The invention relates to an embedded
flash memory below 110nm and a preparation method thereof, the embedded
flash memory below 110nm comprises a substrate, a storage array area and a
peripheral logic area, the storage array area and the
peripheral logic area are arranged on the substrate, the storage array area comprises at least one storage unit, and the storage unit comprises a
common source electrode located in the substrate, a
common source electrode located in the substrate, and a
common source electrode located in the substrate, the
common line is positioned above the common source electrode and is connected with the common source electrode; the pair of stacked grids are located on the two sides of the
common line respectively, and each stacked grid comprises a floating grid and a
control grid vertically stacked on the floating grid; a pair of select gates located beside the non-
common line sides of the two stacked gates, respectively; the
peripheral logic region comprises at least one logic
transistor, and the logic
transistor comprises a logic grid electrode; wherein the height of the
control grid electrode in the storage unit is the same as that of the logic grid electrode of the logic
transistor. The embedded
flash memory is good and stable in performance and good in reliability, and the preparation method is simple, convenient and low in cost.