A low temperature method and
system configuration for depositing a doped
silicon layer on a
silicon substrate of a selected grade. The
silicon substrate for functioning as a
light absorber and the doped silicon layer for functioning as an emitter. The method comprises the acts of: positioning the silicon substrate in a chamber suitable for chemical
vapour deposition of the doped silicon layer on the silicon substrate, an external surface of the silicon substrate suitable for promoting crystalline film growth; using a plurality of process parameters for adjusting growth of the doped silicon layer, the plurality of process parameters including a first process parameter of a process temperature for inhibiting
diffusion of
dopant atoms into the external surface of the silicon substrate, and a second process parameter of a
hydrogen dilution level for providing
excess hydrogen atoms to affect a layer
crystallinity of the atomic structure of the doped silicon layer; exposing the external surface of the silicon substrate in the chamber to a vapour at appropriate ambient chemical
vapour deposition conditions, the vapour including silicon atoms,
dopant atoms and the
excess hydrogen atoms, the atoms for use in growing the doped silicon layer; and originating growth of the doped silicon layer on the external surface to form an interface between the doped silicon layer and the silicon substrate, such that the doped silicon layer includes first atomic structural regions having a higher quality of the layer
crystallinity next to the interface with adjacent second atomic structural regions having a lower quality of the layer
crystallinity with increasing concentrations of
crystal defects for increasing thickness of the doped silicon layer from the interface. The
resultant silicon substrate and doped layer (or thin film) can be used in
solar cell manufacturing.