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27849results about How to "Reduce area" patented technology

Combined steam and gas turbine engine with magnetic transmission

In a combined steam and gas turbine engine cycle, a combustion chamber is made durable against high pressure and enlarged in length to increase the operation pressure ratio, without exceeding the heat durability temperature of the system while increasing the fuel combustion gas mass flow four times as much as the conventional turbine system and simultaneously for greatly raising the thermal efficiency of the system and specific power of the combined steam and gas turbine engine.Water pipes and steam pipes are arranged inside the combustion chamber so that the combustion chamber can function as a heat exchanger and thereby convert most of the combustion thermal energy into super-critical steam energy for driving a steam turbine and subsequently raising the operation pressure ratio and the thermal efficiencies of the steam turbine cycle and gas turbine cycle. The combustion gas mass flow can be also increased by four times as much as the conventional turbine system (up to the theoretical air to fuel ratio) and the thermal efficiency and the specific power of the gas turbine cycle are considerably increased.Further, the thermal efficiency of the combined system is improved by installing a magnetic friction power transmission system to transmit the power of the system to outer loads.
Owner:TANIGAWA HIROYASU +1

Energy harvesting computer device in association with a communication device configured with apparatus for boosting signal reception

ActiveUS20130157729A1Improve consumer electronics hybrid consumer electronics performanceLow densityMaterial nanotechnologyEnergy efficient ICTCellular telephoneCommunication device
Disclosed embodiments comprise an energy harvesting computer device in association with a communication device comprising interactive user interface operatively configured with CMOS multiple antennas on chip for boosting signal receptions and for providing faster data transmission speed. Disclosed embodiment encompasses three modes of communications—the Cell phone, wireless Internet applications, and Global communication and media information. Embodiments provide communication apparatus operable to enhance mobile communication efficiency with touch sensitive display comprising energy harvesting platform in communication with a charging circuit board configured with memories, processors, sensors, and modules. Embodiments further provide a gaming device, a wireless media device configured with touch pads comprising sensors being embedded in silicon substrate and fused in nano-fiber/microfiber material having excellent electrical characteristics. Certain embodiments provide communication apparatus configured for voice enabled applications comprising human voice auditory operable to convert text into voice auditory and/or voice auditory into text applications.
Owner:TABE JOSEPH AKWO

Symmetrically and asymmetrically stacked transistor group RF switch

A silicon-on-insulator (SOI) RF switch adapted for improved power handling capability using a reduced number of transistors is described. In one embodiment, an RF switch includes pairs of switching and shunting stacked transistor groupings to selectively couple RF signals between a plurality of input / output nodes and a common RF node. The switching and shunting stacked transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. In one embodiment, the transistor groupings are “symmetrically” stacked in the RF switch (i.e., the transistor groupings all comprise an identical number of transistors). In another embodiment, the transistor groupings are “asymmetrically” stacked in the RF switch (i.e., at least one transistor grouping comprises a number of transistors that is unequal to the number of transistors comprising at least one other transistor grouping). The stacked configuration of the transistor groupings enable the RF switch to withstand RF signals of varying and increased power levels. The asymmetrically stacked transistor grouping RF switch facilitates area-efficient implementation of the RF switch in an integrated circuit. Maximum input and output signal power levels can be withstood using a reduced number of stacked transistors.
Owner:PSEMI CORP

Semiconductor device

A programmable semiconductor device has a switch element in an interconnection layer, wherein in at least one of the inside of a via, interconnecting a wire of a first interconnection layer and a wire of a second interconnection layer, a contact part of the via with the wire of the first interconnection layer and a contact part of the via with the wire of the second interconnection layer, there is provided a variable electrical conductivity member, such as a member of an electrolyte material. The via is used as a variable electrical conductivity type switch element or as a variable resistance device having a contact part with the wire of the first interconnection layer as a first terminal and having a contact part with the wire of the second interconnection layer as a second terminal. By varying the electrical conductivity of the switch element, the state of connection of the via with the wire of the first interconnection layer and the state of connection of the via with the wire of the second interconnection layer may be variably set to a shorted state, an open-circuited state or to an intermediate state A two-state switch element includes an ion conductor for conducting metal ions interposed between the first and second electrodes. The second electrode is formed of a material lower in reactivity than the first electrode. The electrical conductivity across the first and second electrodes is changed by the oxidation-reduction reaction of the metal ions. There are provided first and second transistors of opposite polarities, connected to the first electrode, and third and fourth transistors of opposite polarities, connected to the second electrode.
Owner:NEC CORP
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