1021 results about "Cl element" patented technology

The invention forms an epitaxial silicon-containing layer on a silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface and avoids creating a rough surface upon which the epitaxial silicon-containing layer is grown. In order to avoid creating the rough surface, the invention first performs a hydrofluoric acid etching process on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. This etching process removes most of oxide from the surface, and leaves only a sub-monolayer of oxygen (typically 1×10¹³-1×10¹⁵/cm² of oxygen) at the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. The invention then performs a hydrogen pre-bake process in a chlorine containing environment which heats the silicon germanium, strained silicon, or thin silicon-on-insulator surface sufficiently to remove the remaining oxygen from the surface. By introducing a small amount of chlorine containing gases, the heating processes avoid changing the roughness of the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. Then the process of epitaxially growing the epitaxial silicon-containing layer on the silicon germanium, patterned strained silicon, or patterned silicon-on-insulator surface is performed.

A computerized method for monitoring a water utility network, the water utility network comprising a network of pipes for delivering water to consumers and a plurality of meters positioned within the pipes across the water distribution network. The method includes receiving meter data representing parameters measured by the meters, such as flow, pressure, chlorine level, pH and turbidity of the water being distributed through the pipes. The method also includes receiving secondary data from sources external to the meters and representing conditions affecting consumption of water in a region serviced by the water utility network such as weather and holidays. The meter and secondary data is analyzed using statistical techniques to identify water network events including leakage events and other events regarding quantity and quality of water flowing through the pipes and operation of the water network. The events are reported to users via a user interface.

Chlorine and sulfide species are separately introduced to a flue gas passing through a scrubber in order to remove the elemental and oxidized mercury from the gas through the precipitation of mercuric sulfide at near 100% efficiency.

A process for analyzing the nutrient status of plant matter and/or soil for one or more nutrients selected from among calcium, potassium, nitrogen, sulfur, phosphorus, magnesium, chlorine, iron, boron, manganese, zinc, copper, nickel and molybdenum is described and includes contacting said plant matter and/or soil with a laser source capable of inducing breakdown of the sample whereby an emission from said sample occurs; and, analyzing said spectral emission for determination of an amount of said one or more nutrients. A process for analyzing the heavy metal content of plant matter and/or soil, or of fertilizers or soil amendments is also described.

Disclosed is an optical fiber having a silica-based core comprising an alkali metal oxide selected from the group consisting of K₂O, Na₂O, LiO₂, Rb₂O, Cs₂O and mixtures thereof in an average concentration in said core between about 50 and 500 ppm by weight, said core further comprising chlorine and fluorine, wherein the average concentration of fluorine in said core is greater than the average concentration of alkali metal oxide in said core and the average concentration of chlorine in said core is greater than the average concentration of alkali metal oxide in said core; and a silica-based cladding surrounding and directly adjacent the core. By appropriately selecting the concentration of alkali metal oxide dopant in the core and the cladding, a low loss optical fiber may be obtained.

A semiconductor structure having silicon dioxide layers of different thicknesses is fabricated by forming a sacrificial silicon dioxide layer on the surface of a substrate; implanting nitrogen ions through the sacrificial silicon dioxide layer into first areas of the semiconductor substrate; implanting chlorine and/or bromine ions through the sacrificial silicon dioxide layer into second areas of the semiconductor substrate where silicon dioxide having the highest thickness is to be formed; removing the sacrificial silicon dioxide layer; and then growing a layer of silicon dioxide on the surface of the semiconductor substrate. The growth rate of the silicon dioxide will be faster in the areas containing the chlorine and/or bromine ions and therefore the silicon dioxide layer will be thicker in those regions as compared to the silicon dioxide layer in the regions not containing the chlorine and/or bromine ions. The growth rate of the silicon dioxide will be slower in the areas containing the nitrogen ions and therefore the silicon dioxide layer will be thinner in those regions as compared to the silicon dioxide layer in the regions not containing the nitrogen ions. Also provided are structures obtained by the above process.

A method is provided for low temperature catalyst-assisted atomic layer deposition of silicon-containing films such as SiO₂ and SiN. The method includes exposing a substrate surface containing X—H functional groups to a first R₁—X—R₂ catalyst and a gas containing silicon and chlorine to form an X/silicon/chlorine complex on the surface, and forming a silicon-X layer terminated with the X—H functional groups by exposing the X/silicon/chlorine complex on the substrate surface to a second R₁—X—R₂ catalyst and a X—H functional group precursor. The method further includes one or more integrated in-situ reactive treatments that reduce or eliminate the need for undesired high-temperature post-deposition processing. One reactive treatment includes hydrogenating unreacted X—H functional groups and removing carbon and chlorine impurities from the substrate surface. Another reactive treatment saturates the silicon-X layer with additional X—H functional groups.

A method of etching high dielectric constant materials using halogen gas and reducing gas chemistry. An embodiment of the method is accomplished using a 20 to 300 sccm of chlorine and 2 to 200 sccm of carbon monoxide, regulated to a total chamber pressure of 2-100 mTorr to etch a hafnium oxide layer.

The selectivity of response of resistive gas sensors to specific gases or vapors is improved by the selection of specified gas-sensitive materials which are not previously known for the applications described, which include detection of hydrocarbons in the presence of CO, H2S, SO2, chlorine, NO2, CO2 (especially in low concentrations), CFC's, ammonia, free oxygen by determination of partial pressures, and numerous organic gases and vapors.

A dishwasher includes a housing, a wash chamber in the housing that receives kitchenware therein, a detergent dispenser for introducing a detergent into the wash chamber, and a heater for raising temperature in the wash chamber. The dishwasher further includes a controller for selectively controlling water supply to and from the dish chamber. The controller establishes a temperature of the wash fluid circulating in the wash chamber during the first period in a range from about 115° F. (46° C.) to about 135° F. (58° C.) to enhance the wash performance of enzyme-based detergents and establishes a temperature of the wash fluid during a second period in the range from about 150° F. (65° C.) to about 160° F. (72° C.) to enhance wash performance of a chlorine-based detergent. A method of washing kitchenware contained in the dishwasher comprises (i) removing loose soil on the kitchenware in at least one pre-wash cycle, (ii) washing the kitchenware in a main wash cycle, and (iii) rinsing the kitchenware in at least one rinse cycle. The main wash cycle comprises the actions of (i) washing the kitchenware in a first temperature range for enzyme-based detergent for a first period and (ii) washing the kitchenware in a second temperature range for chlorine-based detergent for a second period.

An Anti-Terrorism water quality monitoring system for continuously monitoring a potable water treatment system and related potable water distribution network that provides potable water to a municipality, city, housing development or other potable water consumer. The system includes the collection of data from the water distribution system and from the water treatment facility and from advanced separation processes which are integrated into analytical instruments. The data collected are stored in a remote database on a remote server computer or bank of computers and accessible by Homeland Security or its designated agency. Preferred parameters of monitoring include the turbidity and disinfectant such as chlorine, hypochlorous acid, sodium hypochlorite, calcium hypochlorite, ozone, chlorine dioxide, chloramines, hydrogen peroxide, peracetic acid.

A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

A photomask blank has a light-shielding film composed of a single layer of a material containing a transition metal, silicon and nitrogen or a plurality of layers that include at least one layer made of a material containing a transition metal, silicon and nitrogen, and has one or more chrome-based material film. The high transition metal content ensures electrical conductivity, preventing charge-up in the photomask production process, and also provides sufficient chemical stability to cleaning in photomask production. The light-shielding film has a good resistance to dry etching of the chrome-based material film in the presence of chlorine and oxygen, thus ensuring a high processing accuracy.

The invention provides a probe based on a G-quadruplex-chlorine heme DNA enzyme and a method for detecting protein. The method for detecting the protein facilitates detecting operation and is low in cost and free of marking. The probe has the advantages of being high in sensitivity and low in background noise. When the protein is detected, the detecting operation is easy, consumed time is short, cost is low, and the problems that a method for detecting the protein in the prior art is long in consumed time, high in cost and complex in detecting probe manufacturing are solved.