263 results about "Free carrier" patented technology

Methods and apparatus are provided for factorized processing of a set of GNSS signal data derived from signals having at least three carriers. A geometry filter is applied to the set of GNSS signal data using a geometry carrier-phase combination to obtain an array of ambiguity estimates for the geometry carrier-phase combination and associated statistical information. A bank of ionosphere filters is applied to the set of GNSS signal data using a geometry-free ionosphere carrier-phase combination to obtain an array of ambiguity estimates for the ionosphere carrier-phase combination and associated statistical information. At least one bank of Quintessence filters is applied to the set of GNSS signal data using a geometry-free and ionosphere-free carrier-phase combination to obtain an array of ambiguity estimates for the geometry-free and ionosphere-free carrier-phase combination and associated statistical information. At least one code filter is applied to the set of GNSS signal data using a plurality of geometry-free and ionosphere-free code-carrier combinations to obtain an array of ambiguity estimates for the code-carrier combinations and associated statistical information. The resulting arrays are combined to obtain a combined array of ambiguity estimates for all carrier phase observations and associated statistical information.

Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode. In another embodiment, a nanowhisker is surrounded by polymer material containing dopant material. A step of rapid thermal annealing causes the dopant material to diffuse into the nanowhisker. In a further embodiment, a nanowhisker has a heterojunction between two different intrinsic materials, and Fermi level pinning creates a pn junction at the interface without doping.

An electro-optic modulator is formed on a silicon-on-insulator (SOI) rib waveguide. An optical field in the modulator is confined by using an electrically modulated microcavity. The microcavity has reflectors on each side. In one embodiment, a planar Fabry-Perot microcavity is used with deep Si/SiO₂ Bragg reflectors. Carriers may be laterally confined in the microcavity region by employing deep etched lateral trenches. The refractive index of the microcavity is varied by using the free-carrier dispersion effect produced by a p-i-n diode formed about the microcavity. In one embodiment, the modulator confines both optical field and charge carriers in a micron-size region.

A silicon-based optical modulator is configured as a multi-segment device that utilizes a modified electrical data input signal format to address phase modulation nonlinearity and attenuation problems associated with free-carrier dispersion-based modulation. The modulator is formed to include M separate segments and a digital signal encoder is utilized to convert an N bit input data signal into a plurality of M drive signals for the M modulator segments, where M≧2^N/2. The lengths of the modulator segments may also be adjusted to address the nonlinearity and attenuation problems. Additional phase adjustments may be utilized at the output of the modulator (beyond the combining waveguide).

An electro-optic modulator arrangement for achieving switching speeds greater than 1 Gb/s utilizes pre-emphasis pulses to accelerate the change in refractive index of the optical waveguide used to form the electro-optic modulator. In one embodiment, a feedback loop may be added to use a portion of the modulated optical output signal to adjust the magnitude and duration of the pre-emphasis pulses, as well as the various reference levels used for modulated. For free carrier-based electro-optic modulators, including silicon-based electro-optic modulators, the pre-emphasis pulses are used to accelerate the movement of free carriers at the transitions between input signal data values.

The invention relates to methods for manufacturing semiconductor devices. Processes are disclosed for implementing suspended single crystal silicon nano wires (NWs) using a combination of anisotropic and isotropic etches and spacer creation for sidewall protection. The core dimensions of the NWs are adjustable with the integration sequences: they can be triangular, rectangular, quasi-circular, or an alternative polygonal shape. Depending on the length of the NWs, going from the sub-micron to millimeter range, the NWs may utilize support from anchors to the side, during certain processing steps. By changing the lithographic dimensions of the anchors compared to the NWs, the anchors may be reduced or eliminated during processing. The method covers, among other things, the integration of Gate-All-Around NW (GAA-NW) MOSFETs on a bulk semiconductor. The GAA structure may consist of a silicon core fabricated as specified in the invention, surrounded by any usable gate dielectric, and finally by a gate material, such as polysilicon or metal. The source and drain of the GAA-NW may be connected to the bulk semiconductor to avoid self heating of the device over a wide range of operating conditions. The GAA-NW MOS capacitor can also be used for the integration of a Gate-All-Around optical phase modulator (GAA modulator). The working principle for the optical modulator is modulation of the refractive index by free carrier accumulation or inversion in a MOS capacitive structure, which changes the phase of the propagating light.

Methods and apparatus provide for positioning of a rover antenna from GNSS data derived from multi-frequency signals and correction data derived from a network of reference stations. At each of a plurality of epochs, the GNSS data and correction data are used to estimate values defining a rover antenna position and a set of multi-frequency ambiguities. An ionospheric-free carrier-phase ambiguity per satellite is estimated based on a known rover antenna position. The estimated ionospheric-free carrier-phase ambiguity is combined with an estimated widelane ambiguity and with an estimated ionospheric-free ambiguity and with values defining the known rover antenna position to obtain values defining an aided rover antenna position and aided multi-frequency ambiguities.

The invention discloses a method for preparing nitrogen-doped graphene with high nitrogen doping amount. The method comprises the following steps: (1) dispersing of graphene; (2) ultrasonic dispersion; (3) microwave heating; and (4) filtering and drying. The nitrogen doping amount of the nitrogen-doped graphene prepared by the method disclosed by the invention is 10%-15.0%, the density of free carriers in graphene is greatly increased by the high nitrogen doping amount, the interaction of graphene and metal is enhanced, no oxidation pretreatment is carried out, no toxic solvent is used in the reaction process, reactants are simple in component, reaction conditions are mild, and the prepared nitrogen-doped graphene has excellent electrochemical property and can be used for preparation of new energy materials such as lithium ion battery, lithium-air battery, super capacitor electrode material and fuel cell oxygen reduction catalysts. According to the method disclosed by the invention, a high-pressure kettle is heated by using microwaves without high temperature; the method is low in energy consumption, is carried out in an airtight environment and therefore hardly causes environment pollution; in addition, the method is simple in process and convenient to operate and needs less production equipment, thus, the cost is further reduced.

Apparatus for and methods of thermally processing undoped or lightly doped semiconductor wafers (30) that typically are not very absorptive of an annealing radiation beam (14) are disclosed. The apparatus (10) uses a relatively low power activating radiation beam (240) with a photon energy greater than the bandgap energy of the semiconductor substrate in order to generate free carriers (315) at and near the substrate surface (32). The free carriers so generated enhance the absorption by the substrate surface of the longer wavelength annealing radiation beam. The annealing radiation beam is thus able to rapidly heat the substrate surface and permit subsequent rapid cooling to obtain, for example, a high level of electrical activity (activation) of dopants (310) formed therein. The invention obviates the need to pre-heat the substrate in order to increase absorption of the annealing radiation beam when performing thermal processing.

An antenna layer is provided separate from an active layer in a solar cell device based on organic materials, enabling improved energy conversion in the solar cell devices by increasing the efficiency and spectral cross-section for the capture of incident light. The antenna layer may be anthracene or an anthracene derivative, for example. The antenna layer is operable to harvest light and transfer captured excitation energy to the active layer of the solar cell device using an energy transfer mechanism, wherein the charge separation and/or the formation of free carriers takes place. The antenna layer also limits the ultraviolet exposure of the active layer thus extending the operating life of the solar cell. The active layer and the antenna layer of a solar cell device may be independently optimized such that there is an increased spectral range and/or cross-section of light absorption and thus a higher photovoltaic efficiency.

A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).

A photoelectric converter in which an intermediate layer is provided between a first photoelectric-conversion-layer including a first p-type-semiconductor-layer and a first n-type-semiconductor-layer and a second photoelectric-conversion-layer including a second p-type-semiconductor-layer and a second n-type-semiconductor-layer. The intermediate layer includes an n-type-transparent conductive-oxide-film in contact with the first n-type-semiconductor-layer and a p-type-transparent-conductive oxide-film in contact with the second p-type-semiconductor-layer respectively having a bandgap equal to or higher than 1.5 electron volts. A width of a low carrier concentration region in a film thickness direction, in which a concentration of a free carrier formed near at least one of an interface on which the p-type-transparent-conductive-oxide-film comes into contact with the n-type-transparent-conductive-oxide-film and an interface on which the p-type-transparent-conductive-oxide-film comes into contact with the second p-type-semiconductor-layer is equal to or lower than 1×10¹⁸ cm⁻³, is equal to or less than 5 nanometers.

A semiconductor integrated circuit device according to the invention includes an N-type embedded diffusion region between a substrate and a first epitaxial layer in island regions serving as small signal section. The substrate and the first epitaxial layer are thus partitioned by the N-type embedded diffusion region having supply potential in the island regions serving as small signal section. This structure prevents the inflow of free carriers (electrons) generated from a power NPN transistor due to the back electromotive force of the motor into the small signal section, thus preventing the malfunction of the small signal section.

A process for shifting the bandgap energy of a quantum well layer (e.g., a III-V semiconductor quantum well layer) without inducing complex crystal defects or generating significant free carriers. The process includes introducing ions (e.g., deep-level ion species) into a quantum well structure at an elevated temperature, for example, in the range of from about 200 ° C. to about 700 ° C. The quantum well structure that has had ions introduced therein includes an upper barrier layer, a lower barrier layer and a quantum well layer. The quantum well layer is disposed between the upper barrier layer and the lower barrier layer. The quantum well structure is then thermally annealed, thereby inducing quantum well intermixing (QWI) in the quantum well structure and shifting the bandgap energy of the quantum well layer. Also, a photonic device assembly that includes a plurality of operably coupled photonic devices monolithically integrated on a single substrate using the process described above.

A fast silicon-on-insulator (SOI) waveguide-based optical device enhanced with minority charge carrier lifetime modifiers enables faster modulation speeds in optical attenuators, optical intensity/phase-modulators, and optical switches whose operation principles are based on free-carrier injection into a waveguide. The waveguide is doped with gold (Au) or platinum (Pt) such that when a drive voltage (applied to the device) is turned off, the minority charge carriers rapidly annihilate because gold doping reduces the minority carrier lifetime, which improves transient characteristics of the optical device. Integration of the fast active device with passive devices such as WDM demultiplexers/multiplexers on the SOI optical waveguide platform enables realization of monolithic integrated optical components for advanced functionality such as dynamic spectral equalization.