The invention relates to the field of
semiconductor design and manufacturing, in particular to a three-dimensional storage device and a fabrication method thereof. The three-dimensional storage devicecomprises a
semiconductor structure and a stack structure, wherein the
semiconductor structure is provided with a
peripheral circuit, the stack structure is arranged on the
peripheral circuit and comprise a core region and a word line connection region, a channel hole is formed in the core region, a storage device film and a channel layer are formed in the channel hole, a
contact hole is formed in the word line connection region and penetrates through the word line connection region, an insulation side wall and a conductive support post are formed in the
contact hole, and the conductive support post is connected with the
peripheral circuit. By the three-dimensional storage device, the integration and the performance of the three-dimensional storage device are improved; and meanwhile,
short circuit or electric leakage of the device caused by filling of poly-
silicon in the bottom of the
contact hole can be prevented, and the
electrical stability and the yield of the three-dimensional storage device are improved.