1071 results about "Reference cell" patented technology

The present invention is a method, circuit and system for determining a reference voltage to be used in reading cells programmed to a given program state. Some embodiments of the present invention relate to a system, method and circuit for establishing a set of operating reference cells to be used in operating (e.g. reading) cells in a NVM block or array. As part of the present invention, at least a subset of cells of the NVM block or array may be read and the number of cells found at a given state associated with the array may be compared to one or more check sum values obtained during programming of the at least a subset of cells. A Read Verify threshold reference voltage associated with the given program state or associated with an adjacent state may be adjusted based on the result of the comparison.

The invention relates to methods for reporting on downlink timings by a mobile terminal in a mobile communication system. In order to allow for an aggregation access point to obtain information on propagation delay differences of downlink transmissions on aggregated serving cells, the invention suggests the mobile terminal to report timing information based on reception time difference information for a the target/reference cell. The mobile terminal performs measurements relating to transmission and/or reception time differences on the target/reference cell, and reports same to the eNodeB. The eNodeB compares the measurement result to a predefined maximum propagation delay time difference. Alternatively, the mobile terminal performs the measurements, compares same to the predefined maximum propagation delay time difference and then report the comparison result to the eNodeB.

A navigation system includes a display monitor, a CPU, and a camera, wherein the camera is mounted to a back side of the display monitor to form a monitor unit. One or more reference units are placed on a body while acquiring an image data set, and are tracked during a surgical operation by the monitor unit to register and correlate a position of a visual image of an exterior surface of the body with the image data set including information concerning internal structures of the body. The image data set is displayed on the display monitor superimposed in registration over the visible image of the exterior of the body with an angle of view and aperture in accordance with the actual position of the camera, whereby the display monitor displays the internal structures corresponding to the line-of-sight of the camera and the observer.

The present invention is a method, circuit and system for determining a reference voltage. Some embodiments of the present invention relate to a system, method and circuit for establishing a set of operating reference cells to be used in operating (e.g. reading) cells in an NVM block or array. As part of the present invention, at least a subset of cells of the NVM block or array may be read using each of two or more sets of test reference cells, where each set of test reference cells may generate or otherwise provide reference voltages at least slightly offset from each other set of test reference cells. For each set of test reference cells used to read at least a subset of the NVM block, a read error rate may be calculated or otherwise determined. A set of test reference cells associated with a relatively low read error rate may be selected as the set of operating reference cells to be used in operating (e.g. reading) other cells, outside the subset of cells, in the NVM block or array. In a further embodiment, the selected set of test reference cells may be used to establish an operating set of reference cells having reference voltages substantially equal to those of the selected test set.

A method for sensing a close to ground signal recieved from an array cell within a memory array includes the steps of providing a reference unit with a reference cell having a similar structure and a similar current path therethrough to that of the array cell, providing a timing unit with a timing cell having a similar structure and a similar current path therethrough to that of the array cell, discharging the array, the reference unit and the timing unit prior to charging them, generating a cell signal, a reference signal and a timing signal, respectively, upon charging, generating a read signal when the timing signal at least reaches a predefined voltage level and generating a sensing signal from the difference of the cell and reference signals once the read signal is generated. The reference unit has a reference capacitance which is a multiple of the expected capacitance of a bit line of the array and the timing unit has a predefined timing capacitance.

The present invention provides a dual reference cell sensing scheme for non-volatile memory. A high voltage reference cell and a low voltage reference cell are individually coupled to two sense amplifiers for providing two distinct reference voltages for comparison against the memory cell voltage. The output of the two sense amplifiers is further connected to a second stage sense amplifier to determine the status of the memory. The dual reference cell sensing scheme provides an increased sensing window which increases performance under low voltage application. The dual reference cell sensing scheme can be implemented by either voltage-based, current-based, or ground.

A semiconductor memory device having a plurality of cell arrays and one reference cell array according to the present invention includes a first current-to-voltage converting means that converts a cell current input from a cell array into a main cell voltage, a second current-to-voltage converting means that converts a reference cell current input from the reference cell array into a reference cell voltage, a global bit line that connects the first current-to-voltage converting means and the plurality of cell arrays, and a dummy global bit line that connects the second current-to-voltage converting means and the reference cell array, wherein the impedance of the global bit line is equal to the impedance of the dummy global bit line.

A method of determining a position in a wireless communication system and apparatus thereof are disclosed. The present invention includes receiving system information including information on a reference cell and at least one neighbor cell from a location server, receiving positioning reference signals (PRSs) from the reference cell and the at least one neighbor cell using the system information, measuring reference signal time difference (RSTD) of each of the at least one neighbor cell for the reference cell, and transmitting the at least one measured RSTD to the location server. And, the RSTD is a relative timing difference between two cells. Moreover, the system information includes at least one cell for obtaining a system frame number (SFN) by the UE, as the reference cell or the at least one neighbor cell.

Method and apparatus for providing real-time data indicative of the isotopic composition of formation fluids during drilling. The method includes the steps of: (a) providing a reference fluid having a known isotopic composition in a reference cell; (b) capturing a sample of formation; (c) providing at least one laser beam; (e) passing a beam through the reference fluid, measuring the reference-measurement beam before and after it passes through the reference fluid; (f) and passing a beam through the sample, measuring the beam before and after it passes through the sample, and calculating a first isotope concentration from those measurements. The measurements can provide information relating to the carbon isotopic composition of individual compounds in hydrocarbon gas mixtures, with the individual compounds including methane, ethane, propane, iso- or normal butane, or iso- or normal pentane.

A ferroelectric memory comprises a plurality of memory cells and circuitry to sense data thereof. Power supply decoupling circuitry may decouple supplies of the memory device during a portion of reading data. Additionally, ferroelectric domains of the memory cells may receive a series of polarization reversals to improve domain alignment and malleability. To drive reference cells of the memory with such polarization reversals, a multiplexer may be configured to swap a data bitline with a reference bitline so that reference cells may be accessed as regular data cells. While reading a ferroelectric memory, a self-timer circuit may monitor characteristics of the ferroelectric material and adjust an integration duration for a sense amplifier based on the monitored characteristics. A sampling-comparator may sample a signal related to the ferroelectric material at one instant, which may then be used subsequently thereafter by the self-timer circuit to influence an integration duration of the sense amplifier.

A method of radio link monitoring (RLM) and radio link failure (RLF) handling over a secondary serving cell (SCELL) is proposed. In a wireless network, a user equipment (UE) establishes a radio resource control (RRC) connection with a base station (eNB). The UE applies carrier aggregation for multiple component carriers (CCs) configured as multiple serving cells. The UE performs radio link monitoring over a primary serving cell (PCELL). The UE also performs radio link monitoring over a secondary serving cell (SCELL). The SCELL belongs to a CC group of one or more CCs, and used as a reference cell for the CC group. When SCELL performance is below pre-defined criteria, the UE and the eNB apply certain actions over the SCELL or all CCs in the CC group. The proposed SCELL RLM/RLF handling prevents spurious and uncontrollable uplink SCELL transmission and interference to other UEs.

A high-speed current sense amplifier has complementary reference cells and load devices that eliminate capacitive mismatch contributions. The current sense amplifier includes a voltage comparator, a first clamping device coupled between a first input of the voltage comparator and a first input signal node. The first clamping device is coupled to a reference voltage. A second clamping device is coupled between the second input of the voltage comparator and a second input signal node. The second clamping device is also coupled to the reference voltage. A current mirror is coupled between the first and second input of the voltage comparator and is coupled to an active capacitance balancing circuit. The active capacitance balancing circuit may be combined with the voltage comparator. Equalization devices may be coupled between the first and second inputs of the voltage comparator, and between the first input signal node and the second input signal node.

A semiconductor memory device including a memory cell array and a sense amplifier, wherein the memory cell array includes: a plurality of information cells, in each of which either one of multi-level data is written; a first reference cell with the same structure and the same connection state as the information cell, in which a reference data level is written for generating a first reference current; and a second reference cell, which serves for generating a second reference current used for setting the lowest data level of the multi-level data and for setting the reference data level of the first reference cell.

The present invention provides methods and structures for improving refresh power efficiency of dynamic random access memory devices. By measuring charge retention properties of reference cells that have substantially the same structures as normal DRAM memory cells, the refresh rate of DRAM devices can be adjusted with better reliability. The reliability is further improved by using ECC circuits and/or field programmable redundancy circuits.

A wireless communication device for enhancing a data rate for a packet-switched (PS) data service is provided. The device comprises a processor configured to reference cell information corresponding to a first subscriber identity card to maintain mobility for a second subscriber identity card by using the referenced cell information when performing the PS data service with a first service network for the first subscriber identity card.

The present invention provides a method and apparatus for estimating a property of a fluid downhole by exposing the fluid to modulated light downhole and sensing changes in intensity of infrared radiation from the downhole fluid to estimate the property of the downhole fluid. The present invention senses changes in intensity of light by converting the changes to transient changes in temperature of a detector, such as a pyroelectric detector. The present invention performs spectroscopic analysis of fluids by optically filtering the light allowed to impinge on a pyroelectric detector, converting the changes in temperature of the pyroelectric detector to a signal and converting the signal to estimate the property of the downhole fluid. The light source is modulated by mechanically chopping the beam or by electrically pulsing the light source or by steering the beam between different path lengths of sample or between a reference cell (filled with a reference fluid or empty) and a sample-filled cell.