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Gallium nitride (GaN) base light-emitting diode (LED) structure and method for improving photoelectric conversion efficiency thereof

An LED structure, p-electrode technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as low photoelectric conversion efficiency, and achieve the effects of improving photoelectric conversion efficiency, reducing reverse current, and reducing reverse current.

Inactive Publication Date: 2013-05-08
AQUALITE CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a GaN-based LED structure and a method for improving its photoelectric conversion efficiency, which is used to solve the problem of low photoelectric conversion efficiency of the existing GaN-based LED structure

Method used

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  • Gallium nitride (GaN) base light-emitting diode (LED) structure and method for improving photoelectric conversion efficiency thereof
  • Gallium nitride (GaN) base light-emitting diode (LED) structure and method for improving photoelectric conversion efficiency thereof
  • Gallium nitride (GaN) base light-emitting diode (LED) structure and method for improving photoelectric conversion efficiency thereof

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Embodiment Construction

[0026] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0027] like figure 2 As shown, this embodiment provides a GaN-based LED structure, which includes a p-electrode 1, a transparent electrode 2, a p-type GaN layer 3, a multi-quantum well active region 4, an n-type GaN layer 5, n-electrode 6, first u-type GaN layer 7 and substrate 8, and a second u-type GaN layer 9 is inserted in the multi-quantum well active region 4 and the n-type GaN layer 5.

[0028] like image 3 As shown, there is another improvement in this embodiment, that is, a superlattice layer 10 is inserted in the multi-quantum well active region 4 and the n-type GaN layer 5, and the superlattice layer 10 is made of u-Al x Ga 1-x A superlattice layer 10 formed by alternate growth of N layers and low-d...

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Abstract

The invention relates to the field of photoelectric devices, in particular to a Gallium nitride (GaN) base light-emitting diode (LED) structure. The GaN base LED structure sequentially comprises a p electrode, a transparency electrode, a p type GaN layer, a multiple quantum well active area and an n type GaN layer from top to bottom. An n electrode, a first u type GaN layer and a substrate are etched on the n type GaN layer. A second u type GaN layer or a superlattice layer which is formed by a u type AlxGal-xN layer and low doping n type GaN in an alternate growing mode is inserted into between the multiple quantum well active area and the n type GaN layer. An x indicates the aluminous ingredient of the AlxGal-xN, and the value range of the x is that 0<=x<=1. Correspondingly, the invention further provides a method for improving the photoelectric conversion efficiency of the GaN base LED structure. Therefore, the transverse resistance difference of the GaN base LED structure is removed or reduced, so that currents can be expanded, forward voltages can be lowered, reverse currents are reduced, a luminous area is enlarged, and thus the photoelectric conversion efficiency of an LED is improved.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a GaN-based LED structure and a method for improving its photoelectric conversion efficiency. Background technique [0002] Existing GaN-based LED structures such as figure 1 As shown, it includes the following parts from bottom to top: growing undoped u-type GaN layer on the substrate, n-type doped n-type GaN, n-electrodes etched on n-type GaN, multiple quantum wells with Source region (Multi-Quantum Wells, MQW), p-type doped p-type GaN, transparent electrode ITO and p-electrode. [0003] In the above structure, the current distribution is severely uneven. like figure 1 As shown by the arrow, each electric field line can be regarded as a series resistor, so the cross-sectional view of the LED can be regarded as a parallel circuit of many series resistors. Under the same applied voltage, the smaller the resistance, the greater the current and the greater The sm...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/06
Inventor 罗绍军靳彩霞董志江艾常涛李鸿建李四明
Owner AQUALITE CO LTD
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