Three-dimensional storage device and fabrication method thereof

Abstract

The invention relates to the field of semiconductor design and manufacturing, in particular to a three-dimensional storage device and a fabrication method thereof. The three-dimensional storage devicecomprises a semiconductor structure and a stack structure, wherein the semiconductor structure is provided with a peripheral circuit, the stack structure is arranged on the peripheral circuit and comprise a core region and a word line connection region, a channel hole is formed in the core region, a storage device film and a channel layer are formed in the channel hole, a contact hole is formed in the word line connection region and penetrates through the word line connection region, an insulation side wall and a conductive support post are formed in the contact hole, and the conductive support post is connected with the peripheral circuit. By the three-dimensional storage device, the integration and the performance of the three-dimensional storage device are improved; and meanwhile, short circuit or electric leakage of the device caused by filling of poly-silicon in the bottom of the contact hole can be prevented, and the electrical stability and the yield of the three-dimensional storage device are improved.

Description

technical field [0001] The invention belongs to the field of semiconductor design and manufacture, and in particular relates to a three-dimensional memory and a manufacturing method thereof. Background technique [0002] With the development of planar flash memory, the production process of semiconductors has made great progress. However, in recent years, the development of planar flash memory has encountered various challenges: physical limits, existing development technology limits, and storage electron density limits. In this context, in order to solve the difficulties encountered in planar flash memory and to pursue lower production costs per unit storage unit, a three-dimensional memory structure emerged as the times require. The three-dimensional memory structure can make each memory die in the memory device have more numbers. memory unit. [0003] In non-volatile memory, such as NAND memory, one way to increase memory density is by using vertical memory arrays, that...

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a three-dimensional memory and its manufacturing method, which is used to solve the problem that the bottom of the supporting pillars in the prior art is usually filled with conductive semiconductor material, which easily leads to leakage of the memory. , at the same time, the support column needs to occupy additional storage space, resulting in the problem that the volume of the storage becomes larger

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