Gallium nitride (GaN) base light-emitting diode (LED) structure and method for improving photoelectric conversion efficiency thereof

An LED structure, p-electrode technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as low photoelectric conversion efficiency, and achieve the effects of improving photoelectric conversion efficiency, reducing reverse current, and reducing reverse current.
CN103094441AInactive Publication Date: 2013-05-08AQUALITE CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
AQUALITE CO LTD
Publication Date
2013-05-08
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to the field of photoelectric devices, in particular to a Gallium nitride (GaN) base light-emitting diode (LED) structure. The GaN base LED structure sequentially comprises a p electrode, a transparency electrode, a p type GaN layer, a multiple quantum well active area and an n type GaN layer from top to bottom. An n electrode, a first u type GaN layer and a substrate are etched on the n type GaN layer. A second u type GaN layer or a superlattice layer which is formed by a u type AlxGal-xN layer and low doping n type GaN in an alternate growing mode is inserted into between the multiple quantum well active area and the n type GaN layer. An x indicates the aluminous ingredient of the AlxGal-xN, and the value range of the x is that 0<=x<=1. Correspondingly, the invention further provides a method for improving the photoelectric conversion efficiency of the GaN base LED structure. Therefore, the transverse resistance difference of the GaN base LED structure is removed or reduced, so that currents can be expanded, forward voltages can be lowered, reverse currents are reduced, a luminous area is enlarged, and thus the photoelectric conversion efficiency of an LED is improved.
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Description

technical field

[0001] The invention relates to the technical field of optoelectronic devices, in particular to a GaN-based LED structure and a method for improving its photoelectric conversion efficiency. Background technique

[0002] Existing GaN-based LED structures such as figure 1 As shown, it includes the following parts from bottom to top: growing undoped u-type GaN layer on the substrate, n-type doped n-type GaN, n-electrodes etched on n-type GaN, multiple quantum wells with Source region (Multi-Quantum Wells, MQW), p-type doped p-type GaN, transparent electrode ITO and p-electrode.

[0003] In the above structure, the current distribution is severely uneven. like figure 1 As shown by the arrow, each electric field line can be regarded as a series resistor, so the cross-sectional view of the LED can be regarded as a parallel circuit of many series resistors. Under the same applied voltage, the smaller the resistance, the greater the current and the greater The sm...

Claims

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