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Method for preparing SiNCB ceramic material

A technology of ceramic materials and silicon sources, which is applied in the field of preparation of ceramic materials, can solve the problems of easy crystallization and instability of SiNCB ceramic materials, achieve excellent oxidation resistance, ceramic production rate and high temperature stability, and yield high effect

Active Publication Date: 2015-05-06
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention aims to solve the problem that the SiNCB ceramic material prepared by the existing method is easy to devitrify and unstable at high temperature, and provides a preparation method of the SiNCB ceramic material

Method used

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  • Method for preparing SiNCB ceramic material
  • Method for preparing SiNCB ceramic material
  • Method for preparing SiNCB ceramic material

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specific Embodiment approach 1

[0013] Specific embodiment one: the preparation method of the present embodiment SiNCB ceramic material, carry out according to the following steps:

[0014] 1. Put nitrogen source, silicon source, acid-binding agent and solvent into a reactor with inert gas protection, and react for 16 hours at room temperature, wherein the molar ratio of nitrogen source and silicon source is 1-2:1, silicon source and The molar ratio of the solvent is 1:1-5, and the molar ratio of the silicon source and the acid-binding agent is 2:1;

[0015] 2. Vacuum filter the reaction product of step 1, mix the filtered liquid with 2mol / L borane tetrahydrofuran at a molar ratio of 1:1, put it into a reactor protected by an inert gas, and set it at 0°C Under the condition of reaction 12h;

[0016] 3. Then add 1 mol / L boron trichloride n-hexane solution to the reactor, the molar ratio of the product in the reactor to the boron trichloride n-hexane solution is 1:3, after reacting at 0°C for 12 hours warmin...

specific Embodiment approach 2

[0021] Embodiment 2: This embodiment is different from Embodiment 1 in that the nitrogen source in step 1 is hexamethyldisilazane or ethylenediamine. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0022] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is that the silicon source in step one is methyl vinyl silazane methyl hydrogen silazane copolymer, methyl vinyl dichlorosilane A mixture of one or two in any ratio. Others are the same as in the first or second embodiment.

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Abstract

The invention discloses a method for preparing a SiNCB ceramic material, relates to a method for preparing a ceramic material, and aims to solve the problems that a SiNCB ceramic material prepared by using a conventional method has high possibility of crystallization and instable at high temperature. The method comprises the following steps: I, putting a nitrogen source, a silicon source, an acid-binding agent and a solvent into a reactor to react at the room temperature under the protection of an inert gas; II, performing vacuum extraction filtration on the reaction product, mixing with borane tetrahydrofuran, and putting into a reactor to react; III, adding a boron trichloride n-hexane into the reactor to react, and heating to be the room temperature; IV, performing extraction filtration on the product, and performing vacuum rotary evaporation to obtain a ceramic precursor; V, putting the ceramic precursor into a tubular furnace, performing pyrolysis, and cooling to be the room temperature along the furnace to obtain the SiNCB ceramic material. The SiNCB ceramic material is excellent in oxidation resistance at 1450 DEG C and is not decomposed or crystallized when being used for a long time. The method can be applied to the field of silicon-based ceramic materials.

Description

technical field [0001] The invention relates to a preparation method of a ceramic material. Background technique [0002] Silicon-based ceramics are widely used in the fields of national defense, chemistry, aerospace and medicine due to their high thermal stability, oxidation resistance and creep resistance. Precursor polymer conversion method to prepare high-tech silicon-based ceramics, which can not crystallize, decompose, and oxidize below 1400°C, has excellent high-temperature performance, and has made a major breakthrough in ceramic technology. In recent years, some important progress has been made, such as the discovery of various functional properties associated with PDC. In addition, going deep into the molecular level is beneficial to people's research on various superior and unique properties such as high chemical stability, high temperature creep resistance or semiconductor characteristics of PDC from the perspective of exploring its structure. Studies have show...

Claims

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Application Information

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IPC IPC(8): C04B35/58C04B35/622
Inventor 杨治华张茜蔡德龙贾德昌周玉
Owner HARBIN INST OF TECH
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