173 results about "Reference cell" patented technology

The invention provides a QLC NAND interference compensation control method and system, and the method comprises the steps: collecting adjacent unit voltage offset data of a target storage unit through an on-chip reference unit array integrated on a QLC NAND flash memory chip; performing feature extraction on the data to obtain interference feature parameters including at least one of voltage drift amplitude, drift rate and drift fluctuation frequency, and inputting the interference feature parameters into a pre-trained lightweight decision tree model to output an interference trend prediction result, a programming parameter optimization strategy is generated based on the result, the pulse width and the step voltage increment are optimized, meanwhile, fine adjustment of model parameters is triggered by collecting programming verification data after each time of optimization, dynamic accurate compensation of memory cell interference under the high write-in load of the QLC NAND flash memory is achieved, programming voltage drift is effectively restrained, and the reliability of the QLC NAND flash memory is improved. The adaptive capacity of the writing algorithm is improved, and the overall service life of the flash memory is prolonged.

The invention discloses a method for detecting the concentration of vanadium ions in an electrolyte of an all-vanadium redox flow battery, and relates to the technical field of batteries. The method for detecting the concentration of vanadium ions in the electrolyte of the all-vanadium redox flow battery comprises the following steps: preparing trivalent and tetravalent vanadium ion reference solutions and trivalent and tetravalent vanadium ion standard solutions with different concentrations; performing baseline correction by using a high-concentration reference solution, setting an absorbance difference value between a corresponding reference cell and a sample cell as 0, and obtaining a trivalent vanadium ion standard curve and a tetravalent vanadium ion standard curve by using standard solutions with different concentration gradients; and detecting the absorbance difference value of the electrolyte stock solution to be detected, and substituting the absorbance difference value into the corresponding standard curve to calculate the vanadium ion concentration. According to the present invention, the detection can be performed without diluting the electrolyte stock solution during the detection, the interference of the adjacent valence vanadium ions is not easily generated, and the detection result is accurate.

The invention relates to the technical field of hydrogen detection, in particular to a hydrogen detection and measured value correction method based on a hydrogen sensor, and the method comprises the following steps: analyzing the change trend of voltage data in an active unit at each moment and in a preset duration before the moment, and the correlation of the voltage data between the active unit and a reference unit; determining hydrogen purity responsivity; the hydrogen compensation confidence coefficient is determined by analyzing the change trend of the hydrogen purity responsivity at each moment and all moments in a previous preset time period and the average distribution and dispersion degree of the hydrogen purity responsivity, so that the hydrogen concentration at each moment is corrected. According to the invention, the influence of cross interference of other combustible gases except hydrogen and baseline drift of the hydrogen sensor on hydrogen detection and concentration measurement is solved, and the long-term stability of hydrogen concentration monitoring and the accuracy and reliability of a measurement result are improved.

A method performed by a WTRU may comprise: receiving first configuration information, including multi-cell duplexing configuration information, wherein the multi-cell duplexing configuration information indicates a first reference cell and a linked cell, wherein the first reference cell is included in a set of one or more reference cells; receiving, from a network, second configuration information comprising an inter-cell frequency gap threshold and information associated with the set of one or more reference cells; on a condition that a frequency gap between the reference cell and the linked cell is less than the inter-cell frequency gap threshold, determining, based on the received second configuration information, a SBFD configuration for the linked cell; and applying, to the linked cell, the determined SBFD configuration.

Techniques and apparatus for determining dynamic current mismatches in a current-steering digital-to-analog converter (DAC) are provided. One example technique generally includes accumulating current mismatches between a DAC cell of a plurality of DAC cells and a reference cell using a capacitive element and changing a polarity of the capacitive element during the accumulating. The timing of the accumulating may be controlled such that a static current mismatch between the DAC cell and the reference cell is at least reduced and a dynamic current mismatch between the DAC cell and the reference cell is enhanced.

Discussed is a system for managing a state of a battery, the system including: a user terminal to set location information about a location at which the battery is stored and output the set location information; a battery information obtaining device connected to the battery and to obtain battery information including at least one of voltage, SOC, and SOH of the battery and output the obtained battery information; and a performance detecting device connected to the user terminal to receive the set location information, connected to the battery information obtaining device to receive the obtained battery information, and to determine a target location at which the battery is stored, obtain environment information of the determined target location, set reference state information of at least one reference cell stored around the determined target location, and detect performance of the battery.

Various aspects of the present disclosure relate to carrier phase measurement using reference frequency and reference time. An apparatus, such as a user equipment (UE), receives signaling comprising one or more reference symbols of one or more transmission-reception points (TRPs). The UE transmits signaling comprising a carrier phase measurement generated based at least in part on a carrier phase of the one or more reference symbols relative to a carrier phase of a reference cell of the UE at a reference frequency and a reference time within a measurement time window.

A memory device is provided. The memory device includes a nonvolatile memory including a memory cell array, and a controller configured to control the nonvolatile memory. The memory cell array includes: a memory cell including a first magnetic tunnel junction element, an OTP (One-Time-Programmable) cell including a second magnetic tunnel junction element, and a reference cell connected to a first reference resistor for reading data for the memory cell or a second reference resistor for reading data from the OTP cell, wherein the controller is configured to set the second reference resistance, based on a first edge resistance value detected from a resistance distribution of OTP cells comprising the OTP cell or based on the first reference resistance.

A storage array, a memory, a reading method thereof, and an electronic device are disclosed. The storage array includes multiple storage cell subarrays, a reference cell column, and a set of reference voltage generation circuits, reference cell switching circuits, and read word line control circuits. The storage cell subarrays and reference cell column in two storage arrays are electrically connected via read bit lines and symmetrically distributed around a read decision unit. The transistors of the reference cells and storage cells are isomorphic and have the same circuit structure. The memory includes at least one pair of open storage arrays, each pair comprising a first storage array, a second storage array, and a set of read decision units. Each storage array is electrically connected to one of the two input terminals of the read decision unit. During reading, the two storage arrays provide a read voltage and a reference voltage, respectively. The two input terminals of the read decision unit have similar RC parameters, and the drift generated by the voltages at the two input terminals is also matched. This application improves storage density and data reading reliability.

The application relates to the technical field of a vanadium redox flow battery, in particular to a circular structure reference battery for monitoring electrode potential, which comprises an electrochemical unit and two circular units. The electrochemical unit comprises a proton exchange membrane and electrode assemblies symmetrically arranged on two sides of the proton exchange membrane; the two circular units are symmetrically arranged on the two sides of the proton exchange membrane, a closed electrode cavity is formed between the circular unit and the proton exchange membrane, the electrode assemblies are arranged in the electrode cavity, a plurality of liquid inlet hole groups uniformly distributed in the circumferential direction are arranged on the circular unit, the plurality of liquid inlet hole groups are communicated with the circumferential edge of the electrode cavity; a liquid outlet assembly is arranged on the circular unit, the liquid outlet assembly is communicated with the central area of the electrode cavity, one end of the liquid outlet assembly extends out of the circular unit, electrolyte enters from the circumferential edge area of the electrode cavity through the plurality of liquid inlet hole groups, flows radially to the central area of the electrode cavity, and then flows out from the liquid outlet assembly. The application has the effects of providing a uniform flow field and ensuring stable and reliable signals.

The present disclosure provides a memory device, comprising: a sensing unit, a memory cell electrically connected to a first input terminal of the sensing unit, and a reference cell electrically connected to a second input terminal of the sensing unit, wherein the reference cell comprises a reference resistor, and a temperature coefficient of a resistive material of the reference resistor is less than -1000 ppm / °C. According to the present disclosure, a resistance value of the reference cell decreases as a resistance value of the memory cell decreases, which serves the function of adjusting a voltage and current of a read operation, so as to maintain a read window of the memory device within an appropriate range, thereby preventing the problem of a limited read window due to the resistance value of the memory cell decreasing as the temperature increases, achieving an optimal read window, solving the problem in the prior art where the reference resistance of the memory device affects the read window, and further improving the read accuracy of stored information.

A battery status management system, according to an embodiment of the present invention, comprises: a user terminal configured to establish position information about the position in which a battery is stored and to output the established position information; a battery information acquisition device configured to connect to the battery, acquire battery information that includes at least one of the following values: battery voltage, SOC and SOH, and output the acquired battery information;and a performance detection device configured to connect to the user terminal to receive the established position information and connected to the battery information acquisition device to receive battery information, determine, based on the received position information, a target position where the battery is stored, acquire environmental information about the determined target position, establish baseline state information about one or more reference cells stored around the determined target position, and detect battery performance based on at least one of the following values: the received battery information, the acquired environmental information, and the established baseline state information.

Capacitance-to-digital converters, methods, and systems are provided. Apparatuses and methods of capacitance-to-digital code conversion are described. An apparatus includes a bridge circuit and a modulator front-end circuit. The bridge circuit includes a first terminal coupled to a reference cell and a second terminal coupled to a sensor cell. The modulator front-end circuit includes a comparator coupled to the bridge circuit, a first modulation capacitor coupled to a first input of the comparator, and a second modulation capacitor coupled to a second input of the comparator. The modulator front-end circuit provides a digital bit stream. A duty cycle of the digital bit stream is representative of a ratio between a capacitance of the sensor cell and a reference capacitance of the reference cell.

The present disclosure describes methods, system, and devices for handling direction collision in carrier aggregation (CA). One method includes determining, by a user equipment (UE), a cell type of a cell in multiple serving cells in carrier aggregation; in response to the cell type of the cell being configured as a specific cell type, determining, by the UE, a reference cell in the multiple serving cells; and, in response to a direction collision happening on the multiple serving cells, performing, by the UE, a direction collision handling in the multiple serving cells according to a link direction of the reference cell.

A control method for a non-volatile memory is provided. After the non-volatile memory is enabled, a judging step is performed to judge whether the non-volatile memory enters a read mode, a program mode or an erase mode. If the judging result indicates that the non-volatile memory enters the read mode, the program mode or the erase mode, a worst threshold voltage of plural reference cells of the non-volatile memory is searched. Then, at least one of a control voltage for read action, a control voltage for program verify and a control voltage for erase verify is determined. Then, a read action, a program action or an erase action is performed on plural data cells of the non-volatile memory.

A fluorimeter reference cell which comprises a first material which emits an absorption spectrum when an excitation light is incident upon the first material. The absorption spectrum has a defined cha

The application discloses a reference cell module of a non-volatile memory and a reference cell repair method. The reference cell repair method comprises: performing first reference cell repair in a wafer test stage; and performing second reference cell repair in a package test stage. The reference cell module of the non-volatile memory comprises a first subarray and a second subarray, and the reference cell repair comprises forming an address mapping between a first reference cell of the first subarray with defects and a second reference cell of the second subarray without defects and with the same threshold voltage. In the wafer test stage and the package test stage, the first reference cell with defects is repaired, so that the chip yield is improved.

An information processing device (1) includes at least one processor, the at least one processor carrying out: an acquisition process for acquiring first spatial information indicating a reference cell serving as a cell in which a user is located in a virtual space, second spatial information indicating the virtual space located around the reference cell, and third spatial information indicating the virtual space located more distantly than a peripheral cell; and a spatial information process including a first process in which the first spatial information is used, a second process in which the second spatial information is used, and a third process in which the third spatial information is used and which involves a smaller processing load than the second process.

The invention provides a short-circuit detection method and device, a short-circuit detection model training method and device, a medium and equipment. The short-circuit detection method comprises the following steps: acquiring a voltage set of each battery cell in a battery pack in a specified time period; determining the battery cell with the maximum average voltage value in the voltage set in the battery pack as a reference battery cell; determining a dynamic time regular distance between the sub-voltage set of the corresponding time interval of the reference battery cell and the sub-voltage set of the corresponding time interval of each battery cell to obtain a plurality of first regular distances; determining the first regular distance of the battery cell corresponding to each time interval as a distance set corresponding to the battery cell, and calculating a characteristic parameter of the distance set corresponding to the battery cell; each characteristic parameter is input into the short circuit detection model, a detection result is obtained, and the detection result represents the target battery cell with the internal short circuit in the battery pack. The short circuit detection accuracy can be improved.

The invention discloses a dynamic threshold CFAR detection method based on manifold curvature and KL divergence fusion, and belongs to the technical field of radar target detection. Aiming at the problems of separation point estimation deviation, threshold value inconsistency and reference unit pollution existing in target detection in a non-stationary clutter environment, manifold curvature-driven regularization is adopted to carry out segmentation point estimation, and clutter edge geometric features are quantified to correct the deviation. According to the method, a dynamic threshold response function is constructed through fusion of manifold curvature and KL divergence, and scene adaptive threshold adjustment is realized. In conclusion, the method effectively adapts to non-stationary clutter power fluctuation, enhances the robustness of target detection in a complex electromagnetic environment, and is suitable for radar target detection in the fields of ocean surveillance and the like.

PUCCH carrier switching at a UE may include decoding an RRC configuration including a time-domain pattern indicating a reference cell and a target PUCCH cell for one or more PUCCH transmissions at a given point in time. The reference cell may include a reference cell slot numerology and the target PUCCH cell may include a target PUCCH cell slot numerology. A slot for PUCCH transmissions may be determined based on the reference cell slot numerology, The determined slot may be used for transmission of at least one of an SR, a CSI, and a HARQ-ACK. The determined slot of the reference cell may be mapped to a corresponding slot of the target PUCCH cell. A PUCCH resource may be determined for performing a PUCCH transmission using the corresponding slot of the target PUCCH cell. The PUCCH resource determination may be based on a PUCCH configuration of the target PUCCH cell.

The application discloses a kind of training of cell feature extraction model, cell feature extraction method and device, belong to biological technology field.Method includes: obtaining reference cell graph, the node of reference cell graph is characterized the material group data of sample cell, the edge of reference cell graph is characterized the correlation of the sample cell corresponding to both ends node;Data enhancement is carried out to reference cell graph to obtain first cell graph and second cell graph;The first feature of each sample cell, second feature is obtained by neural network model to first cell graph, second cell graph is carried out feature extraction;Based on the first feature and second feature of each sample cell, neural network model is trained to obtain cell feature extraction model.Because the accuracy of the first feature and second feature of sample cell is higher, and eliminate noise to a certain extent, therefore, the cell feature extraction model obtained based on the first feature and second feature of sample cell can extract accurate cell feature, and have certain anti-noise performance.

The present disclosure relates to a cell determination method, a device, a communication device and a storage medium, wherein the cell determination method comprises: determining at least one cell set corresponding to downlink control information used for scheduling a plurality of cells; and determining, for each first cell set in the at least one cell set, a reference cell in the first cell set, wherein the blind detection resource occupied by the downlink control information used for scheduling the plurality of cells when scheduling the cells in the first cell set is determined on the reference cell in the first cell set. According to the present disclosure, since the cells contained in the first cell set can have scheduling cells and scheduled cells, the reference cell in the first cell set is not limited to the scheduling cells, but can include the scheduled cells, so that the blind detection resource occupied by the downlink control information used for scheduling the plurality of cells can be determined on the scheduled cells. Accordingly, the blind detection efficiency and performance of the terminal for the downlink control information can be improved.

Disclosed is a memory device which includes a plurality of memory cells, word lines electrically connected to rows of the plurality of memory cells, and bit lines and source lines electrically connected with columns of the plurality of memory cells. The plurality of memory cells include main memory cells of a main cell area that are configured to support a read operation and a write operation, and one time program cells of a one time program (OTP) cell area that are configured to support the write operation once and a one time program reference cell for the read operation of the one time program cells. Each of the main memory cells is electrically connected to a respective word line, and each of the one time program cells is electrically connected to at least two respective word lines of the word lines.

A method for a user equipment (UE) is provided. The method includes determining a first time period for the UE based on whether the UE uses discontinuous reception (DRX) and whether the UE uses measurement gaps (MGs). The first time period indicates respective timing criteria for the UE to determine a time period for which to maintain an available downlink timing for a reference cell. The method also includes determining a first time threshold for the UE to determine reference cell availability based on the first time period.

A drone navigation method based on optical distortion and a drone using the same are provided. The method includes: capturing images of an environment using a drone's camera with high optical distortion properties; detecting a reference object and reference lines in the images; determining cells formed by the reference lines and monitoring curvatures of the lines; determining a reference cell adjacent to the drone; determining the drone's projected position in the reference cell based on curvatures of cell boundaries; determining a target motion direction according to a navigation task and controlling the drone's motion; and continuously updating the drone's projected position based on monitored boundary curvatures to manage the drone's motion. This method enables precise indoor navigation without relying on GPS or external markers, significantly enhancing drone operability in complex indoor environments such as warehouses and industrial facilities.

The present disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate beyond a 4G communication system such as LTE, and proposes a method and a device, the method comprising the steps of: receiving, from a base station, system information including time division duplex (TDD) frequency information including a TDD uplink and a TDD downlink; receiving, from the base station of a radio resource control (RRC)-connected serving cell, configuration information regarding cell measurement on a radio resource identified on the basis of the TDD frequency information; and transmitting, to the base station, a measurement report regarding the serving cell on the basis of the configuration information, wherein the serving cell includes a reference cell, and the reference cell includes a special cell (spCell) and another serving cell other than the spCell.

An apparatus and a method for diagnosing a battery cell. The apparatus may include a reference cell module including at least one reference cell composed of a super-capacitor, a measuring device configured to measure a reference impedance of the reference cell and a battery impedance of the battery cell, and a processor configured to compare the battery impedance with the reference impedance to determine whether there is an abnormality in the battery cell.

This application provides an energy saving management method and apparatus. The method includes: obtaining information about reference cells of a first cell, where the reference cells include reference cells of at least two levels, a coverage area of a first-level reference cell overlaps a coverage area of the first cell, a coverage area of a second-level reference cell overlaps the coverage area of the first-level reference cell, and the coverage area of the second-level reference cell does not overlap the coverage area of the first cell; and determining, based on the information about the reference cells, whether energy saving processing needs to be performed on the first cell.

A resistive-type memory device comprises at least one memory array. Each memory array includes reference cells and a reference generator that generates a reference voltage that is midway between a first voltage and a second voltage, the first voltage being a function of a first current through a first reference cell, the second voltage being a function of a second current through a second reference cell, the first reference cell and the second reference cell being a pair of reference cells storing complementary values in a row of the memory array. The reference voltage is thus automatically centered and tracks the variation in a read current for all PVT corners without the need of tuning and adjustment of the reference voltage. This reference generator works with a current sense amplifier in certain implementation examples to reliably output the correct read data for all PVT corners.