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180results about How to "Facilitates electron transport" patented technology

Preparation method of Pt nanometer particle-modified Cu nanowire array electrode and use of Pt nanometer particle-modified Cu nanowire array electrode in enzyme-free glucose sensor

The invention relates to a preparation method of a Pt nanometer particle-modified Cu nanowire array electrode and a use of the Pt nanometer particle-modified Cu nanowire array electrode in an enzyme-free glucose sensor. The preparation method comprises spraying gold to a porous AAO template, fixing Cu foil to the surface of the electrode with a sprayed gold layer through a conductive adhesive, sealing the surrounding parts of a template through insulative silicone rubber, constructing a three-electrode system of the template as a work electrode, a saturated calomel electrode as a reference electrode and a platinum electrode as a counter electrode, putting the three-electrode system into CuSO4 and H2SO4 electrolyte, carrying out constant current electro-deposition, then carrying out immersion in a NaOH solution to remove the AAO template so that a Cu nanowire array structure is obtained, carrying out repeated cleaning through distilled water and carrying out constant potential deposition in H2PtCl6 and H2SO4 electrolyte to obtain the Pt nanometer particle-modified Cu nanowire array electrode. The Pt nanometer particle-modified Cu nanowire array electrode is used for an enzyme-free glucose sensor.
Owner:TIANJIN UNIV

High-strength flexible self-supporting electromagnetic shielding thin film and preparation method thereof

ActiveCN109348694ARealize the stripping effectHigh strengthShielding materialsFiberBrick
The invention discloses a high-strength flexible self-supporting electromagnetic shielding thin film and a preparation method thereof. Silver nanowires are loaded on nanocellulose through an adhesionaction of polydopamine to obtain high-conductivity polydopamine modified nanocellulose conductive fibers; the sheet layer of two-dimensional Ti3C2 is stripped for the first time through the effect ofan auxiliary intercalation layer of the conductive fibers, so that the intercalation rate and the interlayer spacing are improved, and a single layer or a few layers of 2-10 layers of Ti3C2MXene nanosheets can be obtained; meanwhile, one-dimensional conductive fibers and the two-dimensional nanosheets are self-assembled into a three-dimensional "brick-mud"-structured conductive network through anelectrostatic effect of positive and negative charges and a hydrogen bond effect; and finally, the flexible electromagnetic shielding thin film is synthesized in one step through a high-pressure pressing and filtering method. The flexible self-supporting thin film prepared by the method has the characteristics of being remarkable in electromagnetic wave shielding effect, high in mechanical strength, high in bending flexibility and simple in synthetic process, and can meet the specific requirements of the flexible electronics in actual application.
Owner:SHANGHAI UNIV

Silver nanowire electrode-based efficient flexible quantum dot light-emitting diode and preparation thereof

The invention discloses a silver nanowire electrode-based efficient flexible quantum dot light-emitting diode and preparation thereof. The silver nanowire transparent electrode-based flexible quantumdot light-emitting diode is characterized by comprising a flexible transparent cathode, an electron transport layer, a quantum dot light-emitting layer, a hole transport layer, a hole injection layerand a metal anode from bottom to top, wherein the flexible transparent cathode is a composite electrode formed by embedding silver nanowires into a flexible substrate. According to the silver nanowireelectrode-based efficient flexible quantum dot light-emitting diode, the smooth surface of a nano zinc oxide layer is obtained through improving the key parameters and conditions of a corresponding device preparation process and modifying the surface of the electrode by using nano zinc oxide, so that the electron transport property of the nano zinc oxide is ensured, the effect, of enhancing the light extraction efficiency of the flexible quantum dot light-emitting diode, of the silver nanowire flexible transparent electrode is brought into fully play, and the light-emitting efficiency of theflexible quantum dot light-emitting diode is effectively improved to the world leading level.
Owner:HUAZHONG UNIV OF SCI & TECH

Organic compound and electroluminescent material and applications thereof

The invention provides an organic compound and an electroluminescent material and applications thereof; the organic compound has a structure represented by a formula I, by designing a spiro parent nucleus structure and introducing a specific substituent, material stacking can be prevented, and the crystallinity of molecules can be reduced; due to the design of the spiro structure and a substituentgroup, the organic compound has a high triplet state energy level T1, and due to a nitrogen heterocyclic ring and a connecting group thereof, the organic compound has relatively good electron transport and hole transport characteristics; HOMO and LUMO energy levels are appropriate, so that energy level matching with adjacent layers is facilitated; the glass transition temperature is high, and themolecular thermal stability is good; the light-emitting efficiency and the service life of the device can be effectively improved. The organic compound can be used as an electroluminescent material for a light-emitting layer, a hole blocking layer or an electron blocking layer of an OLED device, is especially suitable for being used as a phosphorescent host material to be applied in the light-emitting layer, and can significantly improve the light-emitting performance of the device and prolong the service life of the device.
Owner:WUHAN TIANMA MICRO ELECTRONICS CO LTD

All-solid-state sensitized solar cell and preparation method thereof

The invention discloses an all-solid-state sensitized solar cell and a preparation method thereof. The all-solid-state sensitized solar cell sequentially comprises a photo anode, an interface modification layer, a hole transport layer and a counter electrode from bottom to top, wherein the photo anode sequentially comprises a conductive glass layer, a dense film layer, a porous film layer and a sensitizer layer form bottom to top, and the dense film layer and the porous film layer are both made from titanium dioxide; the sensitizer layer is made from CH3NH3PbI3; the inference modification layer is made from aluminum oxide or magnesium oxide; the hole transport layer is made from spiro-MeOTAD or PTAA; the counter electrode is an Au electrode. The preparation method comprises the steps of during a process of preparing the solar cell, enabling a thin film to be immersed in polymeric precursor solution of the aluminum oxide after the sensitizer layer is prepared and before the spin-coating of a hole transport material is carried out, and obtaining an aluminum oxide interface modification material after natural drying, wherein the charge recombination can be prevented by the interface modification material, and the electron injection efficiency can be increased. According to the all-solid-state sensitized solar cell and the preparation method, disclosed by the invention, the cost is low, the photoelectric conversion efficiency of an all-solid-state dye-sensitized solar cell can be obviously increased, and a great significance is obtained for practical application of the all-solid-state dye-sensitized solar cell.
Owner:TSINGHUA UNIV

Non-stoichiometric bismuth telluride-based thermoelectric material and preparation method thereof

The invention belongs to the technical field of energy materials, and particularly relates to a non-stoichiometric bismuth telluride-based thermoelectric material and a preparation method thereof. Thematerial disclosed by the invention has a chemical composition shown as the following general formula: BixSb2xTe3+y, and the preparation method comprises the following steps: firstly, weighing Bi simple substance powder, Sb simple substance particles and Te simple substance powder raw materials according to the chemical composition of the general formula, carrying out ball milling treatment to obtain powder, and carrying out cyclic discharge plasma sintering treatment on the obtained powder for 1-5 times to obtain a block sample. The bismuth telluride-based thermoelectric material prepared bythe method is good in crystallinity and compact in structure, and compared with a sample prepared by a traditional mechanical alloying and sintering combined method, the bismuth telluride-based thermoelectric material is obviously increased in grain size and introduces a large number of dislocations, so that the electrical property is improved, the lattice thermal conductivity is reduced, and thethermoelectric property is excellent. Meanwhile, the preparation method is simple and convenient to operate, short in period, free of high-temperature risk and low in energy consumption, and has a wide application prospect.
Owner:TSINGHUA UNIV

Nitrogen-phosphorus doped two-dimensional carbon/silicon compound and preparation method and application thereof

The invention discloses a nitrogen-phosphorus doped two-dimensional carbon / silicon compound and a preparation method and application thereof. The preparation method comprises the following steps 1, dissolving a carbon source in deionized water, then adding a silicon source, uniformly mixing, adding NaCl, uniformly mixing, drying the mixture to obtain a solid, and grinding the solid into powder, 2,putting the powder into a tubular furnace, calcining in protective gas, etching a NaCl template by using deionized water, and drying to obtain a two-dimensional carbon / silicon compound, and 3, dissolving the two-dimensional carbon / silicon compound and a nitrogen source in deionized water, stirring, then adding a phosphorus source and stirring and calcining in protective gas to obtain the nitrogen-phosphorus doped two-dimensional carbon / silicon compound. The nitrogen-phosphorus-doped two-dimensional carbon / silicon compound is low in cost, can be produced on a large scale, not only has a relatively high specific surface area and relatively good electron transmission performance, but also can greatly buffer the volume change of silicon in a lithium de-intercalation and intercalation process,is applied to a lithium ion battery negative electrode material, and has a very good application prospect.
Owner:XIAMEN UNIV

Ferroferric oxide@titanium dioxide nanorod array electrode on titanium substrate and preparation method of ferroferric oxide@titanium dioxide nanorod array electrode

The invention relates to a ferroferric oxide@titanium dioxide nanorod array electrode on a titanium substrate and a preparation method of the ferroferric oxide@titanium dioxide nanorod array electrode. The ferroferric oxide@titanium dioxide nanorod array electrode on the titanium substrate is characterized by comprising a titanium metal substrate and a ferroferric oxide@titanium dioxide composite nanorod array growing on the titanium metal substrate; the diameter of a single composite nanorod is 85-115nm and the composite nanorods are vertically, uniformly and densely distributed on the surface of the titanium metal substrate and are in an array form; and titanium dioxide coats the outer surface of ferroferric oxide. According to a titanium dioxide protection layer of the ferroferric oxide@titanium dioxide nanorod array electrode on the titanium substrate, the cycle performance of the electrode can be greatly improved, the side reaction of water electrolysis in an electrolyte is effectively suppressed, the capacity of the electrode is improved, the electrochemical properties are greatly improved, and particularly, the cycle performance is outstanding; and the ferroferric oxide@titanium dioxide nanorod array electrode can be used as a negative electrode material for a water-based hybrid super-capacitor (or other hybrid electrochemical energy storage devices).
Owner:WUHAN UNIV OF TECH
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