39556 results about "Electrode material" patented technology

The present invention concerns electrode materials capable of redox reactions by electrons and alkaline ions exchange with an electrolyte. The applications are in the field of primary (batteries) or secondary electrochemical generators, super capacitors and light modulating system of the super capacitor type.

The present invention relates to a supercapacitor, also known as an electrical double-layer capacitor or ultracapacitor, having electrode material comprising single-wall carbon nanotubes. The carbon nanotubes can be derivatized with functional groups. The electrode material is made by preparing a polymer-nanotube suspension comprising polymer and nanotubes, forming the polymer-nanotube suspension into a polymer-nanotube composite of the desired form, carbonizing the polymer-nanotube composite to form a carbonaceous polymer-nanotube material, and activating the material. The supercapacitor includes electrode material comprising activated carbonaceous polymer-nanotube material in contact with current collectors and permeated with an electrolyte, which may be either fluid or solid. In the case of a fluid or compressible electrolyte, an electrolyte-permeable separator or spacer is interposed between the electrodes to keep the electrodes from shorting. The supercapacitor made with electrodes comprising underivatized single-wall carbon nanotubes and polymer that has been carbonized and activated appears to operate as a non-Faradaic supercapacitor.

A method of manufacturing a high performance MOS device and transistor gate stacks comprises forming a gate dielectric layer over a semiconductor substrate; forming a barrier layer over the gate dielectric layer by an ALD type process; and forming a gate electrode layer over the barrier layer. The method enables the use of hydrogen plasma, high energy hydrogen radicals and ions, other reactive radicals, reactive oxygen and oxygen containing precursors in the processing steps subsequent to the deposition of the gate dielectric layer of the device. The ALD process for forming the barrier layer is performed essentially in the absence of plasma and reactive hydrogen radials and ions. This invention makes it possible to use oxygen as a precursor in the deposition of the metal gates. The barrier film also allows the use of hydrogen plasma in the form of either direct or remote plasma in the deposition of the gate electrode. Furthermore, the barrier film prevents the electrode material from reacting with the gate dielectric material. The barrier layer is ultra thin and, at the same time, it forms a uniform cover over the entire surface of the gate dielectric.