4045 results about "Chlorine gas" patented technology

A stacked film patterning method is provided which is capable of reliably removing residual substances remaining after etching of a metal film, improving etching uniformity of a silicon film, and preventing an occurrence of etching residues. A micro-crystal film and a chromium film are sequentially formed on an insulating film serving as a front-end film and the chromium film is etched to be patterned by using a resist as a mask. Next, a micro-crystal silicon film on which the residual substances exist is exposed to plasma of a mixed gas including chlorine gas and oxygen gas to selectively etch the residual substances on a surface of the micro-crystal silicon film. After that, the micro-crystal silicon film is dry etched.

A cleaning process for cleaning a thermal processing apparatus includes: a heating step of heating an interior of a reaction tube at 300° C., and a cleaning step of removing deposits deposited in the thermal processing apparatus. In the cleaning step, a cleaning gas containing fluorine gas, chlorine gas and nitrogen gas is supplied into the interior of the reaction tube heated at 300° C. to remove silicon nitride so to clean an interior of the thermal processing apparatus.

In one embodiment a method for fabricating a compound nitride semiconductor device comprising positioning one or more substrates on a susceptor in a processing region of a metal organic chemical vapor deposition (MOCVD) chamber comprising a showerhead, depositing a gallium nitride layer over the substrate with a thermal chemical-vapor-deposition process within the MOCVD chamber by flowing a first gallium containing precursor and a first nitrogen containing precursor through the showerhead into the MOCVD chamber, removing the one or more substrates from the MOCVD chamber without exposing the one or more substrates to atmosphere, flowing a chlorine gas into the processing chamber to remove contaminants from the showerhead, transferring the one or more substrates into the MOCVD chamber after removing contaminants from the showerhead, and depositing an InGaN layer over the GaN layer with a thermal chemical-vapor-deposition process within the MOCVD chamber is provided.

The present invention relates to a process for producing high purity lithium hydroxide monohydrate, comprising following steps: concentrating a lithium containing brine; purifying the brine to remove or to reduce the concentrations of ions other than lithium; adjusting the pH of the brine to about 10.5 to 11 to further remove cations other than lithium, if necessary; neutralizing the brine with acid; purifying the brine to reduce the total concentration of calcium and magnesium to less than 150 ppb via ion exchange; electrolyzing the brine to generate a lithium hydroxide solution containing less than 150 ppb total calcium and magnesium, with chlorine and hydrogen gas as byproducts; producing hydrochloric acid via combustion of the chlorine gas with excess hydrogen and subsequent scrubbing of the resultant gas stream with purified water, if elected to do so; and concentrating and crystallizing the lithium hydroxide solution to produce lithium hydroxide monohydrate crystals.

The invention discloses a novel method for extracting and converting a substance containing vanadium into high-purity vanadium pentoxide by chlorination. The high-purity vanadium pentoxide process comprises batching, chlorination, dedusting, condensation, rectification, hydrolysis, filtering, drying and postprocessing. Raw materials comprise the substance containing vanadium and a carbon elementary substance and the weight ratio of the substance containing vanadium to the carbon elementary substance is 1: (0.05-0.25). The raw materials are evenly mixed, dried and put in a reactor and the high-purity vanadium pentoxide is obtained through successive chlorination, hydrolysis, postprocessing and the like. The novel method for producing high-purity vanadium pentoxide instead of a traditional method reduces industrial harmful waste water produced during a traditional hydrometallurgy process, and cyclic utilization of chlorine is achieved after the chlorine is processed. The whole production process is easy in process and basically free of produced wastes, and has certain economic benefit and social benefit. The purity of the vanadium pentoxide powder obtained by the method is 99.5%-99.99%.

In one embodiment of the invention, a method for finishing or treating a silicon-containing surface is provided which includes removing contaminants and/or smoothing the surface contained on the surface by a slow etch process (e.g., about <100 Å/min). The silicon-containing surface is exposed to an etching gas that contains an etchant and a silicon source. Preferably, the etchant is chlorine gas so that a relatively low temperature (e.g., <800° C.) is used during the process. In another embodiment, a method for etching a silicon-containing surface during a fast etch process (e.g., about >100 Å/min) is provided which includes removing silicon-containing material to form a recess in a source/drain (S/D) area on the substrate. In another embodiment, a method for cleaning a process chamber is provided which includes exposing the interior surfaces with a chamber clean gas that contains an etchant and a silicon source. The chamber clean process limits the etching of quartz and metal surfaces within the process chamber.

Decontamination formulations for neutralization of toxic industrial chemicals, and methods of making and using same. The formulations are effective for neutralizing malathion, hydrogen cyanide, sodium cyanide, butyl isocyanate, carbon disulfide, phosgene gas, capsaicin in commercial pepper spray, chlorine gas, anhydrous ammonia gas; and may be effective at neutralizing hydrogen sulfide, sulfur dioxide, formaldehyde, ethylene oxide, methyl bromide, boron trichloride, fluorine, tetraethyl pyrophosphate, phosphorous trichloride, arsine, and tungsten hexafluoride.

The present invention relates to a novel economical on-site electrochemical based membrane cell based process with the capability of producing high strength sodium hypochlorite and/or elemental chlorine gas in any ratio as required by the needs of a water or wastewater treatment plant. The system is compact and modular, using membrane cell based electrolyzers and utilizing novel process modifications and sensors to allow for the unattended control and safe operation of the process. The process allows the operator to produce elemental chlorine gas and sodium hypochlorite in any product ratio, such that 5% to 100% of the total chlorine produced by the process can be converted to high strength bleach. The process has the flexibility to produce stable high quality, low to high strength sodium hypochlorite solutions in concentrations ranging from about 2 to 15% trade as NaOCl.

In one embodiment of the invention, a method for finishing or treating a silicon-containing surface is provided which includes removing contaminants and/or smoothing the surface contained on the surface by a slow etch process (e.g., about <100 Å/min). The silicon-containing surface is exposed to an etching gas that contains an etchant, a silicon source and a carrier gas. Preferably, the etchant is chlorine gas so that a relatively low temperature (e.g., <800° C.) is used during etching or smoothing processes. In another embodiment of the invention, a method for etching a silicon-containing surface during a fast etch process (e.g., about >100 Å/min) is provided which includes removing silicon-containing material to form a recess in a source/drain (S/D) area on the substrate. The silicon-containing surface is exposed to an etching gas that contains an etchant, preferably chlorine, a carrier gas and an optional silicon source.

A cleaning method for a semiconductor substrate is provided. After pure water is supplied to a cleaning tank, a chlorine gas is supplied to the pure water to thereby generate chloride ions, hypochlorite ions, chlorite ions, and chlorate ions in the pure water. Then, a semiconductor substrate is immersed into the pure water containing the chloride ions, hypochlorite ions, chlorite ions, and chlorate ions. The fabrication cost of a semiconductor device and adverse effects on the earth environment can be reduced. The concentration of the dissolved chlorine gas in the pure water is preferably in the range from 0.003 to 0.3% by weight.

The invention relates to the non-ferrous metal metallurgy fused salt electrolysis field, a method mainly comprises the steps of: preparing titanium dioxide, titanium tetrachloride, titanium dichloride and fluotitanate as raw materials, electrolyzing one or a plurality of combinations of TiO2, TiC14 and the fluotitanate in an electrolysis bath, preparing metallic titanium or titanium-based master alloy through an electrolysis method or a thermal reduction-electrolysis combined method, performing the TiO2 and connecting direct current to deoxidize or adopting metal (or metallic compound) for heat reducing the TiO2 beforehand, preparing the metallic titanium which contains oxygen (O) with certain concentration, and then electrolyzing aluminium, alkali metal, alkaline earth, rare earth metal, metallic copper, metallic zinc or metallic lead to deoxidize finally in the electrolysis bath. The purpose of the method is to reduce the production cost of the metallic titanium, simplify the production procedures and lower the environmental pollution in the production process, especially the titanium dioxide taken as the raw materials, the production flow is shortened, the storage and the transportation are convenient, none chlorine gas takes part in the reaction, and green metallurgy of the metallic titanium can be realized.

The invention provides a formaldehyde scavenging agent and relates to a decoration deodorant. The formaldehyde scavenging agent consists of the following ingredients: 34 to 40 percent of plant extract liquid, 9 to 12 percent of sodium bicarbonate, 8 to 12 percent of hydrogen peroxide, 3 to 5 percent of penetrating agents and 35 to 40 percent of purified water. A preparation process of the formaldehyde scavenging agent comprises the steps that: the extract liquid, the sodium bicarbonate, the hydrogen peroxide, the penetrating agents and the purified water are put into a container to be uniformly stirred, and the formaldehyde scavenging agent is obtained. A plant and chemical combination method is adopted, formaldehyde can be fast decomposed in several minutes, high speed and long effect are realized, and the rebound and the secondary pollution are avoided. The formaldehyde scavenging agent has a good restoration effect on floor furniture scratches and can also be diluted to be sprayed onto objects or into the air for odor removal after decoration, and benzene series substances, carbon monoxide, sulfur dioxide, chlorylene, chlorine gas and microorganisms can be decomposed.

A copper film vapor phase deposition method includes the steps of exposing high-purity copper to a plasma of a gas containing chlorine gas to etch the high-purity copper, thereby generating active Cu_xCl_y, wherein x is 1 to 3, y is 1 to 3, gas, and forming a copper film by transporting the Cu_xCl_y gas onto the surface of a substrate to be processed. By using inexpensive high-purity copper and inexpensive chlorine, hydrogen chloride, or chlorine and hydrogen as source gases, a copper film containing no residual impurity such as carbon and having high film quality can be formed with high reproducibility.

There is provided a high-purity ruthenium sputtering target with a low impurity content, in particular producing extremely few particles, which is suitable for applications such as the formation of semiconductor thin films. The high-purity ruthenium sputtering target is manufactured by feeding crude ruthenium powder into a sodium hydroxide solution; blowing an ozone-containing gas while or after blowing chlorine gas into the solution to form ruthenium tetroxide; absorbing the ruthenium tetroxide in a hydrochloric acid solution or a mixed solution of hydrochloric acid and ammonium chloride, and evaporating the solution to dryness; sintering the resultant ruthenium salt in a hydrogen atmosphere to form high-purity ruthenium powder; and hot-pressing the ruthenium powder into a sputtering target.

A method of producing HCl from H₂ and Cl₂ is provided. In some embodiments, the method comprises at least one photochemical chamber placed in fluid communication with at least one source of H₂ and at least one source of Cl₂. In some embodiments, the photochemical chamber effects the formation of HCl through the use of at least one source of ultraviolet radiation contained therein. In some embodiments, the HCl product may be captured and used as a gas. In some embodiments, the HCl product may be absorbed into water to form an aqueous HCl solution.

The invention discloses a method for recycling acidic copper-etching waste solution. The method comprises the following steps of: step 1, recovering copper form the acidic copper-etching waste solution, filling the acidic copper-etching waste solution in a reaction kettle, adding reduced iron while stirring so as to replace copper ions in the etching solution and separate out spongy copper, and performing solid-liquid separation treatment so as to obtain a spongy copper product having a water content of 50% and the solution containing lots of ferrous ions after the replacement; and step 2, preparing ferric trichloride from the solution after copper extraction: adjusting the solution according to the ferrous ion content and the pH value of the ferrum-containing solution after the replacement in the step 1, and then charging chlorine and reacting the ferrous ions with the chlorine to generate ferric ions, so as to prepare an effluent treatment agent, namely, ferric trichloride. The method disclosed by the invention is short in production flow, simple in process, low in energy consumption, wide in adaptability, capable of reutilizing all the remainder effective cost of the waste solution after the copper extraction while effectively extracting copper powder in the etching waste solution, and capable of realizing zero-discharge of the acidic etching waste solution of a printer circuit board and effectively protecting environment.

The invention provides a method for preparing 5, 5'-bistetrazole-1, 1'-dioxo hydroxyl ammonium salt (TKX-50), and belongs to the technical field of organic synthesis. The method comprises the steps as follows: step one, glyoxime is prepared, and the yield is 62%; step two, a product obtained in the step one is dissolved in water and concentrated hydrochloric acid, chlorine is introduced at the temperature of 0 DEG C for a reaction for a period of time, and dichloroglyoxime is obtained; and finally, a product obtained in the step two is dissolved in a solvent, and the product and sodium azide have a reaction at the temperature of 0 DEG C for a period of time; after that, the mixture is transferred into diethy ether, and sealed for a reaction at the room temperature overnight after HCl is introduced for a period of time; and after diethyl ether and most HCl gas are volatilized, pH of an aqueous NaOH solution is regulated to be about 8, reflux cooling is performed, filtered and separated solids are dissolved in hydroxylamine hydrochloride to have a reaction for a period of time, and TKX-50 is obtained. According to the method, glyoxal is adopted as a raw material, water is adopted as a solvent for preparation of dichloroglyoxime in the step two, and only direct filtration is required in postprocessing, so that the tedious purification process is prevented, and the cost is reduced; and besides, a target product TKX-50 is synthetized through three steps of reactions, the total yield is up to 34%, the reaction condition is mild, the operation is simple and convenient, and the industrialization is easy to realize.

The invention relates to a method for producing phosgene through the reaction of chlorine and carbon monoxide, and in particular to a method that chlorine and carbon monoxide are used to perform an exothermic reaction in a tube reactor in the presence of an activated carbon catalyst and generate phosgene. In the method provided by the invention, after chlorine is mixed with excess carbon monoxidein a mixer M1, then the mixture enters a tubular reactor C1 to react under the action of the activated carbon catalyst and generate phosgene and then passes through a protection reactor C2 to ensure that chlorine reacts completely; and the heat generated by the reaction is led out by a 60 DEG C cooling water system in closed cycle, the generated gaseous phosgene is cooled through W1 condensation and W2 condensation and enters a phosgene gas-liquid separation tank B2, the un-condensed gas enters an exhaust gas absorber K1, and -5 DEG C toluene is used to absorb and recycle phosgene in tail gas.

A recycling method for waste denitration catalyst is characterized by comprising the following steps: (1) the waste denitration catalyst is smashed into powder of 100 to 200 meshes; (2) the powder reacts with an alkali solution under a heating and stirring condition to obtain a titanium-rich material and a solution containing elements such as vanadium, tungsten, silicon and aluminum; (3) the titanium-rich material reacts with chlorine gas to generate titanium tetrachloride, then the titanium tetrachloride is condensed and reacts with oxygen to generate titanium dioxide, and the titanium dioxide is treated with surface finish and drying to obtain a titanium dioxide finished product; (4) the pH value of the solution obtained in the step (2) is adjusted; a magnesium salt is added into the solution to remove silicate ions and obtain a solution containing vanadium and tungsten; calcium chloride powder is added into the solution containing vanadium and tungsten to generate calcium tungstate; the calcium tungstate reacts with hydrochloric acid to generate tungstic acid; the tungstic acid is treated with ammonia dissolution and evaporative crystallization to obtain ammonium paratungstate crystals; (5) a precipitant ammonium chloride is added, and centrifugal drying is carried out to obtain solid ammonium vanadate. The method has the advantages that the operation is easy; three wastes are reduced; the economic efficiency is improved; the waste denitration catalyst is recycled.