The invention relates to the technical field of
semiconductor material preparation, and provides a method for controlling the resistivity of a fifth
main group element doped
crystal bar,
crystal pulling time is distinguished in different
crystal pulling stages, the volatilization coefficient of doped elements in different time periods is adjusted, the volatilization amount of the doped elements in each time interval is calculated more accurately, and the resistivity of the doped crystal bar is controlled. Therefore, the amount of
doping elements required for controlling the resistance can be calculated more accurately, the resistance of the crystal bar can be adjusted more effectively and more accurately, the resistance difference between the head and the
tail of the single-crystal crystal bar can be better reduced, meanwhile, through timely adjustment of the control process of the grade and the ending volatilization amount, the supplementary
doping condition in the crystal pulling process is defined, and the crystal pulling efficiency is improved. And the resistance
hit rate of the crystal bar is improved, and the head and
tail resistance difference is reduced, so that the resistivity of each part of the crystal bar is accurately controlled, and the consistency of subsequent
silicon wafer product quality is ensured.