mode depending on a few standard substances, realizes high-coverage and high-accuracy quantitative analysis on AC in a clinical sample for the first time, and remarkably improves the universality and clinical operability of the method.
Owner:ZHEJIANG UNIV +2

Silicon nanowire / lead sulfide / graphene composite structure photoelectric detector and preparation method thereof

The invention discloses a photoelectric detector with a silicon nanowire / lead sulfide / graphene composite structure. The photoelectric detector comprises an indium gallium electrode, a silicon substrate, a silicon oxide layer, a silicon nanowire, a lead sulfide submicron crystal and a graphene / PMMA layer which are sequentially arranged from bottom to top, the solar cell further comprises a gold electrode arranged on the surface of the silicon oxide layer, and the other face of the gold electrode is in contact connection with the graphene / PMMA layer. According to the photoelectric detector, the lead sulfide crystal film is grown on the surface of the silicon nanowire in situ through an electrochemical deposition method, and a silicon / lead sulfide structure with good interface contact and synergistic effect is constructed; meanwhile, rapid separation and transportation of carriers are realized by utilizing high carrier mobility of the silicon nanowires and heterojunction energy band engineering, and dark current and response speed are effectively reduced. Finally, a suspended graphene top electrode structure design is introduced, effective collection of signals is realized by using the advantages of high light transmittance (97.7%) and mechanical flexibility of graphene, and efficient transmission of photon-generated carriers at an interface is ensured.
Owner:CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACAD OF SCI +1

Heating type gas sensor and preparation method thereof

The invention relates to a heating type gas sensor and a preparation method thereof.The heating type gas sensor comprises a silicon-on-insulator wafer, and the silicon-on-insulator wafer comprises a silicon-based substrate, a buried oxide layer and a semiconductor layer which are stacked from bottom to top, the semiconductor layer is etched to form a plurality of silicon nanowire channels which are spaced from one another and grooves located between the adjacent silicon nanowire channels. The upper surface of the buried oxide layer is etched to form a cavity located below the silicon nanowire channel, and the cavity is communicated with the groove. A plurality of heating elements which are arranged at intervals are arranged in the cavity, and the heating elements are positioned between the silicon nanowire channel and the buried oxide layer. The heating uniformity of the heating type gas sensor can be improved, and the heating power consumption can be reduced.
Owner:ZHEJIANG ROCKERSTONE ELECTRONICS TECH CO LTD

A silicon carbide nanowire supported nickel-based catalyst, a preparation method thereof and application thereof in ammonia decomposition reaction

This invention relates to a nickel-based catalyst supported on silicon carbide nanowires, its preparation method, and its application in ammonia decomposition, belonging to the field of hydrogen production and catalytic materials technology. The supported nickel-based nanowire silicon carbide catalyst of this invention uses a silicon carbide nanowire support as a substrate, on which nickel active metal nanoparticles are loaded and doped with rare earth metal additives. The active metal and rare earth metal additives are loaded onto the support via a deposition-precipitation method. The core of this invention lies in constructing a metal-support synergistic low-temperature ammonia decomposition catalyst that facilitates the dispersion of metal nanoparticles and current conduction by loading active metals and rare earth metal additives onto silicon carbide nanowires with high specific surface area and one-dimensional conductivity. By applying an external electric field, the current promotes the reaction process, accelerates low-temperature ammonia decomposition, significantly enhances ammonia decomposition activity, and ultimately enables the catalyst to exhibit high activity and high stability in ammonia decomposition for hydrogen production at lower temperatures. This is an ammonia decomposition hydrogen production technology solution that combines the advantages of low temperature, high stability, economy, and industrial applicability.
Owner:HENAN UNIVERSITY

Silicon-carbon negative electrode material and preparation method and application thereof

The invention belongs to the technical field of lithium ion battery materials, and relates to a silicon-carbon negative electrode material and a preparation method and application thereof. The silicon-carbon negative electrode material comprises a double-wire winding network structure formed by carbon nanotubes and silicon nanowires, the structure of the silicon nanowires has the characteristics of axial stress adaptability and long-range conductive path, and nano silicon is directionally arranged along a one-dimensional direction to form the nanowires, so that the expansion stress of the nanowires in the X direction can be mutually counteracted; therefore, the overall volume expansion is reduced; in the Y direction, the collapsing effect caused by the expansion effect enables the contact among silicon particles to be tighter, and the phenomenon of dead lithium caused by electron conduction interruption is avoided, so that the cycling stability of the silicon-carbon negative electrode is improved, and even if a part of regions are broken, the residual nanowires can still maintain electron transmission. And meanwhile, the characteristic of high specific surface area is beneficial to electrolyte permeation, and the lithium ion diffusion rate is improved.
Owner:NINGBO GUANGKE NEW MATERIALS CO LTD

Silicon-carbon composite material and anode comprising the same

The present disclosure relates to a silicon-carbon composite material, comprising: a porous carbon scaffold comprising micropores and mesopores and a total pore volume of more than 0.5 cm3 / g; a silicon content in the range of ≥30 wt.-% to ≤75 wt.-%, relating to the silicon-carbon composite material; nanoparticles comprising at least one of the elements Cu, Fe or Ni, wherein the nanoparticles are positioned on the surface of the silicon-comprising carbon scaffold, and nanowires, selected from silicon nanowires and carbon nanowires; wherein the nanowires are grown on the nanoparticles, and wherein a first surface coating is provided which is at least partially applied on a first surface area of silicon-carbon composite material, the surface coating comprising at least one of the elements selected from C, Al, Si, Ti, Zr and Nb.
Owner:CELLFORCE GROUP GMBH