1545 results about "Surface roughening" patented technology

Projections 22 of the blade 16 provided on a blade surface in a wafer-loading region 18b of a body 18 support a wafer W loaded on the blade surface 18a. Since the projections 22 have microgrooves formed by surface roughening the wafer W is retained on the projections 22 with a suppressed displacement. The blade 16 has a simple structure that retains the wafer W without vacuum suction and has no receiving hole to retain the wafer W in the body 18 of the blade 16. This can effectively prevent formation of defects on the wafer W.

The invention forms an epitaxial silicon-containing layer on a silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface and avoids creating a rough surface upon which the epitaxial silicon-containing layer is grown. In order to avoid creating the rough surface, the invention first performs a hydrofluoric acid etching process on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. This etching process removes most of oxide from the surface, and leaves only a sub-monolayer of oxygen (typically 1×10¹³-1×10¹⁵/cm² of oxygen) at the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. The invention then performs a hydrogen pre-bake process in a chlorine containing environment which heats the silicon germanium, strained silicon, or thin silicon-on-insulator surface sufficiently to remove the remaining oxygen from the surface. By introducing a small amount of chlorine containing gases, the heating processes avoid changing the roughness of the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. Then the process of epitaxially growing the epitaxial silicon-containing layer on the silicon germanium, patterned strained silicon, or patterned silicon-on-insulator surface is performed.

An aspect of the present invention relates to a magnetic tape comprising, on one surface of a nonmagnetic support, a nonmagnetic layer containing a nonmagnetic powder and a binder, and thereon, a magnetic layer containing a ferromagnetic powder and a binder, wherein

• • the magnetic layer contains a nonmagnetic filler the average particle diameter φ of which satisfies relation (I) below with a thickness t of the magnetic layer:

1.0≦φ/t≦2.0  (I);

• • the thickness t of the magnetic layer ranges from 30 to 200 nm;
  • the nonmagnetic layer has a thickness ranging from 30 to 200 nm;
  • a composite elastic modulus as measured on a surface of the magnetic layer ranges from 6.0 to 8.0 GPa; and
  • a centerline average surface roughness Ra of the surface of the magnetic layer, as measured by an optical three-dimensional profilometer, ranges from 0.2 to 1.5 nm.

A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a metal surface such as aluminum or aluminum alloy, stainless steel, or refractory metal coated with a phosphorus nickel plating and an outer ceramic coating such as alumina, silicon carbide, silicon nitride, boron carbide or aluminum nitride. The phosphorus nickel plating can be deposited by electroless plating and the ceramic coating can be deposited by thermal spraying. To promote adhesion of the ceramic coating, the phosphorus nickel plating can be subjected to a surface roughening treatment prior to depositing the ceramic coating.

A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

The magnetic tape includes a non-magnetic support; and a magnetic layer including ferromagnetic powder and a binder on the non-magnetic support, in which the total thickness of the magnetic tape is equal to or smaller than 5.30 μm, the magnetic layer includes a timing-based servo pattern, a center line average surface roughness Ra measured regarding a surface of the magnetic layer is equal to or smaller than 1.8 nm, the ferromagnetic powder is ferromagnetic hexagonal ferrite powder, the magnetic layer includes an abrasive, and a tilt cos θ of the ferromagnetic hexagonal ferrite powder with respect to a surface of the magnetic layer acquired by cross section observation performed by using a scanning transmission electron microscope is 0.85 to 1.00.

This invention relates to a two layers or more anti-static film coating deposited on a substrate. Selected layers of the films may have anti-static and/or electromagnetic properties. In one embodiment, the film farthest from the substrate has an index of refraction lower than the underlying film. In another embodiment, the surface of the film is roughened to provide a graded index of refraction.

Disclosed is an electrophotographic photoconductor including at least a photoconductive layer on a conductive substrate, wherein the surface layer of the photoconductive layer contains at least a surface crosslinked layer formed by curing a tri- or more-functional radical polymerizable monomer without having a charge transporting structure and a mono-functional radical polymerizable compound having a charge transporting structure and the surface crosslinked layer has a surface roughness Rz of 1.3 mum or less.

The invention forms an epitaxial silicon-containing layer on a silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface and avoids creating a rough surface upon which the epitaxial silicon-containing layer is grown. In order to avoid creating the rough surface, the invention first performs a hydrofluoric acid etching process on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. This etching process removes most of oxide from the surface, and leaves a first amount of oxygen (typically 1×10¹³-1×10¹⁵/cm² of oxygen) on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. The invention then performs a hydrogen pre-bake process which heats the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface sufficiently to remove additional oxygen from the surface and leave a second amount of oxygen, less than the first amount, on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. The heating process leaves an amount of at least 5×10¹²/cm² of oxygen (typically, between approximately 1×10¹³/cm² and approximately 5×10¹³/cm² of oxygen) on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. By leaving a small amount of oxygen on the silicon germanium, patterned strained silicon, or patterned silicon-on-insulator surface, the heating processes avoid changing the roughness of the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. Then the process of epitaxially growing the epitaxial silicon-containing layer on the silicon germanium, patterned strained silicon, or patterned silicon-on-insulator surface is performed.

The embodiments of the present invention generally relates to methods for enhancing the light extraction by surface roughening of the bottom n-GaN layer and/or top p-GaN layer so that the internal light from the active region is scattered outwardly to result in a higher external quantum efficiency. In one embodiment, a surface roughening process is performed on the n-GaN layer to form etching pits in a top surface of the n-GaN layer. Once the etching pits are formed, growth of the n-GaN material may be resumed on the roughened n-GaN layer to partially fill the etching pits, thereby forming air voids at the interface of the n-GaN layer and the subsequent, re-growth n-GaN layer. These air voids provide one or more localized regions with indices of reflection different from that of the n-GaN layer, such that the internal light generated by the active layers (e.g., the InGaN MQW layer), when passing through the n-GaN layer, is scattered by voids or bubbles. The surface roughening process may be further performed on a top surface of a p-GaN layer to scatter the light emitted from the active layers outwardly rather than being reflected back to the active layers.

The invention relates to a hydrolysis-resistant double-component polyurethane adhesive for structure adhesion. The hydrolysis-resistant double-component polyurethane adhesive for structure adhesion consists of a component A and a component B, wherein the component A comprises the following components in part by weight: 30 to 70 parts of polyisocyanate resin, 5 to 20 parts of plasticizing agent, 0.25 to 5 parts of thixotropic agent, 10 to 50 parts of incremental filler and 0.25 to 1 part of water-removing agent; and the component B comprises the following components in part by weight: 5 to 30 parts of polyester polyol, 5 to 30 parts of vegetable oil polyol, 5 to 30 parts of polyether polyol, 3 to 15 parts of water-absorbing filler, 1 to 10 parts of thixotropic agent, 3 to 15 parts of incremental filler, 0.1 to 10 parts of pigment, 0.1 to 5 parts of adhesion force accelerator, 0.1 to 2 parts of chain extender and 0.01 to 0.2 part of catalyst. An adhesion system improves adhesion property, solves the problem that a thermosetting composite material is subjected to surface roughening treatment before adhesion and improves the using efficiency. Aiming at the problem of poor hydrolysis resistance of a polyester type polyurethane adhesive system, the hydrolysis resistance is improved through molecule design of polyurethane soft and hard sections.

An anti-reflection film comprising: a transparent support; at least one high refractive index hard coat layer; and a low refractive index layer disposed as an outermost layer, in this order, wherein (i) the high refractive index hard coat layer has a refractive index of 1.55 or more and a thickness of 4 to 15 μm; (ii) the anti-reflection film has a surface roughness Ra (center line average roughness) of 0.10 μm or less; and (iii) the low refractive index layer comprises a hollow silica microparticle having an average particle diameter of 5 to 200 nm and a refractive index of 1.17 to 1.40.

Not only chemical durability of a glass substrate for an information recording medium is improved, but also no deformation of the substrate and no alteration of substrate characteristics are to be made. A chemical treatment layer formed on the glass substrate surface is made thicker toward a large surface roughness portion of the glass substrate, prior to being subjected to a chemical treatment, from a small surface roughness portion of the glass substrate. Layer thickness D of the resulting chemical treatment layer preferably satisfies the following inequality (1) in view of acquisition of chemical durability.

100 Ra≦D≦3000 Ra  (1)

wherein Ra is surface roughness of the glass substrate prior to being subjected to the chemical treatment.

A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises zirconia toughened ceramic material as an outermost surface of the component. The component can be made entirely of the ceramic material or the ceramic material can be provided as a coating on a substrate such as aluminum or aluminum alloy, stainless steel, or refractory metal. The zirconia toughened ceramic can be tetragonal zirconia polycrystalline (TZP) material, partially-stabilized zirconia (PSZ), or a zirconia dispersion toughened ceramic (ZTC) such as zirconia-toughened alumina (tetragonal zirconia particles dispersed in Al2O3). In the case of a ceramic zirconia toughened coating, one or more intermediate layers may be provided between the component and the ceramic coating. To promote adhesion of the ceramic coating, the component surface or the intermediate layer surface may be subjected to a surface roughening treatment prior to depositing the ceramic coating.

The invention discloses a surface roughening method of a p-GaN layer or an ITO layer in a GaN-based LED chip structure. The method comprises the following steps: (1) growing a low-temperature GaN buffer layer, an undoped GaN layer, an n-GaN layer, a multiple quantum well layer, a stack-up structure of the p-GaN layer and an extended layer evaporating ITO current on a semiconductor substrate in sequence; and (2) preparing monolayer nickel nano particles as a mask, and preparing a roughening structure on the p-GaN layer or the ITO layer. The method of the invention has simple steps, low cost, good roughening effect; by carrying out surface roughening on the p-GaN layer or the ITO layer of the GaN-based LED by the method of the invention, the total reflection of the photon in the chip can be inhibited and the light outgoing efficiency of the devices can be improved.

Process for roughening a surface of a base metal substrate includes contacting the surface with an aqueous solution comprising oxalic acid, sulfuric acid, and hydrogen peroxide at a temperature and for a period of time effective to roughen the surface to an average roughness greater than 60 Ra, removing a modest amount of base material, and generating no narrow and deep crevices at all. The surface is roughened prior to application of an electroless coating onto the substrate.