840 results about "Potential difference" patented technology

An interface circuit includes a reference voltage generation circuit to generate a reference voltage, a differential voltage signal generation circuit to convert send data input in sending data into a pair of differential voltage signals and output the pair of differential voltage signals based on the reference voltage generated by the reference voltage generation circuit, a receiver to convert a pair of differential voltage signals input in receiving data and output received data, and a receiver test circuit to perform a sensitivity test of the receiver, the receiver test circuit having a resistance circuit to generate a pair of differential voltage signals having a potential difference being necessary for the sensitivity test of the receiver.

The invention relates to the technical field of semiconductor testing, in particular to a radio frequency testing bonding pad and a radio frequency testing structure. The radio frequency test pad comprises a substrate; the connection supporting layer is located on the substrate, and the connection supporting layer comprises a metal layer; the connection ports are located on the connection supporting layer, and the connection ports comprise a grounding port and a signal port; the grounding port is conductively connected through the metal layer; the signal port and the metal layer are not conductive. The signal port and the metal layer are arranged to be non-conductive, so that potential difference between the signal port and a structure below is avoided, parasitic capacitance is inhibited, and the accuracy of radio frequency testing is further improved.

The invention discloses a method for characterizing physical properties of a single-layer graphene / semiconductor heterojunction. The method comprises the following steps: providing a physical property model about a single-layer graphene-semiconductor heterojunction, wherein influence factors comprise the change of Fermi level of single-layer graphene after the heterojunction is formed and the influence of an interface state on a formation position of a contact potential difference; extracting heterojunction electrical characteristics by using a Kelvin probe force microscope; the interface layer spacing is obtained; and importing the heterojunction electrical characteristics and the interface interlayer spacing into a physical characteristic model, and analyzing to obtain physical characteristics. According to the new theoretical model and the method for realizing the nondestructive characterization of the physical characteristics of the heterojunction by using the Kelvin probe microscope based on the theoretical model, the influence of the change of the Fermi level of the single-layer graphene and the interface state on the formation position of the contact potential difference is fully considered; key interface physical properties, especially built-in potential and depletion region characteristics which are crucial to device performance, can be accurately analyzed.

The invention relates to the technical field of digital-analog hybrid integrated circuit design, and particularly provides a FlexRay bus receiver with low noise and wide common-mode input range, which is characterized in that a common-mode voltage division module receives a differential signal output by a bus and carries out voltage division, and then a pre-amplification module carries out amplitude limiting amplification on the signal after voltage division; the hysteresis comparator module generates threshold hysteresis and generates a logic level signal based on the signal after amplitude limiting amplification, and the digital logic receiving module receives and processes the logic level signal, generates a receiving data signal and transmits the receiving data signal to an external controller. According to the invention, the differential signal pair received on the FlexRay bus is subjected to voltage division and amplitude limiting amplification, so that a wider common-mode input range is provided, the problem of large ground potential difference is solved, and the capability of suppressing common-mode noise and the communication stability are improved. Meanwhile, the hysteresis comparator module suppresses noise false triggering by generating threshold hysteresis, and the anti-noise capability of the receiver is remarkably improved.

The object of the present disclosure is to provide a piezoelectric device and the like capable of suppressing temperature unevenness in a piezoelectric layer during polarization of the piezoelectric device. A piezoelectric device having a capacitor structure in which a first electrode layer having two first electrode terminals, a piezoelectric layer, and a second electrode layer are laminated in this order, wherein the first electrode layer is Joule-heated by a potential difference between the two first electrode terminals, and the piezoelectric layer is polarized by an electric field generated by a potential difference between the first electrode layer and the second electrode layer while being heated by the Joule-heated first electrode layer.

A degradation determination device determines whether each of a first opening / closing device and a fuse provided on a power path is in a degraded state. The power path has a positive electrode-side power line and a negative electrode-side power line. The first opening / closing device and the fuse are provided on the negative electrode-side power line. The degradation determination device is provided with a first potential detection unit that detects a first potential at one end of the first opening / closing device and a second potential at the opposite end thereof, a second potential detection unit that detects a first potential at one end of the fuse and a second potential at the opposite end thereof, and a control unit that determines whether each of the first opening / closing device and the fuse is in a degraded state, based on a potential difference between the first and second potentials.

An image forming apparatus includes a controller which performs a continuation process in which a toner image is secondarily transferred to a back side of a sheet conveyed from a double side conveyance portion, when performing a double side print in a case in which a sheet of a feeding portion is not conveyed to a secondary transfer portion. The controller controls so that in a case of performing the continuation process, while an image formation area of the intermediary transfer belt passes through the secondary transfer portion, a predetermined voltage, which makes an outer roller be at a potential of a normal charge polarity side to an inner roller and makes an absolute value of the potential difference between the inner roller and the outer roller be less than a discharging threshold value, is applied to the secondary transfer portion.

The invention relates to the technical field of micro aircrafts, in particular to an atmospheric potential energy self-sustaining aircraft. Comprising a stator component provided with a positive electrode and a negative electrode which are distributed crosswise in the circumferential direction; a rotor member having a conductive sheet; the conducting strip can obtain charges from the positive electrode or the negative electrode of the stator part, so that the rotor part is driven to rotate; the rotor wing assembly is connected to the rotor component; the positive charge collecting part is electrically connected with the positive electrode and used for collecting positive charges in the atmosphere and supplying the positive charges to the positive electrode; and the grounding part is electrically connected with the negative electrode and is used for grounding the negative electrode. By arranging the positive charge collecting component and the grounding component, the aircraft can directly obtain electric energy from an atmospheric electric field, and the natural potential difference between the high altitude and the ground is used for driving the rotor component to rotate, so that continuous power is provided for the aircraft. The mode does not depend on a traditional storage battery or a solar cell, the problems that an existing micro aircraft is short in endurance time and limited by light conditions are solved, and cross-day and cross-night continuous flight can be achieved.

The invention provides a bidirectional bootstrap power supply circuit and method and a power switch device driven by self power supply. The circuit comprises a bidirectional power taking module, a first energy storage module and a second energy storage module. The bidirectional power taking module is connected between the first power supply end and the second power supply end; the first energy storage module and the second energy storage module respectively comprise a switching tube and an energy storage capacitor, the switching tube is connected between the bidirectional power taking module and the first end of the energy storage capacitor, the first end of the energy storage capacitor is connected with a power supply output end, the second end is connected with a power supply end, and the power supply output end supplies power to driving signals of the bidirectional switching power device; when a potential difference exists between the two power supply ends, the circuit takes power from the high-voltage end through the bidirectional power taking module, charges the corresponding energy storage capacitor by using the switch tube or the body diode thereof, and establishes a driving power supply voltage; when the power device is conducted and the potentials at the two ends are close, the electric energy is bidirectionally transferred between the two energy storage capacitors. An external isolation power supply can be omitted, the power supply architecture of the bidirectional power device is simplified, and the cost is reduced.

The utility model discloses an automatic switching device for a DC power supply, and the device comprises a main control module which is used for obtaining the potential difference of two DC buses at different sampling moments through a voltage detection module, and obtaining a target voltage according to the potential difference; and if it is monitored that the bus battery pack voltage of one section of direct-current bus is abnormal based on the target voltage, controlling a contactor to pull in so as to make the two sections of direct-current buses parallel, thereby using a normal power supply to supply power to the abnormal direct-current bus. According to the invention, a normal power supply is automatically and quickly used to replace an abnormal power supply to supply power to the DC bus with abnormal power supply, the current situation of passive and hysteresis operation of personnel is changed, uninterrupted power supply is realized, the power failure time is reduced, loss caused by power failure is avoided, the user experience is improved, and the application prospect is wide. According to the invention, automatic switching of the dual power supplies during fault, maintenance and operation mode adjustment is realized, the operation of operation and maintenance personnel on equipment is reduced, and the safety coefficient of operation is improved.

The invention provides a silicon substrate gallium nitride power semiconductor device and a preparation method thereof, and relates to the technical field of semiconductors. The device comprises a first silicon substrate layer, a second substrate layer, a substrate electrode and a gallium nitride device layer, the second substrate layer comprises a laminated structure which is periodically arranged; the laminated structure sequentially comprises a substrate functional layer and a second silicon substrate layer from bottom to top; wherein the first silicon substrate layer and the second silicon substrate layer adopt a first type of doping, and the substrate functional layer adopts a second type of doping, so that a bipolar doped substrate structure is formed. Based on this, when the silicon substrate gallium nitride power semiconductor device is in a high-voltage reverse bias state, at least one PN junction in the bipolar doped substrate structure can be in a reverse bias state due to the potential difference between the lower substrate electrode and the drain electrode of the silicon substrate gallium nitride power semiconductor device; and the breakdown voltage of the silicon substrate gallium nitride power semiconductor device in the vertical direction is further improved.

The present application relates to the technical field of leakage detection, in particular to a method and system for detecting leakage of an anti-seepage layer in the construction of an artificial wetland, which determines the seepage time period in which each electrode grid may produce seepage by analyzing the changes in the potential difference data and humidity data of the electrode grid below the anti-seepage layer; based on the seepage time period, analyzes the coincidence of liquid diffusion between different electrode grids, and divides the electrode grid into several diffusion regions; divides the diffusion regions into suspected damage regions and diffusion interaction regions, and analyzes the area relationship between the suspected damage regions and the diffusion interaction regions to obtain the seepage damage probability of the diffusion region corresponding to each electrode grid; and according to the seepage damage probability, marks the leakage point region. Through the present application, the region where the anti-seepage layer may be damaged and diffused can be more accurately positioned, the accuracy of identifying the specific position of the anti-seepage layer where leakage occurs is improved, and the credibility of the leakage detection result of the anti-seepage layer is further improved.

The invention relates to the technical field of tactile interaction, in particular to a virtual material interaction system with tactile feedback, which comprises a contact state sensing module, a potential gradient calculation module, a friction dynamic regulation and control module, a tactile feedback generation module and an interaction state monitoring module. According to the invention, dynamic mapping of contact pressure, sliding speed and node potential is realized through multi-source signal fusion, so that touch perception keeps continuous response in time sequence, potential difference calculation forms an electric field regulation basis for microscopic change of a material, and space-level adjustment of a surface friction coefficient is realized through charge redistribution and polarization direction switching. The tactile feedback changes adaptively according to material features, the friction spectrum is recombined into a multi-frequency-domain tactile signal after Fourier decomposition, texture, hardness and damping features of different materials are presented in a layered mode, the tactile feedback has more dynamic details and direction consistency, the sense of reality and the tactile recognition degree of virtual materials are improved, and the sense of reality and the sense of touch recognition degree of the virtual materials are improved. And stable and natural interaction touch in the virtual environment is ensured.

The invention discloses an automatic liquid supplementing device used in the TGV electroplating process and an electroplating system and method. The automatic liquid supplementing device comprises an electroplating cavity, an external tank body, a circulating system, a potential applying assembly, a conductivity sensor and a control module. The external tank body is divided into a left cavity (provided with a soluble anode) and a right cavity (communicated with the electroplating cavity) through an ionic membrane, and the cation concentration of the right cavity is the same as that of the electroplating cavity; the potential applying assembly can adjust the potential difference of the left and right chambers according to electroplating working conditions; the conductivity sensor detects the conductivity of the electroplating liquid in real time, the control module determines the cation consumption based on the conductivity, and the flow velocity and potential difference of the circulating system are adjusted in a closed-loop mode. According to the method, automatic, continuous and accurate supplement of positive ions is achieved through the synergistic effect of concentration difference diffusion and potential difference in combination with closed-loop control, the problems that in the prior art, manual supplement is tedious, concentration fluctuation is large, supplement lags behind and the like are solved, and the stability of the electroplating liquid, the TGV hole filling yield and the uniformity of a plating layer are effectively improved.

The invention provides a biosensor based on heterostructure double holes and a preparation method and application thereof. The device comprises a silicon nitride chip fixed between two electrolyte-filled liquid storage tanks, a layer of graphene film is transferred on the silicon nitride chip in advance, one nanopore is etched on a graphene interface, and the other nanopore is etched on a silicon nitride interface. The two side liquid pools are respectively connected with the positive electrode and the negative electrode of the patch clamp amplifier. When a certain potential difference is applied to the two electrodes, the biological macromolecules in the liquid pool can be captured into the nanometer channel. When two ends of a molecule are captured by two different nanopores at the same time, due to different interaction between a silicon nitride-graphene heterogeneous interface and the molecule and the action of electric field force, the molecule can form a dragsaw phenomenon between the two pores, and the time of the molecule passing through the nanopores is prolonged. According to the invention, the rate of chain molecules such as DNA, protein and the like passing through the nanopore can be regulated and controlled, and accurate control of single molecules and even gene sequencing can be realized.

A method for monitoring the state of a redox flow battery system that includes at least two battery modules connected in series. The method includes the following steps: S1: switching at least one battery module out of the series circuit; S2: discharging at least a partial volume of the electrolyte of the at least one battery module that was switched out of the series circuit in step S1, a potential difference being repeatedly detected, the potential difference being formed between a first potential of the negative electrolyte and a second potential of the positive electrolyte of the at least one battery module that was switched out of the circuit; S3: determining, from the potential difference values detected in step S2, the state of health of the at least one battery module that was switched out of the series circuit in step S1.

The invention provides an MEMS device and a preparation method thereof, and relates to the technical field of semiconductor devices. The MEMS device comprises a substrate layer and a functional layer arranged on the substrate layer, a through cavity is formed in the substrate layer, the functional layer comprises at least one piezoelectric layer and electrode layers arranged on the two sides of the piezoelectric layer respectively, a part of the functional layer is fixedly connected with the substrate layer, and a part of the functional layer is located on the through cavity; a metal layer is further arranged above the substrate layer, at least overlaps with a partial region of the substrate layer and extends along a current flowing path in the substrate layer. According to the MEMS device, the metal layer extending along the current flowing path is arranged above the substrate layer, so that the potential difference in the substrate layer is eliminated or reduced, the current in the substrate layer is eliminated or reduced, and the circuit loss tangent Tan delta is reduced.

The invention provides a pixel structure with a high-speed charge transfer characteristic and a method. The pixel structure comprises a photosensitive part, and the photosensitive part comprises a clamping photodiode PPD; the clamping photodiode PPD is of a comb-shaped structure, and the clamping photodiode PPD comprises comb teeth; comprising the following steps: setting modeling conditions; establishing mathematical models of different comb tooth widths, different comb tooth angles and the internal potential of the photosensitive area; and performing three-dimensional simulation by using a semiconductor device simulation tool SPECTRA. The invention has the beneficial effects that the internal potential difference is constructed through the comb tooth structure, so that the charge transfer speed is improved, the problem of incomplete charge transfer under high modulation frequency is solved, and the potential distribution can be flexibly optimized to match different modulation frequency requirements by adjusting the width, angle and number of the comb teeth; the method is compatible with an existing CMOS image sensor technology, an additional electrode is not needed to control potential change, and the pixel design complexity is reduced.

The invention provides a colorful Prussian blue film as well as a preparation method and application thereof. The preparation method comprises the following steps: placing a conductive material coated with a metal layer on the surface in a Prussian blue precursor solution, and growing a Prussian blue film layer on the surface of the metal layer in situ to obtain a Prussian blue film layer-metal layer-conductive material layer complex, namely the colorful Prussian blue film. The invention provides a colorful Prussian blue film which is characterized in that a metal layer is sputtered on the surface of conductive glass, on one hand, the problem of poor adhesion between Prussian blue and the conductive glass is solved, and on the other hand, Prussian blue grows on the surface of the metal layer in situ, so that a potential difference is formed between metal and iron ions, and the Prussian blue film is obtained. Further, prussian blue grows on the surface of the metal layer layer by layer, the multi-color film can be constructed by utilizing different thicknesses of the prussian blue layer, and the color of the multi-color film can be changed under the driving of voltage, so that the color gamut of the multi-color film is further enriched; the technical scheme provided by the invention has universality, and the preparation method is simple, low in cost and wide in application prospect.

The invention discloses a beam spot adjusting method and an electron accelerator, the electron accelerator comprises an anode potential adjusting device and an electron extraction device, a hot cathode of the electron accelerator is arranged on the electron extraction device, and the beam spot adjusting method comprises the following steps: acquiring physical parameters of an accelerating tube of the electron accelerator; calculating the beam waist position of the electron beam bunch according to the physical parameters of the accelerating tube; the control quantity of an anode potential adjusting device is obtained according to the girdling position; and adjusting the beam spot size of the outlet of the accelerating tube by using the control quantity. According to the invention, the extraction electric field distribution can be obtained, the purpose of controlling the beam envelope is achieved, so that the electron beam bunch safely arrives at the outlet of the electron accelerator, and the dynamic adjustment of the accelerator extraction outlet beam spot size within a certain range is realized by controlling the potential difference between the cathode and the anode.

The invention discloses a method for selectively separating valuable metals from a positive electrode material of a waste lithium battery, and belongs to the technical field of resource recycling of waste lithium ion batteries. The method comprises the following steps: preparing an aprotic deep eutectic solvent (DES) as a leaching agent and an electrolyte at the same time; the method comprises the following steps: adding a waste positive electrode material into DES, and leaching to obtain a DES leaching-electrolyte system; according to the method, the pulse voltage is applied in stages, selective separation of nickel, cobalt and manganese is achieved by controlling the pulse peak voltage (the first stage is-0.8 V to-1.0 V, the second stage is-1.0 V to-1.2 V, and the third stage is-1.2 V to-1.5 V), and the pulse frequency and the duty ratio are used for regulating and enhancing mass transfer and restraining side reactions. According to the method, the metal deposition potential difference is expanded through DES coordination regulation and control, efficient selective separation of nickel, cobalt and manganese is achieved in combination with pulse step-by-step voltage control, and the method has the advantages of being high in separation efficiency, few in side reaction, simplified in process, high in product purity and the like.

The present invention relates to a method of producing a carboxylic acid. A method of producing a carboxylic acid by reduction of carbon dioxide in the atmosphere includes a step of subjecting a hydrogen storage alloy negative electrode used in a nickel-hydrogen battery to a treatment in which the hydrogen storage alloy negative electrode is immersed in an alkaline electrolyte and then dried, and a step of applying a potential difference to a positive electrode used in the nickel-hydrogen battery and the hydrogen storage alloy negative electrode after the treatment, such that the potential of the positive electrode is higher than the potential of the hydrogen storage alloy negative electrode, in an electrolytic cell including an alkaline electrolyte configured to adsorb carbon dioxide, the positive electrode, the hydrogen storage alloy negative electrode after the treatment, and a power source connected to the positive electrode and the hydrogen storage alloy negative electrode, thereby reducing the carbon dioxide.

The application relates to the technical field of switching power supply, and discloses a bridge type low-stress passive soft switching boost power factor correction circuit, which comprises a direct current input power supply, a main power switching tube, an output filter capacitor and a coupling inductor comprising a primary side and a secondary side; a passive soft switching buffer network is connected to a main circuit of the circuit, the network comprises a diode full-bridge structure and a buffer capacitor, and the leakage inductance of the secondary side of the coupling inductor is connected between the midpoints of two bridge arms of the full-bridge structure; the application utilizes the ratio difference of the coupling inductor to generate a forward potential difference, drives the buffer capacitor to reversely charge to establish a negative voltage, and further provides a discharge circuit for the parasitic junction capacitance of the main power switching tube, so that zero voltage turn-on is realized, and high-frequency switching loss is reduced; meanwhile, the highest voltage stress of the semiconductor device is clamped in the range of the direct current output voltage through the potential restriction of the full-bridge network. The application does not need auxiliary active devices, and improves conversion efficiency and reliability while simplifying the system structure.

The application provides a battery shell short circuit processing method and system. The battery shell short circuit processing method comprises the following steps: when it is detected that the shell of the battery is short-circuited with the first pole of the battery, the shell is short-circuited with the second pole of the battery; if the first pole is the positive pole, the second pole is the negative pole; if the first pole is the negative pole, the second pole is the positive pole; the short circuit between the battery shell and the second pole is disconnected, and the battery is placed for a preset time length; after the battery is placed for the time length, the potential difference between the shell and the first pole is detected; and according to the potential difference between the shell and the first pole being within a preset range, the type of the short circuit between the shell and the first pole is determined and whether the short circuit is eliminated.

A potential difference between a first terminal and a second terminal of a light emitting element is maintained at a first value or more in a first measurement period, and is maintained at 0V or more and less than the first value in a third measurement period, a concentration of the measurement target gas is measured based on a second intensity of the light received by the light receiving element during a second measurement period which starts at a second timing that is later than a first timing at which the first measurement period starts and before a third timing at which the third measurement period starts and a fourth intensity of the light received by the light receiving element during a fourth measurement period which starts at a fourth timing that is later than the third timing and before a next occurrence of the first timing.

Embodiments of this disclosure are applied to the field of circuit control, and provide a level setting method and an electronic device. When determining that a keyboard is in an off state, an electronic device configures level statuses of all output pins in the keyboard to a first level, to avoid existence of a potential difference between an input pin and an output pin. When the keyboard is in an on state, the electronic device configures levels of all the output pins corresponding to keys on the keyboard to a second level or a third level. When the levels of the output pins are the second level or the third level, the keyboard can generate an interrupt properly when receiving a user's operation of pressing a key, so that the electronic device can determine, based on the interrupt, the key pressed by the user.

The present application relates to a kind of transformer winding and transformer for inhibiting inter-pie potential difference, comprising: first tap pie, including first knotted section and first continuous section connected with each other, and the turns of wire on first knotted section and first continuous section all include multiple turns;Second tap pie, including second knotted section and second continuous section connected with each other, and the turns of wire on second knotted section and second continuous section all include multiple turns;Wherein, the turns of wire of first continuous section and the turns of wire of second continuous section are adjacent number of turns continuous;First knotted section is connected with second knotted section, and the turns of wire of first knotted section and second knotted section are adjacent number of turns discontinuous.Above-mentioned transformer winding for inhibiting inter-pie potential difference, can be adjusted the number of turns of knotted section, to effectively inhibit the inter-pie potential difference of knotted winding.The method for improving the inter-pie potential difference distribution of knotted structure winding of traditional, effectively inhibits the inter-pie potential difference under the lightning impulse of winding, improves insulation reliability, easy to operate, will not increase production cost.

The invention provides a system and a method for removing charges in liquid medicine, which are applied to the technical field of semiconductors. According to the invention, a small-flow liquid medicine circulation pipeline is additionally arranged on a machine table pipeline at the front end of the liquid medicine nozzle, and the liquid medicine circulation pipeline is grounded, so that as long as one path is grounded, charges in the liquid medicine in all branches can be conducted away along the path; therefore, charges in all the liquid medicine in the machine pipeline can be conducted away, the problem that when the liquid medicine nozzle sprays liquid medicine to the surface of a wafer, instantaneous high potential difference is generated, arc discharge defects are formed, and a circuit fails is solved, and the reliability, the electrical performance and the yield of products are improved. In addition, the method is simple and efficient, and is suitable for various liquid medicines, so that the method has relatively high mass production applicability.

This invention relates to the field of bedrock interface detection technology for dams, and particularly to an electrical resistivity tomography (OTM) method for detecting the depth of the bedrock interface in dams. The method involves fixing the north pole (N) at infinity outside the survey area; fixing the bottom pole (B) at a first predetermined position on the initial survey line; moving the top pole (A) and bottom pole (M) at measurement points on each survey line according to a preset sequence to perform a first round of data acquisition in a first mode, obtaining the first potential difference and first current at each measurement point; fixing the bottom pole (B) at a second predetermined position on the final survey line; moving the top pole (A) and bottom pole (M) at measurement points on each survey line according to a preset sequence to perform a second round of data acquisition in the first mode, obtaining the second potential difference and second current at each measurement point; fusing the acquired data from each round to generate a combined dataset; inverting the combined dataset to reconstruct a three-dimensional model of the bedrock interface beneath the dam, thereby determining the bedrock interface depth. This invention is beneficial for improving detection resolution and accurately detecting the depth of the bedrock interface in dams.