11 results about "Free carrier" patented technology

This application relates to the field of coated glass technology, providing a high-temperature resistant transparent conductive oxide coated glass, its preparation method, and its application. The transparent conductive oxide coated glass includes a glass substrate, a shielding layer, an antireflective layer, a first conductive layer, and a second conductive layer stacked sequentially. The first and second conductive layers are fluorine-doped tin dioxide layers, with a crystallinity of ≥50% and a grain size of ≥50 nm. The transparent conductive oxide coated glass provided by this application has an antireflective layer that prevents sodium and potassium ions from the glass substrate from entering the conductive layer, improving the conductivity stability of the conductive layer at high temperatures. The antireflective layer improves the transmittance of the transparent conductive oxide coated glass. The first and second conductive layers ensure that the mean free path of free carriers at high temperatures is much smaller than the grain size, reducing the influence of grain boundary scattering on Hall mobility and further improving the photoelectric performance of the conductive layer at high temperatures.

This invention relates to the field of polymer dielectric materials and discloses a cyclic olefin copolymer / anthracene composite dielectric film for high-temperature energy storage, comprising 100 parts by weight of a cyclic olefin copolymer and 0.2 to 1.0 parts by weight of anthracene. The anthracene is uniformly dispersed in the amorphous network interstices of the cyclic olefin copolymer, utilizing the energy difference between their lowest unoccupied molecular orbitals to construct deep trap sites. By capturing free carriers injected at the electrode interface under high temperature and strong electric field conditions, electron migration is restricted, thereby blocking leakage conduction paths within the bulk phase of the material. This invention effectively reduces Joule heat accumulation during charge transport, improves the high-temperature withstand voltage and insulation reliability of the film, while maintaining relatively low dielectric loss. This all-organic blend system avoids local electric field distortion caused by inorganic filler agglomeration, and the preparation process is simple and mild, facilitating large-scale engineering applications.

The application discloses an electrochromic infrared emissivity transparent thin film device and a preparation method thereof, and the device has the characteristics of visible light transparency and infrared variable emission. The thin film device is prepared through layer-by-layer fine preparation and then sealed and assembled. Specifically, an indium tin oxide nanocrystal (ITO NCs) thin film is used as a positive electrode, a tungsten oxide quantum dot (WO3 QD) layer is used as an ion storage layer, Li + Base organic gel (LiFSI / PC / PMMA) is used as a gel electrolyte to construct a multilayer structure thin film device. The free carrier concentration in the ITO NCs thin film controls the infrared emissivity of the thin film device, has the advantages of fast reaction speed and low required applied voltage, can realize the infrared emissivity of 0.4-0.8 adjustable in the voltage range of-2 V-3 V, and the preparation method has the characteristics of simple operation, easy-to-obtain raw materials and easy popularization.

This invention discloses a photoelectrically tunable and dynamically switchable waveplate based on semiconductor metamaterials. Addressing the shortcomings of existing single-field modulation or simple superposition of multiple fields in doped semiconductors, such as high loss and poor coordination, this invention proposes a deep photoelectric-electrical synergistic modulation mechanism based on intrinsic semiconductors. The waveplate includes a substrate and a periodic array of intrinsic semiconductor cuboids formed thereon, with electrode structures at both ends. During modulation, a pump light is used as a pre-excitation condition to excite free carriers in the initially high-resistivity intrinsic semiconductor; simultaneously, a modulation voltage is applied to drive the nonlinear reconstruction of the spatial distribution and concentration of photogenerated carriers. Through the interlocking mechanism of the photoelectric dual fields, the effective dielectric constant and optical anisotropy of the cuboid units in the orthogonal directions are dynamically adjusted, thereby achieving efficient switching between multiple-dimensional polarization states, such as linear and circular polarization. This invention avoids the ohmic loss introduced by doping and has the advantages of compact structure, rich modulation dimensions, and high precision, making it suitable for fields such as optical communication and polarization imaging.

The present application relates to silicon-on-insulator substrates with enhanced charge trapping efficiency and high resistivity. A multilayer semiconductor-on-insulator structure is provided, wherein the handle substrate and the epitaxial layer in interface contact with the handle substrate comprise electrically active dopants of opposite type. The epitaxial layer is depleted of free carriers from the handle substrate, thereby resulting in high apparent resistivity, which improves the functioning of the structure in RF devices.

This invention relates to the field of infrared optical materials technology, specifically disclosing an N-type chromium-doped high-resistivity infrared silicon single crystal and its preparation method. The N-type chromium-doped high-resistivity infrared silicon single crystal is a single-doped silicon, with a chromium oxide doping concentration of 40ppm to 160ppm. In its preparation process, a specific isothermal heat treatment is performed during the cooling stage. This invention, through single-doping with chromium oxide, utilizes the deep-level compensation effect of chromium to significantly reduce the free carrier concentration in the silicon single crystal. The single crystal exhibits N-type conductivity, achieving a stable resistivity exceeding 1120 Ω·cm, an average infrared transmittance >53% in the 2μm~6μm band, and a stress birefringence <3nm / cm. Furthermore, the process has a wide processing window and is simple to operate. This method is particularly suitable for the preparation of silicon single crystals for large-size, high-performance infrared optical systems.

The laser and the optical module provided by the present disclosure, the laser comprises an N-InP substrate layer and a buried zone P-InP substrate layer. The active layer and the grating layer are arranged in the buried zone. The P-InP layer has strong absorption to the optical field due to the high free carrier concentration, resulting in optical loss. The introduction of the doped layer with high refractive index in the N-InP substrate layer makes the optical field deviate to the N-InP substrate layer, thereby reducing the optical absorption loss of the P-InP layer. The buried zone comprises a first connecting area, a second connecting area and a third connecting area, and the sidewalls of the three connecting areas are formed based on different etching processes. The first connecting area is formed based on dry etching, and the bottom surface of the first connecting area is located above the active layer to avoid damage to the active layer during the dry etching process. The second connecting area is formed based on a surface treatment process. The third connecting area is formed based on wet etching, which ensures that the first doped layer is not etched too much to protect the doping characteristics of the doped layer.

A kind of wide spectrum defect diagnosis system based on multi-pulse timing control belongs to ultrafast laser spectroscopy field.It is composed of wavelength tunable pulsed laser, pump excitation optical system, probe light generation and detection subsystem, Dump / push light control subsystem.Pump light excites the carrier in sample to conduction band, Dump light selectively removes free carrier in sample and retains defect state carrier, Push light re-excites defect state carrier in sample to conduction band, and double-band probe light captures transient absorption signal of sample.Combined with timing control and wide spectrum analysis, quantitative analysis of defect state depth and density is realized.Sample is perovskite, quantum dot and other semiconductor materials.The present application is not only suitable for quantum dot light emitting diode, perovskite solar cell and other optoelectronic devices, but also can be extended to photocatalysis, energy storage and other fields, and provides a new research tool for revealing the mechanism of defect state in charge separation, interface reaction and other processes.

The application discloses an erbium-doped zinc selenide composite material and a preparation method and application thereof. The preparation method comprises the following steps: dissolving zinc nitrate hexahydrate and erbium nitrate hexahydrate with a molar ratio of 0.02-0.08 in deionized water; adding sodium selenite and sodium hydroxide; then adding a reducing agent, hydrazine hydrate; after hydrothermal reaction for h, washing and drying to obtain the erbium-doped zinc selenide composite material. The material is a cubic phase ZnSe structure, and the erbium is uniformly doped in the crystal lattice in a near-spherical particle shape. The application introduces rich 4f electron defect states in the ZnSe band gap by erbium doping, significantly promotes charge transfer (chemical enhancement), and improves the free carrier concentration to excite the localized surface plasmon resonance (electromagnetic enhancement), so that the synergistic effect of the two enhancement mechanisms is realized. The detection limit of the SERS substrate for methylene blue is as low as 3.24*10 ‑8 mol / L, and the enhancement factor is as high as 1.73*10 4 , which provides a new way for environmental pollutant monitoring.

This invention relates to the field of polymer insulating materials, and discloses a cyclic olefin copolymer / anthracene composite dielectric film and its preparation method. The composite dielectric film comprises a composite film made of 100 parts by mass of a cyclic olefin copolymer and 0.1 to 2.0 parts by mass of anthracene. The anthracene is homogeneously dispersed at the molecular level within the copolymer matrix, forming a deep trap network constructed from both electron and hole deep traps within its band gap. The preparation method includes heating and stirring the raw materials in a solvent to form a homogeneous blend solution, coating the solution, allowing it to stand at room temperature for evaporation, heating and drying, and then peeling it off to form a film. By constructing a deep trap network through energy level misalignment between small molecules and the matrix, this invention effectively captures free carriers under high-temperature and strong electric field conditions, blocks long-range migration channels and reduces leakage current, while avoiding interface defects easily caused by inorganic doping, thus improving the high-temperature insulation reliability and energy storage density of the composite film.

The application discloses an anti-radiation LDMOS device structure and a preparation method thereof and electronic equipment. A plurality of uniformly distributed metal grooves are introduced in a second-conductivity-type drift region, the metal grooves are surrounded by a first-conductivity-type heavily doped region in the second-conductivity-type drift region, the metal grooves are connected to a source metal electrode and a drain metal electrode through a polysilicon resistor, the potential of the metal electrode in the drift region is regulated through voltage division of the polysilicon resistor, when a single particle is incident, a large number of free carriers are generated in the drift region, the carriers are attracted by the nearest metal groove under the action of an electric field, a new path is provided for the discharge of holes, the hole current is prevented from gathering to the source to lift the body region potential, and thus a parasitic bipolar transistor is prevented from being triggered to be turned on, and thus the SEB resistance of the LDMOS device is improved.