12results about How to "Reduce aspect ratio" patented technology

The present application relates to the technical field of net rack structure reinforcement, and particularly relates to a welding-free full-assembled net rack rod piece reinforcement device and method. The device comprises: a fixed center bearing frame for reinforcing a circular tube component; a telescopic vertical sliding inclined strut assembly arranged between two adjacent vertical fixed vertical rods; an assembled sectional sleeve assembly for fixing the fixed center bearing frame outside the circular tube component; a cable body for connecting two connecting bases on the fixed center bearing frame; and a tensioning adjusting mechanism for adjusting the tension of the cable body. The welding-free full-assembled net rack rod piece reinforcement device and method provided by the present application adopts a welding-free full-assembled construction process, and the components are standardized prefabricated in a factory. The components are only assembled by bolts and pins at the site, so that the construction is safe and efficient, welding damage is avoided, and the original structure performance is not affected. The components are connected by bolts, so that the components are convenient to disassemble and assemble, the components can be recycled and reused, and the engineering cost is reduced.

This invention provides a semiconductor structure and a method for fabricating the semiconductor structure. The semiconductor structure includes an array region and a logic region located adjacent to each other on one side of a substrate. The array region includes a first array connection portion and a semiconductor device sequentially connected along a first direction. The semiconductor device has a first surface in contact with the first array connection portion. The logic region has a first logic connection portion and a second logic connection portion sequentially connected along the first direction. The second logic connection portion has a second surface in contact with the first logic connection portion. The cross-sectional dimension of the first logic connection portion in the second direction is smaller than the cross-sectional dimension of the second logic connection portion in the second direction, and the second direction is perpendicular to the first direction. In the first direction, the first surface has a first perpendicular distance from the substrate, and the second surface has a second perpendicular distance from the substrate. The first perpendicular distance is greater than or equal to the second perpendicular distance.

The utility model discloses a kind of reinforcing structures between steel structure factory building beam column steel frame, including the inclined brace component being arranged between existing steel column and existing steel frame beam, inclined brace component includes inclined brace rod, and column connecting plate and beam connecting plate being arranged at both ends, column connecting plate connects the existing steel column, and beam connecting plate connects the existing steel frame beam;Existing steel column is provided with column reinforcing plate in the region of connecting the column connecting plate, and existing steel frame beam is provided with beam reinforcing plate in the region of connecting the beam connecting plate;Adjacent the existing steel column between being arranged at factory building side wall is further provided with detachable intercolumnar rigid tie rod, and the setting height of the intercolumnar rigid tie rod is not lower than the height of column connecting plate at the position. Through the above setting, the safety and stability of the roof truss beam can be better ensured, the roof permanent load can be increased, the overall structure is simple, and the original structure does not need to be disassembled or adjusted, so the installation and construction are easy.

The present disclosure provides a semiconductor structure and a method for manufacturing the same. The method includes: providing a silicon substrate having a gate structure disposed thereon and including source / drain doped regions; forming a dielectric stack covering the source / drain doped regions on the silicon substrate, the dielectric stack including a first nitride layer, an oxide layer and a second nitride layer stacked in sequence; etching the dielectric stack to form an initial contact hole exposing the source / drain doped regions, the initial contact hole having a lateral dimension in the first nitride layer and the oxide layer smaller than a lateral dimension in the second nitride layer; etching the oxide layer and the first nitride layer to form a contact hole having a lateral dimension in the first nitride layer and the oxide layer larger than a lateral dimension in the second nitride layer; forming a metal silicide layer at a bottom of the contact hole; forming a nitride liner layer at sidewalls of the contact hole; and forming a contact plug in the contact hole and connected to the metal silicide layer. The present disclosure is easy to form the metal silicide layer and prevents metal diffusion of the contact plug.

The utility model provides a structure for improving the section grade of a composite beam. The structure comprises a steel beam, reinforcing angle steel and a concrete floor. The concrete floor slab and the steel beam are connected through a connecting piece; the steel beam is provided with a neutralizing shaft, the part above the neutralizing shaft forms a compression area, the compression area comprises a T-shaped compression area of the steel beam and a concrete floor, reinforcing angle steel is installed on the outer side of the steel beam and located in the T-shaped compression area of the steel beam, and two limb plates of the reinforcing angle steel are tightly attached to a web and an upper flange of the steel beam respectively. The reinforcing angle steel is symmetrically arranged on two sides of a web of the steel beam. The reinforcing angle steel is arranged in the compression area of the web of the steel beam, so that the width-to-thickness ratio of the web in the compression area is reduced, the web of the composite beam meets the S1 section grade, and meanwhile, the bending resistance and the shearing resistance of the composite beam are improved. The combined beam is simple in structure and beneficial to popularization of the combined beam in a steel structure reinforcing project.

The application provides an etching method, and provides an etching structure, which comprises an insulating layer, a metal layer and a patterned photoresist layer arranged on the insulating layer in sequence; the photoresist layer is used as a mask, and the metal layer is etched by using an inert gas ion beam at a first etching angle to obtain an etching groove; a metal deposition layer is formed on the sidewall surface of the photoresist layer during the etching process; the photoresist layer and the metal deposition layer are etched by using a mixed gas ion beam at a second etching angle to remove the metal deposition layer; the mixed gas comprises inert gas and reactive gas, the reactive gas can react with the photoresist layer and can consume the photoresist layer, so that the aspect ratio of the etching groove is reduced, the etching of the metal deposition layer by the mixed gas ion beam is facilitated, the mixed gas is incident into the etching groove at the second etching angle, the second etching angle is greater than the first etching angle, the metal deposition layer can be completely removed, the damage to the insulating layer is reduced, and the yield of the metal electrode is improved.

The invention relates to the field of ceramic materials, in particular to an aluminum oxide-based ceramic material and a preparation method thereof.The preparation method comprises the steps that sulfonic polyferrocene modified carbon nanotubes, magnesium oxide and aluminum oxide are mixed and subjected to ball milling to obtain slurry, the slurry is dried, and then the slurry is subjected to granulation, blank pressing and sintering to obtain the aluminum oxide-based ceramic material. The method has wide application prospects in the fields of machinery, electronics, chemical engineering, biomedicine and the like.

This utility model patent belongs to the field of equipment technology in the steel industry, and is an inlet guide device for a steel straightening machine invented to achieve stable entry of steel sections into the straightening machine. The main components include a base, a screw jack, a fixed seat, a vertical roller assembly, side guide plates, and a guide plate. The screw jack is mounted on the base via the fixed seat and connected to the vertical roller assembly. The side guide plate adopts a thickened stepped recessed design and is fixed to the roller base via positioning pins and sleeve seats. The vertical roller assembly is fixed to the base via the guide plate. This reduces the installation height of the load-bearing components, the vertical roller assembly and the side guide plate, down to the base, thus reducing the height-to-width ratio of the entire guide device and decreasing the overturning moment when the steel section impacts the guide device, thereby preventing impact damage. The vertical roller assembly can be adjusted in position under the action of the screw jack, making it suitable for straightening and introducing steel sections of different specifications. Under the locking of the screw jack, a stable structure is formed, enabling the initial straightening of bent steel sections.

This invention discloses a design method for an ultra-thin 3D inductor passive device, comprising the following steps: S1, selecting a suitable substrate; S2, setting a bottom metal on the bottom of the substrate, metallizing a hole on the bottom metal, and extending the metallized hole through the substrate and above the upper surface of the substrate; S3, setting a trace metal on the metallized hole, and fixing the trace metal to the upper surface of the substrate; S4, setting bumps on the trace metal, and setting a top metal on the top of the bumps, forming a passive device with 3D inductance. This invention reduces the aspect ratio of the 3D inductor while ensuring inductance performance, lowers the processing difficulty, and reduces the thickness of the manufactured product and the overall thickness of the packaging module.

The utility model discloses a kind of inner concave connecting joint applied to umbrella structure, including the connecting joint of the special-shaped steel column upper end being set to the lower part of umbrella structure, the connecting joint includes inner support part and outer support part, inner support part is connected with the round steel column of special-shaped steel column, outer support part is annular dentiform structure and is evenly distributed in the circumferential direction of inner support part, outer support part lower end is connected with the box room column of round steel column outer side, upper end is connected with the main beam of umbrella structure, outer support part is located at the outer side of inner support part and jointly constitutes funnel shape, the bottom surface and top surface of outer support part are inclined upward conical part, outer support part lower end vertical part, vertical part is connected between the conical part of outer support part by smooth arc part.The utility model can improve the bending resistance and support stability of connecting joint.

The invention relates to the semiconductor technology, in particular to a forming method of a chip packaging structure and the chip packaging structure.The forming method of the chip packaging structure comprises the steps that firstly, masks are arranged on the upper surfaces of a plurality of chips bonded to a substrate wafer, and the masks expose gaps of the chips and the parts, close to the gaps, of the upper surfaces of the chips; etching is carried out on the exposed part, and the gap is processed into a structure with a wide upper part and a narrow lower part through etching. According to the structure, the effective depth-to-width ratio of the gap is reduced, when the gap with the wide upper part and the narrow lower part is filled with the dielectric layer, tensile stress can be prevented from being generated, meanwhile, Si rack is prevented from being generated on the side wall of the Die due to the tensile stress, and pores are also prevented from being generated on the dielectric layer in the gap groove. As a whole, the forming method of the chip packaging structure can improve the stability of the D2W structure.

The invention relates to the technical field of semiconductors, and discloses a semiconductor structure and a preparation method thereof, and the method comprises the steps: providing a substrate with a gate structure layer, and the gate structure layer comprises a plurality of gates which are arranged at intervals; forming a sacrificial layer between the gates on one side, deviating from the substrate, of the gate structure layer; forming a first oxide layer covering the sacrificial layer and the gate structure layer on one side, away from the substrate, of the sacrificial layer; etching the first oxide layer to expose the upper surface of the sacrificial layer; and removing the sacrificial layer and the first oxide layer and the gate structure layer located in the self-aligned source-drain contact region to form a self-aligned metal layer. According to the technical scheme, through preparation and removal of the sacrificial layer, the depth-to-width ratio of dry etching is reduced, the reaction space of wet etching is improved, the oxide layer between the grids can be fully etched, it is ensured that the oxide layer on the surface of the substrate can be completely removed, the quality of the self-aligned metal layer is improved, and the yield of the self-aligned metal layer is improved. And the contact resistance of the self-aligned metal layer is reduced.