18 results about "Boron trichloride" patented technology

The invention provides a TOPCon battery and a preparation method thereof, and boron diffusion equipment, and the preparation method of the TOPCon battery comprises the steps: providing a silicon substrate, placing the silicon substrate in a boron diffusion furnace, introducing nitrogen into a furnace mouth region of the boron diffusion furnace, introducing oxygen and boron trichloride into the boron diffusion furnace, introducing nitrogen gas into the furnace mouth region of the boron diffusion furnace, introducing nitrogen gas into the furnace mouth region of the boron diffusion furnace, introducing nitrogen gas into the furnace mouth region of the boron diffusion furnace, and introducing nitrogen gas into the furnace mouth region of the boron diffusion furnace, the ratio of the flow of the oxygen to the flow of the boron trichloride is alpha, and alpha is more than or equal to 3.5 and less than or equal to 4.5. The nitrogen can quickly purge reaction byproducts in a low-temperature area of the furnace mouth, and sufficient oxygen is provided to completely oxidize boron trichloride into a gaseous boron oxide precursor before the boron trichloride enters a high-temperature reaction area, so that the generation of viscous low-temperature boron oxide due to insufficient oxidation is avoided; and the generation and deposition of boron oxide crystals at the furnace mouth are inhibited from two dimensions of mass transfer process and chemical reaction completeness, and the yield and average photoelectric conversion efficiency of the TOPCon battery can be remarkably improved.

Provided is a plasma processing method capable of achieving flat etching process while suppressing vertical etching.The plasma processing method for plasma-etching a titanium nitride (TiN) film that forms a metal gate and contacts an insulating film on both sides includes the step of etching the titanium nitride (TiN) film by using plasmas that are generated by using a mixed gas of boron trichloride (BCl3) gas, nitrogen (N2) gas, and nitrogen trifluoride (NF3) gas and are generated by radio-frequency power modulated by a pulse, wherein the pulse has a first period with a first amplitude as its amplitude and a second period with a second amplitude as its amplitude and wherein the second amplitude is greater than 0 and less than the first amplitude.

The invention belongs to the technical field of ceramic precursors, and particularly relates to a silicon-boron-carbon-nitrogen ceramic precursor with a main chain containing alkynyl and a preparation method of the silicon-boron-carbon-nitrogen ceramic precursor. Comprising the following steps: (1) dropwise adding an n-butyllithium solution into an ether solvent, stirring, continuously dropwise adding trichloroethylene, and reacting to obtain an alkynyl dilithium salt turbid solution; (2) adding boron trichloride into the alkynyl dilithium salt turbid solution to carry out primary dechlorination polycondensation reaction, and dropwise adding dichlorosilane to carry out secondary dechlorination polycondensation reaction after the reaction is completed; (3) adding hexamethyldisilazane into the system in the step (2) to carry out an end-capping reaction, collecting supernate after the reaction is finished, and distilling at normal pressure to remove the solvent, so as to obtain a silicon-boron-carbon-nitrogen ceramic precursor crude product; and (4) dissolving the silicon-boron-carbon-nitrogen ceramic precursor crude product in an organic solvent, carrying out dialysis treatment, and carrying out atmospheric distillation on the solution in a dialysis membrane to remove the solvent so as to obtain the silicon-boron-carbon-nitrogen ceramic precursor with the main chain containing alkynyl, and the ceramic yield of the silicon-boron-carbon-nitrogen ceramic precursor in the high-temperature ceramization process can reach more than 70%.

The present disclosure relates to the technical field of chemical separation, in particular to a preparation method of electronic-grade boron trichloride and the boron trichloride obtained by the same. Before the generation of the target product boron trichloride, firstly metal chlorides are generated by allowing metal impurities to react with chlorine, and since a reaction temperature of the metals and the chlorine is usually 350°C to 450°C, which is less than temperature at which the boron trichloride is generated by allowing boron carbideto react with the chlorine, two products can be generated separately under a temperature control condition. The generated metal chlorides have been vaporized at 400°C to 450°C, and are exhausted along with unreacted chlorine. After the metal impurities are removed, reaction between the boron carbide and the chlorine is performed, to generate the target product boron trichloride. According to the present disclosure, the metal chloride impurities can be deeply removed from the boron trichloride, and a removal rate reaches 95% or above. Other impurities are effectively removed through the combination of adsorption and rectification, and purity of the obtained boron trichloride reaches 99.999%, which meets 5N standards.

The invention discloses a catalyst for synthesizing p-cumylphenol and a preparation method thereof. The catalyst comprises an active component A, a carrier B and a cocatalyst C. The active component A is one or more of aluminum trichloride, tin tetrachloride, zinc chloride, ferric chloride and boron trichloride. The carrier B is one or more of silica gel and aluminum oxide; the cocatalyst C is one or more of zinc oxide, copper oxide, magnesium oxide, zirconium dioxide, titanium dioxide and boric oxide, the selectivity of the catalyst is high, and p-cumylphenol can be efficiently prepared.

The invention belongs to the technical field of ICP (Inductively Coupled Plasma) etching, and relates to a method for etching gallium oxide by ICP, which comprises the following steps of: placing a gallium oxide sample with a PR mask on a wafer in an ICP etching chamber, introducing a first gas halide and a second gas halide into the front surface of the gallium oxide sample until the interior of the etching chamber is in a stable state, and removing the first gas halide and the second gas halide from the front surface of the gallium oxide sample; continuously introducing each gas and starting radio frequency to carry out etching treatment to obtain etched gallium oxide; the first gas halide comprises boron trichloride, and the second gas halide comprises any one or a combination of at least two of hydrogen bromide, chlorine and trifluoromethane. According to the method, pollution caused by the metal mask to gallium oxide etching can be avoided, the etching roughness can be reduced, the gallium oxide etching perpendicularity can be improved, the bottom of the etched gallium oxide achieves a fillet effect, and compared with a conventional etching method, the selection ratio of gallium oxide to PR is also obviously improved.

An apparatus includes a body configured to support a substrate, a first coating, conformal on a surface of the body, that is corrosion resistant to at least one of: boron trichloride, nitrogen trifluoride, hafnium tetrachloride, aluminum trichloride, oxygen gas, chlorine gas, fluorine gas, chlorine trifluoride, hydrogen fluoride, hydrogen gas, ammonia, tungsten hexafluoride, tetrafluoromethane, titanium tetrachloride, molybdenum pentachloride, ozone, tetrafluorosilane, or hexafluoroethane, and a second coating, on the first coating, having a hardness that greater than or equal to about 8 gigapascals.

The application discloses a SiC nanowire in-situ modified ceramic matrix composite connecting fastener and a preparation method thereof, and belongs to the technical field of ceramic matrix composite materials. The preparation method comprises the following steps: firstly, performing heat treatment on a fiber preform; then, performing CVD or CVI deposition on the fiber preform by using boron trichloride and ammonia gas / ethylene as a precursor; then, performing catalyst solution impregnation and drying; finally, performing CVI deposition on the composite preform by using trichloromethylsilane as a precursor, so that the composite preform is prepared; firstly, performing CVD or CVI deposition on the composite preform by using silicon tetrachloride and ammonia gas as a precursor; then, performing precursor solution impregnation and drying; then, performing vacuum pyrolysis treatment; finally, performing CVI deposition on the composite preform by using silicon tetrachloride and ammonia gas as a precursor, processing threads, and the connecting fastener is prepared. The application realizes rapid densification while reinforcing and toughening by means of in-situ growth of SiC nanowires, and has the advantages of short preparation period, good mechanical properties of products, high connecting efficiency and the like.

Molybdenum is etched in a highly controllable manner by performing one or more etch cycles, where each cycle involves exposing the substrate having a molybdenum layer to an oxygen-containing reactant to form molybdenum oxide followed by treatment with boron trichloride to convert molybdenum oxide to a volatile molybdenum oxychloride with subsequent treatment of the substrate with a fluorine-containing reactant to remove boron oxide that has formed in a previous reaction, from the surface of the substrate. In some embodiments the method is performed in an absence of plasma and results in a substantially isotropic etching. The method can be used in a variety of applications in semiconductor processing, such as in wordline isolation in 3D NAND fabrication.

The application provides a purification method of boron trichloride, which comprises the following steps: removing the size particles in raw material boron trichloride through a filter, removing water through a first adsorption tower, removing phosgene through a second adsorption tower, collecting the boron trichloride after pressure boosting through a crude product tank, removing light components through a first rectification tower, removing heavy components through a second rectification tower, finally detecting the boron trichloride, collecting the boron trichloride to a product storage tank when the detection is qualified, and returning the unqualified product to the first adsorption tower for further purification; and the application also provides a purification device of boron trichloride, which removes water and phosgene in crude boron trichloride through an adsorption tower containing 4A molecular sieve and MOF-74 series fillers, and then purifies the boron trichloride through a second rectification, so that the process flow is simple, and the purity of the product can reach 6N level.

The present disclosure generally relates to semiconductor processing tool cleaning, such as may be included in semiconductor processing for manufacturing an integrated circuit (IC). In an example, a cleaning process is performed on an interior surface of a chamber of a semiconductor processing tool. The cleaning process includes flowing a reactive gas into an interior volume of the chamber. The interior volume is defined at least in part by the interior surface. The reactive gas consists exclusively of boron trichloride (BCl3). After performing the cleaning process, a material layer over a semiconductor substrate is etched in the chamber.

This invention discloses a method for preparing aluminum-containing SiBCN ceramic fibers. The method involves mixing a precursor, polyaluminosilane carbosilane (PACS), and boron nitride powder to obtain a uniform, pale yellow PACS / BN hybrid precursor. This hybrid precursor is then sequentially subjected to melt spinning, air-insoluble treatment, high-temperature pyrolysis, and sintering to achieve densification, resulting in black, dense aluminum-containing SiBCN ceramic fibers. This invention differs from existing methods for preparing SiBCN ceramic fibers by avoiding the use of toxic organic monomers (such as boron trichloride, chlorosilanes, and hexamethyldisilazane) or difficult-to-synthesize polyborosilicate (PBSZ, a precursor for SiBCN ceramic fibers). It offers advantages such as safe and simple operation, economy, mild reaction conditions, and adjustable boron and nitrogen content.

The application provides a production device, a production device control method and a preparation method of a phenyl chlorosilane. The production device comprises a reactor, a catalyst circulation device and a catalyst. The reactor is used for accommodating a reaction raw material and is provided with an outlet and an inlet. The catalyst circulation device is in communication with the outlet and the inlet respectively and is used for driving at least part of the catalyst to circulate in and out of the reactor. The reaction raw material comprises a chlorosilane and a benzene compound, and the catalyst comprises boron trifluoride or boron trichloride. The application can realize the recycling of the catalyst in the production process of the phenyl chlorosilane, separate the catalyst from hydrogen generated in the reaction, improve the reaction efficiency of the catalyst, and thus reduce the production cost of the phenyl chlorosilane.

The invention relates to the technical field of electrical insulating materials and particularly discloses an epoxy resin material for a direct-current wall bushing as well as a preparation method and application of the epoxy resin material. The method comprises the following steps: mixing low-aromatic-ring low-molecular-weight epoxy resin, short-chain epoxy resin containing an ester-group main chain and an anhydride curing agent under vacuum heating, adding a boron trichloride multi-side-chain amine complex, and stirring to obtain a mixed material liquid; and pouring into a mold, and carrying out vacuum standing and stepped heating curing to obtain the required material. The problem that an existing epoxy resin material is difficult to cooperate in heat resistance and breakdown strength in a process window is solved. The prepared material is low in viscosity and wide in process window, is beneficial to full impregnation and defect reduction, has high heat resistance and high breakdown strength, and can guarantee long-term stable operation of the direct-current wall bushing.

The invention discloses a light-cured resin system for additive manufacturing of SiBCN ceramic and a preparation method thereof, and the light-cured resin system for additive manufacturing of SiBCN ceramic comprises the following raw material components: vinyl-containing polyborosilazane, mercaptan, a light absorbing agent, a free radical capturing agent and a photoinitiator. The preparation method of the vinyl-containing polyborosilazane comprises the following step: carrying out reaction on dichloromethylsilane, trichloroethylene-based silane, boron trichloride and hexamethyldisilazane, wherein the molar ratio of the raw materials is 10: (3-7): (3-7): (30-51). The light-cured resin system for additive manufacturing of the SiBCN ceramic can complete printing forming of high-precision polyborosilazane through DLP 3D printing equipment, the SiBCN ceramic prepared through pyrolysis generates equal-proportion shrinkage of about 50%, the sintered ceramic is free of warping and cracking, the original printed basic shape is maintained, and preparation of the SiBCN ceramic in a complex shape is achieved.

The invention relates to the technical field of high polymer materials, and discloses ablation-resistant metal modified polyborosilazane resin as well as a preparation method and application thereof. The method comprises the following steps: (1) in an argon or nitrogen atmosphere, dropwise adding a part of hexamethyldisilazane into a solution containing metal chloride, and carrying out a first contact reaction to obtain an intermediate compound I; (2) in an argon or nitrogen atmosphere, dropwise adding the other part of hexamethyldisilazane into a mixed solution of boron trichloride and methyl dichlorosilane, and then mixing with the intermediate compound I to carry out a second contact reaction, so as to obtain an intermediate compound II; and (3) in an argon or nitrogen atmosphere, carrying out segmented heating curing treatment on the intermediate compound II to obtain the ablation-resistant metal modified polyborosilazane resin. According to the method, refractory metal elements are introduced into a polymerization system in situ in the form of a prefabricated metal silazane precursor, the polyborosilazane resin with uniformly distributed metal is successfully prepared, the high temperature resistance and ablation resistance of the material are remarkably improved, the controllability of the reaction process is high, and the industrial application prospect is good.

The invention discloses a preparation method and application of a novel boron-nitrogen heterocyclic boron compound. The preparation method comprises the following steps: taking o-amino styrene, o-aminobiphenyl or derivatives thereof as raw materials, carrying out ring closing reaction under the action of boron trichloride to generate chlorine / bromoborane, and then further reacting the chlorine / bromoborane under the action of metal sodium, thereby generating the target boron-nitrogen heterocyclic biboron compound. The synthesis method is simple and convenient to operate, the basic structural unit of the synthesized diboron compound is the 2, 1-boron nitrogen heterocyclic ring, the unique structure endows the diboron compound with special reaction activity, a series of compounds containing the 2, 1-boron nitrogen heterocyclic ring can be further efficiently prepared from the diboron compound, and particularly, the diboron compound has broad application prospects in the field of organic functional materials. The method has great potential application value, and is expected to provide new material selection and technical support for the development of related fields.

The application belongs to the field of new energy, and discloses a synthesis method of lithium tetrafluoroborate, which comprises the following steps: step 1: adding lithium halide into a non-aqueous organic solvent, and introducing boron trichloride to obtain a solution containing lithium haloborate; and step 2: introducing hydrogen fluoride into the solution obtained in step 1 to obtain a solution containing lithium tetrafluoroborate. The method is synthesized by using a solvent method, and any available lithium halide and boron trichloride are used to react to obtain an intermediate product, and then the intermediate product is fluorinated to obtain lithium tetrafluoroborate, and various lithium halides can be selected to realize the scheme of the application, the raw materials are rich in selectivity, and the production cost is significantly reduced.