524 results about "Vapor phase" patented technology

Systems and methods for providing lubrication to a gas turbine engine are described. An example gas turbine engine includes a plurality of bearings disposed along an axial length of a rotatable shaft to provide rotational support between a static structure and at least one of a compressor and a turbine of the gas turbine engine. The gas turbine engine further includes a fuel system operable to deliver a mixture of fuel and lubricant sequentially to at least one of the plurality of bearings and the combustor so that during operation of the gas turbine engine, at least the lubricant within the mixture is in a liquid phase prior to being received by the at least one of the plurality of bearings, and in a vapor phase once the lubricant is delivered to the at least one of the plurality of bearings.

The invention belongs to the technical field of lithium ion batteries, and particularly relates to a preparation method of a graded ordered silicon-carbon negative electrode material for a lithium ion battery, which comprises the following steps: (S1) mixing phenolic resin and a template agent, calcining, and etching to obtain porous carbon containing macropores; (S2) carrying out cracking and carbon coating on the silicon source gas to obtain nano crystalline silicon containing a carbon coating layer; (S3) mixing the porous carbon with the nano crystalline silicon containing the carbon coating layer, and then carrying out ultrasonic vibration, so that macropores of the porous carbon are filled with the nano crystalline silicon to obtain a silicon-carbon composite material I; (S4) treating the silicon-carbon composite material I by using a carbon-containing sealing agent, and then activating to obtain a silicon-carbon composite material II; and (S5) carrying out vapor phase silicon deposition on the silicon-carbon composite material II to fill the amorphous silicon in the pores of the porous carbon, and then carrying out carbon coating to obtain the graded ordered silicon-carbon negative electrode material. The silicon-carbon negative electrode material prepared by the invention is of a composite structure in which crystalline silicon and amorphous silicon are spatially and orderly distributed, so that the structural stability and the uniform distribution of silicon are realized.

The invention discloses a preparation method of a high-purity ultra-clean hydroxylamine aqueous solution. A four-stage purification process comprises the following steps: 1) low-temperature chelation-ceramic membrane metal removal; 2) molecular sieve membrane rectification decomposition prevention; 3) pulse electrodialysis reversal deep desalination; and 4) gradient filtration terminal refining. According to the preparation method of the high-purity ultra-clean hydroxylamine aqueous solution, a low-temperature molecular sieve membrane rectification technology is adopted, hydroxylamine liquid-phase thermal decomposition is avoided through a vapor phase separation mechanism, and the decomposition rate is reduced to 1t from 15% of a traditional process; the method comprises the following steps of: removing metal through chelation-electrodialysis synergistically, ensuring that Fe and Cu ion residues are less than or equal to 0.05 ppb through a thiosemicarbazide-bipolar membrane system, ensuring the nitrogen environment in the whole process, ensuring that the dissolved oxygen is less than or equal to 5ppb, replacing liquid phase distillation with molecular sieve membrane vapor phase separation, solving hydroxylamine liquid phase thermal decomposition, and breaking through the trace metal removal limit by combining thiosemicarbazide-bipolar membrane synergistically removing impurities. And then through nanoscale terminal filtration, the metal / particle control reaches ppb-level limit which is superior to the SEMI standard, and double spanning of quality and cost is realized.

A process for forming a vapor-deposited ZIF-8 metal organic framework includes: conducting a gas surface reaction between an ALD-deposited ZnO and 2-methylimidazole to form a vapor-deposited ZIF-8 metal organic framework, wherein the gas surface reaction is conducted at a temperature greater than 140 C, and wherein the gas surface reaction is conducted at a pressure of less than 1000 mTorr. In a particular embodiment, the gas surface reaction is conducted at a temperature of 160 C. A process for preparing a laminate includes: performing ALD of zinc oxide as a base between 1 nm to 10 nm in thickness, exposing 2-methylimidazole vapor phase linker at chemical vapor deposition at a temperature range of greater than 140 C to less than or equal to 180 C in a vacuum condition, and cycling of the ZnO ALD and 2-methylimidazole exposure to deposit a film or fill a gap.

The invention discloses a thermal power generating unit main reheating steam temperature wide-load self-adaptive adjusting method and system, relates to the technical field of electric power industry automation and control, and aims at solving the problems that an existing adjusting method is large in steam temperature fluctuation, high in thermal stress and poor in main reheating collaboration under the wide-load working condition. The method comprises the steps of calculating main steam phase saturation and mapping a target value; calculating the maximum change rate based on the thermal physical parameters of the material, and generating a reference track with the limited change rate; the steam phase saturation of the main steam is used as a phase reference, and the reheated steam is controlled to respond according to a preset phase difference; a combustion system, a flue gas temperature adjusting baffle and a temperature reducing water system are cooperatively controlled; the system comprises a vapor phase saturation processing module, a dynamic boundary generation module, a phase coordination control module, an execution mechanism coordination module, a steady state detection module and a mode switching module. Accurate steam temperature adjustment under the wide load is achieved, material thermal stress is reduced, unit operation safety and economical efficiency are improved, and the variable-load operation requirement of the unit is met.

The utility model provides a base carrier and vapor phase growth equipment, the bottom surface of a top plate of the base carrier intersects with the inner wall of a cylindrical side plate to form a first connecting surface, the top of the first connecting surface is higher than the bottom surface of the top plate, the top surface of the top plate intersects with the outer wall of the cylindrical side plate to form a second connecting surface, and the first connecting surface sinks towards the second connecting surface. The average thickness between the first connecting face and the second connecting face is not larger than the average thickness of the top plate, and therefore the peripheral area formed by intersection of the top plate and the cylindrical side plate is thinned. The heating device of the vapor phase growth equipment is arranged below the top plate carried by the base, namely, in the thinned peripheral area, so that more heat can be provided for the peripheral area of the top plate through the edge heating area compared with that of the internal area, heat can be gathered in the middle area, and further more uniform reaction temperature can be provided for the base and the substrate; and the temperature control precision of vapor phase growth equipment and the film growth quality of products are improved.

The invention provides a method for growing an aluminum nitride thick film through a hydride vapor phase epitaxy method, and belongs to the technical field of third-generation semiconductor material preparation. According to the method, an aluminum source area in HVPE equipment is improved, supply of a multi-partition independent control aluminum source is provided, a periodic etching control strategy of an HCl gas channel is introduced, and a nested collaborative epitaxy method of outer-layer aluminum source rotation and inner-layer growth cycle embedded etching is formed. The problems of aluminum source degradation, nozzle blockage and stress accumulation in existing HVPE growth can be effectively solved, and long-time continuous operation of epitaxial AlN of the HVPE equipment is achieved; interruption and replacement operations caused by degradation of the aluminum source in long-time growth are avoided; nozzle area deposition is effectively removed, and the flow field stability is maintained; the stress is dynamically released, the crack occurrence rate is reduced, the film layer integrity is improved, and the method is suitable for HVPE equipment transformation and upgrading.

The utility model relates to the technical field of aluminizing, and provides a gas phase aluminizing tool for an engine turbine blade, which comprises a loading box, and the loading box comprises a chassis for loading aluminizing raw materials; the bottom net is placed at the top of the chassis; the outer box is used for loading aluminizing raw materials and is of an annular structure with the upper end and the lower end opened, meshes are formed in the inner side of the outer box, and the outer box is placed on the outer edge of the bottom net; the inner box is of an annular structure with the upper end and the lower end opened, meshes are formed in the inner side and the outer side of the inner box, the inner box is placed in the center of the bottom net, and a placing area used for placing blades is formed between the inner box and the outer box. The base plate, the outer box and the inner box are all used for containing aluminizing raw materials, the blade is placed in the containing area between the outer box and the inner box, so that the aluminizing raw materials are arranged on the lower portion and the side face of the blade, the follow-up aluminum atmosphere can make contact with all the surfaces of the blade conveniently, and the aluminizing thickness and quality consistency of all the surfaces of the blade are improved.

A process for producing a porous host structure or a powder mass of multiple porous particulates containing silicon oxide (SiOx) therein, comprising (a) providing a porous host structure having a volume fraction of pores from 5% to 99.9%, wherein the porous host structure is selected from a carbonaceous, graphitic, graphene, or metallic material; (b) catalytically vaporizing Si from a mixture of a catalyst and elemental Si or a Si-containing material to form a vapor phase of Si or a precursor to Si; (c) immediately directing the vapor phase into pores of the porous host structure and facilitating the vapor phase to form solid Si particles or coating deposited in the pores to form a Si-impregnated porous host structure; (d) exposing the Si to an oxidizing environment to obtain SiO2-coated Si particles / coating or SiOx; and (e) optionally breaking and reducing the SiOx-impregnated porous host structure into smaller porous particulates.

A mechanical pump-free flow boiling heat sink, including an evaporator, a two-phase flow steam injector, a first condenser, a boiling pool and a second condenser. A vapor outlet of the evaporator is communicated with a vapor-phase inlet of the two-phase flow steam injector. A liquid-phase outlet of the evaporator is communicated with an inlet of the boiling pool. An outlet of the boiling pool is communicated with an inlet of the second condenser. An outlet of the second condenser is communicated with a liquid-phase inlet of the two-phase flow steam injector. An outlet of the two-phase flow steam injector is communicated with an inlet of the first condenser. An outlet of the first condenser is communicated with an inlet of the evaporator.

The invention provides a method for growing a (310) oriented beta-Ga2O3 single crystal thick film on a sapphire substrate. The method comprises the following steps: cleaning the sapphire substrate and then carrying out annealing treatment; and with hydrogen chloride gas, gallium metal and oxygen as reaction sources, epitaxially growing a (310) oriented beta-Ga2O3 single crystal thick film on the treated sapphire substrate by using a hydride vapor phase epitaxy method. According to the method for growing the (310) oriented beta-Ga2O3 single crystal thick film on the sapphire substrate, the process is simple, operation is easy, controllability is high, the obtained (310) oriented beta-Ga2O3 single crystal thick film is smooth in surface, compact and uniform in thickness, the crystallinity of the single crystal film layer is high, and the growth requirement of a single crystal epitaxial film layer of tens of micrometers can be met; in addition, the method provided by the invention can realize large-batch and large-scale production of the (310) oriented beta-Ga2O3 single crystal thick film, and meets the device preparation requirements.

A slurry reactor system including a slurry reactor configured to convert, under slurry hydroconversion conditions, a slurry reactor content flowing upwards and containing a feedstock including one or more of fats, oils and greases, a slurry hydroconversion catalyst and a hydrogen stream to a slurry hydroconversion effluent containing a slurry phase effluent including catalyst particles and a liquid product and a vapor phase effluent including a hydroconversion product, and one or more separation units in fluid communication with the slurry reactor to receive the slurry hydroconversion effluent. A given one of the one or more separation units is configured to separate the slurry phase effluent from the vapor phase effluent.

A slurry reactor system including a slurry reactor configured to convert, under slurry hydroconversion conditions, a slurry reactor content flowing upwards and containing a feedstock including one or more of fats, oils and greases, a slurry hydroconversion catalyst and a hydrogen stream to a slurry hydroconversion effluent containing a slurry phase effluent including catalyst particles and a liquid product and a vapor phase effluent including a hydroconversion product, and a separation unit internal to the slurry reactor, the separation unit being configured to separate at least a portion of the vapor phase effluent from the slurry hydroconversion effluent to produce a mixture of vapor and the slurry hydroconversion effluent having a reduced vapor phase content. The separation unit is configured to use a pump to recirculate the mixture of vapor and the slurry hydroconversion effluent flowing downwards in the slurry reactor to be combined with the slurry reactor content.

A slurry reactor system including a slurry reactor configured to convert, under slurry hydroconversion conditions, a slurry reactor content flowing upwards and containing a feedstock including one or more of fats, oils and greases, a slurry hydroconversion catalyst and a hydrogen stream to a slurry hydroconversion effluent containing a slurry phase effluent including catalyst particles and a liquid product and a vapor phase effluent including a hydroconversion product, and a separation unit external to the slurry reactor to separate the slurry phase effluent from the vapor phase effluent to produce a recycled slurry stream. An inlet of the separation unit is in fluid communication with an outlet of the slurry reactor to receive the slurry hydroconversion effluent from the slurry reactor and an outlet of the separation unit is in fluid communication with an inlet of the slurry reactor to receive the recycled slurry stream from the separation unit.

A circulating vapor phase soldering device, which comprises: a liquid storage tank (10), the liquid storage tank (10) being used for storing a vapor phase liquid; a preheating apparatus (20), the preheating apparatus (20) being connected to the liquid storage tank (10) and heating the vapor phase liquid to a first temperature; a heating cavity (30), the heating cavity (30) being connected to the preheating apparatus (20) and being used for heating the vapor phase liquid until same evaporates, so as to heat a workpiece; a recovery apparatus (40), the recovery apparatus (40) being connected to the heating cavity (30) and the liquid storage tank (10), and being used for recovering the vapor phase liquid from the heating cavity (30) into the liquid storage tank (10); and a piping system (50), the piping system (50) being used for driving the vapor phase liquid to sequentially enter, from the liquid storage tank (10), the preheating apparatus (20), the heating cavity (30) and the recovery apparatus (40), and for driving the vapor phase liquid to enter the liquid storage tank (10) from the recovery apparatus (40). The liquid storage tank (10), the preheating apparatus (20), the heating cavity (30) and the recovery apparatus (40) are connected into a loop by means of the piping system, such that after soldering is completed, the vapor phase liquid can flow back into the liquid storage tank (10) for storage, thereby realizing full cyclic utilization of the vapor phase liquid during a soldering process, improving the utilization efficiency of the vapor phase liquid, reducing resource consumption, and lowering production and processing costs.

The utility model provides a substrate holding device and vapor phase growth equipment. The substrate holding device comprises a bearing base. The upper surface of the bearing base is provided with a groove for bearing a substrate, the top edge part of the bearing base is a peripheral protruding part, and an arc-shaped surface of which the curvature radius does not exceed 20mm is arranged between the side wall and the bottom surface of the peripheral protruding part; the bearing base is internally provided with an air channel, a first end opening of the air channel is located in the bottom face of the groove, a second end opening of the air channel is led out from the arc-shaped face, and due to the fact that the top edge of the bearing base is the peripheral protruding part, when air flows through a narrow area between the peripheral protruding part and the inner wall of the cavity, the flow speed is increased, and local pressure is increased; when the substrate is bent, a low-pressure area is generated near the arc-shaped surface, and then a remarkable negative pressure effect is generated in the air channel, so that the substrate is adsorbed on the bottom surface of the groove, the contact force between the substrate and the bottom surface of the groove is increased, and the substrate is prevented from warping and separating from the bottom surface of the groove.

The utility model provides a heating cavity for off-line gas phase welding. The heating cavity for off-line gas phase welding comprises a placing frame, a cavity body, a cavity cover and a lifting mechanism, the top of the cavity is open, the bottom of the cavity cover is open and corresponds to the cavity, and the placing frame is connected to the bottom of the cavity cover in a sliding mode; and the lifting mechanism is used for driving the cavity cover to execute a lifting action so as to be far away from or close to the cavity. The placing frame moving along with the cavity cover is used for containing workpieces, operation is easy and convenient, the workpieces can be rapidly taken and placed when the cavity cover is lifted, and the workpiece feeding and discharging efficiency is improved; when the workpieces are manually taken and placed, the workpieces do not need to stretch into the cavity, the operation risk is reduced, and the feeding and discharging operation safety is guaranteed; and meanwhile, the workpiece is located in the upper space in the heating cavity through the arrangement of the containing frame, the workpiece is prevented from making direct contact with high-temperature gas-phase liquid at the bottom of the cavity or liquefied gas-phase liquid obtained after heat absorption and condensation, the phenomenon that the workpiece is heated unevenly in the welding process is effectively prevented, and the welding quality of the workpiece is guaranteed.

The utility model discloses vapor phase growth equipment. The vapor phase growth equipment comprises a process chamber; the barrel is arranged in the process chamber; the pipe body is arranged on the bottom surface of the barrel and is communicated with the interior of the barrel; the first air channel extends in the side wall of the pipe body, the bottom wall of the barrel body and the side wall of the barrel body in sequence; the base is provided with a recess, and the recess is used for placing a substrate; a second air channel is formed in the base, one end of the second air channel communicates with the first air channel, and the other end of the second air channel communicates with the recess. The rotary sealing mechanism is connected with the bottom of the tube body so as to drive the base to rotate, and the rotary sealing mechanism is provided with a driving gas inlet device which is communicated with the first gas channel so as to provide driving gas which enables the substrate in the concave hole to rotate; the rotating stability of the base, the mixing uniformity of reaction gas above the substrate and the temperature uniformity of the substrate are facilitated, the influence of corrosive reaction gas on the heater can be reduced or avoided, and the obvious heat influence of the heater on the rotating driving device can be reduced or avoided.

The invention provides a P-type beta-Ga2O3 single crystal film as well as a preparation method and application thereof, and belongs to the technical field of gallium oxide materials. Vapor phase epitaxial film growth is carried out on the surface of a beta-Ga2O3 single crystal substrate to obtain the P-type beta-Ga2O3 single crystal film, and nitrogen is used as carrier gas and nitrogen oxide is used as an oxidizing agent in the vapor phase epitaxial film growth process. In the growth process of the vapor phase epitaxial thin film, an N element is in a thermodynamic unstable state in a gallium oxide crystal and is easy to volatilize from the gallium oxide crystal, so that after the carrier gas is changed into nitrogen, the concentration of the N element in the environment is increased, the volatilization of the N element in the gallium oxide thin film is inhibited, the N doping efficiency is improved, and the yield of the gallium oxide thin film is improved. According to the method, nitrogen oxide is used as an oxidizing agent, nitrogen is used as carrier gas, and the nitrogen doping concentration of the P-type beta-Ga2O3 single crystal thin film is improved under the combined action.

An alkali-metal removal system and method for in-situ vapor phase removal and downstream reclamation of metallic lithium from reusable lithium deposition process kit parts are provided. The system and method include preparing a cleaning gas containing vapor phase fluorinated alcohol. The system and method further include exposing parasitic lithium deposits to the cleaning gas containing the vapor phase fluorinated alcohol and etching metallic lithium from parts coated with parasitic lithium deposition. The system and method further include collecting reaction byproducts and unreacted cleaning gas. The system and method further include separating lithium compounds from the reusable cleaning gas.

Disclosed is a loop heat pipe having an evaporator, a condenser, a vapor line connected between the evaporator and the condenser through which a vapor-phase working fluid flows, a liquid line connected between the condenser and the evaporator through which a liquid-phase working fluid flows, and a wick having an elasticity and provided inside the evaporator in a compressed and deformed state. The liquid-phase working fluid permeates into the wick, and a boundary between the liquid phase working fluid and the vapor phase working fluid is formed in the wick. A stress generated in the wick due to compressive deformation is greater than a pressure loss that occurs during circulation of the working fluid from the vapor-phase side of the boundary via the condenser back to the liquid-phase side of the boundary.

The present invention relates to a low-ammonia ratio fixed-bed catalyst for preparing 6-aminocapronitrile by a vapor phase process and a preparation method thereof. The fixed-bed catalyst comprises the following components, based on 100 wt% of the total weight of the catalyst: a) 15-50 wt% of silicalite-1 molecular sieve; b) 10-30 wt% of aluminum nitride; c) 5-25 wt% of silicon oxide provided as silica sol; d) 5-10 wt% of aluminum oxide provided as pseudo-boehmite; and e) 5-10 wt% of attapulgite. The catalyst of the present invention exhibits high conversion and selectivity in the vapor phase process for preparing 6-aminocapronitrile under low ammonia ratio conditions, thereby improving the competitiveness of the device.

A manifold-microchannel (MMC) heat sink can comprise a plurality of microchannels and a manifold. The microchannels can be segregated into successive heat transfer stages. The manifold can include at least one connecting channel and at least one vapor permeable membrane portion. Each connecting channel can fluidically couple one of the heat transfer stages to a successive heat transfer stage. Each vapor permeable membrane portion can allow coolant in a vapor phase to pass therethrough while retaining coolant in a liquid phase within the corresponding connecting channel. A vapor quality of the coolant exiting from one of the heat transfer stages into a connecting channel can be greater than a vapor quality of the coolant entering the successive heat transfer stage from the same connecting channel.

Compositions and methods for removing hydrogen sulfide, gas phase thiol, carbonyl sulfide, and combinations thereof from a gas / vapor stream are provided by utilizing a renewable formulation medium. The composition may include an activated carbon media (BCT-AC media) treated with a binding complex. The compositions and methods offer advantages over currently known technologies by reducing the number of process steps required and thus reduced capital and operating costs, and eliminating aqueous phase processes that are expensive to run and produce undesired waste by-products. In addition, the provided compositions and methods remove hydrogen sulfide as recoverable elemental sulfur, and are ideally suited for use in gas / vapor reactions in which carbon dioxide may be present, as it has no process or economic impact on the composition or process.

A vapor compression system includes a compressor including a compression stage for compressing a working fluid; a first heat exchanger located downstream of the compressor, the first heat exchanger receiving and cooling a working fluid; a second heat exchanger located downstream of the first heat exchanger and upstream of the compressor, the second heat exchanger receiving and heating the working fluid; and a reservoir positioned between the second heat exchanger and the compression stage. The reservoir defines an internal volume for containing a vapor phase and a liquid phase of the working fluid, and the reservoir includes an inlet to receive the working fluid from the second heat exchanger and an outlet to allow the vapor phase of the working fluid to exit the reservoir and flow toward the compression stage. The reservoir atomizes a liquid phase of the working fluid into droplets and introduces the droplets into a vapor phase of the working fluid exiting the reservoir.

This invention relates to the field of vapor phase etching (VPE) apparatus technology, specifically a double-sided VPE apparatus for semiconductor silicon wafers. The apparatus includes a VPE apparatus body, a silicon wafer transfer mechanism at the upper end of the apparatus body, an etching chamber fixedly mounted on the outer side of the apparatus body, and a mounting base fixedly mounted on the upper end of the etching chamber. By combining the VPE mechanism with a central air-guiding mechanism, stable adsorption of the semiconductor silicon wafer is ensured during the etching process, avoiding vibration and improving etching efficiency and precision. A Bernoulli-style chuck structure is formed by the cooperation of the air-guiding support stage and the central stage, stably "fixing" the silicon wafer above the air-guiding support stage, minimizing contact with the semiconductor silicon wafer, avoiding physical damage and contamination, and simultaneously enabling multi-directional airflow distribution to meet auxiliary heat dissipation needs for the semiconductor silicon wafer, further improving the accuracy and etching efficiency of the VPE process.

This utility model discloses a regenerated steam superheating system for an energy-saving steam oven, including a superheater, a regenerated steam device, and a water supply pipeline. The superheater is equipped with a high-temperature, high-pressure steam outlet, and the regenerated steam device is equipped with a high-temperature, high-pressure steam inlet and a regenerated steam outlet. The high-temperature, high-pressure steam outlet is connected to both the high-temperature, high-pressure steam inlet and the water supply pipeline via a gas-liquid separator. The water supply pipeline is connected to the regenerated steam device, and the regenerated steam outlet is connected to the superheater. This utility model uses high-temperature, high-pressure steam as a heat source to heat the regenerated steam in the superheater, and separates the vapor phase of the high-temperature, high-pressure steam, returning it to the regenerated steam device for power steam recycling. The heated regenerated steam significantly reduces its moisture content while increasing its temperature. Compared with the prior art, the regenerated steam superheating system of this utility model produces steam with low moisture content and high temperature, meeting the specific process requirements of crispy noodle production.

An improved Battery Electric Vehicle heat transfer fluids is made diluting a heat transfer fluid concentrate comprising greater than or equal to 85 weight percent of a freezing point depressant; 20 to 80 ppm of calcium ions; an azole compound; 100 to 250 ppm of an inorganic phosphate; and a polyelectrolyte polymer dispersant, wherein the heat transfer fluid concentrate has a pH of 7 to 9.0 and the weight ratio of polyelectrolyte polymer dispersant to calcium ions is 1 to 3 and the weight ratio of inorganic phosphate to calcium is 2 to 4. For use this concentrate is preferably diluted with deionized water usually 50 / 50. The addition of N-methyl-imidazole provides protection against vapor phase corrosion particularly for ferrous metals.

The invention provides a system and a method for simultaneously filling multiple methane tank cars for spaceflight. The invention discloses a system for simultaneously filling multiple methane tank cars for spaceflight. Comprising an air temperature vaporizer, a methane filling low-pressure tank, a plurality of pressurized liquid phase pipeline systems used for communicating a methane tank car with the air temperature vaporizer, a plurality of pressurized vapor phase pipeline systems used for communicating the methane tank car with the air temperature vaporizer, and a plurality of liquid outlet pipeline systems used for communicating the methane tank car with the methane filling low-pressure tank, the plurality of pressurized liquid phase pipeline systems and the plurality of pressurized vapor phase pipeline systems are connected with the air temperature vaporizer, and the plurality of liquid outlet pipeline systems are connected with the methane filling low-pressure tank.

The present application relates to a kind of carbon smoke particle surface water vapor phase change test system and method, belong to phase change test technical field, carbon smoke particle sampling sub-system is used to provide primary carbon smoke particle or secondary carbon smoke particle to sample bin, temperature / pressure control subsystem is used to adjust the temperature and pressure of sample bin, so that sample bin is at predetermined temperature and predetermined pressure, predetermined humidity water vapor generation subsystem is used to provide predetermined humidity water vapor to sample bin, detection component is used to detect the phase change of predetermined humidity water vapor on the surface of primary carbon smoke particle or secondary carbon smoke particle at predetermined temperature and predetermined pressure, so that the temperature-pressure-humidity of sample bin can be realized coordinated control, carries out carbon smoke particle surface water vapor phase change test research under different temperature, humidity, pressure conditions.