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954 results about "Vapor phase" patented technology

Vapor-phase lubrication fuel additive for high speed limited-life bearings

Systems and methods for providing lubrication to a gas turbine engine are described. An example gas turbine engine includes a plurality of bearings disposed along an axial length of a rotatable shaft to provide rotational support between a static structure and at least one of a compressor and a turbine of the gas turbine engine. The gas turbine engine further includes a fuel system operable to deliver a mixture of fuel and lubricant sequentially to at least one of the plurality of bearings and the combustor so that during operation of the gas turbine engine, at least the lubricant within the mixture is in a liquid phase prior to being received by the at least one of the plurality of bearings, and in a vapor phase once the lubricant is delivered to the at least one of the plurality of bearings.
Owner:BLUEHALO LLC

Vapor deposition of films comprising molybdenum

Vapor deposition processes for forming thin films comprising molybdenum on a substrate are provide. In some embodiments the processes comprise a plurality of deposition cycles in which the substrate is separately contacted with a vapor phase molybdenum precursor comprising a molybdenum halide, a first reactant comprising CO, and a second reactant comprising H2. In some embodiments the thin film comprises MoC, Mo2C, or MoOC. In some embodiments the substrate is additionally contacted with a nitrogen reactant and a thin film comprising molybdenum, carbon and nitrogen is deposited, such as MoCN or MoOCN.
Owner:ASM IP HLDG BV

Gallium oxide epitaxial wafer preparation method, epitaxial growth system and gallium oxide epitaxial wafer

The invention provides a gallium oxide epitaxial wafer preparation method, an epitaxial growth system and a gallium oxide epitaxial wafer. The method comprises the following steps: placing a (100)-surface gallium oxide substrate in a reaction chamber, introducing a carrier gas with a first preset flow, setting the pressure in the reaction chamber to be a first preset pressure, and raising the temperature to a first preset temperature; a second preset flow of hydrogen is introduced, and the (100) surface gallium oxide substrate is pretreated; setting the pressure in the reaction chamber as a second preset pressure, raising the temperature of the source region to a second preset temperature, and raising the temperature of the growth region to a third preset temperature; and introducing hydrogen chloride with a third preset flow rate, oxygen with a fourth preset flow rate and hydrogen with a fifth preset flow rate into the reaction chamber, and carrying out vapor phase epitaxy so as to prepare the (100)-surface gallium oxide epitaxial film on the surface of the (100)-surface gallium oxide substrate. The method can promote step flow growth, reduce polycrystal particle aggregation, reduce three-dimensional island-shaped growth, and improve the surface continuity and quality of an epitaxial film.
Owner:CHINA ELECTRONICS TECH GRP NO 46 RES INST

Preparation device and method based on growth of large-size silicon carbide single crystals

The invention discloses a preparation device and method for growing a large-size silicon carbide single crystal. A raw material gas phase in a high-temperature area is transmitted to the surface of a seed crystal in a low-temperature area for crystal growth by using a physical gas phase transmission method; the device comprises a furnace chamber, a movable sectional type heating system, a thermal insulation material, a graphite crucible, porous graphite, a seed crystal unit, a crystal growth induction forming device and an electric field device. The method comprises the following steps: installing a seed crystal unit in a crucible filled with silicon carbide powder, placing the crucible in a heater, and carrying out a crystal growth stage to prepare the silicon carbide single crystal. The whole growth process of the crystal is in a constant temperature state, thermal stress caused by the temperature difference between the growth end and the seed crystal end and the temperature difference between the crystal edge and the crystal center in the top end seed crystal method crystal growth process is avoided, the dislocation defect of the crystal is reduced, and finally the high-quality silicon carbide single crystal is obtained. And the production cost is reduced.
Owner:ANHUI WEIXIN CHANGJIANG SEMICON MATERIAL CO LTD

A high-strength PET composite material and preparation method thereof

The invention discloses a high-strength PET composite material and a preparation method thereof, and relates to the technical field of polymer materials. The invention first adds fumed silica during the preparation of graphene aerogel, and the siloxy groups on the surface of the fumed silica combine with the hydroxyl groups of the graphene oxide hydrogel, and the aerogel is mixed after heat treatment, which can improve the strength of the composite material and achieve excellent hydrophobic effect; secondly, dopamine is grafted on the surface of the aerogel, and the amino groups of the dopamine and the silanol groups of the silica undergo dehydration condensation to form a composite swelling layered silicate to prepare a hybrid filler; dopamine improves the dispersibility and compatibility of the filler in PET; when fine cracks appear in the composite material due to aging, the swelling layered silicate and the dopamine rainwater work together to achieve a self-repairing effect, and can also remove free radicals, so that the strength of the composite material is stable and the anti-aging performance is improved. The PET composite material prepared by the invention has high strength and anti-aging effects.
Owner:JIANGSU LINDEMANN NEW MATERIAL TECH CO LTD +1

Gas-phase sweating cooling thermal protection system and method with flow self-adaptive control function

The invention discloses a gas-phase sweating cooling thermal protection system with self-adaptive flow control. The gas-phase sweating cooling thermal protection system comprises a porous structure, a compact material structure, a porous structure inner cavity, a sweating agent supply pipeline, a pressure regulating device, a sweating agent gas source and an electronic control system. The invention further discloses a flow self-adaptive control gas phase sweating cooling thermal protection method, and when the thermal environment state is stabilized, the sweating agent supply flow q of the sweating agent gas source is determined according to the pneumatic heat flow Q on the outer side of the porous structure, the pneumatic pressure P1 on the outer side of the porous structure and the pressure P2 of an inner cavity of the porous structure; in an unstable thermal environment state, pre-judging changes of Q and P1 at the next moment, and adjusting q in advance; meanwhile, the temperature T of the porous structure is monitored, and when T rises to be higher than the upper limit of the optimal temperature interval, the sweating agent flow increment is started till T falls to the lower limit of the optimal temperature interval. The pneumatic thermal protection requirement can be efficiently met with the lower sweating agent flow requirement, and the pneumatic thermal protection device has wide application prospects in the technical field of pneumatic thermal protection.
Owner:CHINA ACAD OF AEROSPACE AERODYNAMICS

Method and equipment for preparing high-purity electronic-grade hydrogen chloride from hydrogen-rich hydrogen chloride feed gas

The invention discloses a method and equipment for preparing high-purity electronic-grade hydrogen chloride from hydrogen-rich hydrogen chloride feed gas. The bid invitation comprises the following steps: (1) removing water through a two-stage deep freezer; (2) further removing water through adsorption of an adsorption tower; (3) rectifying: directly discharging gas-phase materials at the top of the tower, namely hydrogen, carbon dioxide and other non-condensable steam, into an alkali washing section; (4) introducing the material into a light component removal tower for further rectification, directly discharging a gas-phase material at the top of the tower, namely hydrogen chloride gas containing C1 and C2, into an alkali washing section, and circulating a material at the bottom of the tower back to the light component removal tower through a dehydrogenation tower; and (5) introducing the material into a heavy component removal tower for further rectification, directly discharging hydrogen chloride liquid containing chlorine and other high-boiling-point impurities in a tower kettle into an alkali washing section, and extracting a vapor phase at the top of the tower to obtain high-purity electronic-grade hydrogen chloride. According to the method, the load of the adsorption tower is reduced, and the treatment capacity per unit time is increased; the method has the advantages of simple process, low energy consumption, high recovery rate, easiness in stable preparation of high-purity electronic-grade hydrogen chloride, and facilitation of improvement of production scale and yield.
Owner:HAOHUA GAS CO LTD +1

High-strength liquid silicone rubber composition and preparation method thereof

The invention discloses a high-strength liquid silicone rubber composition and a preparation method thereof. The rubber composition comprises the following raw material components in parts by weight: 100.0 parts of vinyl-terminated silicone oil; 30.0 parts to 45.0 parts of modified white carbon black; 1.0 to 5.0 parts of modified nano titanium dioxide; 14.0 parts to 26.0 parts of aluminum hydroxide; 7.0 parts to 9.0 parts of hydrogen-containing silicone oil; 1.0 part to 5.0 parts of a silane coupling agent; 0.2 to 0.5 part of a catalyst; wherein the modified white carbon black is prepared by modifying white carbon black prepared by a vapor phase method through dimethyldichlorosilane or trimethylchlorosilane, and the modified nano titanium dioxide is prepared by modifying through a surface silicon deposition method; the particle size of the white carbon black prepared by the gas phase method is 5-50 nm, and the BET specific surface area of the white carbon black prepared by the gas phase method is 300-400 m < 2 > / g. The strength of the product is improved by adding the inorganic filler, and the nano titanium dioxide is modified by a surface silicon deposition method, so that the surface energy of the nano titanium dioxide is remarkably improved, and the dispersity and fluidity of the liquid silicone rubber are improved.
Owner:HANGSHI TECH DEV (HANGZHOU) CO LTD

Preparation method of graded ordered silicon-carbon negative electrode material for lithium ion battery

The invention belongs to the technical field of lithium ion batteries, and particularly relates to a preparation method of a graded ordered silicon-carbon negative electrode material for a lithium ion battery, which comprises the following steps: (S1) mixing phenolic resin and a template agent, calcining, and etching to obtain porous carbon containing macropores; (S2) carrying out cracking and carbon coating on the silicon source gas to obtain nano crystalline silicon containing a carbon coating layer; (S3) mixing the porous carbon with the nano crystalline silicon containing the carbon coating layer, and then carrying out ultrasonic vibration, so that macropores of the porous carbon are filled with the nano crystalline silicon to obtain a silicon-carbon composite material I; (S4) treating the silicon-carbon composite material I by using a carbon-containing sealing agent, and then activating to obtain a silicon-carbon composite material II; and (S5) carrying out vapor phase silicon deposition on the silicon-carbon composite material II to fill the amorphous silicon in the pores of the porous carbon, and then carrying out carbon coating to obtain the graded ordered silicon-carbon negative electrode material. The silicon-carbon negative electrode material prepared by the invention is of a composite structure in which crystalline silicon and amorphous silicon are spatially and orderly distributed, so that the structural stability and the uniform distribution of silicon are realized.
Owner:ZHEJIANG GEYUAN NEW MATERIAL TECH CO LTD

A kind of anti-blocking type precipitation tower tray

The present application provides an anti-clogging type precipitation tower plate, comprising a tower plate, the tower plate comprising a liquid receiving area, a liquid downfalling area, and a vapor phase channel, the liquid downfalling area is provided with an overflow weir near the vapor phase channel side, a liquid downfalling hole is provided in the liquid downfalling area, and a baffle is provided at the lower part of the liquid downfalling hole; in the present application, the liquid phase passes through the baffle and the vapor phase channel in the tower, undergoes multiple baffles and falling processes, so that the mass transfer and heat transfer effects are enhanced, and at the same time, the flushing effect of the liquid phase also helps to prevent solid accumulation and clogging on the tower plate, improves the mass transfer efficiency and operation effect, and can realize the discharge of solid products from the tower plate to the tower kettle and finally out of the system; and the tower plate of the present application is provided with independent vapor phase and liquid phase channels, and effective vapor-liquid mass transfer is realized between the tower plates, thereby fully avoiding the problem of vapor phase channel clogging, and because the liquid flow moves in a zigzag line in the tower, the residence time of the liquid phase in the tower is extended, so that the raw materials have a longer decomposition or polymerization time.
Owner:TIANJIN AOZHAN XINGDA TECH CO LTD +2

Preparation method of high-purity ultra-clean hydroxylamine aqueous solution

The invention discloses a preparation method of a high-purity ultra-clean hydroxylamine aqueous solution. A four-stage purification process comprises the following steps: 1) low-temperature chelation-ceramic membrane metal removal; 2) molecular sieve membrane rectification decomposition prevention; 3) pulse electrodialysis reversal deep desalination; and 4) gradient filtration terminal refining. According to the preparation method of the high-purity ultra-clean hydroxylamine aqueous solution, a low-temperature molecular sieve membrane rectification technology is adopted, hydroxylamine liquid-phase thermal decomposition is avoided through a vapor phase separation mechanism, and the decomposition rate is reduced to 1t from 15% of a traditional process; the method comprises the following steps of: removing metal through chelation-electrodialysis synergistically, ensuring that Fe and Cu ion residues are less than or equal to 0.05 ppb through a thiosemicarbazide-bipolar membrane system, ensuring the nitrogen environment in the whole process, ensuring that the dissolved oxygen is less than or equal to 5ppb, replacing liquid phase distillation with molecular sieve membrane vapor phase separation, solving hydroxylamine liquid phase thermal decomposition, and breaking through the trace metal removal limit by combining thiosemicarbazide-bipolar membrane synergistically removing impurities. And then through nanoscale terminal filtration, the metal / particle control reaches ppb-level limit which is superior to the SEMI standard, and double spanning of quality and cost is realized.
Owner:TONGLING XINGYAO MICRO NEW MATERIALS CO LTD

A target material feeding device for physical vapor deposition equipment

The present invention discloses a target material feeding device for a physical vapor deposition device, comprising a vacuum deposition chamber (1), a water-cooled crucible (3), one or more target material tubes (4) containing target materials (2), a target material support plate (6), a target material lifting rod (7), a target material waste cleaning device, and a target material filling device. The target material tubes (4) are arranged in sequence and can perform controlled reciprocating motion along the target material support plate (6). The target material lifting rod (7) can move up and down at the bottom of the vacuum deposition chamber (1). The target material waste cleaning device is located directly below the water-cooled crucible (3) and is responsible for cleaning target material residues and target material debris out of the deposition work area. The target material filling device is located below the vacuum deposition chamber (1) and is used to fill the empty target material tube with new target materials. The present invention can provide uninterrupted target material feeding for the preparation of thermal barrier coatings in electron beam physical vapor phase equipment, and is helpful to realize an uninterrupted process without breaking the vacuum of the deposition chamber.
Owner:WUXI CHENGFENG AVIATION ENG TECH CO LTD

Preparation method and application of lignin-based resin and carbon material for battery

The present application discloses a method for preparing a carbon material for a battery, comprising: filtering and concentrating papermaking black liquor to obtain liquid lignin; polymerization: adding a cross-linking agent to the liquid lignin for cross-linking and curing reaction to obtain a lignin polymer solid; pre-oxidation: pre-oxidizing the lignin polymer solid to obtain a lignin-based resin; pre-carbonization: pre-carbonizing the lignin-based resin in a non-oxidizing gas atmosphere to obtain a carbon material precursor 1; gas phase deashing: gas phase deashing the carbon material precursor 1 in a non-oxidizing gas atmosphere under the action of a halogen compound and / or a halogen element to obtain a carbon material precursor 2; calcination: crushing the carbon material precursor 2 and calcining it in a protective atmosphere to obtain a carbon material for a battery. The method of the present application effectively improves the expansion and foaming phenomenon during lignin carbonization, and the obtained carbon material has low ash content, controllable specific surface area, and excellent electrochemical performance. A lignin-based resin as mentioned above is also disclosed.
Owner:SHANDONG SHENGQUAN NEW ENERGY TECH CO LTD

Rapid process for vapor-deposited ZIF-8 metal organic framework (MOF) for low-k dielectric seamless high aspect ratio gap fill

A process for forming a vapor-deposited ZIF-8 metal organic framework includes: conducting a gas surface reaction between an ALD-deposited ZnO and 2-methylimidazole to form a vapor-deposited ZIF-8 metal organic framework, wherein the gas surface reaction is conducted at a temperature greater than 140 C, and wherein the gas surface reaction is conducted at a pressure of less than 1000 mTorr. In a particular embodiment, the gas surface reaction is conducted at a temperature of 160 C. A process for preparing a laminate includes: performing ALD of zinc oxide as a base between 1 nm to 10 nm in thickness, exposing 2-methylimidazole vapor phase linker at chemical vapor deposition at a temperature range of greater than 140 C to less than or equal to 180 C in a vacuum condition, and cycling of the ZnO ALD and 2-methylimidazole exposure to deposit a film or fill a gap.
Owner:SAMSUNG ELECTRONICS CO LTD +1

Selective passivation and selective deposition

Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.
Owner:ASM IP HLDG BV

Modified gas-phase nano SiO2, composite emulsion, super-hydrophobic self-cleaning coating and preparation method of super-hydrophobic self-cleaning coating

The invention provides modified gas-phase nano SiO2, a composite emulsion, a super-hydrophobic self-cleaning coating and a preparation method thereof, and belongs to the field of material protection. The surfaces of nano particles of the modified gas-phase nano SiO2 are provided with long-chain hydrocarbons and contain unsaturated double bonds; wherein the number of carbon atoms of the long chain hydrocarbon is 5-50. According to the invention, the hydrophilic gas-phase nano SiO2 is modified, so that the surface roughness is improved, and the wear resistance and corrosion resistance of the coating are improved.
Owner:SHIHEZI UNIVERSITY

Two-phase flow boiling heat transfer numerical simulation method, device and equipment based on deep learning and storage medium

The invention provides a two-phase flow boiling heat transfer numerical simulation method, device and equipment based on deep learning and a storage medium, and relates to the technical field of heat transfer science, the method comprises the following steps: inputting a target input parameter into a target deep neural network model to obtain a bubble separation characteristic key parameter, and constructing a wall surface heat flow distribution model according to the key parameter; the bubble separation characteristic key parameters comprise bubble separation diameter, separation frequency, slippage speed, slippage distance, rising diameter and nucleation density; embedding the bubble wall surface heat flow distribution model into the Euler-Euler two-fluid framework to obtain the embedded two-fluid framework; the embedded two-fluid framework comprises a mass conservation equation, a momentum conservation equation and an energy conservation equation of a liquid phase and a vapor phase; simulation of a two-phase flow boiling heat transfer numerical value is carried out through the two embedded fluid frames, and liquid-phase and vapor-phase temperature field and velocity field distribution is obtained. According to the method, the applicability of numerical simulation on the macroscopic boiling phenomenon is high.
Owner:INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI

Thermal power generating unit main reheating steam temperature wide load self-adaptive adjusting method and system

The invention discloses a thermal power generating unit main reheating steam temperature wide-load self-adaptive adjusting method and system, relates to the technical field of electric power industry automation and control, and aims at solving the problems that an existing adjusting method is large in steam temperature fluctuation, high in thermal stress and poor in main reheating collaboration under the wide-load working condition. The method comprises the steps of calculating main steam phase saturation and mapping a target value; calculating the maximum change rate based on the thermal physical parameters of the material, and generating a reference track with the limited change rate; the steam phase saturation of the main steam is used as a phase reference, and the reheated steam is controlled to respond according to a preset phase difference; a combustion system, a flue gas temperature adjusting baffle and a temperature reducing water system are cooperatively controlled; the system comprises a vapor phase saturation processing module, a dynamic boundary generation module, a phase coordination control module, an execution mechanism coordination module, a steady state detection module and a mode switching module. Accurate steam temperature adjustment under the wide load is achieved, material thermal stress is reduced, unit operation safety and economical efficiency are improved, and the variable-load operation requirement of the unit is met.
Owner:HEBEI JIANTOU RENQIU THERMAL POWER CO LTD

Low salinity water production in crude oil processing

A side-stream is separated from an oil phase stream that is discharged from a crude oil separator in a gas-oil separation plant. The side-stream contains water and oil. At least a portion of the oil phase stream that is discharged from the crude oil separator in the gas-oil separation plant is flowed to a desalter in the gas-oil separation plant. An electric field is applied across the side-stream to coalesce aqueous droplets present in the side-stream to form an aqueous phase. The aqueous phase is separated from the oil of the side-stream. At least a portion of the aqueous phase is evaporated to form a wastewater phase and a vapor phase. At least a portion of the vapor phase is condensed to produce a wash water. The wash water is flowed to the desalter. The wash water can be referred to washing water or dilution water.
Owner:SAUDI ARABIAN OIL CO

Thermomodulating Heat Pipe

A thermomodulating heat pipe is provided including a heat pipe envelope having a capillary wick extending substantially continuously the full length of the heat pipe and a void space interior of the capillary wick. The heat pipe envelope has a nominal evaporator section, a nominal condenser section where the nominal condenser section includes an active condenser portion and an inactive condenser portion, and a reservoir section extending from the inactive condenser portion. At a nominal condition, a heat pipe fluid is provided with a liquid phase filling the capillary wick and a vapor phase filling the void space of the nominal evaporator section and the active condenser portion, a non-condensable gas filling the void space of at least the reservoir section and the inactive condenser portion. Depending on thermal conditions, both prograde and retrograde heat transfer are enabled.
Owner:THE GOVERNMENT OF THE UNITED STATES AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE

Pedestal carrier and vapor phase growth apparatus

The utility model provides a base carrier and vapor phase growth equipment, the bottom surface of a top plate of the base carrier intersects with the inner wall of a cylindrical side plate to form a first connecting surface, the top of the first connecting surface is higher than the bottom surface of the top plate, the top surface of the top plate intersects with the outer wall of the cylindrical side plate to form a second connecting surface, and the first connecting surface sinks towards the second connecting surface. The average thickness between the first connecting face and the second connecting face is not larger than the average thickness of the top plate, and therefore the peripheral area formed by intersection of the top plate and the cylindrical side plate is thinned. The heating device of the vapor phase growth equipment is arranged below the top plate carried by the base, namely, in the thinned peripheral area, so that more heat can be provided for the peripheral area of the top plate through the edge heating area compared with that of the internal area, heat can be gathered in the middle area, and further more uniform reaction temperature can be provided for the base and the substrate; and the temperature control precision of vapor phase growth equipment and the film growth quality of products are improved.
Owner:CHUYUN TEK (SHANGHAI) CO LTD

Method for growing aluminum nitride thick film by hydride vapor phase epitaxy method

The invention provides a method for growing an aluminum nitride thick film through a hydride vapor phase epitaxy method, and belongs to the technical field of third-generation semiconductor material preparation. According to the method, an aluminum source area in HVPE equipment is improved, supply of a multi-partition independent control aluminum source is provided, a periodic etching control strategy of an HCl gas channel is introduced, and a nested collaborative epitaxy method of outer-layer aluminum source rotation and inner-layer growth cycle embedded etching is formed. The problems of aluminum source degradation, nozzle blockage and stress accumulation in existing HVPE growth can be effectively solved, and long-time continuous operation of epitaxial AlN of the HVPE equipment is achieved; interruption and replacement operations caused by degradation of the aluminum source in long-time growth are avoided; nozzle area deposition is effectively removed, and the flow field stability is maintained; the stress is dynamically released, the crack occurrence rate is reduced, the film layer integrity is improved, and the method is suitable for HVPE equipment transformation and upgrading.
Owner:PEKING UNIV

Gas phase aluminizing tool for engine turbine blade

The utility model relates to the technical field of aluminizing, and provides a gas phase aluminizing tool for an engine turbine blade, which comprises a loading box, and the loading box comprises a chassis for loading aluminizing raw materials; the bottom net is placed at the top of the chassis; the outer box is used for loading aluminizing raw materials and is of an annular structure with the upper end and the lower end opened, meshes are formed in the inner side of the outer box, and the outer box is placed on the outer edge of the bottom net; the inner box is of an annular structure with the upper end and the lower end opened, meshes are formed in the inner side and the outer side of the inner box, the inner box is placed in the center of the bottom net, and a placing area used for placing blades is formed between the inner box and the outer box. The base plate, the outer box and the inner box are all used for containing aluminizing raw materials, the blade is placed in the containing area between the outer box and the inner box, so that the aluminizing raw materials are arranged on the lower portion and the side face of the blade, the follow-up aluminum atmosphere can make contact with all the surfaces of the blade conveniently, and the aluminizing thickness and quality consistency of all the surfaces of the blade are improved.
Owner:CHENGDU HEHONG TECH CO LTD

Gas-phase silicon-carbon negative electrode material of porous carbon base material

The invention relates to a gas-phase silicon-carbon negative electrode material of a porous carbon base material, which comprises the following steps: preparing porous starch, preparing a silicon / porous carbon composite material, preparing a micron porous Mg2Si negative electrode, preparing a nano porous silicon / carbon composite negative electrode, performing carbon coating by a porous silicon acetylene CVD (Chemical Vapor Deposition) method, and controllably preparing the gas-phase silicon-carbon negative electrode material of the porous carbon base material. The gas phase precipitation method and the alloying method are creatively combined, the prepared negative electrode material has higher specific capacity and energy density, rapid transmission of lithium ions is facilitated, the stability of an electrode structure is kept, and the negative electrode material has the advantages of being good in cycle performance, high in safety, high in energy density and the like.
Owner:ZHEJIANG WESTON NEW MATERIALS CO LTD

Fluid coking method

PCT designated stage expiredWO2025096190A1Coking carbonaceous materialsThermodynamicsCoke
A fluid coker reactor may be heated with minimal combustion of coke. As an example, a method of heating coke in a fluid coker may include: providing a fluid coker reactor; reacting heavy oil feedstock in a coking zone of the fluid coker reactor to form a vapor phase and hot coke; stripping at least a portion of hydrocarbons that adhere to the hot coke in a stripping zone located in a lower portion of the fluid coker reactor; scrubbing the vapor phase from the fluid coker reactor in a scrubber; and heating the hot coke in a heater, wherein the heater receives the hot coke from the fluid coker reactor, wherein the heater heats the hot coke without substantially combusting the hot coke, and wherein the heater produces a coke product.
Owner:EXXONMOBIL TECHNOLOGY & ENGINEERING CO

Production Process for a Porous Host Structure Containing Silicon Oxide as an Anode Active Material for a Lithium Battery

A process for producing a porous host structure or a powder mass of multiple porous particulates containing silicon oxide (SiOx) therein, comprising (a) providing a porous host structure having a volume fraction of pores from 5% to 99.9%, wherein the porous host structure is selected from a carbonaceous, graphitic, graphene, or metallic material; (b) catalytically vaporizing Si from a mixture of a catalyst and elemental Si or a Si-containing material to form a vapor phase of Si or a precursor to Si; (c) immediately directing the vapor phase into pores of the porous host structure and facilitating the vapor phase to form solid Si particles or coating deposited in the pores to form a Si-impregnated porous host structure; (d) exposing the Si to an oxidizing environment to obtain SiO2-coated Si particles / coating or SiOx; and (e) optionally breaking and reducing the SiOx-impregnated porous host structure into smaller porous particulates.
Owner:HONEYCOMB BATTERY CO

Mechanical pump-free flow boiling heat sink

A mechanical pump-free flow boiling heat sink, including an evaporator, a two-phase flow steam injector, a first condenser, a boiling pool and a second condenser. A vapor outlet of the evaporator is communicated with a vapor-phase inlet of the two-phase flow steam injector. A liquid-phase outlet of the evaporator is communicated with an inlet of the boiling pool. An outlet of the boiling pool is communicated with an inlet of the second condenser. An outlet of the second condenser is communicated with a liquid-phase inlet of the two-phase flow steam injector. An outlet of the two-phase flow steam injector is communicated with an inlet of the first condenser. An outlet of the first condenser is communicated with an inlet of the evaporator.
Owner:XI AN JIAOTONG UNIV

Method for growing (310) oriented beta-Ga2O3 single crystal thick film on sapphire substrate

The invention provides a method for growing a (310) oriented beta-Ga2O3 single crystal thick film on a sapphire substrate. The method comprises the following steps: cleaning the sapphire substrate and then carrying out annealing treatment; and with hydrogen chloride gas, gallium metal and oxygen as reaction sources, epitaxially growing a (310) oriented beta-Ga2O3 single crystal thick film on the treated sapphire substrate by using a hydride vapor phase epitaxy method. According to the method for growing the (310) oriented beta-Ga2O3 single crystal thick film on the sapphire substrate, the process is simple, operation is easy, controllability is high, the obtained (310) oriented beta-Ga2O3 single crystal thick film is smooth in surface, compact and uniform in thickness, the crystallinity of the single crystal film layer is high, and the growth requirement of a single crystal epitaxial film layer of tens of micrometers can be met; in addition, the method provided by the invention can realize large-batch and large-scale production of the (310) oriented beta-Ga2O3 single crystal thick film, and meets the device preparation requirements.
Owner:BEIJING MING GALLIUM SEMICON CO LTD

Slurry reactor system for upgrading feedstock

A slurry reactor system including a slurry reactor configured to convert, under slurry hydroconversion conditions, a slurry reactor content flowing upwards and containing a feedstock including one or more of fats, oils and greases, a slurry hydroconversion catalyst and a hydrogen stream to a slurry hydroconversion effluent containing a slurry phase effluent including catalyst particles and a liquid product and a vapor phase effluent including a hydroconversion product, and one or more separation units in fluid communication with the slurry reactor to receive the slurry hydroconversion effluent. A given one of the one or more separation units is configured to separate the slurry phase effluent from the vapor phase effluent.
Owner:CHEVRON USA INC

Lithium carbon nanotube doped porous carbon, preparation method and application thereof

The invention provides lithium carbon nanotube doped porous carbon as well as a preparation method and application thereof, and belongs to the technical field of battery material preparation. The preparation method of the lithium carbon nanotube doped porous carbon comprises the following steps: firstly, uniformly doping carbon nanotubes in a resin precursor, then curing and activating to prepare the carbon nanotube doped porous carbon, and constructing an efficient conductive network in pores and a matrix of the porous carbon by the carbon nanotubes, so that the electronic conductivity of the material can be improved, and the performance of the material is improved. The material can serve as a framework to provide structural support to enhance the mechanical property and thermal stability of the material, and optimization of the pore structure is facilitated. Then metal lithium steam is deposited in pores of the porous carbon through a vapor phase method, so that the defects of the porous carbon can be further reduced, defect sites of the porous carbon can be further filled, the structural stability of the material is enhanced, the ionic conductivity of the material is improved, and the first coulombic efficiency is improved.
Owner:GUOKE TANMEI NEW MATERIALS (HUZHOU) CO LTD