1182 results about "Potential difference" patented technology

An interface circuit includes a reference voltage generation circuit to generate a reference voltage, a differential voltage signal generation circuit to convert send data input in sending data into a pair of differential voltage signals and output the pair of differential voltage signals based on the reference voltage generated by the reference voltage generation circuit, a receiver to convert a pair of differential voltage signals input in receiving data and output received data, and a receiver test circuit to perform a sensitivity test of the receiver, the receiver test circuit having a resistance circuit to generate a pair of differential voltage signals having a potential difference being necessary for the sensitivity test of the receiver.

The invention belongs to the field of data processing, and particularly relates to a high-voltage direct-current electric field intensity measuring method and a related device. In the device, an optical fiber direct-current electric field sensor at least comprises a signal processing unit, an optical fiber voltage sensing head, a fixed electrode and a rotating electrode. The method comprises the following steps: deploying a measuring device in a space to be measured; the rotating electrode is controlled to rotate at a constant speed, so that the center distance between the fixed electrode and the rotating electrode is periodically changed along with the rotating track; collecting an alternating current signal voltage generated by an alternating potential difference between the fixed electrode and the rotating electrode in a constant-speed rotating process through an optical fiber voltage sensing head; and performing numerical processing on the alternating current signal voltage through a signal processing unit to obtain a measured value of the high-voltage direct current electric field intensity, and optimizing the measured value in combination with a physical compensation model and a data driving compensation model. The method can realize the measurement of the high-voltage direct-current space electric field intensity, improve the measurement accuracy and expand the measurement range.

The invention relates to the technical field of semiconductor testing, in particular to a radio frequency testing bonding pad and a radio frequency testing structure. The radio frequency test pad comprises a substrate; the connection supporting layer is located on the substrate, and the connection supporting layer comprises a metal layer; the connection ports are located on the connection supporting layer, and the connection ports comprise a grounding port and a signal port; the grounding port is conductively connected through the metal layer; the signal port and the metal layer are not conductive. The signal port and the metal layer are arranged to be non-conductive, so that potential difference between the signal port and a structure below is avoided, parasitic capacitance is inhibited, and the accuracy of radio frequency testing is further improved.

The invention discloses a slurry electrolysis device and battery production equipment, and relates to the technical field of lithium batteries. As an electrolysis positive electrode and an electrolysis negative electrode are positioned between a slurry inlet and a slurry outlet and are in contact with battery slurry, the electrolysis positive electrode and the electrolysis negative electrode are in contact with the battery slurry; under the condition that the potential applied by a power supply for connecting the electrolysis positive electrode and the electrolysis negative electrode is greater than the oxidation potential of a to-be-electrolyzed metal element or alloy in the battery slurry, the to-be-electrolyzed metal element or alloy in the battery slurry can serve as a micro positive electrode, the surface of the to-be-electrolyzed metal element or alloy is oxidized due to potential difference and is gradually dissolved into ions, and the ions are gradually dissolved along with electrolysis. And large metal elementary substance particles are continuously oxidized, the volume is gradually reduced, and finally, the metal elementary substance particles are completely dissolved into metal ions without discharge risk, so that the removal of the metal elementary substance or alloy to be electrolyzed in the battery slurry is realized, and the self-discharge risk of the battery is reduced.

The invention discloses a method for characterizing physical properties of a single-layer graphene / semiconductor heterojunction. The method comprises the following steps: providing a physical property model about a single-layer graphene-semiconductor heterojunction, wherein influence factors comprise the change of Fermi level of single-layer graphene after the heterojunction is formed and the influence of an interface state on a formation position of a contact potential difference; extracting heterojunction electrical characteristics by using a Kelvin probe force microscope; the interface layer spacing is obtained; and importing the heterojunction electrical characteristics and the interface interlayer spacing into a physical characteristic model, and analyzing to obtain physical characteristics. According to the new theoretical model and the method for realizing the nondestructive characterization of the physical characteristics of the heterojunction by using the Kelvin probe microscope based on the theoretical model, the influence of the change of the Fermi level of the single-layer graphene and the interface state on the formation position of the contact potential difference is fully considered; key interface physical properties, especially built-in potential and depletion region characteristics which are crucial to device performance, can be accurately analyzed.

A working electrode is inserted into the plant to monitor the health of the plant components or to detect physical, mechanical damage or environmental change in the soil or atmosphere. A standard electrode is inserted into soil surrounding the plant or in the plant itself. A data logger connects the working electrode and the standard electrode. The data logger measures the potential difference between the working electrode and the electrolyte to provide the ability to compare a measured potential difference with a predetermined critical potential difference for the plant. A second electrochemical cell can inject electrons and ions into the plant. The plant can be used as a sensor to monitor the environmental change in the soil or in the atmosphere.

Devices for improved nanopore sensing are described. An example device has a structure arranged to separate an analyte reservoir and an outlet chamber. An example device has a structure arranged to separate an analyte reservoir and an outlet chamber. The structure can include an array of nanopore structures, each nanopore structure comprising a passage for fluid connection through the structure between the analyte reservoir and outlet chamber. Control terminals can be arranged for applying a control signal to alter the electrical potential difference across that nanopore structure. Some embodiments include an electronic circuit configured to detect a signal from an electrical transduction element at each nanopore structure. Additional structural features and methods of operating and making the devices are described.

The invention discloses a single-cluster XNOR logic gate and a signal reading method thereof. One end of a single cluster device is provided with a source electrode and a drain electrode, and the other end of the single cluster device is provided with a gate electrode. A single-cluster XNOR logic gate is placed in a resonance tunneling area for signal reading, and when the input potential difference between a source electrode and a drain electrode of a single-cluster device is 0, the gate electrode outputs a high level; and when the input potential difference between the source electrode and the drain electrode of the single cluster device is not 0, the gate electrode outputs a low level.

The invention relates to the technical field of digital-analog hybrid integrated circuit design, and particularly provides a FlexRay bus receiver with low noise and wide common-mode input range, which is characterized in that a common-mode voltage division module receives a differential signal output by a bus and carries out voltage division, and then a pre-amplification module carries out amplitude limiting amplification on the signal after voltage division; the hysteresis comparator module generates threshold hysteresis and generates a logic level signal based on the signal after amplitude limiting amplification, and the digital logic receiving module receives and processes the logic level signal, generates a receiving data signal and transmits the receiving data signal to an external controller. According to the invention, the differential signal pair received on the FlexRay bus is subjected to voltage division and amplitude limiting amplification, so that a wider common-mode input range is provided, the problem of large ground potential difference is solved, and the capability of suppressing common-mode noise and the communication stability are improved. Meanwhile, the hysteresis comparator module suppresses noise false triggering by generating threshold hysteresis, and the anti-noise capability of the receiver is remarkably improved.

The invention provides an orthogonal electromagnetic field confinement fusion device and a fusion method. The fusion device comprises a vacuum combustion furnace which comprises a fusion reaction chamber and an inductance tube; the central shaft is arranged in the vacuum combustion furnace in a penetrating manner, a constant potential difference is applied between the inner wall of the vacuum combustion furnace and the central shaft, and a radial polarization electric field is generated in the vacuum combustion furnace; the inductance coil is wound on the outer wall of the vacuum combustion furnace, generates an axial confinement magnetic field in the vacuum combustion furnace and generates a magnetic mirror in the fusion reaction chamber; the fusion method comprises the following steps: S1, constructing an orthogonal electromagnetic field; s2, feeding fuel; s3, radially polarizing the ion ring; s4, induction of FRC is carried out; s5, axial fusion is carried out; s6, energy recovery; the device has the effects of simplifying the nuclear fusion reaction device, reducing the cost of the nuclear fusion reaction and improving the efficiency of the nuclear fusion reaction.

The object of the present disclosure is to provide a piezoelectric device and the like capable of suppressing temperature unevenness in a piezoelectric layer during polarization of the piezoelectric device. A piezoelectric device having a capacitor structure in which a first electrode layer having two first electrode terminals, a piezoelectric layer, and a second electrode layer are laminated in this order, wherein the first electrode layer is Joule-heated by a potential difference between the two first electrode terminals, and the piezoelectric layer is polarized by an electric field generated by a potential difference between the first electrode layer and the second electrode layer while being heated by the Joule-heated first electrode layer.

A degradation determination device determines whether each of a first opening / closing device and a fuse provided on a power path is in a degraded state. The power path has a positive electrode-side power line and a negative electrode-side power line. The first opening / closing device and the fuse are provided on the negative electrode-side power line. The degradation determination device is provided with a first potential detection unit that detects a first potential at one end of the first opening / closing device and a second potential at the opposite end thereof, a second potential detection unit that detects a first potential at one end of the fuse and a second potential at the opposite end thereof, and a control unit that determines whether each of the first opening / closing device and the fuse is in a degraded state, based on a potential difference between the first and second potentials.

The present invention discloses a high-precision foundation pit retaining wall leakage potential measurement system and method. An electrode matrix, an electric field establishment module, a reference electrode, a multi-channel electrical signal parallel measurement device and a data processing terminal are respectively arranged in the foundation pit. The outer side of the non-polarized electrode of the electrode matrix is ​​filled with bentonite slurry. The bentonite slurry can infiltrate the contact part between the non-polarized electrode and the foundation pit soil to change the properties of the soil, thereby controlling the contact potential between the electrode matrix and the soil and reducing the measurement error. At the same time, the non-polarized electrode and the reference electrode of the electrode matrix are respectively provided with an ion concentration meter and a temperature sensor. The data processing terminal can correct the potential difference according to the electrode temperature and ion concentration of the non-polarized electrode and the reference electrode temperature and reference ion concentration of the reference electrode to calibrate the electrode extreme difference caused by temperature and ion concentration, thereby obtaining the true potential difference of the foundation pit, thereby effectively improving the measurement accuracy and improving the accuracy and reliability of the foundation pit leakage detection results.

A gate structure is formed on a substrate at the junction of a well region and a drift region, the gate structure on the drift region is doped to form a first doped region and a second doped region which are adjacent to each other, the first doped region is doped with first type ions, and the second doped region is doped with second type ions; the conduction types of the second type ions and the first type ions are different, so that the first doped region and the second doped region form a reverse biased PN junction, an electric field caused by the interconnection structure can be balanced and dispersed in the direction from the drain electrode to the source electrode, and the high voltage of the interconnection structure can be effectively isolated; besides, the first doped region and the second doped region form a reverse-biased PN junction to disperse the high potential difference between the first doped region and the second doped region, so that the electric field intensity and the potential peak value on the surface of the device are effectively reduced, the segmented voltage division effect is beneficial to optimization of electric field distribution on the surface of the device, electric field concentration is reduced, and the performance of the device is improved. Therefore, the breakdown voltage of the semiconductor structure is improved.

An image forming apparatus includes a controller which performs a continuation process in which a toner image is secondarily transferred to a back side of a sheet conveyed from a double side conveyance portion, when performing a double side print in a case in which a sheet of a feeding portion is not conveyed to a secondary transfer portion. The controller controls so that in a case of performing the continuation process, while an image formation area of the intermediary transfer belt passes through the secondary transfer portion, a predetermined voltage, which makes an outer roller be at a potential of a normal charge polarity side to an inner roller and makes an absolute value of the potential difference between the inner roller and the outer roller be less than a discharging threshold value, is applied to the secondary transfer portion.

A method for measuring an earth resistance in a battery charging system connected to the power grid includes, for each measurement cycle, injecting a first, alternating current, signal between a first, neutral node and a second, earth node, detecting a first voltage signal representing an electrical potential difference between the first and second node, calculating an earth resistance value as a function of the first voltage signal. Further, injecting between the first, neutral node and the second, earth node an information signal representing the calculated earth resistance value. Before the injecting the first alternating current signal: detecting one or more information signals generated by further battery charging systems connected to the power grid; determining the earth resistance value based on the information content of the received information signals; proceeding with steps a) to c) if a number of information signals lower than the pre-set limit value is detected.

The present invention relates to a leakage current suppression system for an alternating-current power system. The leakage current suppression system comprises: a variable-frequency compensation control module, which regulates the frequency and signal amplitude in a circuit on the basis of an equipotential feature of a consumer loop of a power system, in order to match load characteristics and achieve dynamic signal amplitude fixation; a real-time monitoring module, which is used for monitoring the frequency, current and voltage of the power system; a central processing unit, which processes data from the monitoring module, and executes data analysis to identify frequency and current variations in the case of current leakage or electric shock; and a leakage current suppression module, which is connected to the real-time monitoring module and is configured with a mechanism which is automatically activated when frequency and current abnormalities are detected, and is used for dynamically adjusting a circuit response to suppress a leakage current. The modules are connected in parallel to the consumer loop, perform rapid adaptive tuning compensation for the parallel frequency resonance in a load loop, and dynamically regulate the current phase and amplitude, so that a zero potential difference at a target load end and current suppression for a target load are achieved, and a suppression and shielding effect on circuit leakage is achieved.

The utility model provides an electronic device which comprises a first structural member and a second structural member, the first structural member comprises a first metal matrix, the second structural member comprises a second metal matrix and a decoration layer arranged on one side of the second metal matrix, and the first metal matrix is electrically connected with the second metal matrix. The corrosion potential of the first metal matrix is lower than that of the second metal matrix; an insulating layer is further arranged on the side, away from the second metal base body, of the decorative layer, the insulating layer is a transparent or semitransparent layer, and the impedance of the insulating layer is larger than or equal to 2000 ohms. The insulating layer is arranged on the decorative layer on the second metal matrix with high corrosion potential, so that a potential difference caused by a closed loop formed between the metal matrixes with different chemical activities can be prevented in a sweat environment or a salt mist environment, and the probability of electrocorrosion of the first metal matrix with low corrosion potential is further reduced; and the long-term use requirement of the electronic equipment is well met.

The invention discloses an equipment electric leakage fault positioning method and system, and relates to the technical field of electric leakage detection, and the method comprises the steps: obtaining a plurality of pieces of electric leakage point location information of to-be-positioned equipment, screening each piece of electric leakage point location information based on a preset electric leakage threshold value, obtaining a plurality of pieces of candidate point location information, carrying out the electric leakage regionalization processing of each piece of candidate point location information, and obtaining a plurality of pieces of candidate point location information; the method comprises the steps of obtaining a to-be-positioned area corresponding to a to-be-positioned device and a plurality of reference electric leakage potential differences, performing electric leakage positioning on the to-be-positioned area by adopting each reference electric leakage potential difference to obtain a target area, and determining an electric leakage position corresponding to the to-be-positioned device according to the target area and a preset positioning function. The defects that in the prior art, whether electric leakage happens to the metal shell of the electrical equipment or not is judged mainly through a test pencil, only an approximate area of an electric leakage point can be determined, the specific position cannot be accurately determined, the electric leakage point is difficult to accurately position, and the operation reliability of the electrical equipment is reduced are overcome.

The invention relates to the technical field of micro aircrafts, in particular to an atmospheric potential energy self-sustaining aircraft. Comprising a stator component provided with a positive electrode and a negative electrode which are distributed crosswise in the circumferential direction; a rotor member having a conductive sheet; the conducting strip can obtain charges from the positive electrode or the negative electrode of the stator part, so that the rotor part is driven to rotate; the rotor wing assembly is connected to the rotor component; the positive charge collecting part is electrically connected with the positive electrode and used for collecting positive charges in the atmosphere and supplying the positive charges to the positive electrode; and the grounding part is electrically connected with the negative electrode and is used for grounding the negative electrode. By arranging the positive charge collecting component and the grounding component, the aircraft can directly obtain electric energy from an atmospheric electric field, and the natural potential difference between the high altitude and the ground is used for driving the rotor component to rotate, so that continuous power is provided for the aircraft. The mode does not depend on a traditional storage battery or a solar cell, the problems that an existing micro aircraft is short in endurance time and limited by light conditions are solved, and cross-day and cross-night continuous flight can be achieved.

The invention relates to an electric leakage suppression system for an alternating-current power system, and the system comprises a variable-frequency compensation control module which adjusts the frequency and signal amplitude in a circuit according to the equipotential characteristics of a power utilization loop of the power system, so as to match the load characteristics and achieve the dynamic fixation of the signal amplitude; the real-time monitoring module is used for monitoring the frequency, current and voltage of the power system; the central processing unit is used for processing data from the monitoring module, executing data analysis and identifying frequency and current changes under the condition of electric leakage or electric shock; and the electric leakage suppression module is connected with the real-time monitoring module, is provided with a mechanism which is automatically activated when frequency and current are detected to be abnormal, and is used for dynamically adjusting circuit response to suppress leakage current. And the modules are connected in parallel to the power utilization loop, perform rapid self-adaptive modified modulation compensation on the parallel frequency resonance of the load loop, and dynamically adjust the current phase and amplitude so as to realize the zero potential difference of the target load end and the current suppression on the target load, and form the suppression and shielding effects on the leakage of the circuit.

The utility model particularly relates to a base station which comprises a data center module, an external connection structure and a vertical rod structure. The external connection structure is arranged on the data center module, and the external connection structure is electrically connected with the data center module. The external connection structure is arranged at one end of the vertical rod structure and electrically connected with the vertical rod structure. The vertical rod structure is a conductor and is provided with a grounding site, and the grounding site is used for grounding. According to the utility model, the data center module is grounded through the vertical rod structure, the grounding site can be in direct contact with the ground and can also be connected with an external ground wire, the grounding function of the reference station is realized, and when the reference station is struck by lightning, current is rapidly conducted to the ground through the vertical rod structure, thereby reducing the potential difference in the data center module and improving the reliability of the data center module. Destructive voltage is prevented from being generated, and the risk that electrical components in the data center module are damaged by lightning stroke is effectively avoided. The problem that internal electrical components are easily damaged when the reference station encounters lightning stroke in the prior art is solved.

A novel semiconductor device is provided. A first circuit is electrically connected to a second circuit through a first wiring; the first circuit is electrically connected to a fourth circuit through each of a third wiring and a fourth wiring; the second circuit is electrically connected to a third circuit through a fifth wiring; the first circuit has a function of establishing or breaking electrical continuity among the first wiring, a second wiring, the third wiring, and the fourth wiring; the third circuit has a function of retaining a potential corresponding to first data; the second circuit has a function of supplying the potential corresponding to the first data from the first wiring to the fifth wiring, a function of retaining a potential corresponding to second data, and a function of amplifying a change in a potential of the fifth wiring and outputting the amplified change to the first wiring; and the fourth circuit has a function of outputting the potential corresponding to the first data or the second data in accordance with a potential difference between the third wiring and the fourth wiring.

Method for the contactless determination of eye and / or eyelid movement, characterized in that between the body surface (1) and at least one reference electrode (2) a potential difference ΔP B and by means of at least one measuring electrode (3) which corresponds to the potential difference ΔP B generated, electric field and the potential change at the measuring electrode (3) generated by an eye and / or eyelid movement is measured relative to the potential of the reference electrode (2) and evaluated as a measure of an eye and / or eyelid movement.

The invention provides a bidirectional bootstrap power supply circuit and method and a power switch device driven by self power supply. The circuit comprises a bidirectional power taking module, a first energy storage module and a second energy storage module. The bidirectional power taking module is connected between the first power supply end and the second power supply end; the first energy storage module and the second energy storage module respectively comprise a switching tube and an energy storage capacitor, the switching tube is connected between the bidirectional power taking module and the first end of the energy storage capacitor, the first end of the energy storage capacitor is connected with a power supply output end, the second end is connected with a power supply end, and the power supply output end supplies power to driving signals of the bidirectional switching power device; when a potential difference exists between the two power supply ends, the circuit takes power from the high-voltage end through the bidirectional power taking module, charges the corresponding energy storage capacitor by using the switch tube or the body diode thereof, and establishes a driving power supply voltage; when the power device is conducted and the potentials at the two ends are close, the electric energy is bidirectionally transferred between the two energy storage capacitors. An external isolation power supply can be omitted, the power supply architecture of the bidirectional power device is simplified, and the cost is reduced.

An embodiment of the present application discloses an OLED display panel and a preparation method thereof, wherein the OLED display panel includes a light-shielding layer, a flat layer, an anode layer, a light-emitting material layer, and a cathode layer. The light-shielding layer includes a light-shielding structure and a first structure arranged on the same layer. The anode layer includes an anode and a third structure arranged on the same layer. The first structure and the third structure located in the non-luminous area are electrically connected. The light-emitting material layer is arranged on a side of the anode layer away from the substrate. The cathode layer is arranged on a side of the light-emitting material layer away from the substrate. In the non-luminous area, the first structure is connected to a constant voltage, which is less than or equal to 20V. The light-emitting material layer is provided with a first via hole, and the cathode layer is electrically connected to the third structure through the first via hole. The cathode layer is electrically connected to the first structure to form a potential difference, so that the signal of the cathode layer is transmitted from the cathode layer to the first structure, thereby reducing the path length of the cathode layer signal transmission and reducing the voltage drop of the cathode layer.

The utility model discloses an automatic switching device for a DC power supply, and the device comprises a main control module which is used for obtaining the potential difference of two DC buses at different sampling moments through a voltage detection module, and obtaining a target voltage according to the potential difference; and if it is monitored that the bus battery pack voltage of one section of direct-current bus is abnormal based on the target voltage, controlling a contactor to pull in so as to make the two sections of direct-current buses parallel, thereby using a normal power supply to supply power to the abnormal direct-current bus. According to the invention, a normal power supply is automatically and quickly used to replace an abnormal power supply to supply power to the DC bus with abnormal power supply, the current situation of passive and hysteresis operation of personnel is changed, uninterrupted power supply is realized, the power failure time is reduced, loss caused by power failure is avoided, the user experience is improved, and the application prospect is wide. According to the invention, automatic switching of the dual power supplies during fault, maintenance and operation mode adjustment is realized, the operation of operation and maintenance personnel on equipment is reduced, and the safety coefficient of operation is improved.

The invention provides a silicon substrate gallium nitride power semiconductor device and a preparation method thereof, and relates to the technical field of semiconductors. The device comprises a first silicon substrate layer, a second substrate layer, a substrate electrode and a gallium nitride device layer, the second substrate layer comprises a laminated structure which is periodically arranged; the laminated structure sequentially comprises a substrate functional layer and a second silicon substrate layer from bottom to top; wherein the first silicon substrate layer and the second silicon substrate layer adopt a first type of doping, and the substrate functional layer adopts a second type of doping, so that a bipolar doped substrate structure is formed. Based on this, when the silicon substrate gallium nitride power semiconductor device is in a high-voltage reverse bias state, at least one PN junction in the bipolar doped substrate structure can be in a reverse bias state due to the potential difference between the lower substrate electrode and the drain electrode of the silicon substrate gallium nitride power semiconductor device; and the breakdown voltage of the silicon substrate gallium nitride power semiconductor device in the vertical direction is further improved.

The present application relates to the technical field of leakage detection, in particular to a method and system for detecting leakage of an anti-seepage layer in the construction of an artificial wetland, which determines the seepage time period in which each electrode grid may produce seepage by analyzing the changes in the potential difference data and humidity data of the electrode grid below the anti-seepage layer; based on the seepage time period, analyzes the coincidence of liquid diffusion between different electrode grids, and divides the electrode grid into several diffusion regions; divides the diffusion regions into suspected damage regions and diffusion interaction regions, and analyzes the area relationship between the suspected damage regions and the diffusion interaction regions to obtain the seepage damage probability of the diffusion region corresponding to each electrode grid; and according to the seepage damage probability, marks the leakage point region. Through the present application, the region where the anti-seepage layer may be damaged and diffused can be more accurately positioned, the accuracy of identifying the specific position of the anti-seepage layer where leakage occurs is improved, and the credibility of the leakage detection result of the anti-seepage layer is further improved.

To provide a film-forming device capable of stabilizing a film thickness distribution of a protective film.SOLUTION: A film-forming device according to the present invention includes: a film-forming chamber; a holder for holding a substrate inside the film-forming chamber; an inlet pipe for introducing a carbon-containing source gas into the film-forming chamber; a cathode electrode with a filament shape; a first power supply that heats the cathode electrode by applying current; an anode electrode provided around the cathode electrode; a second power supply that generates a discharge between the cathode electrode and the anode electrode; a third power supply that applies the potential difference between the cathode electrode or the anode electrode and the substrate; an ionization region, in which the gas is ionized by the discharge; and an acceleration region, in which the ionized gas is accelerated by the potential difference, in which a soft magnetic cylinder is provided around the acceleration region.SELECTED DRAWING: Figure 1