47 results about "Free carrier" patented technology

The invention discloses a wide-temperature-range perovskite optical storage material and a preparation method and application thereof, the chemical general formula of the wide-temperature-range perovskite optical storage material is CsCdCl3: xSb < 3 + >, yMn < + >, Mn < + > is Zr < 4 + >, Sn < 2 + >, Hf < 4 + > or Gd < 3 + >, x is more than 0 and less than 0.06, and y is more than 0 and less than 0.02. The perovskite crystal can generate free carriers under excitation of X-rays or 365-nanometer ultraviolet light, the carriers can be stored in a crystal defect trap, and the storage temperature of the carriers covers an ultra-wide temperature range from 100 K to 350 K, so that wide-temperature-range X-ray imaging, information storage and anti-counterfeiting application can be realized.

The invention discloses a preparation method of a gallium oxide semi-insulating substrate and the gallium oxide semi-insulating substrate, which comprises the following steps: performing proton irradiation treatment on a gallium oxide single-crystal substrate to introduce lattice defects into the gallium oxide single-crystal substrate, and performing annealing treatment on the gallium oxide single-crystal substrate into which the lattice defects are introduced to obtain the gallium oxide semi-insulating substrate. According to the technical scheme, lattice defects are introduced into the gallium oxide single crystal substrate by adopting a proton irradiation process to form a deep energy level trap to effectively capture free carriers, so that the carrier concentration of the material is remarkably reduced, and the resistivity of the material is increased, thereby realizing stable conversion from a conductive state to a semi-insulating state; therefore, the conditions of poor doping uniformity, insufficient thermal stability and local resistivity fluctuation existing in a traditional element doping method are overcome, meanwhile, the defects of lattice mismatch, insufficient thermal conductivity and the like caused by a heterogeneous substrate are avoided, and the electrical property uniformity and the material structure integrity of the gallium oxide substrate are effectively improved. The method has the advantages of non-contact, low cost, easy regulation and control and the like.

The invention relates to the technical field of infrared optical materials, and particularly discloses an N-type chromium-doped high-resistance infrared silicon single crystal and a preparation method thereof. The N-type chromium-doped high-resistance infrared silicon single crystal is singly doped, the doping concentration of chromium oxide is 40-160ppm, and in the preparation process, specific constant-temperature heat treatment is carried out in a cooling stage. The concentration of free carriers in the silicon single crystal is remarkably reduced by singly doping chromium oxide and utilizing the deep energy level compensation effect of chromium element, the conduction type of the single crystal is N type, the resistivity is stably increased to above 1120ohm.cm, the average infrared transmittance of the wave band of 2-6 microns is greater than 53%, the stress birefringence is less than 3nm / cm, the process window is wide, and the operation is simple and convenient. The method is particularly suitable for preparing the silicon single crystal of a large-size and high-performance infrared optical system.

The invention relates to a photovoltaic module processing method and photovoltaic module processing equipment. The photovoltaic module processing method comprises the following steps that a solar cell and a welding strip are provided, the solar cell comprises a cell piece, a positive electrode grid line and a negative electrode grid line, and the positive electrode grid line and the negative electrode grid line are located on the surface of the cell piece. And applying a reverse voltage to the solar cell through the positive grid line and the negative grid line. And welding the welding strip on the solar cell by adopting laser welding. In the processing method of the photovoltaic module, reverse voltage is applied to the solar cell and laser welding is adopted, so that charge carriers in the solar cell can be excited to generate several amperes of current, and free carriers are forced to pass through a grid line to be in contact with a cell piece, so that the contact resistance between the grid line and the cell piece can be reduced; ohmic resistance between the grid line and the battery piece is improved, and the photoelectric conversion efficiency of the photovoltaic module is further improved.

The invention provides a broadband high-reflection metal ceramic layered composite material and a preparation method and application thereof.A compact ceramic matrix BaLa2Ti3-xHfxO10 is prepared through a solid-phase reaction, x is larger than 0 and smaller than 0.9, Ti < 4 + > is equivalently replaced with Hf < 4 + > to regulate oxygen vacancies and defect energy levels in crystals, intrinsic / impurity absorption is reduced, and the visible near-infrared reflection performance is improved. And then a metal layer is constructed on the ceramic substrate through magnetron sputtering, and the layered composite material is formed. The average reflectivity of the composite material is 77% at the wave band of 0.5-2.5 microns, and the average reflectivity of the composite material is 70% at the wave band of 2.5-20 microns; and the metal layer provides free carrier retroreflection and crack bridging effects, so that the thermal shock resistance and the cracking resistance are remarkably improved, and light-heat-force collaborative optimization is realized. According to the invention, ultra-wideband high reflection and high-temperature mechanical reliability are both considered, and the material is suitable for scenes such as light path reflectors, laser protection, radiation reflection heat insulation protection and infrared stealth.

This application relates to the field of coated glass technology, providing a high-temperature resistant transparent conductive oxide coated glass, its preparation method, and its application. The transparent conductive oxide coated glass includes a glass substrate, a shielding layer, an antireflective layer, a first conductive layer, and a second conductive layer stacked sequentially. The first and second conductive layers are fluorine-doped tin dioxide layers, with a crystallinity of ≥50% and a grain size of ≥50 nm. The transparent conductive oxide coated glass provided by this application has an antireflective layer that prevents sodium and potassium ions from the glass substrate from entering the conductive layer, improving the conductivity stability of the conductive layer at high temperatures. The antireflective layer improves the transmittance of the transparent conductive oxide coated glass. The first and second conductive layers ensure that the mean free path of free carriers at high temperatures is much smaller than the grain size, reducing the influence of grain boundary scattering on Hall mobility and further improving the photoelectric performance of the conductive layer at high temperatures.

The invention discloses an erbium-doped zinc selenide composite material as well as a preparation method and application thereof. The preparation method comprises the following steps: dissolving zinc nitrate hexahydrate and erbium nitrate hexahydrate in deionized water, wherein the molar ratio of erbium ions in the zinc nitrate hexahydrate is 0.02-0.08; adding sodium selenite and sodium hydroxide; adding a reducing agent hydrazine hydrate; after hydrothermal reaction for h, washing and drying to obtain the erbium-doped zinc selenide composite material. The material is of a cubic phase ZnSe structure, erbium is uniformly doped in crystal lattices, and the material is in a nearly spherical particle shape. Rich 4f electronic defect states are introduced into a ZnSe band gap through erbium doping, charge transfer (chemical enhancement) is remarkably promoted, the free carrier concentration is improved to excite localized surface plasma resonance (electromagnetic enhancement), and the synergistic effect of two enhancement mechanisms is achieved. The detection limit of the SERS substrate to methylene blue is as low as 3.24 * 10 <-8 > mol / L, the enhancement factor is as high as 1.73 * 10 < 4 >, and a new way is provided for environmental pollutant monitoring.

An optical nonlinearity measurement method according to the present disclosure utilizes photon pair generation through a spontaneous four-wave mixing process, to observe photon pairs using an optical waveguide loaded with a two-dimensional material. Compared with the Z-scan method, the influence of free carriers on nonlinear refractive indexes is only indirect. With a parameter being the length of the attached two-dimensional material in the optical waveguide direction, a theoretical value of the coincidence rate of the photon pairs based on the coupled wave equation is fitted to a measured value of the coincidence rate of the photon pairs. For the coincidence rate of the photon pairs, the theoretical value based on the coupled wave equation is fitted to the measured value in a state reflecting the structure of the optical waveguide loaded with the two-dimensional material, and nonlinear coefficients γ1 and γ2 at that time are obtained.

The invention discloses an infrared reflection pigment and a preparation method thereof, and the preparation method comprises the following steps: weighing a Y source, a Ce source, an Al source and a Mn source according to a chemical general formula of a product, x is less than or equal to 0.02, 0lt; y < = 0.2; stirring and mixing a Y source, a Ce source, an Al source, a Mn source, a complexing agent and a solvent to obtain a mixed solution, and adding the mixed solution into the precipitant solution for reaction to obtain an insoluble substance; and mixing the insoluble substance with a mineralizing agent, and calcining to obtain the infrared reflection pigment. According to the invention, based on the basic configuration of YAlO3, Ce with variable valence and an ion radius similar to that of Y is introduced to reduce chemical defects on the surface of a material, and Mn is introduced to bring certain lattice defects, so that the concentration of free carriers in crystals is reduced, and the near-infrared reflectivity of the pigment is improved.

This invention relates to the field of polymer dielectric materials and discloses a cyclic olefin copolymer / anthracene composite dielectric film for high-temperature energy storage, comprising 100 parts by weight of a cyclic olefin copolymer and 0.2 to 1.0 parts by weight of anthracene. The anthracene is uniformly dispersed in the amorphous network interstices of the cyclic olefin copolymer, utilizing the energy difference between their lowest unoccupied molecular orbitals to construct deep trap sites. By capturing free carriers injected at the electrode interface under high temperature and strong electric field conditions, electron migration is restricted, thereby blocking leakage conduction paths within the bulk phase of the material. This invention effectively reduces Joule heat accumulation during charge transport, improves the high-temperature withstand voltage and insulation reliability of the film, while maintaining relatively low dielectric loss. This all-organic blend system avoids local electric field distortion caused by inorganic filler agglomeration, and the preparation process is simple and mild, facilitating large-scale engineering applications.

The invention discloses an interconnection-line-free carrier synchronization method and a carrier synchronization device. The method comprises the following steps: acquiring a voltage signal of a grid-connected point; determining a current voltage phase angle of the grid connection point according to the voltage signal; determining a target voltage phase angle according to the equal interval of the current voltage phase angle; calculating the time difference from the current voltage phase angle to the target voltage phase angle; counting the time difference by using a counting module of which the working frequency is higher than the carrier frequency of the converter, and generating a counting completion signal when the counting meets a preset condition; in response to the counting completion signal, determining a generation moment of the counting completion signal as a carrier synchronization reference moment; and carrying out carrier synchronization on the parallel converters based on the carrier synchronization reference moment. According to the invention, the problem of low precision of a carrier synchronization method without an interconnection line in the prior art can be solved.

The invention discloses a GaN-based high-power terahertz photoconductive emission system, and relates to the technical field of terahertz technology and radio communication. Comprising a terahertz photoconductive emitter, a bias driving module and an ultraviolet femtosecond pumping module, wherein the terahertz photoconductive emitter comprises a Si-GaN photoconductive substrate and a coplanar strip line electrode structure; the ultraviolet femtosecond pumping module is used as a pumping source, laser irradiates the Si-GaN light guide substrate, and free carriers are excited; the bias driving module is used for driving the free carriers to move at a saturation speed to form instantaneous surge current; and the terahertz photoconductive emitter is used for radiating high-power terahertz waves from the instantaneous surge current through a coplanar strip line electrode structure. The terahertz wave emitter is used for breaking through the performance bottleneck of a traditional emitter and improving the generation efficiency of terahertz waves.

The devices and methods herein relate to a Mie Avalanche Photodiode (Mie-APD). A Mie-APD leverages Mie resonant scattering and avalanche multiplication to generate current. The Mie-APD features a material layer, an absorption region, and a multiplication region. The multiplication region is configured for multiplying free carriers generated when the absorption region absorbs an electromagnetic perturbation. The material layer serves as a substrate for the absorption region and includes the multiplication region. The structure of the Mie-APD allows for the enhancement of spatial resolution, dynamic range, noise characteristics, and data acquisition speed in applications such as hazard detection, 3D sensing, low light imaging, astronomy, and medical imaging, among others. Variations to the structure, design, and fabrication of the Mie-APD can provide further improved performance and functionality such as enhanced response to specific wavelengths and / or polarizations.WO

The application relates to an optical pulse neuron, which comprises a first wavelength division multiplexer connected with a single-mode optical fiber, the first wavelength division multiplexer being used for inputting excitatory pulse from a neuron dendrite into the optical pulse neuron; a graphene-silicon hybrid waveguide connected with the first wavelength division multiplexer through the single-mode optical fiber, the graphene-silicon hybrid waveguide being used for realizing a pulse firing threshold and generating a pulse. The application utilizes the graphene-silicon hybrid waveguide to make the optical pulse neuron, the graphene-silicon hybrid waveguide can manipulate free carriers at an atomic scale, has the advantages of fast refractory period recovery, low saturated absorption threshold, low pulse emission width and energy, and high pulse firing rate, is an ideal unit for constructing an optical pulse neural network, and is favorable for improving the performance of a photonic SNN.

The application provides a semiconductor laser element provided with an ion conjugate layer, and relates to the technical field of semiconductor photoelectric devices, and sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top; the ion conjugate layer is arranged between the active layer and the upper wave layer and between the active layer and the lower waveguide layer; the ion conjugate layer can improve the molar absorption coefficient and compensate the polarization field, induce local polarization, and then regulate the carrier and Fermi level, improve the small rabbit degeneracy of the laser element, reduce the absorption loss of the free carrier, promote the stimulated radiation to exceed the spontaneous radiation, improve the particle inversion of the non-equilibrium carrier in the resonant cavity of the laser element, reduce the lasing threshold, realize the room-temperature continuous oscillation, improve the slope efficiency of the laser element, reduce the valence band step of the active layer, improve the hole injection efficiency and injection uniformity, and improve the peak gain and gain uniformity of the laser element.

The invention relates to a method for measuring electrical properties of a semiconductor quantum dot material based on free carrier absorption. Comprising the following steps that pumping laser and continuous detection laser are sequentially emitted to the same position of a semiconductor sample to be detected, the power of the pumping laser is changed, the concentration of free carriers is subjected to nonlinear change, the nonlinear characteristic of the free carriers is closely related to the characteristics of excitons and carriers in quantum dots, and the concentration of the free carriers is detected. Transmitting light signal data at different powers are collected through a photoelectric detector, and the obtained data are recorded and processed to obtain electrical characteristic parameters of the detected semiconductor sample. The method is not influenced by the response time or bandwidth limitation of the photoelectric detector, the data processing is simple, and the measurement precision is high; the measuring device is simpler, and the equipment cost is low; the method is wide in application range, can be used for measuring quantum dot materials with deep energy level traps, and is particularly suitable for measuring quantum dot materials with more shallow energy level traps.

The application discloses an electrochromic infrared emissivity transparent thin film device and a preparation method thereof, and the device has the characteristics of visible light transparency and infrared variable emission. The thin film device is prepared through layer-by-layer fine preparation and then sealed and assembled. Specifically, an indium tin oxide nanocrystal (ITO NCs) thin film is used as a positive electrode, a tungsten oxide quantum dot (WO3 QD) layer is used as an ion storage layer, Li + Base organic gel (LiFSI / PC / PMMA) is used as a gel electrolyte to construct a multilayer structure thin film device. The free carrier concentration in the ITO NCs thin film controls the infrared emissivity of the thin film device, has the advantages of fast reaction speed and low required applied voltage, can realize the infrared emissivity of 0.4-0.8 adjustable in the voltage range of-2 V-3 V, and the preparation method has the characteristics of simple operation, easy-to-obtain raw materials and easy popularization.

The invention relates to the technical field of optical communication, in particular to a silicon optical chip, an external cavity laser and a method for restraining a micro-ring nonlinear effect. The P-doped region and the N-doped region at the two sides of the micro-ring resonant waveguide are respectively connected with the ground and an input voltage through an electrical connection module, so that a transverse electric field is formed in the micro-ring resonant waveguide, and free carriers generated after light passes through the micro-ring resonant waveguide are removed through the transverse electric field; and on the other hand, the P-doped region and the N-doped region are respectively connected with an external input voltage and the ground through the electrical connection module, so that bias voltage control on the two sides of the micro-ring resonant waveguide can be realized on the basis of not increasing redundant pins, free carriers generated in the micro-ring resonant cavity are eliminated, and the reliability of the micro-ring resonant cavity is improved. Therefore, the nonlinear effect of the micro-ring resonant cavity is effectively suppressed, and the micro-ring resonant cavity has the advantages of being simple in structure and meeting the miniaturization requirement.

This invention discloses a photoelectrically tunable and dynamically switchable waveplate based on semiconductor metamaterials. Addressing the shortcomings of existing single-field modulation or simple superposition of multiple fields in doped semiconductors, such as high loss and poor coordination, this invention proposes a deep photoelectric-electrical synergistic modulation mechanism based on intrinsic semiconductors. The waveplate includes a substrate and a periodic array of intrinsic semiconductor cuboids formed thereon, with electrode structures at both ends. During modulation, a pump light is used as a pre-excitation condition to excite free carriers in the initially high-resistivity intrinsic semiconductor; simultaneously, a modulation voltage is applied to drive the nonlinear reconstruction of the spatial distribution and concentration of photogenerated carriers. Through the interlocking mechanism of the photoelectric dual fields, the effective dielectric constant and optical anisotropy of the cuboid units in the orthogonal directions are dynamically adjusted, thereby achieving efficient switching between multiple-dimensional polarization states, such as linear and circular polarization. This invention avoids the ohmic loss introduced by doping and has the advantages of compact structure, rich modulation dimensions, and high precision, making it suitable for fields such as optical communication and polarization imaging.

The invention belongs to the technical field of functional materials, and particularly relates to a cross-band light absorption empty shell material based on nano thin-layer copper sulfide and a preparation method and application of the cross-band light absorption empty shell material. The nano thin layer copper sulphide empty shell material is prepared based on a sacrificial template, the three-dimensional space geometrical shape of template crystal grains can be reserved, and regulation and control of the shape, the outer wall thin layer thickness and the band gap of the empty shell material can be achieved. The light absorption empty shell material is composed of copper sulfide and cuprous sulfide p-type semiconductor composite polycrystalline phases, the surface of a thin shell layer is constructed by a large number of nanosheet layered small single crystals, and compared with a solid material, the free carrier concentration of the empty shell light absorption material is remarkably improved, so that a remarkable light limiting effect is caused; meanwhile, due to the hollow morphology characteristic, incident light waves can be repeatedly reflected and absorbed at the shell layer of the inner wall of the cavity, and the light absorption capacity of the material is enhanced. In addition, due to hollowing, the material has low density and high specific absorption rate, and practical application requirements are met.

The application discloses a ceramic coating material with high-temperature low infrared emissivity and a preparation method thereof, and belongs to the technical field of functional ceramic coating materials. 3+ The material is prepared by radius mismatch and charge compensation effects of A-site La, Pr, Sr and Ca quaternary ions, so that B-site manganese ions form Mn 4+ Mixed valence, activate double exchange effect, improve high-temperature electronic conductivity of the material on the basis of maintaining the stability of the main phase perovskite lattice, and induce the physical transformation of the material from an insulator to a metalloid phase; the strong shielding of high-concentration free carriers generated under the metalloid characteristics to the infrared band and the plasma oscillation reflection mechanism break the traditional law that the high-temperature infrared emissivity of ceramic increases with temperature, realize the significant reduction of the high-temperature infrared emissivity of the material, and obtain the ceramic with excellent high-temperature structural stability and infrared radiation regulation ability, which is suitable for infrared stealth protection and thermal characteristic management of high-temperature hot end components in the fields of aviation and spaceflight.

The present application relates to silicon-on-insulator substrates with enhanced charge trapping efficiency and high resistivity. A multilayer semiconductor-on-insulator structure is provided, wherein the handle substrate and the epitaxial layer in interface contact with the handle substrate comprise electrically active dopants of opposite type. The epitaxial layer is depleted of free carriers from the handle substrate, thereby resulting in high apparent resistivity, which improves the functioning of the structure in RF devices.

This invention relates to the field of infrared optical materials technology, specifically disclosing an N-type chromium-doped high-resistivity infrared silicon single crystal and its preparation method. The N-type chromium-doped high-resistivity infrared silicon single crystal is a single-doped silicon, with a chromium oxide doping concentration of 40ppm to 160ppm. In its preparation process, a specific isothermal heat treatment is performed during the cooling stage. This invention, through single-doping with chromium oxide, utilizes the deep-level compensation effect of chromium to significantly reduce the free carrier concentration in the silicon single crystal. The single crystal exhibits N-type conductivity, achieving a stable resistivity exceeding 1120 Ω·cm, an average infrared transmittance >53% in the 2μm~6μm band, and a stress birefringence <3nm / cm. Furthermore, the process has a wide processing window and is simple to operate. This method is particularly suitable for the preparation of silicon single crystals for large-size, high-performance infrared optical systems.

Provided is a method for calculating the mobility of an oxide semiconductor capable of more accurately calculating the mobility of various oxide semiconductor materials. The method for calculating the mobility of an oxide semiconductor by using a computer includes a step for causing the computer to execute a step for calculating the mobility using two or more terms, which are calculated using a free carrier concentration in the oxide semiconductor, wherein the two or more terms are calculated using a scattering model derived in consideration of generation on the basis of the free carrier concentration in the oxide semiconductor, or a regression model generated on the basis of actual measurement values ​​of the mobility and the free carrier concentration.

The laser and the optical module provided by the present disclosure, the laser comprises an N-InP substrate layer and a buried zone P-InP substrate layer. The active layer and the grating layer are arranged in the buried zone. The P-InP layer has strong absorption to the optical field due to the high free carrier concentration, resulting in optical loss. The introduction of the doped layer with high refractive index in the N-InP substrate layer makes the optical field deviate to the N-InP substrate layer, thereby reducing the optical absorption loss of the P-InP layer. The buried zone comprises a first connecting area, a second connecting area and a third connecting area, and the sidewalls of the three connecting areas are formed based on different etching processes. The first connecting area is formed based on dry etching, and the bottom surface of the first connecting area is located above the active layer to avoid damage to the active layer during the dry etching process. The second connecting area is formed based on a surface treatment process. The third connecting area is formed based on wet etching, which ensures that the first doped layer is not etched too much to protect the doping characteristics of the doped layer.

A Mie photo sensor is described. A Mie photo sensor is configured to leverage Mie scattering to implement a photo sensor having a resonance. The resonance is based on various physical and material properties of the Mie photo sensor. In an example, a Mie photo sensor includes a layer of semiconductor material with one or more mesas. Each mesa of semiconductor material may include a scattering center. The scattering center is formed by the semiconductor material of the mesa being at least partially surround by a material with a different refractive index than the semiconductor material. The abutting refractive index materials create an interface that forms a scattering center and localizes the generation of free carriers during Mie resonance. One or more electrical contacts may be made to the mesa to measure the electrical properties of the mesa.

This invention discloses a light-controlled terahertz metasurface modulator with ultra-high Q-value, comprising a transmission substrate layer and a frequency control structure; the frequency control structure is stacked on the upper surface of the transmission substrate layer; the frequency control structure includes a surface periodic structure; the surface periodic structure is composed of multiple transmission units arranged in a regular matrix. This invention controls the application of laser pulses to the photosensitive material layer of the modulator by controlling an external laser, causing it to generate a large number of photo-excited free carriers, forming a periodic unit resonator, thereby achieving the modulation of the Q-value of the transmitted terahertz wave within a specific frequency band. Compared with existing technologies, this invention can achieve and control an ultra-high quality factor within an ultra-narrow frequency range, is suitable for various applications, has a simple structure, and is easy to operate.

The application provides a multifunctional chip integrated Mach-Zehnder interferometer, which can support functions such as all-optical quantum path selection, Hong-Ou-Mandel interference, wavelength conversion based on nonlinear effects, all-optical switching based on cross-phase modulation or photo-induced free carriers. Based on the relatively mature chip integrated optical path preparation process at the present stage, the application takes into account the advantages of high modulation rate, low insertion loss, high mechanical stability, high preparation efficiency and the like, and is expected to be widely applied in super-large-scale chip integrated optoelectronic systems, and to provide solid support for various applications such as coding and decoding integrated all-optical communication, communication detection integrated quantum interference, multi-degree-of-freedom multiplexing signal processing and the like.

A kind of wide spectrum defect diagnosis system based on multi-pulse timing control belongs to ultrafast laser spectroscopy field.It is composed of wavelength tunable pulsed laser, pump excitation optical system, probe light generation and detection subsystem, Dump / push light control subsystem.Pump light excites the carrier in sample to conduction band, Dump light selectively removes free carrier in sample and retains defect state carrier, Push light re-excites defect state carrier in sample to conduction band, and double-band probe light captures transient absorption signal of sample.Combined with timing control and wide spectrum analysis, quantitative analysis of defect state depth and density is realized.Sample is perovskite, quantum dot and other semiconductor materials.The present application is not only suitable for quantum dot light emitting diode, perovskite solar cell and other optoelectronic devices, but also can be extended to photocatalysis, energy storage and other fields, and provides a new research tool for revealing the mechanism of defect state in charge separation, interface reaction and other processes.

This invention provides a communication-free carrier synchronization method and related apparatus for a parallel energy storage converter system with a constant switching frequency under any grid frequency, belonging to the field of pulse width modulation technology. The method determines whether carrier synchronization of the energy storage converter is required based on the actual reference value of the carrier phase at the current moment and a preset minimum phase error resolution. When carrier synchronization is required, the actual carrier synchronization cycle count and the number of carrier synchronization adjustments are updated according to the current actual carrier phase reference value and the preset minimum phase error resolution until the number of iterations equals the number of carrier synchronization adjustments. The actual carrier synchronization cycle count is then restored, and carrier synchronization of the energy storage converter is completed. Compared with existing technologies, this invention solves the problems of phase time delay and high cost caused by the need for communication lines.