High-boron content silicon-boron-carbon-nitrogen precursor and preparation method thereof

A silicon boron carbon nitrogen and element content technology is applied in the field of high boron element content silicon boron carbon nitrogen precursor and its preparation, which can solve the problems of complex synthesis steps, low content of ceramic B element, difficult to remove by-products and the like, and achieves high temperature Good stability and oxidation resistance, increasing boron content and avoiding excessive cross-linking

Inactive Publication Date: 2019-02-22
AEROSPACE RES INST OF MATERIAL & PROCESSING TECH +1
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Problems solved by technology

According to the different mechanism of the introduction of B element, the precursor synthesis method can be divided into three types. The first method is firstly proposed by Riedel to introduce boron element into chlorosilane through the boron hydrogen addition reaction of borane and double bond, and then through The SiBCN precursor prepared by further aminolysis reaction, because borane is a trifunctional compound, the product obtained by the reaction has a high degree of crosslinking, is solid at room temperature, and has poor processability, and the prepared ceramics have low B element content and are not More than 6wt%; the second is to use the dehydrogenation coupling reaction of B-H bond and N-H bond to introduce B element into the system to synthesize the SiBCN precursor, because the borazine used contains more B-H bonds and N-H bonds, so in addition to In addition to the reaction of polysilazane, borazine will also undergo cross-linking reaction itself, resulting in excessive cross-linking of the system and poor processability. Sneddon et al. used a boracyclic ring containing only one B-H bond to react with polysilazane , the rheological properties of the prepared sample are good, but due to the low content of B elements in the synthesized sample, it fails to improve the high temperature stability and oxidation resistance of the system; the third is to use chlorosilane, boron trichloride and hexa Methyldisilazane reaction, and then through aminolysis to obtain SiBCN precursor. Since boron trichloride is a trifunctional compound, the viscosity of the precursor will be too high if the feeding ratio is too high. Otherwise, the content of B element will be low.
Moreover, the above several synthesis methods all have problems such as complex synthesis steps, high cost, and difficult removal of by-products. The prepared SiBCN ceramics have low B element content, which is not enough to improve the high-temperature stability and oxidation resistance of ceramics.

Method used

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preparation example Construction

[0041] The preparation method of the silicon-boron-carbon-nitrogen precursor with high boron element content of the present invention specifically comprises the following steps:

[0042]Step (1), add a certain amount of solvent into the Schlenk reactor filled with an inert gas atmosphere in advance, and put chlorosilane and boron trichloride containing unsaturated groups into the reactor at a certain ratio at -40 ~ 0°C , under magnetic stirring, slowly drop hexamethyldisilazane into the system, after the dropwise addition, raise the temperature to 0-40°C, preferably 0-25°C, stir and react for 4-24h.

[0043] The molar ratio of the chlorosilane, boron trichloride and hexamethyldisilazane added above is 1-5:1-5:4-10; the inert gas can be argon, helium, nitrogen or the like.

[0044] The dropping rate of the above-mentioned hexamethyldisilazane is 2-5 seconds per drop, preferably: add dropwise at a rate of 2-5 seconds per drop in the early stage of the reaction, and quickly add t...

Embodiment 1

[0054] 1) At -40~0°C, add 400ml of 1mol / L boron trichloride n-hexane solution and 52ml of methylvinyldichlorosilane into a Schlenk reactor filled with an inert gas atmosphere in advance, and mix 360ml of six Methyldisilazane is slowly added dropwise to the system at a rate of 3 seconds per drop in the early stage of the reaction. After the reaction system becomes clear and transparent, the remaining liquid can be quickly added. After the dropwise addition is completed, the temperature is raised to 25°C ; Stir and react for 12h.

[0055] 2) Fully stir the reactants obtained above, raise the temperature to 200° C. and react for 8 hours.

[0056] 3) Slowly add 54 g of 1,3-diethylborazine (DEB-H) dropwise into the reaction system of step 2) at a rate of 1 second / drop at 0°C, raise the temperature to 20°C and react for 10 h.

[0057] 4) Distill the prepared SiBCN precursor under reduced pressure at a pressure of -0.1MPa and a distillation temperature of 180°C to remove the solvent...

Embodiment 2

[0060] 1) At -40~0°C, add 400ml of 1mol / L boron trichloride n-hexane solution, 52ml of methylvinyldichlorosilane, and 42ml of methylhydrogendichlorosilane into a Schlenk reactor filled with inert gas atmosphere in advance , slowly drop 500ml of hexamethyldisilazane into the system under magnetic stirring, the rate of addition is: in the early stage of the reaction, drop at a rate of 2 seconds per drop, and the remaining liquid can be quickly added after the reaction system becomes clear and transparent, After the dropwise addition, the temperature was raised to 25°C; stirred and reacted for 8h.

[0061] 2) Fully stir the product obtained above, raise the temperature to 200° C. and react for 10 h.

[0062] 3) At 0°C, 54 g of 1,3-diethylborazine (DEB-H) was slowly added dropwise into the system at a rate of 1 second / drop, and the temperature was raised to 20°C for 10 hours of reaction.

[0063] 4) Distill the prepared SiBCN precursor under reduced pressure at a pressure of -0.1...

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Abstract

The invention relates to a high-boron content silicon-boron-carbon-nitrogen precursor and a preparation method thereof. The preparation method comprises the following steps: uniformly mixing functional, bifunctional and trifunctional chlorosilane containing unsaturated groups and hexamethyl-disilazane at a low temperature according to a certain ratio, raising the temperature and completely reacting, dropping 1,3-diethyl cycloborazane under low temperature conditions according to a certain ratio, fully reacting the reactants, and finally performing reduced pressure distillation to obtain the solvent and by-products produced by the reaction, thereby obtaining faint yellow viscous liquid or a solid product, namely the SiBCN ceramic precursor. According to the synthetic method disclosed by theinvention, a novel Polyborosilicate resin is prepared by adopting a 'double boron source', the boron content of the prepared SiBCN ceramic can reach 20%, and the problems that the boron content is low and improvement of high temperature resistance and oxidation resistance of the ceramic is not obvious can be solved. The elementary composition regulation range of the precursor disclosed by the invention is wide, and resins which are suitable to serve as a high-temperature-resistant coating, a fiber reinforcement or a ceramic-based composite material matrix and have different elementary compositions can be prepared.

Description

technical field [0001] The invention relates to a silicon-boron-carbon-nitrogen precursor with high boron content and a preparation method thereof, in particular to a method for preparing a silicon-boron-carbon-nitrogen precursor with high boron content by introducing a double boron source, which belongs to the technical field of new resin materials , Background technique [0002] With the continuous development of the advanced ceramics industry, especially the surge in demand for high-performance ceramic fibers and ceramic matrix composites in the fields of aviation, aerospace, and military industry, the technology of preparing multi-component ceramics by precursor conversion method has received more and more research at home and abroad. attention. Compared with the binary system of SiC, S 3 N 4 Ceramics and SiCN ceramics of the ternary system, SiBCN ceramics of the quaternary system prepared by the precursor conversion method have greatly improved the high temperature r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G77/62C04B35/58
CPCC04B35/58C04B2235/483C04B2235/486C08G77/62
Inventor 许艺芬胡继东冯志海孙新
Owner AEROSPACE RES INST OF MATERIAL & PROCESSING TECH
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