8636 results about "Chemical physics" patented technology

Apparatus and method for atomic layer deposition on a surface of a substrate (6) in a treatment space. A gas supply device (15, 16) is present for providing various gas mixtures to the treatment space (1, 2). The gas supply device (15, 16) is arranged to provide a gas mixture with a precursor material to the treatment space for allowing reactive surface sites to react with precursor material molecules to give a surface covered by a monolayer of precursor molecules attached via the reactive sites to the surface of the substrate. Subsequently, a gas mixture comprising a reactive agent capable to convert the attached precursor molecules to active precursor sites is provided. A plasma generator (10) is present for generating an atmospheric pressure plasma in the gas mixture comprising the reactive agent, the plasma generator being arranged remote from the treatment space (1, 2).

A method and system is described for reducing particle contamination in a vapor distribution system. The vapor distribution system comprises a housing and a vapor distribution head comprising a plurality of openings configured to introduce a film precursor vapor to a deposition system. The housing and vapor distribution head define a plenum coupled to a film precursor evaporation system, and configured to receive the film precursor vapor from the evaporation system and distribute the film precursor vapor within the deposition system through the plurality of openings. In order to reduce particle contamination, the vapor distribution system is designed to reduce the difference, or ratio, between the pressure in the plenum and the pressure in the deposition system. For example, the plenum pressure can be less than twice the pressure in the process space, or can be less than 50 mTorr, 30 mTorr or even 20 mTorr than the pressure in the process space.

A method for forming a dielectric film in a trench on a substrate by plasma-enhanced atomic layer deposition (PEALD) performs one or more process cycles, each process cycle including: (i) feeding a silicon-containing precursor in a pulse; (ii) supplying a hydrogen-containing reactant gas at a flow rate of more than about 30 sccm but less than about 800 sccm in the absence of nitrogen-containing gas; (iii) supplying a noble gas to the reaction space; and (iv) applying RF power in the presence of the reactant gas and the noble gas and in the absence of any precursor in the reaction space, to form a monolayer constituting a dielectric film on a substrate at a growth rate of less than one atomic layer thickness per cycle.

The present invention relates to droplet-based particle sorting. According to one embodiment, a droplet microactuator is provided and includes: (a) a suspension of particles; and (b) electrodes arranged for conducting droplet operations using droplets comprising particles. A method of transporting a particle is also provided, wherein the method includes providing a droplet comprising the particle and transporting the droplet on a droplet microactuator.

A method for depositing a film by plasma-enhanced subatmospheric-pressure atomic layer deposition (subatmospheric PEALD) is conducted using capacitively coupled parallel plate electrodes with a gap of 1 mm to 5 mm, wherein one cycle of subatmospheric PEALD includes: supplying a precursor in a pulse to the reaction chamber; continuously supplying a reactant to the reaction chamber; continuously supplying an inert gas to the reaction chamber; continuously controlling a pressure of the reaction chamber in a range of 15 kPa to 80 kPa; and applying RF power for glow discharge in a pulse to one of the parallel plate electrodes.

A method for forming a SiN or SiCN film in a trench on a substrate by plasma-enhanced atomic layer deposition (PEALD) conducts one or more process cycles, each process cycle including: (i) feeding a precursor in a pulse to a reaction space where the substrate is place, said precursor having a Si—N—Si bond in its skeletal structure to which at least one halogen group is attached; and (ii) applying RF power to the reaction space in the presence of a reactant gas and in the absence of any precursor to form a monolayer constituting a SiN or SiCN film.

Specific ionic interactions with a sensing material that is electrically coupled with the floating gate of a floating gate-based ion sensitive field effect transistor (FGISFET) may be used to sense a target material. For example, an FGISFET can use (e.g., previously demonstrated) ionic interaction-based sensing techniques with the floating gate of floating gate field effect transistors. The floating gate can serves as a probe and an interface to convert chemical and/or biological signals to electrical signals, which can be measured by monitoring the change in the device's threshold voltage, V_T.

Apparatus and method for generating ruthenium tetraoxide in situ for use in vapor deposition, e.g., atomic layer deposition (ALD), of ruthenium-containing films on microelectronic device substrates. The ruthenium tetraoxide can be generated on demand by reaction of ruthenium or ruthenium dioxide with an oxic gas such as oxygen or ozone. In one implementation, ruthenium tetraoxide thus generated is utilized with a strontium organometallic precursor for atomic layer deposition of strontium ruthenate films of extremely high smoothness and purity.

An Atomic Layer CVD process and apparatus deposits single and or multiple minelayers of material sequentially at atmospheric pressure. Sequential monolayer depositions are separated in time and in space by combinations of physical barriers and/or gas curtains and/or by physical movement of substrates from one deposition chamber or location to another Pulse and/or continuous flows of reactant and purge gases are used in alternate embodiments of the present invention. Reactant injection, purge gas flow and exhaust flows at separated deposition chambers or locations are controlled by coordination of dedicated gas manifolds and control systems for each spatially or temporally separated deposition process or location.

Methods are provided for producing a molecular array comprising a plurality of molecules immobilized to a solid substrate at a density which allows individual immobilized molecules to be individually resolved, wherein each individual molecule in the array is spatially addressable and the identity of each molecule is known or determined prior to immobilisation. The use of spatially addressable low density molecular arrays in single molecule detection techniques is also provided.

The present invention is generally related to systems and methods for producing a plurality of droplets. The droplets may contain varying species, e.g., for use as a library. In some cases, the fluidic droplets may be rigidified to form rigidified droplets (e.g., gel droplets). In certain embodiments, the droplets may undergo a phase change (e.g., from rigidified droplets to fluidized droplets), as discussed more herein. In some cases, a species may be added internally to a droplet by exposing the droplet to a fluid comprising a plurality of species.

The present invention generally relates to systems and methods to create stable emulsions with low rates of exchange of molecules between microdroplets.

The present invention pertains to a system for processing semiconductor wafers. The processing may involve the removal of material from the wafers or deposition of material on the wafers. Various aspects of the invention include specialized pressurization, process vessel, recirculation, chemical addition, depressurization, and recapture-recycle subsystems. A solvent delivery mechanism can convert a liquid-state sub-critical solution to a supercritical processing solution and introduce it into a process vessel that contains a batch of wafers. The wafers may be rotated within the supercritical processing solution. The supercritical processing solution is preferably recirculated through the process vessel by a recirculation system. When chemical additives are added to a supercritical solvent, the momentum of the chemical additives are preferably matched to the momentum of the supercritical solvent. Additives may be added at a higher initial flow rate, then ramped down a lower flow rate, e.g., a steady-state flow rate.

Use of a pH sensor comprising an ion-sensitive field effect transistor (ISFET) to perform real time detection/quantification of nucleic acid amplification, e.g. polymerase chain reaction (PCR) nucleic acid amplification, based on detection of protons released during the primer extension phase.

Space and time co-divided atomic layer deposition (ALD) apparatuses and methods are provided. Substrates are moved (e.g., rotated) among multiple reaction zones, each of which is exposed to only one ALD reactant. At the same time, reactants are pulsed in each reaction zone, with purging or other gas removal methods between pulses. Separate exhaust passages for each reactant and purging during wafer movement minimizes particle contamination. Additionally, preferred embodiments permit different pulsing times in each reaction space, thus permitting flexibility in pulsing.

Provided herein is a conditioning apparatus that includes a geometrical configuration having an inlet flow deceleration conduit and a cyclonic tube to effectuate both liquid-gas separation and droplet coalescence. The apparatus is typically positioned at the inlet of a separator vessel used for removing water and gas from extracted crude oil containing entrained water and gas. The apparatus promotes droplet coalescence and gas separation for mixed fluids flowing into an existing water and oil separation device.

A unitary humidity exchange cell (HUX) is dislosed that includes at least one composite membrane, disposed between at least one first chamber for flow of the first fluid therethrough and at least one second chamber for flow of the second fluid therethrough. The composite membrane include an at least partially sulfonated humidity-conducting polymer comprising residues derived from at least one arylvinyl monomer; and a reinforcing substrate bonded thereto. The product finds utility in a variety of physical and chemical processes and products whereby moisture or other highly polar liquid or gas transfer, exchange removal or delivery is important. A notable application is the Membrane Energy Recovery Ventilator (MERV) in which both heat, ions and moisture is transferred between two air streams, one intake and one exhaust, from an air-conditioned building.