5results about How to "Easy to etch" patented technology

The invention relates to a preparation method and application of an oxidation-resistant MXene material with a defect ordered hexagonal hole structure, and the preparation method comprises the following steps: mixing MAX phase Ti3AlC2 with hexagonal holes, CuCl2 and NaCl, loading into an alumina corundum square, covering with a NaCl salt bed boat, putting into a muffle furnace, and carrying out constant-temperature sintering at 820 DEG C in an air atmosphere for 3 hours; the method has the advantages that the process is simple and reasonable, a barrier for resisting attacks of oxygen molecules and water molecules is effectively constructed under the combined action of trace metal oxides on the surface of the MXene material, and the oxidation resistance of the MXene material is remarkably improved.

The invention discloses a trench isolation structure, a preparation method thereof and a semiconductor device, and the preparation method comprises the steps: providing a semiconductor substrate which comprises a trench; at least the interior of the groove is filled with a sacrificial layer, and the filled sacrificial layer exposes a part of height of the side wall of the groove in the depth direction from the port of the groove to the interior of the groove. A first oxidation film layer is at least formed on the side wall of the groove and above the sacrificial layer in the groove, a first part of the first oxidation film layer is formed on the side wall of the groove, and a gap is formed in the first part; the second portion is formed at the bottom of the gap and on the sacrificial layer. Forming a window on the second part, wherein the window exposes part of the sacrificial layer; and removing the sacrificial layer in the groove based on the window. And filling the gap in the first part with a second oxide film layer until the gap is completely filled with the second oxide film layer. Therefore, the preparation process of the trench isolation structure can be simplified, the preparation difficulty and cost can be reduced, and the performance of the semiconductor device can be improved.

The invention discloses a preparation method of an HJT photovoltaic cell electro-coppering electrode seed layer, which adopts a CuNi target as a sputtering target material, introduces metallic nickel and controls the proportion of nickel, creatively adopts a novel CuNi seed layer film as a heterojunction cell electro-coppering seed layer, the CuNi seed layer film has good conductivity, and can be used for preparing an electro-coppering electrode seed layer. The CuNi seed layer film and the TCO film have good bonding strength, are easy to etch, do not have a corrosion expansion phenomenon, are matched with the etching rate of a copper film, have good acid resistance, have good matching degree with a copper electroplating solution, have good contact characteristics with the TCO film on the bottom layer in the electroplating solution, and are low in contact resistance; and the photoelectric conversion efficiency of the heterojunction solar cell can be effectively improved.

The present invention provides an environmentally friendly and efficient method for etching diamond particles, and relates to the field of diamond etching technology. The method for etching diamond particles is to use water as a solvent to perform a preliminary etching treatment on the diamond particles through an ozone combined with an ultrasonic process, and then perform a rapid heat treatment to fully etch. The present invention overcomes the shortcomings of the existing vapor phase diamond etching technology, significantly improves the surface etching effect of air on diamond particles, and the technology does not produce waste liquid and other pollutants, which is relatively environmentally friendly. The preparation process is fast and efficient, and the etching can be effectively regulated by adjusting parameters such as ozone treatment and temperature, significantly improving the etching effect and efficiency.

This invention provides a P-type passivated contact structure and its preparation method. The P-type passivated contact structure includes a silicon substrate, a first silicon oxide layer, a first polycrystalline silicon layer, a second polycrystalline silicon layer, and a hydrogen-containing dielectric layer. The silicon substrate has a diffusion region near the surface of the first silicon oxide layer. The surface of the first silicon oxide layer near the first polycrystalline silicon layer has a native pinhole defect structure generated by plasma bombardment. The first polycrystalline silicon layer is made of carbon-doped boron-containing polycrystalline silicon, wherein the boron and carbon doping concentrations gradually increase away from the first silicon oxide layer, and the thickness is greater than or equal to 8 nm. The second polycrystalline silicon layer is also made of carbon-doped boron-containing polycrystalline silicon, with a thickness greater than 10 nm. The interfacial silicon oxide surface of this invention has a high density of pinhole defects, and using carbon-doped boron-containing amorphous silicon as the source layer can reduce oxide layer defects caused by interfacial boron enrichment, achieving excellent surface passivation and selective carrier collection, and reducing surface recombination current density.